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Part Manufacturer Description Datasheet BUY
JRCW016A0R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 16A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 48V; Iout: 9.4A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
FNW700R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier Module; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
FNW500R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier Module; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier Module; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
JRCW450R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 32V; Iout: 14A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 16A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 48V; Iout: 9.4A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
JNCW016A0R GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 16A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-60V); Vout: 32V; Iout: 17A; Efficiency: 0.95; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 32V; Iout: 14A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 16A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 48V; Iout: 9.4A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power
JRCW450U GE Critical Power Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 48V; Iout: 9.4A; Efficiency: 0.94; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 18A; Efficiency: 0.91; : Orca series, Isolated DC-DC fully regulated, board-mounted power amplifier modules; Input Range: 48V (36V-75V); Vout: 28V; Iout: 25A; Efficiency: 0.9 visit GE Critical Power

ofdm amplifier

Catalog Datasheet MFG & Type PDF Document Tags

msc 5530

Abstract: s-parameters of an 60GHz transistor 6.0GHz Power Amplifier P RODUCTION D ATA S HEET EVM VS. OFDM PACKET DUTY CYCLE 99% 8.0 7.0 6.0 64 , Page 5 LX5530 TM ® InGaP HBT 4.5 ­ 6.0GHz Power Amplifier P RODUCTION D ATA S HEET OFDM , LX5530 TM ® InGaP HBT 4.5 ­ 6.0GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION , Power Gain up to ~ 33dB for VC=5V, Icq = 250mA Power Gain > ~28dB across 4.95.85GHz OFDM Mask , APPLICATIONS The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information
Microsemi
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msc 5530 s-parameters of an 60GHz transistor 33EVM msc5530 LX5530LQ-TR

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

Abstract: ofdm amplifier circuit providing the highest reported performance for a WiMAX power amplifier. Here are several WiMAX amplifier designs delivering from two to ten watts OFDM power, using various devices in a , linearity under OFDM modulation. CGH35015S-Based Amplifier Design The CGH35015S employs an unmatched , taken under 802.16-2004 OFDM (3.5 MHz Figure 6 · Photograph of a demonstration amplifier using , GHz. The design of the demonstration amplifier circuits includes the need to provide higher
Cree
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High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram

IC155

Abstract: RMPA2550-252 Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN applications in , current when supply voltage is disabled. 5. Percentage increase above system noise floor, 802.11g, OFDM , 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Electrical , when supply voltage is disabled. 5. Percentage increase above system noise floor, 802.11a, OFDM, 54
Raytheon RF Components
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IC155 54Mbps RAYTHEON

marking cck

Abstract: SE2609L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g or IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2609L is a 2.4 GHz power amplifier designed for use in the 2.4 , , 802.11g, OFDM 54 Mbps o 22 dBm, ACPR < -32 dBc, 802.11b 5.0V Supply Operation with 2.85V reference 28 dB , DST-00369 Rev 1.5 Nov-01-2010 Confidential 1 of 10 SE2609L 2.4 GHz Power Amplifier with
SiGe Semiconductor
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marking cck SE2609L-R SE2609L-AK1
Abstract: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Data Sheet SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: â'¢ High Gain: â'" Typically 27-28 dB gain , '" >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz â'" Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz â'" Meets 802.11g OFDM ACPR requirement up to 22 dBm across , P1dB (Pulsed single-tone signal) across 4.9-5.8 GHz â'" Meets 802.11a OFDM ACPR requirement up to 22 Silicon Storage Technology
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S71304-03-000 16F-6

MRD 532

Abstract: video transmitter 2.4 GHz 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: · High Gain: ­ Typically 27-28 , : ­ >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across , (Pulsed single-tone signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm
Silicon Storage Technology
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MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02-QDF SST13LP02-QDF-K 5805 S71304-01-000

SiGe 2527L

Abstract: SIGE SEMICONDUCTOR 2527l SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2597L is a 2.4 GHz power amplifier designed for , Operation o 19 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 23 dBm, ACPR < -32 dBc, 802.11b 28 dB Gain Integrated temperature compensated power detector Digital power amplifier enable pin (VEN) Lead Free, Halogen Free and
SiGe Semiconductor
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SiGe 2527L SIGE SEMICONDUCTOR 2527l 2527L QAD-00045 00211 se2597 SE2597L-R SE2597L-EK1 DST-00211

ofdm amplifier

Abstract: 7.0 Units dB dBm % dB dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16 OFDM , Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 EVM(2.5) 4.0 Eff(2.5) 20 25 EVM , Type 2/3. Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , Access 802.16-2004 OFDM Subject to change without notice. www.cree.com/wireless Absolute
Cree
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CGH27015 CGH2701

