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negative ion generator

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Abstract: question or inquiry on this matter, please contact our sales staff. 1 3 CYLINDER TYPE LITHIUM ION CAPACITOR FEATURES Lithium Ion Capacitor (LIC) is one of the Hybrid Capacitors to which the reaction of , solar cell, fuel cell, generator, and so on. Main power source for small devices (machine tools , Dimensions/ L [mm] 35 35 40 40 R 3 R 3R8 8 3.8 2 0 7 Type Lithium Ion , ), see our Web site (http://www.ty-top.com/) . 1 3 CYLINDER TYPE LITHIUM ION CAPACITOR ... Original
datasheet

6 pages,
240.56 Kb

negative ion generator "Lithium Ion Capacitor" datasheet abstract
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Abstract: ge .jp rm . /en at ion / . M Di ain sc te on na tin nc ue e/ d The MN195902 MN195902 is a , cosine transform (DCT) converter · Two-dimensional address generator Architecture that links internal , life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . ue , cle ic. t in sta co fo ge .jp rm . /en at ion / . M Di ain sc te on na tin nc ue e , /en at ion / . SAG DM 1Kwd MPY REG DCT SIO SIO FLT PIO PIO ue ... Original
datasheet

8 pages,
183.79 Kb

XCS TE GE ST2 MN195902 MN195902 abstract
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Abstract: -in in de for x. ma ht t m ion l . M Di ain sc te on na tin nc ue e/ d Features Flexible support , Two-dimensional address generator Architecture that links internal memory, a generalpurpose arithmetic unit , st -in in de for x. ma ht t m ion l . 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 , / es e- t i in nf de or x. ma ht t m ion l . ADD REG SFT Internal memory Internal memory SFT REG ADD , CTL IRAM 2Kwd SAG BM1 BM2 DM IRAM, IROM FREG0 to 15 EALU Two-dimensional address generator ... Original
datasheet

8 pages,
184.56 Kb

MN195902 MN195902 abstract
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Abstract: AC AES AFM AQL ATPG BEM Alternating Current Auger Electron Spectroscopy Atomic Force Microscope Acceptable Quality Level Automatic Test Pattern Generator Breakdown Energy of Metal BPSG , Electron Spin Resonance Focused Ion Beam Field Induced Model Failure Mode and Effects Analysis Fault , Negative Bias Temperature Instability OBIC Optical Beam Induced Current OBIRCH Optical Beam Induced , Backscattering Spectrometry SEM Scanning Electron Microscope SIMS Secondary Ion Mass Spectroscopy SIP ... Original
datasheet

3 pages,
529.23 Kb

SEM 2005 SMD BDJ0128B ic SEM 2005 SMD failure analysis IGBT CCD MTBF IC SEM 2005 datasheet abstract
datasheet frame
Abstract: Negative Swing Audio Capability January 2010 FSA2270 FSA2270 / FSA2270TS FSA2270TS - Low-Voltage, Dual-SPDT (0.4) Analog Switch with Negative Swing Audio Capability 1A 3 S1 4 1B0 1B1 Vcc 2 1 5 , Low-Voltage, Dual-SPDT (0.4) Analog Switch with Negative Swing Audio Capability 25ºC, VCC = 3.3V , µA IIN ION=100mA, nB0nB1=0.7V, 3.6V, 4.3V 3 (3) 3.00 0.40 ION=100mA, nB0 nB1=0V , 0.12 1.65 RON ION=100mA, nB0 nB1=0.7V, 3.6V, 4.3V 3 4.30 (2,5) 0.30 ION ... Original
datasheet

10 pages,
683.2 Kb

JESD22-A114 JESD22-A101 JEDEC-JESD-C101 FSA2270TUMX FSA2270TS FSA2270T FSA2270 FSA2270T abstract
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Abstract: Low-Voltage, Dual-SPDT (0.4) Analog Switch with Negative Swing Audio Capability January 2010 1B0 1A , 10 VCC FSA2271T FSA2271T - Low-Voltage, Dual-SPDT (0.4) Analog Switch with Negative Swing Audio , ) Analog Switch with Negative Swing Audio Capability www.fairchildsemi.com 3 25ºC, VCC = 3.3V. , IOFF (1A, 2A) (1A, 2A), VIN=0V 4.3V, VCC=0V nB0, nB1=0V ±45 µA 0 ION=100mA, nB0 nB1=0.7V,3.6V, 4.3V 3 RON RTERM 0.4 ION=100mA, nB0 nB1=0V,0.7V, 1.6V, 2.3V 3 ... Original
datasheet

