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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

pdf of transistors npn pnp

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: operation. The input stage consists of separate npn and pnp differential-transistor pairs (Figure 1). , in the active region. Each input structure contains two npn (or pnp) transistors, two load resistors , input IN- to ground, applying a differential voltage of +5V between the internal pnp and npn pairs , or less for transistors in the MAX4240 family of ICs. VCEsat varies slightly with transistor size , RL-upper to VCC - 0.3V and the upper end of RL-lower to VEE + 0.3V. Operating the transistor pairs in Maxim Integrated Products
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MAX4041 MAX4042 MAX4162 MAX4163 MAX4242 MAX4291 ic 741 comparator APP741 ic 741 datasheet free transistor
Abstract: especially for low-power single-supply operation. The input stage consists of separate npn and pnp , structure contains two npn (or pnp) transistors, two load resistors, and a bias-current source for , follows: www.maxim-ic.com/an741 Page 3 of 5 VCM-upper=VCC-(I*RL-upper + VCEsat(npn) +VEB(npn , ground, applying a differential voltage of +5V between the internal pnp and npn pairs. Five volts , both supply rails. The npn pair typically connects to the top rail (VCC), and the pnp connects to the Maxim Integrated Products
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MAX4292 folded cascode rail to rail op amp AN741 folded cascode op amp differential pair cascode opamp 741 MAX492
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors , specification NPN/PNP general purpose transistors FEATURES · 300 mW total power dissipation · Very small 1.6 , Semiconductors Product specification NPN/PNP general purpose transistors LIMITING VALUES In accordance , Semiconductors Product specification NPN/PNP general purpose transistors CHARACTERISTICS Tamb = 25 °C , Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 handbook, halfpage Philips Semiconductors
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MAM456
Abstract: MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power , Components Industries, LLC, 2013 May, 2013 - Rev. 5 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP , (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) 100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 , . Power Derating http://onsemi.com 3 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP , ://onsemi.com 4 MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) PACKAGE DIMENSIONS ON Semiconductor
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AEC-Q101 MJB44H11G MJB44H11T4G NJVMJB44H11T4G MJB45H11G MJB45H11T4G
Abstract: Condition Associated Documents Datasheet Datasheet (Japanese) ( PDF : 333 KB) NPN:500 PNP:500 2V,0.2A -2V,-0.2A 2V,0.2A -2V,-0.2A DC Current Gain hFE (min) NPN:200 PNP:200 Collector-emitter saturation voltage VCE(sat) (V) (max) NPN:0.14 PNP:-0.2 Product Category High-Frequency Switching , TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products , Product Details Part Number: Category: TPCP8902 Transistors /Bipolar Power Transistors/High-Frequency Toshiba
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Abstract: wideband transistors, amplifier modules and MMICs. The "double-poly" diffusion process makes use of an , ://www.swr.de/frequenzen/kurzwelle.html System design of the local oscillator: LO = RF + IF = 6030 kHz + 455 , Document number: 4322 252 06384 Date of release: July 2003 3rd edition RF Manual product & , Application notes (see also appendix) Product portfolio 7.1 MMIC's 7.2 Wideband transistors 7.3 Varicap , voltage FM stereo radio RF switch for e.g. Bluetooth application Application of RF Switch BF1107/8 Philips Semiconductors
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2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram motorola power fet rf databook 2SK170BL Funkamateur BB202 BGA6589
Abstract: power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification PNP medium power transistors FEATURES · High collector current · 1.3 , DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56 , specification PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating , 06 3 Philips Semiconductors Product specification PNP medium power transistors Philips Semiconductors
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BCP52 BCP53 TRANSISTOR SMD MARKING CODE UA 2003 SMD IC smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 marking code 33 SMD ic bcp53 SMD transistor M3D087 BCP51 MAM288 SC-73
Abstract: MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as , Publication Order Number: MJE15032/D MJE15032 (NPN), MJE15033 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25 , ://onsemi.com 2 MJE15032 (NPN), MJE15033 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 , (°C) Figure 3. Power Derating http://onsemi.com 3 MJE15032 (NPN), MJE15033 (PNP) NPN - , , COLLECTOR CURRENT (AMPS) 10 Figure 4. NPN - MJE15032 VCE = 5 V DC Current Gain 10 10 Figure 5. PNP - ON Semiconductor
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MJE1503
Abstract: power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification NPN medium power transistors FEATURES · High collector current · 1.3 , DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53 , NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System , 06 3 Philips Semiconductors Product specification NPN medium power transistors Philips Semiconductors
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BCP56-16 NPN medium power transistor in a smd TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 Transistor SMD marking code NV TRANSISTOR SMD MARKING CODE X D transistor smd npn ac MAM287 BCP54-16 BCP55-16
Abstract: BD237 (NPN), BD234 (PNP), BD238 (PNP) Plastic Medium Power Bipolar Transistors Designed for use , August, 2013 â' Rev. 15 1 Publication Order Number: BD237/D BD237 (NPN), BD234 (PNP), BD238 , (NPN), BD234 (PNP), BD238 (PNP) 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25Â , , BRD8011/D. http://onsemi.com 4 BD237 (NPN), BD234 (PNP), BD238 (PNP) PACKAGE DIMENSIONS TOâ , . Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS â'¢ High DC Current Gain â ON Semiconductor
