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Part Manufacturer Description Datasheet BUY
2N2222AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey
2N2222AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey
2N2222 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 visit Digikey
2N2222A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN visit Digikey
2N2222AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey

npn+bjt+2N2222

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN 2N2222 ­ 2N2222A PNP 2N2907 ­ 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and , They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f , Value 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 Unit 40(1) 30 75 60 6 5 V V V 800 mA , 2N2222 2N2222A 2N2222 Unit 350 K/W 146 K/W 1/3 NPN 2N2222 ­ 2N2222A PNP 2N2907 ­ RichTek Technology
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RT9052 J-STD-020 DS9052-00
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ) Dated : 07/12/2002 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , =10V ST 2N2222 hFE 100 - 300 - at IC=500mA, VCE=10V ST hFE 30 - - - 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO RichTek Technology
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sot-23-6 pwm controller sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information DS9052-01
Abstract: 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Unit Value ST 2N2222 ST 2N2222A , to +150 O G S P FORM A IS AVAILABLE C C 2N2222 / 2N2222A Characteristics at Tamb=25 OC , Gain at IC=150mA, VCE=10V ST 2N2222 hFE 100 - 300 - at IC=500mA, VCE=10V ST , 2N2222 at VCB=50V ST ICBO - - 0.01 ÂuA at VCB=60V 2N2222A ICBO - - Comset Semiconductors
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2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 100MH
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Unit Value ST 2N2222 ST 2N2222A , : 07/12/2002 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , =10V ST 2N2222 hFE 100 - 300 - at IC=500mA, VCE=10V ST hFE 30 - - - 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO Semtech Electronics
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2N2222A plastic package 2N2222A plastic 2N2222 hfe 2n2907 to92 2N2222A TO-92 OF transistor 2N2222 to-92
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2222A (VCB=60Vdc, IE=0) (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC Bytes
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2N2222 - to-92 2N2222 NPN Transistor to 92 transistor 2n2222a to-92 2N2222 transistor 2n2222a to 92 npn transistor to 92 2n2222
Abstract: MAXIMUM RATINGS Rating Symbol 2N2221 2N2222 2N2221A 2N2222A Unit Collector-Emitter Voltage , Operating and Storage Junction Temperature Range tJ- Tslg -65 to +200 UC 2N2221 2N2221A* 2N2222 2N2222A , CHARACTERISTICS Collector-Emitter Breakdown Voltage Ic = 10 mAdc, IB= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CEO 30 40 Vdc Collector-Base Breakdown Voltage Ic = 10 nAdc, IE= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CBO 60 75 Vdc Emitter-Base Breakdown Voltage IE = 10 nAdc, lc= 0 2N2221, 2N2222 2N2221A, 2N2222A V Semtech Electronics
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pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 OF transistor 2N2222 Datasheet 2N2222 transistor npn 2n2222 transistor
Abstract: 2N2222 NPN LM8543PWM PWM32 LM85 +12V +12V 470 6.2k TAC Pentium 4 Processor 4.3k 100 , 0.1 uF 0.01 2N2222 PWM TACH4/ AddSel 2.5V 100 pF 470 PWM2 100 pF 3.3V STBY 2N2222 +12V +12V 6.2k TACH2 REMOTE2- Processor Core Voltage 2.5V Supply 12V , 470 TAC 470 +12V +12V 6.2k From Processor VRM 6.8k SMBDAT GND 2N2222 PWM 6.2k SMBCLK I/O Controller Hub SMBus 4.3k 4.3k TAC 36 0.01 PWM 2N2222 Figure Micro Commercial Components
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2n2222 2n2222A 2N2222, 2N2222A ic 4521 2N2222 application note J 2N2222 mw 4953
Abstract: SEMICONDUCTOR I te c h n ic a l d a ta 2N2222. 2N2222A NPN Silicon Small-Signal Transistors , Suite 14 Ronkorkoma. N.Y. 1177t, M A X IM U M R A T IN G S 2N2221 2N2222 30 60 5.0 800 2N2221A , = 10 ^Adc) 2N2221, 2N2222 2N2221 A, 2N2222A v (BR)EBO 2N2221, 2N2222 2N2221 A, 2N2222A >CES 2N2221, 2N2222 2N2221 A, 2N2222A 10 10 50 60 jiAdc v (BR)CEO 2N2221. 2N2222 2N2221 A, 2N2222A V(BR)CBO 60 75 30 , ) ON CHARACTERISTICS DC Current Gain (Iq = 0.1 mAdc. Vq e = 10 Vdc) 2N2221 2N2222 2N2221A 2N2222A (*C = -
