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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
HIP2100EIBT Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil
HIP6601BCBZA-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6605CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609AIBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

parallel MOSFET Transistors

Catalog Datasheet MFG & Type PDF Document Tags

2SK2503

Abstract: 2A 500V MOSFET . 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm , designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions , ) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm , to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute , Transistors Small switching (60V, 2A) 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig
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2SK2503 2A 500V MOSFET 500v 2A mosfet 100V 8A N-Channel MOSFET transistors mosfet 500v 2A 2SK2504 2SK2715 RK3055E 2SK2887

Mosfet application

Abstract: MOSFET Application Hints transistors, are easy to parallel enhances this development. The main advantages of paralleled MOS , operating states may occur, particularly when n transistors are connected in parallel and one transistor , interesting for the user to know whether n transistors connected in parallel can absorb n times the avalanche , connected in parallel. Semiconductor Group 9 MOSFET Application Hints Example: Case 1 VDS = , investigates the avalanche action of power MOSFETs connected in parallel. A disadvantage of this
Siemens
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Mosfet application MOSFET Application Hints AVALANCHE TRANSISTOR

IBJT

Abstract: General Electric SCR Manual 6th edition Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the , devices must be handled differently when operated in parallel. Power bipolar transistors, SCRs, MOSFETs , applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel , Operation of SCR's. R1 +5V 7402N [2] Use Equations to Parallel Transistors. Otto R. Buhler, IBM , . [7] Parallel Operation of MOSFET's in DC-DC Converters, Rudy Severns, Siliconix, Powertechnics
Intersil
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AN9319 IBJT General Electric SCR Manual 6th edition TA84-5 Rudy Severns ISO9000

IBJT

Abstract: AN9319 bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but , differently when operated in parallel. Power bipolar transistors, SCRs, MOSFETs and IGTs all have different , MOSFET voltage drop plus the bipolar VBE drop apparently parallel by a pnp-transistor. Note Copyright , 6.2, Parallel Operation of SCR's. [2] Use Equations to Parallel Transistors. Otto R. Buhler, IBM
Harris Semiconductor
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SCR Handbook, General electric 5 hp DC motor speed control using scr d50026 AN918 MOTOROLA 14v 10A mosfet

IBJT

Abstract: "General Electric SCR Manual" 6th Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but , devices must be handled differently when operated in parallel. Power bipolar transistors, SCRs, MOSFETs , All the conventional wisdom applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors. 1. 2. Note that 15 paralleled
Fairchild Semiconductor
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AN-7512 7512 low drop ic General Electric Semiconductor gto 5A 500V AN918 Paralleling Power MOSFETs in Switching Applications Pelly

transistor bt 808

Abstract: "General Electric SCR Manual" 6th Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te , composed of the MOSFET voltage drop plus the bipolar VBE drop apparently parallel by a pnp-transistor. Note that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the , All the conventional wisdom applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors. 1. 2. Note that 15 paralleled
Fairchild Semiconductor
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transistor bt 808 BT thyristor 808 General Electric SCR components Data Manual transistor 4317 AN-918 Paralleling Power MOSFETs in Switching Applications

AN918 MOTOROLA

Abstract: General Electric SCR Manual 6th edition Equations to Parallel Transistors. Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors, by , Parallel Operation Of Semiconductor Switches Application Note June 1993 (Figure 1). The , to parallel operation. In uninterruptable power supplies demands for current handling capability
Intersil
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AN-918 AN9320 ta84 1/AN918 MOTOROLA Parallel operation mosfet

"General Electric SCR Manual" 6th

Abstract: General Electric SCR Manual 6th edition Equations to Parallel Transistors. Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors, by , Harris Semiconductor No. AN9320 Harris Power June 1993 Parallel Operation Of , with SCR's [1], bipolar transistors [2-4] darlingtons [5] and field effect transistors [6-10], have
Harris Semiconductor
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SCR Applications Handbook HEXFET Power MOSFET designer manual SCR PNP NPN emitter area General electric SCR manual

General Electric SCR Manual 6th edition

Abstract: Siliconix Handbook section of Figure 7. Like the MOSFET, the IGT consists of many individual cells connected in parallel , Parallel Transistors. Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn, General Electric , Applications, by Kim Gauen, Motorola, Application Note AN-918, 1984. [7] Parallel Operation of MOSFET's in , Applications Handbook, Siliconix, Inc., Chapter 5.3, Parallel Operation of Power MOSFET's (TA84-5). [10
Fairchild Semiconductor
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Siliconix Handbook Severns SCR Manual paralleling mosfet transistor GTO SCR

motorola 7513

Abstract: "General Electric SCR Manual" 6th section of Figure 7. Like the MOSFET, the IGT consists of many individual cells connected in parallel , Equations to Parallel Transistors. Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors, by , Parallel Operation Of Semiconductor Switches Application Note Title N93 bt raleran Of
Fairchild Semiconductor
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motorola 7513 fairchild reliability report transistor fet cross reference Analog/NTP 7513 12v DC motor speed control using scr

