NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: V Pulse measurement Rank classification Rank hFE Marking Symbol Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 PQ PR PS 1 Transistor 2SD1511 2SD1511 PC - Ta IC - VCE , Transistor 2SD1511 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency , s 1.5�1 4.5�1 1.6�2 Features 2 1 (Ta=25癈) marking Parameter Symbol , Collector current IC 1 A Marking symbol : P Internal Connection * Collector power ... | Original |
3 pages, |
2SD1511 panasonic transistor marking pr 2SD1511 abstract |
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| Abstract: Rank hFE Marking Symbol 624 Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 PQ PR PS V MHz *2 *1h V Pulse measurement Transistor 2SD1511 2SD1511 PC - Ta IC - VCE , Transistor 2SD1511 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency , collector current ICP 1.5 A Collector current IC 1 A Marking symbol : P Internal , assist customers with the selection of Panasonic semiconductor products best suited to their ... | Original |
3 pages, |
2SD1511 2SD1511 abstract |
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| Abstract: Transistor 2SD2240 2SD2240, 2SD2240A 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage , VCB = 100V, IE = 0 VEBO Emitter to base voltage Marking symbol : P(2SD2240 2SD2240) L(2SD2240A 2SD2240A) 礎 , , GV = 80dB Rg = 100k, Function = FLAT 130 330 1 V Rank classification Rank Marking Symbol R S hFE 130 ~ 220 185 ~ 330 2SD2240 2SD2240 PR PS 2SD2240A 2SD2240A LR LS 1 2SD2240 2SD2240, 2SD2240A 2SD2240A Transistor PC - Ta IC - VCE 120 100 100 75 50 25 80 60 ... | Original |
3 pages, |
panasonic transistor marking pr 2SD2240A 2SD2240 2SD2240 abstract |
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| Abstract: classification Rank Marking Symbol R S hFE 130 ~ 220 185 ~ 330 2SD1821 2SD1821 PR PS 2SD1821A 2SD1821A LR LS 1 2SD1821 2SD1821, 2SD1821A 2SD1821A Transistor PC - Ta IC - VCE 120 100 160 , Transistor 2SD1821 2SD1821, 2SD1821A 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage , Type Package Marking symbol : P(2SD1821 2SD1821) L(2SD1821A 2SD1821A) (Ta=25癈) Parameter Symbol , assist customers with the selection of Panasonic semiconductor products best suited to their ... | Original |
3 pages, |
panasonic transistor marking pr 2SD1821A 2SD1821 2SD1821 abstract |
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| Abstract: Transistor 2SD0814 2SD0814, 2SD0814A 2SD0814A (2SD814 2SD814, 2SD814A 2SD814A) Silicon NPN epitaxial planer type For high , Characteristics V 100 mA JEDEC:TO�6 EIAJ:SC� Mini Type Package Marking symbol : P(2SD0814 2SD0814) L , V 185 Rg = 100k, Function = FLAT V Rank classification Rank R S hFE Marking Symbol Q 90 ~ 155 130 ~ 220 185 ~ 330 2SD0814 2SD0814 PQ PR PS 2SD0814A 2SD0814A LQ LR , , 2SD0814A 2SD0814A Transistor PC - Ta IC - VCE 120 100 160 120 80 40 80 60 0.4mA ... | Original |
3 pages, |
2SD814A 2SD814 2SD0814A 2SD0814 2SD0814 abstract |
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| Abstract: Transistor 2SD1821 2SD1821, 2SD1821A 2SD1821A Silicon NPN epitaxial planar type (0.425) Unit: mm For high , Junction temperature Tj 150 癈 Storage temperature Tstg -55 to +150 Marking symbol P , classification Rank R S hFE1 130 to 220 185 to 330 Marking symbol Publication date: April 2002 2SD1821 2SD1821 PR PS 2SD1821A 2SD1821A LR LS SJC00228BED SJC00228BED 1 2SD1821 2SD1821, 2SD1821A 2SD1821A PC Ta , These materials are intended as a reference to assist customers with the selection of Panasonic ... | Original |
3 pages, |
2SD1821A 2SD1821 2SD1821 abstract |
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| Abstract: °C Marking Symbol: 5K Electrical Characteristics Ta = 25°C±3°C Parameter Drain current *1 , 2. A protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor might be damaged. So please be careful not insert reverse. 3. , ren . 1.20 ay e co ha wa nt ac ve l o f to 5° c 0.20 au our ur se pr sa d od le yo u , by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our ... | Original |
3 pages, |
diode code GW 17 GV2 LE 2sk3585 2002/95/EC 2SK3585G 2002/95/EC abstract |
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| Abstract: pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t , temperature Storage temperature Marking Symbol: 5K Electrical Characteristics Ta = 25°C±3°C , protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor might be damaged. So please be careful not insert reverse. 3. *1: ID is , by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our ... | Original |
3 pages, |
2SK3585 2002/95/EC 2SK3585G 2002/95/EC abstract |
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| Abstract: Composite Transistors XP05543 XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1.25�1 2.0�1 2 5 3 High transition frequency fT. Two , � to +150 Tstg mW 150 Tj 癈 Marking Symbol: EZ Internal Connection 1 3 Tr1 , tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl , and to any intellectual property right or other right owned by Panasonic Corporation or any other ... | Original |
3 pages, |
2SC3904 XP05543 XP05543 abstract |
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| Abstract: Composite Transistors XP06531 XP06531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing 1.25�1 2.0�1 5 4 2SC3130 2SC3130 � 2 elements , : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC� S'ini Type Package (6'in) Marking , an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo , by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our ... | Original |
3 pages, |
2SC3130 XP06531 XP06531 abstract |
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