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partmarking 6 C

Catalog Datasheet MFG & Type PDF Document Tags

BAV99a7

Abstract: BAR99 Generator 0.2µF VIN= 1V RS = 50 DUT 1k PARTMARKING DETAILS BAV99.A7 Sampling Oscilloscope C< 1.0pF RIN = 50 3 0.1µF + - 2 1 3 SOT23 2 VB ABSOLUTE MAXIMUM , Surge Current I FM(SURGE) 500 mA (dc) 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Tj:Tstg UNIT 70 Ptot Operating and Storage Temperature Range VALUE V CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Forward Voltage
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BAL99 BAR99 BAW56 BAV70 BAV99a7 sot232 SOT23-2 Diode BAV99 SOT23
Abstract: w Road, C had d erto n , O ldham , O L9 -8 N P , U nited K ingdom . Te le ph on e : (44)161 6 22 4 4 , PARTMARKING DETAILS B A V 7 4 -J A -L. -L. ^ 2 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER C , COMMON CATHODE ISSUE 2 - JANUARY 1995 PIN CONFIGURATION BAV74 PARTMARKING DETAIL B A V 7 4 -J A , D issipation at Tamtj=25°C O perating and Storage T em perature Range SYMBOL v R 'o VALUE 50 100 150 200 1000 330 -55 to +150 UNIT V mA mA mA mA mW °C 'f 'fm 'f s Ptot T j :T stg ELECTRICAL -
OCR Scan

BAV70

Abstract: BAV99 0.0059 2 1 Max F 1 Min C 2 Max PARTMARKING DETAILS BAV70 A4 3 ! , JANUARY 1995 PIN CONFIGURATION 2 1 PARTMARKING DETAIL BAV70 A4 3 ! SOT23 , Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL , VR=25V, Tj = 150°C VR = 70V VR = 70V, Tj = 150°C Diode Capacitance Cd 1.5 pF f
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NY11725 D-81673

BAV99a7

Abstract: BAR99 A _ f PARTMARKING DETAILS BAV99.A7 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER C ontinuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current , Tamtj=25°C O perating and Storage T em perature Range SYMBOL VR V rrm I f (AV) VALUE 70 70 100 200 500 330 -55 to +150 UNIT V V mA mA mA (dc) mW °C If r m If m is u r g e ) P,o, Tj-Tstg CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER Forward Voltage SYMBOL v F MIN. TYP
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OCR Scan

FMMTA43

Abstract: FMMTA42R JANUARY 1996 7 PARTMARKING DETAIL FMMTA42 3E FMMTA43 1E FMMTA42R 7E FMMTA43R 5E 160 , Temperature Range 1ms 200 Power Dissipation at Tamb=25°C 10ms 100ms 200 300 Continuous Collector Current Single Pulse Test at Tamb=25°C 1A 0.3 300 VCEO Emitter-Base Voltage , Voltage(Volts) E C Tj:Tstg -55 to +150 °C PARAMETER 1 10 V V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). D.C. 0.01 0.001 5 100 1000 VCE-Collector-Emitter Voltage
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FMMTA92 FMMTA93 FMMT-A42R

VP-1-1V

Abstract: FMMZ5244 FMMZ5232 FMMZ5257 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). Type No Nominal Zener Voltage v , FMMZ5254 FMMZ5255 FMMZ5256 FMMZ5257 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 , 14.3 16.2 17.1 18.1 20 20 22 24 vR VOLTS (B) 3 3.5 4 5 6 6.5 6.5 7 8 8.4 9.1 9.9 10 11 12 13 14 14 15 , Max. Zener Voltage temperature coefficient Vz(%/°C) to mA 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 29
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OCR Scan
FMMZ5244 FMMZ5248 VP-1-1V fmmz5242 8Y SOT23 zr 74 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238

BCW61DR

Abstract: BCW61CR VCBO = -10V, f =1MHz 6 B VEBO= -0.5V,f =1MHz 6 E C 150 800 ns ns ns ns ns , 60 50 100 µS VCBO = -10V, f =1MHz 6 B VEBO= -0.5V,f =1MHz 6 E C 150 , 25°C unless otherwise stated). -32 V ICEO=-2mA -5 V IEBO=-1µA BCW60 , Current IB -50 mA 330 mW -55 to +150 °C BCW61B CONDITIONS. COMPLEMENTARY , FEBRUARY 95 PARTMARKING DETAIL BCW61A BA BCW61B BB BCW61C BC BCW61D BD BCW61 Switching
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BCW61CR BCW61DR BCW61BR H12E BCW61AR K3024 100MH

