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oxner

Catalog Datasheet MFG & Type PDF Document Tags

an104 siliconix

Abstract: TO-226A AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. SPICE is the de facto standard for simulating circuit performance. Abundant libraries are available, but many of them were derived from data sheets. Data sheets seldom define the productat best they offer
Temic Semiconductors
Original
2N4391 2N4416 2N4339 an104 siliconix TO-226A U421 jfet Siliconix AN104 jfet spice model SILICONIX 2N4391 SST111 SST4416 SST202
Abstract: ons, or oxner data. T. AUBIN REFERENCE 7/19/99 / DATE ^ -, EAR 967292-0 APPROVER CAD -
OCR Scan
MIL-P-19468 51AX000C

J111 spice model

Abstract: U310 spice model AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto standard for simulating circuit performance. Abundant libraries are available, but many of them were derived from data sheets. Data sheets seldom define the product-at best they offer minimum performance
Temic Semiconductors
Original
SST176 J111 spice model U310 spice model HC-49/pspice model GASFET SST310 spice model 2n4391 spice SST310 2N5116

Severns

Abstract: Oscillation mosfet between gate and source does not control parasitic oscillation. References [1] E. Oxner; "Analyzing , , E. Oxner; "Parallel Operation of Power MOSFETs", Technical Article TA 84-5, Siliconix Inc. [7] B
Advanced Power Technology
Original
APT5024BLL APT9901 Severns Oscillation mosfet zener diode capacitance POWER MOSFET APPLICATION NOTE ED31 diode parallel connection of MOSFETs ED-31

FET pair n-channel p-channel

Abstract: FET P-Channel Switch AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Circuit Applications Getting n-type performance out of p-type FETs has meant larger area geometries with correspondingly higher inter-electrode capacitances. Consequently, a truly complementary
Temic Semiconductors
Original
2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT TP0610 9939DY 9942DY 9958DY VP0300L

siliconix FET DESIGN

Abstract: FETs in Mixers Ed Oxner o lb DESIGN IDEA High-Performance FETs In Low-Noise VHF Oscillators Ed Oxner Most communications receivers are limited in their dynamic range because of saturation in the early stages of RF amplifiers or mixers. However, some receiver designs are available which overcome this limitation by using parametric amplifiers and converters to achieve spectacular increases in dynamic range. There still remain certain limitations in dynamic range which cannot be remedied by parametric devices. In these cases, the problem lies
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siliconix FET DESIGN FETs in Mixers Ed Oxner FET U310 Ed Oxner oscillator siliconix DESIGN idea Ed Oxner

FET U310

Abstract: uhf amplifier design H Siliconix DESIGN IDEA Wideband UHF Amplifier with High-Performance FETs Ed Oxner INTRODUCTION A new freedom in UHF amplifier design is possible with high-performance "Super FETs" such as the Siliconix U310 Junction FET. Typical advantages include a closely-matched 75 ohm input for extremely low return loss in cable systems, and high spurious response rejection with the 3rd order IM intercept measured at +29 dB.O Additionally, the high common-gate forward transconduc-tance of the U310 (20,000
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uhf amplifier design U310 U310 fet u310 siliconix fet 652 h siliconix fet

2n7000 complement

Abstract: mosfet discrete totem pole drive CIRCUIT AN804 Siliconix PChannel MOSFETs, the Best Choice for HighSide Switching Ed Oxner Circuit Applications Historically, pchannel FETs were not considered as useful as their nchannel counterparts. The higher resistivity of ptype silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to ntype silicon. Switching GroundReturn Loads Getting ntype performance out of ptype FETs has meant larger area geometries with correspondingly higher interelectrode capacitances
Temic Semiconductors
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TP0610L VP2020L 2n7000+complement 2n7000 equivalent TO226AA oxner ttl driver mosfet Si9939DY VN0300L VN2010L TP0202T TN0201T

AN601

Abstract: SMP30N10 AN601 Siliconix Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to , , 1977). [2] Edwin S. Oxner, Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI
Temic Semiconductors
Original
SMP30N10 bipolar transistor tester john worman ED-29 HDL-TR-1978

SMP30N10

Abstract: MOSPOWER Design 1983 AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not , ). 2. Edwin S. Oxner, "Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI Proceedings
Temic Semiconductors
Original
MOSPOWER Design 1983 uis test US ARMY TRANSISTOR CROSS SILICONIX 5510E UIS tester MOSPOWER Design Data Book 1983 avalanche mode transistor JC-25

5510E UIS tester

Abstract: bipolar transistor tester AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not , Edwin S. Oxner, "Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI Proceedings, 132­42
Temic Semiconductors
Original
siliconix an601

Granberg

Abstract: motorola LM335 . Bell, Operational Amplifiers, Prentice Hall, 1990. 5. E. Oxner, FET Technology and Application
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Original
AN1643 Granberg motorola LM335 ericsson rf Granberg dye MOTOROLA small signal transistors Ericsson Base Station

N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate potential not only to be higher but to be of either polarity. Earlier, small-signal MOSFETs were classed as being quite sensitive to ESD. With the introduction of the ND2012 and
Temic Semiconductors
Original
ND2406 ND2410 2N692 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode

N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation AN901 Siliconix DepletionMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementmode. The nchannel enhancementmode MOSFET (Figure 1c), requires a positivepolarity gate voltage referenced to the source to provide current conduction. A principal advantage of the depletionmode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletionmode structure, the MOSFET permits
Temic Semiconductors
Original
normal scr operation depletion mode current limiter depletion-mode Depletion-Mode MOSFET mosfet vs SCR n channel depletion MOSFET

70572

Abstract: bipolar transistor tester (Wiley-Interscience: New York, 1977). Edwin S. Oxner, "Static and Dynamic dV/dt Characteristics of Power MOSFETs,"
Vishay Siliconix
Original
70572 RPKC

AN-1084

Abstract: Power MOSFET Basics Applications," Edwin S. Oxner "Power MOSFETs - Theory and Applications," Duncan A. Grant and John Gower
International Rectifier
Original
AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual

HEXFET Power MOSFET designer manual

Abstract: BJT Gate Drive circuit Semiconductor Devices," S. M. Sze "Power FETs and Their Applications," Edwin S. Oxner "Power MOSFETs - Theory
International Rectifier
Original
BJT Gate Drive circuit POWER BJTs BJT characteristics P-Channel Depletion Mosfet N-Channel jfet 200V depletion Switching Power Supply Schematic Diagram using mosfet

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual Applications," Edwin S. Oxner "Power MOSFETs - Theory and Applications," Duncan A. Grant and John Gower
International Rectifier
Original
N-Channel jfet 100V depletion BJT with V-I characteristics TRANSISTORS BJT with low gate voltage depletion mode power mosfet NPN Power BJT 100v circuits using BJT

schematic diagram welding inverter

Abstract: Three phase inverter mosfet Diagram Wiley & Sons, New York 1989 5. E. Oxner, "Power FETS and Their Applications", Prentice-Hall Inc
Powerex
Original
schematic diagram welding inverter Three phase inverter mosfet Diagram mosfet based power inverter project schematic diagram for welding inverter mosfet base induction heat circuit schematic diagram induction heating

Granberg

Abstract: AR305 , Combiners and Splitters," Proceedings of RF Expo, February 1986. 3. Edwin S. Oxner, "Controlling Oscillation
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AR305 create uhf vhf tv matching transformer Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers AR305/D
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