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Abstract: 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These , 60-80 VOLTS, 75 WATTS PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 MAXIMUM RATINGS (Note 1) Rating , ://onsemi.com 2 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) TA 4.0 PD, POWER DISSIPATION (WATTS) TC 80 , , tf v 10 ns DUTY CYCLE = 1.0% 51 RB D1 -4V RC SCOPE 1000 500 tr 200 t, TIME (ns) 100 50 NPN PNP TC , ://onsemi.com 3 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 ON Semiconductor
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2N6487/D
Abstract: BD237G (NPN), BD234G,BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 , 1.0 Vdc Adc Adc W Vdc Value Unit Vdc 2.0 AMPERES POWER TRANSISTORS 25 WATTS PNP COLLECTOR 2 NPN , (NPN), BD234G, BD238G (PNP) - - Vdc 10 IC, COLLECTOR CURRENT (AMP) 100 ms 1 ms 5 ms TJ = 150 , Area http://onsemi.com 2 BD237G (NPN), BD234G, BD238G (PNP) VCE , COLLECTOR-EMITTER VOLTAGE , (NPN), BD234G, BD238G (PNP) ORDERING INFORMATION Device BD234G BD237G BD238G Package TO-225 (Pb-Free ON Semiconductor
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DB237G
Abstract: BD237G (NPN), BD234G,â'‰BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use , '¢ Epoxy Meets UL 94 V0 @ 0.125 in â'¢ These Devices are Pbâ'Free and are RoHS Compliant* PNP NPN , December, 2013 â' Rev. 17 1 Publication Order Number: BD237/D BD237G (NPN), BD234G, BD238G (PNP , , COLLECTOR-EMITTER VOLTAGE (VOLTS) BD237G (NPN), BD234G, BD238G (PNP) 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A , 300 500 1000 BD237G (NPN), BD234G, BD238G (PNP) ORDERING INFORMATION Package Shipping ON Semiconductor
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Abstract: unity voltage gain with no inversion. The output PNP stage has plenty of head room, but the NPN stage , runs out of head room. A PNP drive stage can solve the headroom problem, but that arrangement inverts , adding another PNP stage, but two PNP transistors destabilize the FORCE-SENSE loop by adding too much , of limited beta in the Q2 transistor shown (2N2907). By substituting other transistors, you can , 4.096V, 80mA Precision Reference Abstract: You can boost the output-current capability of a Maxim Integrated Products
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MAX6033A MAX6033 APP4474 Sziklai 2N2907 application notes 2N2907 NPN Transistor 4474 Circuit 4474 AN4474
Abstract: MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP , : MJE15034/D MJE15034 (NPN), MJE15035 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , (ms) Figure 3. Thermal Response http://onsemi.com 2 MJE15034 (NPN), MJE15035 (PNP) 1000 TJ , ) NPN MJE15034 Figure 9. VCE(sat) PNP MJE15035 http://onsemi.com 3 MJE15034 (NPN), MJE15035 , . Typical Current Gain Bandwidth Product PNP MJE15035 http://onsemi.com 4 MJE15034 (NPN), MJE15035 ON Semiconductor
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Abstract: BD787 (NPN), BD788 (PNP) Complementary Plastic Silicon Power Transistors These devices are , TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 15 WATTS SCHEMATIC PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 3 , BD787 (NPN), BD788 (PNP) ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Characteristic , (on) hfe http://onsemi.com 2 BD787 (NPN), BD788 (PNP) 16 TC PD, POWER DISSIPATION (WATTS , (ns) 70 50 30 20 td @ VBE(off) = 5.0 V BD787 (NPN) BD788 (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR ON Semiconductor
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BD787/D
Abstract: of the PNP in Q1 is the non-inverting input to the amplifier, and the emitter of the NPN is the inverting input. The PNP is biased as an emitter follower, and the NPN is used both as an emitter follower and as the initial gain element. As the PNP and the NPN operate at roughly the same current density , of the inverting input is mirrored to the NPN collector, causing a drop across resistor R2. The drop , a 3.3V input to provide linear control of a 12V fan. Maxim makes a variety of fan speed controllers Maxim Integrated Products
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MAX6650 MAX6651 MAX6660 MAX6661 MAX6668 MAX6670 PWM 12V fan speed control PWM 12V fan speed control circuit AUTOMOTIVE FAN PWM npn power amplifier circuit PWM BUFFER AN3149
Abstract: 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G,â'‰2N6039G (NPN) Plastic Darlington Complementary , : 2N6035/D 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25 , ://onsemi.com 2 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) VCC -â'30 V RB & RC VARIED TO , 1.0 0.8 tr 0.6 0.4 td @ VBE(off) = 0 PNP NPN 0.2 0.04 0.06 0.1 0.2 0.4 0.6 , 500 1000 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ACTIVEâ'REGION ON Semiconductor
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2N6034 2N6035 2N6036
Abstract: BD787G (NPN), BD788Gâ'‰(PNP) Complementary Plastic Silicon Power Transistors These devices are , and are RoHS Compliant* MAXIMUM RATINGS Symbol Value Unit PNP NPN Collectorâ'Emitter , '225 (Pbâ'Free) 500 Units/Box Publication Order Number: BD787/D BD787G (NPN), BD788G (PNP) ELECTRICAL , Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 BD787G (NPN), BD788G (PNP) TC PD , . BD787 (NPN) BD788 (PNP) 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching ON Semiconductor
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Abstract: MJL4281A (NPN) MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A , ) VBE(sat) VBE(on) Vdc Vdc Vdc http://onsemi.com 2 MJL4281A (NPN) MJL4302A (PNP) TYPICAL , Voltage, NPN MJL4281A Figure 6. Typical Saturation Voltage, PNP MJL4302A http://onsemi.com 3 MJL4281A (NPN) MJL4302A (PNP) TYPICAL CHARACTERISTICS 1.4 VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 1.0 0.8 , . Typical Base-Emitter Voltages, NPN MJL4281A Figure 8. Typical Base-Emitter Voltages, PNP MJL4302A fT ON Semiconductor
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MJL4281A/D
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