OCR Scan
2N2222A JANTX 2N2222A JANTXV BR 2N2222A NPN 2N2222A JAN 2n2222 jan 2N222
Abstract: base 2N2222; 2N2222A DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VcEO collector-emitter voltage 2N2222 2N2222A !c , 2N2222 2N2222A turn-off time = 150 mA; = 15 mA; = -1 5 mA 75 hpE ft MHz MHz ns toff l Bon , SYMBOL VcBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A v ebo 2N2222; 2N2222A CONDITIONS open emitter - MIN. MAX. UNIT 60 75 30 40 5 6 National Semiconductor
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3PWMLM855 LM853 3LM85 2PWM100 LM85PWM 2n2222 national semiconductor lm 3904 national 2n2222 2N2222 national 1LM85 PWM100
Abstract: !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC -
OCR Scan
st 2n2222a 2N2222 base capacitance 2N2221-2N2222 2N2222A st ST 2n2222 2n2222 t
Abstract: Street Chatsworth !"# $ % !"# 2N2222 2N2222A NPN Switching Transistors Rating 2N2222 2N2222A , Ratings Symbol VCEO Rating Collector-Emitter Voltage TO-18 VCBO Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW W K/W K/W Units IC , current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB=60Vdc, IE=0,TA , =10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=1.0Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2222 (IC -
OCR Scan
2n2222 h parameter values 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 uA at VCB=60V ST 2N2222A ICBO - - 0.01 uA ST 2N2222 Micro Commercial Components
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors , May 29 Philips Semiconductors Product specification NPN switching transistors 2N2222 , . MAX. UNIT open emitter - 60 V - 75 V 2N2222 - 30 V 2N2222A - , MHz - 250 ns 2N2222 2N2222A VCEO collector-emitter voltage open base IC , V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 2N2222A toff Micro Commercial Components
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Abstract: MCC TM Micro Commercial Components 2N2222 2N2222A #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 , Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 , =0) 2N2222 (VCB=50Vdc, IE=0,TA=150к) 2N2222A (VCB=60Vdc, IE=0) (VCB=60Vdc, IE=0,TA=150к) Emitter , =10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=1.0Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2222 (IC Semtech Electronics
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ST 2n2222 datasheet 2n2222a transistor 2N2222 transistor datasheet pin configuration transistor 2N2222A 2n2222 to92 power transistor 2n2222
Abstract: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 uA at VCB=60V ST 2N2222A ICBO - - 0.01 uA ST 2N2222 Philips Semiconductors
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MAM264 2N2222A 0612 2n2222 iv for transistor 2N2222 C2N2222A Metal 2n2222 operation of 2n2222 SCA54
Abstract: MCC 2N2222 2N2222A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 , CHARACTERISTICS ICBO IEBO hFE hFE Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB , =10Vdc) (IC=150mAdc, VCE=1.0Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2222 (IC=500mAdc, VCE -
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2N2222 application notes 2N2222 LEAD FREE
Abstract:  A â I 2N2222 PN 2222 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON , ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907» PN2907A RESPECTIVELY. THE 2N2222, 2N2222A , -18 jFL CASE TO-92A Q CBE 2N2222 . 2N2222Ã' EBC PN2222 PN2222A 2N2222 2N2222A PN2222 PN2222A , °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL 2N2222 PN2222 MIN MAX , .^. 3-41032J - - - Continued - - - PARAMETER SYMBOL 2N2222 PN2222 MIN MAX 2N2222A PN2222A MIN MAX UNIT Semtech Electronics
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NPN transistor 2n2222A plastic package of 2N2222A transistor 2n2222A plastic package 2n2222 npn switching transistor
Abstract: 2N2222 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Maximum Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage , OFF CHARACTERISTICS ICBO IEBO hFE hFE Collector cut-off current 2N2222 (VCB=50Vdc, IE , =10Vdc) (IC=150mAdc, VCE=1.0Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2222 (IC=500mAdc, VCE Micro Commercial Components
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J 2N2222A ns 2n2222a npn 2n2222 V2N2222 2N2222 datasheet 2N2222A Data Sheet
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