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npn bjt 2N2222

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Abstract: NPN Figure 11: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 , the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below , PURPOSE." * Models accurate up to 2 times rated drain current. * .model 2N7637 NPN + IS 9.8338E-48 + GeneSiC Semiconductor
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2n2222 spice model 2N7637-GA 12-DEC-2014 0733E-26 73E-10 86E-10
Abstract: NPN Figure 11: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 , the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below , NPN + IS 9.8338E-48 + ISE 1.0733E-26 + EG 3.23 + BF 130 + BR 0.55 + IKF 200 + NF 1 + NE GeneSiC Semiconductor
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2N7638-GA 2N7638 90E-2
Abstract: devices NPN PNP 2N2857 2N4957 MRF904 MM4049 MRF571 MRF521 For package shape, size and pin-connection Toshiba
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philips ecg master replacement guide Diode Equivalent 1N34A RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v UG-59A UG-1214 UG-60A UG-1215 UG-560 UG-496
Abstract: inverted 0/5V TTL o/p G RG S NPN Figure 15: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN , value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN , PURPOSE." * Models accurate up to 2 times rated drain current. * .model 2N7636 NPN + IS 9.8338E-48 + GeneSiC Semiconductor
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2N7636-GA 37E-10 97E-10 50E-02
Abstract: of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may , ,steady 0/5V TTL i/p inverted 0/5V TTL o/p G RG S NPN Figure 22: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 200 http://www.genesicsemi.com GeneSiC Semiconductor
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GA50JT06-258 GA50JT06 00E-47 26E-26 3989E-9
Abstract: NPN Figure 18: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 , datasheet, a partial list of high-temperature PNP and NPN transistors options is given below , PURPOSE." * Models accurate up to 2 times rated drain current. * .model 2N7640 NPN + IS 9.8338E-48 + GeneSiC Semiconductor
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2N7640-GA 2281E-10 33957E-9 20E-03
Abstract: inverted 0/5V TTL o/p G RG S NPN Figure 15: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN , value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN , NPN + IS 9.8338E-48 + ISE 1.0733E-26 + EG 3.23 + BF 130 + BR 0.55 + IKF 200 + NF 1 + NE GeneSiC Semiconductor
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2N7635-GA 2N7635
Abstract: BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 200 http , of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may , Signal D IG,steady 0/5V TTL i/p inverted 0/5V TTL o/p G RG S NPN Figure 22 , . * .model GA05JT01 NPN + IS 9.8338E-48 + ISE 1.0733E-26 + EG 3.23 + BF 135 + BR 0.55 + IKF 200 GeneSiC Semiconductor
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GA05JT01-46 GA05JT0146 16E-10 021E-10 050E-2
Abstract: G RG S NPN Figure 19: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 , from the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given , -GA NPN + IS 9.8338E-48 + ISE 1.0733E-26 + EG 3.23 + BF 110 + BR 0.55 + IKF 200 + NF 1.02 + GeneSiC Semiconductor
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2N7639-GA
Abstract: 0/5V TTL i/p inverted 0/5V TTL o/p G RG S NPN Figure 22: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 Dec 2014 Type PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 200 http://www.genesicsemi.com , high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may also be used in the GeneSiC Semiconductor
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GA05JT03-46 GA05JT0346 GA05JT03
Abstract: pnp-chopper 35V 150mA npn 20V 2.5A low sat switch 2N2222 2N5086 2N5087 10-14GHz schottky mixer pair 2N4403 , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor , SC70 SC59 SOT89 EMT3 SC70 SC59 Leaded Equivalent/Data Npn RF fT 7GHz PAD-5 5pA leakage diode pnp dtr -
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 smd transistor A6a a4s smd transistor BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