9 pages,
716.21 Kb

JESD22-A114 JESD22-A101 FSA2271TUMX FSA2271T FSA2271T abstract
datasheet frame
Abstract: te /e st -in in de for x. ma ht t m ion l . VO1C VDD1 VINC2 VGC2 VSS1 10 VO2Y M Di ain sc te on , Charge input block 79-stage analog shift register L Voltage generator H VINC1 4 L 3-stage analog shift , Clamp circuit Mode switch Booster circuit Voltage generator 12 3 2 9 7 VGC2 , ­V de for x. ma ht t m ion l . L Waveform adjustment block VO2Y ø1 driver øR driver øSH driver VCO Timing adjustment L H VSS ø2 driver Substrate bias generator 19 BB CCD ... Original
datasheet

6 pages,
379.74 Kb

MN38662S MN38662S abstract
datasheet frame
Abstract: CAP2 CAP1 12 11 Negative and positive boosting voltage generator HD CC1 DD OVEE Pl M Di ain , C13 ht t generator mC14 ion C15 l . M Di ain sc te on na tin nc ue e/ d + to CCD's source , win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . C1­ C2­ , 38 CH2 SENSE2 VOUT­ VIN ­ 39 40 41 42 Negative regulated voltage output GND 2 , o. L C5 ­ jp a 7 /s bo C6 ­ em u 9 C6+ ic t la on te 8 V /e st 10 -in in OV de for x. ma ht t m ion l ... Original
datasheet

14 pages,
548.15 Kb

MN3113F MN3113F abstract
datasheet frame
Abstract: st -in in de for x. ma ht t m ion l . VO1C VDD1 VINC2 VGC2 VSS1 10 VO2Y M Di ain sc te on na tin , for x. ma ht t m ion l . Charge input block analog shift register M Di ain sc te on na tin nc ue e/ d Bias circuit Mode switch VINVC 6 L 78.5-stage L Voltage generator H H Charge input block analog shift register Clamp circuit Booster circuit Voltage generator H 12 8 VO1C 11 VO2Y 鳶 driver 鳵 driver 鳶H driver Substrate bias generator 3 2 9 4 3-stage 602-stage ... Original
datasheet

8 pages,
415.08 Kb

MN38663S MN38663S abstract
datasheet frame
Abstract: FAIRCHILD LINEAR INTEGRATED CIRCUITS* 101A• 201A • 301A TYPICAL APPLICATIONS (Cont'd) (All pin numbers shown refer to 8-lead TO-5 package) LOW FREQUENCY SQUARE WAVE GENERATOR LOW IMPEDANCE OUTPUT *Adju*t Cj for fraquancy DOUBLE ENDED LIMIT DETECTOR "OUT - «.«V FOR VL< V,„ ... OCR Scan
datasheet