Ultrasonic humidifier circuit

Abstract: 2SK962 equivalent must often be connected in parallel. Power MOSFETs can more easily be paralleled than bipolar transistors because the power MOSFET has a positive temperature coefficient which is self-compensating for , device. Therefore, 4.7Q or larger resistor should be connected in series to each of the parallel MOSFET , capabilities. A power MOSFET consists of several ten thousands FET elements, interconnected in parallel on a , \ I POWER MOSFET APPLICATION NOTES i Typical power MOSFET applications I 700- 800 900
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Ultrasonic humidifier circuit 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 100VAC 80VDC 220VAC

XM0830SJ

Abstract: smd code marking 162 sot23-5 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI , Type List 73 Support material 75 3 RF Bipolar Transistors & Active Bias Controller fT , Transistors BCR400W BCR410W Maximum Ratings VS [V] 18 18 ID [mA] 10 0.5 Ptot [mW] 330 100 DC Characteristics with Stabilized NPN Transistors (TA = 25°C) Relative Change IC/IC VS (min
Infineon Technologies
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XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF517 BF770A BF771 BF775 BF799 BF799W

practical application of schmitt trigger

Abstract: 3 phase SCR dimmer connected in a circuit (Kirchhoff's Law) Resistors in Series Resistors in Parallel The effects of more , capacitor Capacitor time constants Capacitors in Series and Parallel DC Basics - Power Power , Applying p.d. to a coil Inductors in Series and Parallel AC Basics - Introduction AC Waveform , parallel connected components Impedance of parallel connect components with an AC signal applied Power , parallel LCR circuits High pass filters Resonance in parallel LC circuits Resonance in parallel LCR
Feedback Group
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practical application of schmitt trigger 3 phase SCR dimmer triac diac applications circuit diagram 3 phase SCR dimmer circuits 2 coil electromagnetic induction POWER AMPLIFIERS CIRCUIT DIAGRAMS
Abstract: MOSFET as to drive method, switching time, safe operation area, breakdown voltage, ON voltage, parallel , Power Transistors and Power MOSFETs Bipolar Power Transistor Power MOSFET D C B Symbol , Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and , , bipolar transistors, where such effects create more serious design problems. Also, the input impedance of , Power MOSFET Construction Power MOSFETs are classified into three major types as shown in Figure 2.1 Toshiba
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LTC1172

Abstract: CTX110092 technology used to manufa cture the Zetex transistors eliminates the need for parallel collector emitter , , the TO126 or TO220 packaged output transistors normally used require parallel collector emitter , cture the Zetex transistors eliminates the need for parallel collector emitter protection diodes. The , Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury , or expensive SOT89, SOT223 and D-Pak surface mount transistors. voltage performance given by the
Zetex Semiconductors
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FMMT718 FMMT618 LTC1172 CTX110092 transistor npn 12V 1A Collector Current 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter FMMT618/718 FMMT619 BCP56 CTX110092-1
Abstract: â'15 V 5 μs/div 0 6 Power MOSFET in Detail 5.6 Parallel Connections Power MOSFETs , Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors , power MOSFETs by dropping the gate voltage to zero but, as with bipolar transistors, it is also possible to turn a Power MOSFET OFF quickly by reducing the value of the charge Q to zero. The charge Q Toshiba
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2sk3065

Abstract: circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 98 Transistors FElectrical characteristics (Ta = 25_C) 2SK2103 FElectrical characteristic curves 99 Transistors 2SK2103 100 Transistors 2SK2103 FSwitching characteristics measurement circuit 101 Transistor , Transistors Small switching (30V, 2A) 2SK2103 FFeatures 1) Low on-resistance. 2) Fast
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2sk3065 2SK3065

BUZ MOSFET

Abstract: SIEMENS MOSFET application transistors from Siemens, designers can implement semiconductor switches with a drain-source on resistance as , transistors also feature gate drive voltages of 5 and 10 V respectively for these two package types at a , electronics in particular. The key design aims of the S-FET power transistors were minimum drain-source on , ruggedness of the transistors in terms of avalanche breakdown and commutation stability. Semiconductor Group 1 MOSFET Fundamentals b c a d SIP00317 SIP 1 SIP 2 SIP 3 m-FET
Siemens
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BUZ MOSFET SIEMENS MOSFET application Mosfet 1 cell switch low voltage low resistance T0-220 P-DSO-28 P-DS0-28

MG400H1FL1

Abstract: calculation of IGBT snubber laying out the devices. (4.4) Using method of direct parallel When connecting transistors in parallel , circuit design is extremely important for the effective and reli able operation of the transistors for the target service life. Semiconductor products such as transistors and diodes all have one thing in common , are maximum values beyond which the service life and reliability of the transistors cannot be , ratings All transistors have emitter (source), base (gate) and collector (drain) terminals which are used
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MG400H1FL1 calculation of IGBT snubber TOSHIBA Thyristor transistor circuit design

SMBJ5A

Abstract: irf640m EEPROM V Bipolar Transistors S Correction Low Voltage MOSFET Horizontal Deflection , Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage , DDR110 Various Standard Logic PROCESSOR MOSFET SCHOTTKY DALC DVI HDD CD/DVD IDE+ 1394 , ) KBMF01SC6 Keyboard & Mouse EMI Filter -30 300 ST1284-01A8 Parallel Port EMI Filter 4.7k
STMicroelectronics
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SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET circuit diagram adsl modem board ESDA25W5 ESDA25B1 DALC208SC6 IEEE1394 DALC112S1 QSOP28
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