BA 516 diode

Abstract: 1995 BA V 7 0 - PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER C ontinuous Reverse Voltage Repetative Reverse , issipation at Tamtj=25°C O perating and Storage T em perature Range SYMBOL VR V rrm I f (AV) VALUE 70 70 100 200 330 -55 to +150 UNIT V V mA mA mW °C If r m P,o, Tj-Tstg ELECTRICAL CHARACTERISTICS (at Tam[j = 25°C unless otherwise stated). PARAMETER Forward Voltage SYMBOL MIN. TYP. MAX. 715
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OCR Scan
BA 516 diode

zener 8m

Abstract: 8Y SOT23 FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). , IZT temperature Voltage VR VR ZZT @ IZT ZZT @ IZK IR @ coefficient VZ@IZT VZ(%/°C) =0.25mA , 3 +0.038 FMMZ5233 6 20 7 1600 5 3.3 3.5 +0.038 FMMZ5234 6.2 , +0.050 FMMZ5236 7.5 20 6 500 3 5.7 6 +0.058 FMMZ5232 8G FMMZ5245 , 700 0.1 VF=1.1V max. @ IF=200mA for all types SOT23 ! PARTMARKING DETAILS: ABSOLUTE
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FMMZ5239 FMMZ5240 zener 8m FMMZ5246 FMMZ5247 FMMZ5249 FMMZ5241

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 Collector Current (A) 75k B 1 -55°C +25°C +100°C +150°C 0 E C PARTMARKING DETAILS , Collector Current (A) 75k B 1 -55°C +25°C +100°C +150°C 0 E C PARTMARKING DETAILS , 2 +25°C I+/I*=1000 1m 10m 100m 1 0 10 1m ABSOLUTE MAXIMUM RATINGS , A IC 500 mA Ptot at Tamb=25°C 500 mW -55 to +150 °C Tj:Tstg SYMBOL , =0.1mA Collector Cut-Off Current ICES 1 -55°C +25°C +100°C +150°C 10m 100m 1 10 0.001 10m
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FMMT614 TRANSISTOR SOT23, Vbe 8V DSA003700
Abstract: +100°C +150°C 0 E C PARTMARKING DETAILS  614 I+/I*=1000 I+/I*=2000 I+/I*=5000 1 , ) 75k B 1 -55°C +25°C +100°C +150°C 0 E C PARTMARKING DETAILS  614 I+/I , 2 +25°C I+/I*=1000 1m 10m 100m 1 0 10 1m ABSOLUTE MAXIMUM RATINGS , A IC 500 mA Ptot 500 mW -55 to +150 °C at Tamb=25°C Tj:Tstg , Collector-Emitter Saturation Voltage DC 1s 100ms 10ms 1ms 100µs 0.1 -55°C +25°C +100°C +150°C Diodes
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ZDT619

Abstract: partmarking 6 C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 C1 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE , 100 nA VEB=4V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A , Temperature Range Tj:Tstg A -55 to +150 °C Collector-Emitter Saturation Voltage VCE(sat , =2V* 16 20 Continuous Collector Current mW/ °C mW/ °C 62.5 50 °C/ W °C/ W THERMAL
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ZDT619 partmarking 6 C PARTMARKING at sot223

DSA003712

Abstract: equivalent FZT651 CHARACTERISTICS 0.6 C 0.5 225 0.3 C 175 VCE=2V B PARTMARKING DETAIL FZT651 125 , 0.5 225 0.3 C 175 VCE=2V B PARTMARKING DETAIL FZT651 125 ABSOLUTE MAXIMUM , V Collector-Emitter Voltage VCEO 60 V VEBO 5 V ICM 6 A IC 3 A Power Dissipation at Tamb=25°C 1.2 - (Volts) 1.0 IC/IB=10 VCE=2V 0.8 V 0.8 V , Collector Current (Amps) amb =25°C tf ns IB1=IB2=IC/10 ts ns 140 Switching time DC
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FZT751 DSA003712 equivalent FZT651