1 pages,
26.34 Kb

Pulse Width Modulator negative ion generator datasheet abstract
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and viruses Negative Ion generator This unit will
www.datasheetarchive.com/files/maplin/products/29/5/02prodd.htm
Maplin 28/02/2002 5.37 Kb HTM 02prodd.htm
large quantities of both positive and negative ions, usually air or nitrogen molecules. These ions are directed in areas where electrostatically charged objects require neutralization. The ion of charged insulator. Ion generation is usually accomplished using either a high-voltage emitter system One material will acquire a positive charge and the other material will acquire a negative duplicated by a single chip of silicon. Also known as an "IC". Ion A charged particle
www.datasheetarchive.com/files/national/htm/nsc01090.htm
National 02/07/2001 68.61 Kb HTM nsc01090.htm
large quantities of both positive and negative ions, usually air or nitrogen molecules. These ions are directed in areas where electrostatically charged objects require neutralization. The ion of charged insulator. Ion generation is usually accomplished using either a high-voltage emitter system them. One material will acquire a positive charge and the other material will acquire a negative duplicated by a single chip of silicon. Also known as an "IC". Ion A charged particle
www.datasheetarchive.com/files/national/htm/nsc01093-v3.htm
National 16/08/2002 73.25 Kb HTM nsc01093-v3.htm
large quantities of both positive and negative ions, usually air or nitrogen molecules. These ions are directed in areas where electrostatically charged objects require neutralization. The ion of charged insulator. Ion generation is usually accomplished using either a high-voltage emitter system One material will acquire a positive charge and the other material will acquire a negative duplicated by a single chip of silicon. Also known as an "IC". Ion A charged particle
www.datasheetarchive.com/files/national/htm/nsc00762-v2.htm
National 14/09/2000 70.07 Kb HTM nsc00762-v2.htm
RESISTORS FULL-WAVE RESONANT DC-DC CON - VERTER USING SINGLE COIL FOR DUAL HIGH VOLTAGE GENERATOR WITH Enable (see Tab. 1). 2 GND-P Power ground. 3 COIL Coil for positive step UP and capacitor for negative voltage for HVP regulator. 22 RC comp DC-DC converter compensation network. 23 HVM Negative High voltage OpAmp Negative power supply rejection ratio @ 50kHz not tested in production -50 dB C load OpAmp high voltage referred to HVM 75 V HVM Negative high voltage referred to Ground -38 V IN A&B Amplifier
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7293.htm
STMicroelectronics 20/10/2000 18.52 Kb HTM 7293.htm
USING SINGLE COIL FOR DUAL HIGH VOLTAGE GENERATOR WITH OUT - PUT SLEW RATE CONTROL AND SELF capacitor for negative charge. 4 AorB MUX command Aor B input selection (0 = A; 1 = B). 5 OUT1-A Output converter compensation network. 23 HVM Negative High voltage generated op. amp. supply. 24 HVP Positive supply rejection ratio @ 50kHz not tested in production -50 dB PSRR,N OpAmp Negative power supply referred to HVM 75 V HVM Negative high voltage referred to Ground -38 V IN A&B Amplifier input voltage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7293-v1.htm
STMicroelectronics 09/01/2001 17.76 Kb HTM 7293-v1.htm
voltage, please refer to the paragraph "ESD PROTECT ION" on pages 4 & 5 Symbol Parameter V BR EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 is not only acting for positive ESD surges but also for negative ones. For these kind of stages S1 (Vin) and S2 (Vout) during ESD surge a) Positive surge b) Negative surge Fig A6 : Rd Pulse Generator 5KHz Fig A9 : Digital crosstalk results EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 6/10 3- Analog -20 -10 0 t(ns) (V) Vin Vout b) Negative surge Fig A15: Comparison between PSpice
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6650.htm
STMicroelectronics 20/10/2000 12.6 Kb HTM 6650.htm
residual voltage, please refer to the paragraph "ESD PROTECT ION" on pages 4 & 5 Symbol Parameter V also for negative ones. For these kind of disturbances it clamps close to ground voltage as shown ) Positive surge b) Negative surge Fig A6 : Rd measurement current wave 2.5 ms 2 ms t t I I Pulse Generator 5KHz Fig A9 : Digital crosstalk results EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 EMIF01-10005W5 6/10 3- Analog ) Negative surge Fig A15: Comparison between PSpice simulation and measured frequency response 1 10
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6650-v1.htm
STMicroelectronics 01/02/2001 12.01 Kb HTM 6650-v1.htm
ESD residual voltage, please refer to the paragraph "ESD PROTECT ION" on pages 4 & 5 Symbol Parameter negative ones. For these kind of disturbances it clamps close to ground voltage as shown in Fig. A5b. NOTE voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge a) Positive surge b) Negative surge Fig A6 G1 b 21 V G1 +5V +5V 74HC04 74HC04 74HC04 74HC04 74HC04 74HC04 74HC04 74HC04 +5V Square Pulse Generator 5KHz Fig A9 : Digital crosstalk ) Positive surge 0 20 40 60 80 100 -60 -50 -40 -30 -20 -10 0 t(ns) (V) Vin Vout b) Negative surge Fig A15
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6650-v2.htm
STMicroelectronics 14/06/1999 10.27 Kb HTM 6650-v2.htm
of the input voltage pulse applied to the output sect ion. March 1998 AN1007 AN1007 AN1007 AN1007 APPLICATION NOTE L6561 L6561 L6561 L6561 - controlled current generator that resets th e mag amp core through the auxiliary winding wound on it. The dynamic response of the regulator. This has a negative impa ct also on the design of the main transformer , with the aid of the time diagrams shown in fig. 6 . Q1 is turned on on the negative edge of the secon - counterpart: the dissipat ion on the MOS - FET is quite limited (about 1W with the parts suggested in Tab.1
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5657-v1.htm
STMicroelectronics 02/04/1999 14.67 Kb HTM 5657-v1.htm