NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Electrical Characteristics at T/\ = 25°C For Each p-Channel MOS Transistor Gate-to-Source Voltage , Transistor-continued Arrays COS/MOS Transistor Array-For Linear Circuit Applications ca36oo -© PI.NI (PAIR Noll Terminal Channel Pair No. 1. Drain P 2 2. Source P 2 3. Common Gate 2 4. Source n 2 6. Drain n 2 6. Common Gate 1 7. Source and n 1 »beträte connection for all »â- channel , ). OV (min.),+VD (max) COS/MOS transistor pairs (P1 -ni, P2"n2- P3"n3' .OV (min.),+Vqq ... | OCR Scan |
1 pages, |
TRANSISTOR N3 TRANSISTOR N2 mos transistor differential pair transistor CA3600 n-channel mos or gate datasheet abstract |
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| Abstract: MOS FIELD EFFECT TRANSISTOR 3SK133A 3SK133A RF AMP. FOR UHF TV TUNER N CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS r 'M . ~ 1 = FEATURES • Suitable for use « RF , >on 200 mW Channel Temperature T* 150 ♦c Storage Temperature T»t« -65 to+150 •c *AL2l0kn CHARACKMrSTlC svMaoi Ml N TV* MAX UNIT TIST :ONOITIONS fc»« io Sovra B/«efcdan*< Vo»tegt «vosx 20 V VGIS*vG2S , MAXIMUM RATINGS (Ta-25 IUCTRICAL CHARACTERISTICS (Tj-25 *C> Ore*t to Source Voltage VOSX 20 V Gjtel to ... | OCR Scan |
1 pages, |
3SK133A TV-Tuner 3SK133 uhf tv power transistor TRANSISTOR IFW 3SK133A abstract |
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| Abstract: 30E D 7121337 003013b t. TW) Eri SGS-THOMSON m G S-TH0MS0N IRF720 IRF720 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIESiZE: 110x110 mils METALLIZATION: Top AI Back • Au/Cr/Ni/Au BACKSIDE , RDS (on) i * â- d 400 V 1.8 n 3.3 A N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die , lD= 250 /¡A VGS= 0 T-39 1 400 1 ~ V Iqss Zero gate voltage drain current VDS= Max Rating VDS= Max ... | OCR Scan |
2 pages, |
IRF720 IRF720 abstract |
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| Abstract: 3DE J> â- 71ST537 71ST537 GG3Ãœ13fi T â- SCS-THOMSON s 6 s-THOMSON - [j^lD(g^(Q)[i[Lll©ir[E(ö)iD(gi_IRF730 IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x 156 mils , mils Gate AI - max 7 mils SCHEMATIC DIAGRAM GO- VDSS RdS (on) 1 * 'd 400 V 1 n 5.5 A N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry MC-0072 MC-0072 â- SOURCE â- GATE Drain on ... | OCR Scan |
2 pages, |
71ST537 IRF730 71ST537 abstract |
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| Abstract: 30E ]>_â- _ TW 23? 003D12Q 003D12Q 2 â- T^S^-lf rrz SGS-THOMSON s fi S-THOMSON ' _BUZ11A BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back Au/Cr , mils SCHEMATIC DIAGRAM Voss Rds (on) Id* 50 V 0.06 Q 25 A N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high , v(br) dss Drain-source breakdown voltage lD = 250 ixA VGS = O 50 V y T- -5Q n lDSS Zero gate ... | OCR Scan |
2 pages, |
BUZ11A 003D12Q 003D12Q abstract |
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| Abstract: 30E D H 7T2T_237 DO 3D 12b 3 SGS-THOMSON s G S-THOHSON KLd©TT^(s)IMO©S BUZ71 BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 95x95 mils METALLIZATION: Top Al Back Au/Cr/Ni , POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal , Unit V(BR) dss Drain-source breakdown voltage lD = 250 nA VGS= 0 s T ? 50 9-n - V 'dss Zero , Rth} ... | OCR Scan |
2 pages, |
BUZ71 BUZ71 abstract |
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| Abstract: 3QE » 7=12^237 Q03Q12M Q03Q12M T â- ^p^q^ SGS-THOMSON S G S-THOMSON BUZ32 BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back Au/Cr/Ni/Au , SCHEMATIC DIAGRAM GO vdss RDS (on) â- * â- d 200 V 0.4 n 9.5 A N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed , ) dss Drain-source breakdown voltage lD= 250 fiA VGS= 0 _ T-39 _2°°J_ -11 V lDSS Zero gate voltage ... | OCR Scan |
2 pages, |
T-39 BUZ32 Q03Q12M Q03Q12M abstract |
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| Abstract: 3DE J> â- 71ST537 71ST537 GG3Ãœ13fi T â- rZ7 SCS-THOMSON s 6 s-THOMSON - [j^lD(g^(Q)[i[Lll©ir[E(ö)iD(gi_IRF730 IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils , 10 mils Gate Al - max 7 mils SCHEMATIC DIAGRAM GO- vdss Rds (on) 1 * 'd 400 V 1 n 5.5 A N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry MC-0072 MC-0072 â- SOURCE â- GATE ... | OCR Scan |
2 pages, |
transistor IRF730 IRF730 71ST537 71ST537 abstract |
