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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
SN74FB1650PCA Texas Instruments 18-Bit TTL/BTL Universal Storage Transceiver 100-HLQFP 0 to 70 visit Texas Instruments
LM45BIM3X Texas Instruments SOT-23 Precision Centigrade Temperature Sensor 3-SOT-23 -20 to 100 visit Texas Instruments

of transistor sl 100

Catalog Datasheet MFG & Type PDF Document Tags

MDA380

Abstract: 4312 020 36642 BLU99/SL UHF power transistor MDA377 8 MDA378 20 Gp 100 C handbook, halfpage , specification BLU99 BLU99/SL UHF power transistor List of components: C1 = C12 = 33 pF multilayer , DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product , . SOT122D (BLU99/SL). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is , Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor RATINGS
Philips Semiconductors
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MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 BLU99/SL MBK187 MSB055

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor PROVISIONS All Sprague transistor chips (dice) are 100% D-C probe-tested to the minimum specifications , . Generic data is available on request. Visual inspection is 100%. Examples of defects looked for include , SPRflGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS (100% Probed Parameters) TYPE DESCRIPTION BVcio Min. Volts @ lc (mi) BVceo Min. Ic Volts @ (mA , 60 .01 60 10 6 .01 100 500 .01 5 50 mA TE THC-4123 THC-4124 NPN Gen. Purpose 40 30 .01 .01 30 25 1 1
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BC237B BC307A SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 THC-2484 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification , Product specification UHF power transistor BLV99/SL LIMITING VALUES In accordance with the , Semiconductors Product specification UHF power transistor BLV99/SL CHARACTERISTICS Tj = 25 °C. , , typical values. Philips Semiconductors Product specification UHF power transistor BLV99/SL , , typical values. Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load
Philips Semiconductors
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SL 100 NPN Transistor base emitter collector blv99 BLV99/SL MSB007 MBB012

SL 100 NPN Transistor base emitter collector

Abstract: mda301 DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification , Philips Semiconductors Product specification UHF power transistor BLT92/SL RATINGS Limiting , Semiconductors Product specification UHF power transistor BLT92/SL CHARACTERISTICS Tj = 25 °C unless , transistor BLT92/SL APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit , copper-sheet 2 × 35 µm. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality
Philips Semiconductors
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mda301 MDA300 BLT92 BLT92/SL

122d transistor

Abstract: SL 100 NPN Transistor UHF power transistor BLU11/SL MDA311 4 MDA312 20 Gp (dB) handbook, halfpage 100 , DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL , transistor BLU11/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , Product specification UHF power transistor BLU11/SL CHARACTERISTICS Tj = 25 °C unless otherwise
Philips Semiconductors
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122d transistor MDA309 122d BLU11/SL

SL 100 NPN Transistor base emitter collector

Abstract: specification UHF power transistor BLV99/SL FEATURES â'¢ Emitter-ballasting resistors for an optimum , BIAPX product specincation UHF power transistor BLV99/SL LIMITING VALUES In accordance with the , Philips Semiconductors UHF power transistor BLV99/SL N AHFR PHILIPS/DISCRETE b CHARACTERISTICS , Product specification UHF power transistor BLV99/SL N AMER PHILIPS/DISCRETE bTE D APPLICATION , as a function of drive power, typical values. Ruggedriess in class-B operation The BLV99/SL is
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UB8012 7Z94631 7Z94G85

transistor tt 2222

Abstract: TT 2222 npn . power transistor bSE D m 711DÃ"2b OObETÛ'i TbT â  BLU99 BLU99/SL \_ IPHIN CHARACTERISTICS Tj , transistor h5E D m 711002b 00^27^1 Slfl â  BLU99 BLU99/SL PHIN J APPLICATION INFORMATION (part I) R.F , dielectric (er = 2,74) and a thickness of 1/16 inch. American Technical Ceramics capacitor type 100 A or , Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE D â  711002t. 00^27^3 «PHIN BLU99 BLU99/SL , U.H.F. power transistor b5E D m 711DflSb DObE?^ lb3 «PHIN BLU99 BLU99/SL APPLICATION INFORMATION
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transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222

BLV91

Abstract: ferroxcube 1988 transistor BLV91/SL List of components: C1 = C11 = 33 pF multilayer ceramic chip capacitor C2 = C3 = , DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL , Semiconductors Product specification UHF power transistor BLV91/SL RATINGS Limiting values in , Product specification UHF power transistor BLV91/SL CHARACTERISTICS Tj = 25 °C unless otherwise
Philips Semiconductors
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BLV91 ferroxcube 1988 MDA401 mda406 BLV91/SL
Abstract: i l â  ff BLU99 BLU99/SL D U.H.F. power transistor APX 100 â'™c (%) 50 0 , transistor bbS3^31 OD2flAT4 254 â  BLU99 BLU99/SL APX A P P LIC A T IO N IN F O R M A T IO N , Technical Ceramics capacitor type 100 A or capacitor of same quality. I f March 1993 251 N , /32 in. * American Technical Ceramics capacitor type 100 A or capacitor of same quality. r , N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F -
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S3T31 T122A T122D 53T31

ITT 2222 npn

Abstract: ITT 2222 A inch. * American Technical Ceramics capacitor type 100 A or capacitor of same quality. ^ March 1993 , /SL b^E » bbSBTBl 00200=15 no â  APX I 100 mm L2 [2 «.g] .u " cg> jfl JL pLS d 0 L4-C7 , (er = 2,74) and thickness of 1/32 in. American Technical Ceramics capacitor type 100 A or capacitor , N AMER PHILIPS/DISCRETE blE D â  bbäBIBl DDEÃfl^D bOI â  BLU 99 BLU99/SL IAPX Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio
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ITT 2222 npn ITT 2222 A itt 2222 blu99 transistor SOT122A