MRD 532

Abstract: 24-wqfn-4x4-QD-1 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: · High Gain: ­ Typically 27-28 , : ­ >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across , (Pulsed single-tone signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm
Silicon Storage Technology
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24-wqfn-4x4-QD-1

1022 RF

Abstract: Metal Detector Amplifier 2003.03.27 Data Charts Fig. 5 Fig. 6 POUT, PAE vs. PIN (With 54Mb/s, OFDM Modulation , AP1091 2.4~2.5 GHz Power Amplifier 2003.03.27 AP1091 is a linear, two stages power amplifier , with the IEEE802.11b standard, and 19 dBm output power, under 54Mbps OFDM (IEEE802.11g) modulation , Power With 54Mb/s, OFDM Modulation (about 3% EVM) · 28 dB Small Signal Gain · Single 3.3 V Power , ground as well as heat dissipation path for the power amplifier. © 2003 RF Integrated Corporation. All
RF Integrated
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MO-220 1022 RF Metal Detector QFN-16 VSWR Bridge DECTV5 AT2003 DECTv 5M1994

SIGE SEMICONDUCTOR 2527l

Abstract: 2527L SE2598L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2598L is a 2.4 GHz power amplifier designed for , Operation o 19 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 23 dBm, ACPR < -32 dBc, 802.11b 28 dB Gain Integrated temperature compensated power detector Digital power amplifier enable pin (VEN) Lead Free, Halogen Free and
SiGe Semiconductor
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00215 2598L SE2598L-R SE2598L-AK1 DST-00215
Abstract: LX5512E ® TM InGaP HBT 2.4 â'" 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 % , makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g , 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low , power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is Microsemi
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LX5512ELQ LX5512ELQ-TR JESD22-A114-B

dRIVER AMPLIFIER AT 5GHz

Abstract: AH315 AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier · EVM , amplifier in 802.16 WiMAX basestations where high linearity and medium power is required. Typical , dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 25 dB , Driver Amplifier 3.4-3.6 GHz Evaluation Board Standard T/R size = 500 pieces on a 7" reel , AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 600
WJ Communications
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JESD22-A114 dRIVER AMPLIFIER AT 5GHz AH315-PCB AH315-G JESD22-C101 J-STD-020 1-800-WJ1-4401

AH315-G

Abstract: 3.3-3.8 GHz WiMAX 2W Driver Amplifier Product Description The AH315 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 25 dB of gain, while achieving , in a configuration for the driver stage amplifier in 802.16 WiMAX basestations where high linearity , Description 3.3-3.8 GHz WiMAX 2W Driver Amplifier 3.4-3.6 GHz Evaluation Board Specifications and , 2W Driver Amplifier S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, calibrated to device leads
WJ Communications
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AH315G
Abstract: amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 , amplifier applications. The transistor is available in both screwdown, flange and solder-down, pill packages , 1.8 â'" Dec â'¢ 25 % Efficiency at 2.5 % EVM â'¢ WiMAX Fixed Access 802.16-2004 OFDM â , , PAVE = 2.0 W OFDM PAVE Input Capacitance CGS â'" 5.00 â'" pF VDS = 28 V, Vgs = -8 , Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst Cree
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27015P

diode dc components m7 footprint

Abstract: ofdm amplifier LX5512E InGaP HBT 2.4 ­ 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM , of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements , 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5512E is a power amplifier
Microsemi
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diode dc components m7 footprint LX5512E-LQ LX5512E-LQT
Abstract: LX5512E TM ® InGaP HBT 2.4 ­ 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION , @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm 2 Small Footprint (3 x 3 mm ) Low Profile (0.9mm) APPLICATIONS The LX5512E is a power amplifier optimized for WLAN applications in the , 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and , LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications Microsemi
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Abstract: LX5512E InGaP HBT 2.4 â'" 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM , of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements , Current 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5512E is a power amplifier Microsemi
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Abstract: 6.0 7.0 7.0 dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16 OFDM , Broadband Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 25 EVM(2.5) Eff , . Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , OFDM â'¢ WiMAX Fixed Access 802.16-2004 OFDM Subject to change without notice. www.cree.com Cree
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Abstract: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Data Sheet Features: · High Gain: ­ Typically 27-28 dB gain , P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across 2.4-2.5 GHz ­ Added , signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm across 4.9-5.8GHz ­ Added Silicon Storage Technology
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S71304-02-000
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