BCX71JR

Abstract: BAY63 100MHz 6 B Power Dissipation at Tamb=25°C IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC , Temperature Range IC =-10mA, VCE = -5V f = 100MHz 6 B Power Dissipation at Tamb=25°C IC , SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 FEBRUARY 95 PARTMARKING , CK ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL , IC -200 mA Base Current IB -50 mA 330 mW -55 to +150 °C 30 180 80
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BCX71G BCX71H BCX71J BCX71K BCX71GR BCX71HR BCX71JR BAY63 sot23 mark ck BCX71JR-J8 J8 BCX71JR h11E

10VZ/X/

Abstract: PARTMARKING DETAILS COMPLEMENTARY TYPE - 5.5 6 â"¦ â"¦ VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* VDS , and high voltage dc-dc convertors PARTMARKING DETAILS COMPLEMENTARY TYPE - D S D G ZVN4424 , 240 V Continuous Drain Current at Tamb=25°C ID 500 mA Pulsed Drain Current IDM 1.5 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 2.5 , N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C
Diodes
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10VZ/X/ ZVP4424G

FMMD2835

Abstract: A9 SOT23 0.0059 2 0.055 PARTMARKING DETAIL A9 0.120 B 1 Max C 2 Min A 1 , Forward Surge Current Package Details I FRM 200 mA 330 mW -55 to +150 °C Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Forward Voltage MIN. MAX , IR 100 nA VR=50V Recovery Time* trr 6 ns IF= IR=10mA, IR(REC) =1.0mA
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FMMD2835 A9 SOT23 diode A9 sot23 diode A9 DSA003689 OL98NP D81827
Abstract: a function of temperature 3 - 105 6 IC=1mA Tamb= -55 to +150°C 160 180 - (V , conditions 100 - (V) 175°C h 20 -55°C 1mA V 25°C 100mA 180 I* =200mA 1n , capacitance 100 V VEBO 6 V IC 500 mA ICM 60 A Ptot 330 mW Tj:Tstg , 165 I* =200mA IE=10µA ICBO 0.1 10 µA µA VCB=180V VCB=180V, Tamb=100°C , Collector-Base Capacitance Ccb 140 C = 620pF V 160 - (V) 170 V Collector Cut-Off Current Zetex Semiconductors
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FMMT415 FMMT417

NPN Transistor VCEO 1000V

Abstract: FZT696B IC/IB=100 0.6 0.4 IC/IB=50 0.6 0.4 C E C B ABSOLUTE MAXIMUM RATINGS. V V -55°C +25°C +100°C +175°C 0.8 IC/IB=10 - (Volts) - (Volts) Tamb=25°C IC/IB , PARTMARKING DETAIL FZT696B PARAMETER 0 0.1 1 0.01 10 0.1 1 10 I+ - Collector , Emitter-Base Voltage 0.2 SYMBOL Collector-Base Voltage 0.2 ICM 1 A 0.5 +100°C +25°C -55°C 1.4 VCE=5V 1.4 IC/IB=50 0.8 0.6 - (Volts) 1K - Typical Gain 1.0 V
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NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor

FZT968

Abstract: DSA003719 -20 A IC -6 A Ptot 3 W Operating and Storage Temperature Range -55 °C +25 , RATINGS. 0 1m E +100 °C +25 °C -55 °C 0.2 0 C PARTMARKING DETAIL FZT968 0.4 , MAXIMUM RATINGS. 0 1m E +100 °C +25 °C -55 °C 0.2 0 C PARTMARKING DETAIL FZT968 , OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A * 6 Amps continuous , 0.8 +25 °C I+/I*=50 0.6 0.6 I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10 0.4
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DSA003719 10/04/10M

B455

Abstract: FMMT455 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 PARTMARKING DETAIL 5 tr 300 E C , =10V 700 PARTMARKING DETAIL 5 tr 300 E C 800 ts V 7 ns 500 FMMT455 , 0.1 1 mA 500 mW -55 to +150 °C Ptot Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 PARAMETER hFE v IC VBE(sat) v IC Single Pulse T est at Tamb=25°C 10 , Tamb=25°C IC/IB=10 80 h - Normalised Gain (%) 1.0 IC Base Current 100 MIN
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B455 DSA003695
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