SL 100 NPN Transistor

Abstract: blt91 INTERNATIONAL U.H.F. power transistor fc.SE t> m 711002b â¡â¡b5t.7s Lm «phin BLT91/SL J 0 0 â HI , PHILIPS INTERNATIONAL bSE D B 711GÃ5ti 00L2b71 0 4^1 â  PHIN BLT91/SL _J\_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations , mounted on a printed wiring board. â'¢ gold metallization ensures excellent reliability. The transistor , of operation VCE V f MHz PL W GP dB VC % c.w. (class-B) 7,5 900 1,5 >6,0 >50 MECHANICAL DATA Fig
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blt91 Philips 4312 020 ferroxcube wideband hf choke International Power Sources sl 100 transistor BLT91/SL 7Z058O7

sot172

Abstract: transistor BLV99/SL philips international Fig.7 Class-B test circuit at f = 900 MHz. List of components , Product specification UHF power transistor_ _BLV99/SL - philips international - CHARACTERISTICS , MPHIN Product specification UHF power transistor - philips international BLV99/SL APPLICATION , . Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load mismatch corresponding , ] 7110fl2b oobaorfl 4^3 mphin Product specification UHF power transistor BLV99/SL philips international 0
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sot172 MDB012 7Z94685
Abstract: . power transistor BLT91/SL J V CHARACTERISTICS Tj = 25 °C unless otherwise specified , .K power transistor BLT91/SL 7Z97438 129 mm 7Z97439 Fig. 4 Printed wiring board and , /DISCRETE bTE bb53^31 DDaa?1 Ob? ! D L BLT91/SL 100 , » bL.53^31 0026760 U.H.F. power transistor BLT91/SL J 900 f(MHz) 1000 Fig. 9 , N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER -
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7Z95607 00E6775

BLV101A

Abstract: BLX94 BLU86 BLV91/SL BLV93 8 13 S/F 100 BLV90 BLV92 BLV94 15 13 S/F 100 , 45 25 900 100 BLV99/SL BLV100(3) BLV101B 25 BGY916 BLV958 75 BLV103 , main RF power application areas. A comprehensive range of output power levels is indicated, together , TRANSMITTERS (100 to 400 MHz) Bipolar INPUT POWER (mW) 1st STAGE 2nd STAGE 3rd STAGE PL(carr , ) BLF543 BLF546 80 28 30 BLF521(1) BLF543 BLF547 100 28 100 BLF521(1
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BLW91 LLE18010X LLE18040X BLV101A BLX94 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BLW89 BLW90 BLX94C BLU60/28 BLF522

ferroxcube wideband hf choke

Abstract: SL 100 power transistor N AMER PHILIPS/DISCRETE tiTE T> m bbS3T31 DDEB77M S6S â  APX BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations , mounted on a printed wiring board. â'¢ gold metallization ensures excellent reliability. The transistor , of operation LLJ f MHz PL W Gp dB VC % c.w. (class-B) 7,5 900 1,5 >6,0 >50 MECHANICAL DATA Fig. 1 , beryllium oxide, the dust of which is toxic. The device is entirety safe provided that the BeO disc is not
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SL 100 NPN Transistor

Abstract: transistor tt 2222 PHILIPS INTF-h-! bSE D m 711002b 00b2fab4 bCH HPHIN BLT90/SL A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the , . power transistor b5E D â  711002b 0Qb2bbö 254 «RHIN BLT90/SL A 0 ® o o o o o 0 0 ®M2 , . The transistor has a 4-iead studless envelope with a ceramic cap (SOT-172D). All leads are isolated , ciass-B circuit.4' mode of operation VCE V f MHz PL W Go dB TÌC % c.w. (class-B) 7,5 900 0,75 >7,0 >50
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43120203664 Philips 119 BLT90/SL

SL 100 NPN Transistor

Abstract: T1 SL 100 NPN Transistor Single-in-line SL B description The new BULDxx range of transistors have been designed specifically , package, and the TO220 pin compatible SL package. Use of the SL package allows for a 40% height saving , testing of all parameters. 1 BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED , BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power , New Ultra Low-Height SOIC Power Package q Tightly Controlled Transistor Storage Times q
Power Innovations
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T1 SL 100 NPN Transistor VCBo-600V
Abstract: AMER PHILIPS/DISCRETE bbSB'iai 0026767 133 «A PX BLT92/SL b'lE D UHF power transistor Fig , N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 â  IAPX BLT92/SL bTE J > UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations , ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA mode of operation CW -
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S3R31

SL 100 NPN Transistor

Abstract: T1 SL 100 NPN Transistor VIEW) NC - No internal connection SL PACKAGE (TOP VIEW) PACKAGE PART # SUFFIX Small-outline D Small-outline taped and reeled DR Single-in-line SL device symbol 3 description The new BULDxx range of , established 8 pin low height surface mount D package, and the TO-220 pin compatible SL package. Use of the SL , e TRAN SYS EUCTRONICS LIMITED BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH , Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode
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BULD125KC sl diode NPN transistor Electronic ballast 54t6 high frequency silicon transistor T0220

122d transistor

Abstract: Si 122D BLUÃI/SL V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily , Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE D 711Dö2b â¡â¡ b2704 015 «RHIN BLU11/SL , . RUGGEDNESS The BLU11/SL is capable of withstanding a full load mismatch (VSWR = 50 through all phases) at P , reliability. â'¢ the device can be applied at a P(_ of max. 1,5 W when it is mounted on a printed wiring board (see Fig. 6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic
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Si 122D BLU11/Si 122D transistor 4312
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