Abstract: example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , modamp mosfet n-ch npn o/p p-ch pin pkg pnp prot res s ser Si substr sw Vce Vcc junction field effect , an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor , SOT323 Leaded Equivalent/Data Npn RF fT 7GHz PAD-5 5pA leakage diode pnp dtr 4k7+4k7 pnp dtr 4k7+4k7 DC-8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn -
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAV105 LL4148 LL4448 BB241 BB249 LL914
Abstract: 2N5087 pnp-chopper 24V 150mA pnp-chopper 35V 150mA npn 20V 2.5A low sat switch 2N2222 2N5086 2N5087 , specified, these will be limiting values. For example, a device specified as NPN 20V 0.1A 1W is a NPN , SOT143 SOT89 SOT323 SOT23 SOT89 SOT89 SOT323 SOT23 Leaded Equivalent/Data Npn RF fT 7GHz PAD-5 5pA , diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn sw + 10k base res DC-8GHz MMIC amp 16dB gain npn 4k7+4k7 bias res npn 4k7+4k7 bias res DC-3GHz MMIC amp 22dB gain pnp RF MRF521 DC-4GHz MMIC SMD Code Book
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hp2835 diode T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 NDS358N mmbf4932 LL4150 BB219 LL300 BA682 BA683 BA423L
Abstract: different battery generation architectures are supported: a BJT/inductor design offering a low-cost , , the efficiency is assumed to be 60% for the BJT/inductor solution (the actual efficiency is between , down prematurely. Solution The typical circuit application for the BJT/inductor version of the , selection process. Component Selection for BJT/Inductor +VDC Fuse DCMONH DCMONL R20 RMONL , before any conclusion is made about the input power source. Q9 can be any NPN low voltage (12 V or Silicon Laboratories
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BJT 2222 Si321x BJT 2N2222 datasheet bjt 2n2222 driver circuit w34 transistor IRLL014N equivalent
Abstract: supplies. Two different battery generation architectures are supported: a BJT/inductor design offering a , the switching loss. For worst-case estimation, the efficiency is assumed to be 60% for the BJT , . Rev. 0.61 3 AN45 1.4. Component Selection for BJT/Inductor Solution The typical circuit application for the BJT/inductor version of the Si321x dc-dc converter is shown in Figure 2. Components in , , consequentially, triggers the Si321x to end its current PWM cycle. Q9 can be any NPN low voltage (12 V or higher Silicon Laboratories
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bjt 2n2222 SDCL transistor BJT 2N2222 W6 13A Diode IRLL014N SMALL low frequency transformer
Abstract: scheme. The output stage requires only a 2N2222-type small-signal BJT for fans up to 300mA. For larger , . This output has an asymmetric complementary drive and is optimized for driving NPN transistors or Microchip Technology
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TC651 TC650 TC650AEVUA TC651BEVUA b0541 marking code 41 BF TO92 TC650/TC651 AN771 TC650XXVUA TC651XXVUA
Abstract: low cost transistor or MOSFET as the low side power switching element in the system. A 2N2222 type, small signal (BJT) can be used for fans up to 300 mA. For larger current fans (up to 1 amp), a , drive device can also be an NPN transistor, depending on cost constraints and fan current. R1 1 k Microchip Technology
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TC652 2N2222 MPS2222 npn transistor fan control schematics 2N2222A bjt TL 2N2222A npn transistor TEMPERATURE CONTROL IC 4570 2N2222 MPS2222 DS21506B 11F-3 DK-2750 D-85737 DS21506B-
Abstract: only a 2N2222-type small-signal BJT for fans up to 300mA. For larger current fans (up to 1 Amp) a , NPN transistors or N-channel MOSFETs. Since the system relies on PWM rather than linear power Microchip Technology
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TC653 B3541 TC652AEVUA TC653BEVUA tl 701 amp diagram TC652/TC653 TC652XXVUA TC653XXVUA D-81739 B35412SD
Abstract: in the system. A 2N2222 type small signal (BJT) can be used for fans up to 300 mA. For larger , an NPN transistor, depending on cost constraints and fan current. R1 1 k, 1206 chip resistor Microchip Technology
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circuits using BJT 2N2222 Si2302 SI2302 A2 2N2222 NPN Transistor features IR Fan control IC TC65X DS51304A DS51304A-
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