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| Abstract: CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils , enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry With R^ max. 3.12-C/W 12-C/W June 1988 1/2 , breakdown voltage iD = 250 nA VGS= 0 200 n V 'dss Zero gate voltage drain current T-39- Vqs = Max Rating , resistance VGS=10V lD = 1A 0.8 n NOTES: 1 - Due to probe testing limitations dc parameters only are ... | OCR Scan |
2 pages, |
mos die IRF620 0D3Q13H 0D3Q13H abstract |
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| Abstract: FIELD EFFECT TRANSISTOR 2SK1717 2SK1717 SILICON N CHANNEL MOS TYPE (L2 - 7T - MOS IV) ELECTRICAL , SEMICONDUCTOR TECHNICAL DATA TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SK1717 2SK1717 SILICON N CHANNEL MOS TYPE (L2 - 7T - MOS IV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC , * J SoflT V|N:tr, t, , ) MAXIMUM RATINGS (Ta = 25 °C) PD* : mounted on cermic substrate (600 mm2x0.8 t) INDUSTRIAL APPLICATIONS ... | OCR Scan |
2 pages, |
2SK1717 6 volt ldr 2SK1717 abstract |
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| PHP18NQ10T - N-channel TrenchMOS(tm) transistor PHP18NQ20T - N-channel TrenchMOS(tm) transistor PHP20NQ20T - N-channel TrenchMOS(tm) transistor PHP23NQ10T - N-channel TrenchMOS(tm) transistor PHP27NQ10T - N-channel TrenchMOS(tm) transistor PHP34NQ10T - N-channel TrenchMOS(tm) transistor PHP45NQ10T - N-channel TrenchMOS(tm) transistor PHP9NQ20T - N-channel TrenchMOS(TM) transistor PHX14NQ20T - N-channel TrenchMOS www.datasheetarchive.com/files/philips/catalog/listing/31682.html |
Philips | 17/02/2002 | 4.85 Kb | HTML | 31682.html |
| - TrenchMOS(tm) transistor Logic level FET PHB20N06T - N-channel TrenchMOS TM transistor PHB21N06LT - N-channel TrenchMOS (tm) transistor Logic level FET PHB73N06T - N-channel level FET PHD20N06T - N-channel TrenchMOS TM transistor PHD21N06LT - N-channel 06T - N-channel enhancement mode field-effect transistor PHT11N06LT - TrenchMOS mode field-effect transistor BSH120T - N-channel enhancement mode field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/41381-v1.html |
Philips | 17/02/2002 | 12.36 Kb | HTML | 41381-v1.html |
| PHB112N06T - N-channel enhancement mode field-effect transistor PHB11N06LT - N-channel TrenchMOS(tm) transistor Logic level FET PHB20N06T - N-channel TrenchMOS(tm) transistor PHD20N06T - N-channel TrenchMOS(tm) transistor PHP20N06T - N-channel TrenchMOS(tm) transistor www.datasheetarchive.com/files/philips/catalog/listing/41381.html |
Philips | 25/04/2003 | 14.09 Kb | HTML | 41381.html |
| THRESHOLD POWER MOS TRANSISTOR 8 428 Datasheets STD2NA50-1 STD2NA50-1 STD2NA50-1 STD2NA50-1 STD2NA50T4 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR 9 657 Datasheets STD4N25-1 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 9 657 Datasheets STD4NB40 STD4NB40 STD4NB40 STD4NB40 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS 9 542 Datasheets STD40NE03L STD40NE03L STD40NE03L STD40NE03L N-CHANNEL 30V 40FI N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS 9 485 Datasheets www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/238.htm |
STMicroelectronics | 31/03/1999 | 15.33 Kb | HTM | 238.htm |
| PHB12NQ15T - N-channel TrenchMOS(tm) transistor PHB18NQ10T - N-channel TrenchMOS(tm) transistor PHB18NQ20T - N-channel TrenchMOS(tm) transistor PHB20NQ20T - N-channel TrenchMOS(tm) transistor PHB23NQ10T - N-channel TrenchMOS(tm) transistor www.datasheetarchive.com/files/philips/catalog/listing/41382.html |
Philips | 25/04/2003 | 42.59 Kb | HTML | 41382.html |
| effect transistor PHB12NQ15T - N-channel TrenchMOS Ã" transistor PHB14NQ20T - TrenchMOS Ã" transistor PHB18NQ10T - N-channel TrenchMOS Ã" transistor PHB18NQ20T - N-channel TrenchMOS Ã" transistor PHB20NQ20T - N-channel TrenchMOS Ã" transistor PHB23NQ10T - N-channel TrenchMOS Ã" transistor PHB23NQ15T - N-channel TrenchMOS Ã" transistor PHB27NQ10T - N-channel TrenchMOS Ã" TrenchMOS Ã" transistor PHB45NQ10T - N-channel TrenchMOS Ã" transistor PHB47NQ10T - N-channel www.datasheetarchive.com/files/philips/catalog/219/282/27046/30928/30689/41368/41382/index.htm |
Philips | 17/02/2002 | 228.94 Kb | HTM | index.htm |
| Datasheets STD2NA50-1 STD2NA50-1 STD2NA50-1 STD2NA50-1 STD2NA50T4 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 8 555 ENHANCEMENT MODE POWER MOS TRANSISTORS 9 851 Datasheets STD4NA40-1 STD4NA40-1 STD4NA40-1 STD4NA40-1 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR 9 851 Datasheets STD4NB40 STD4NB40 STD4NB40 STD4NB40 N-CHANNEL 06L N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS 9 555 Datasheets STD17N05L STD17N06L N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/231.htm |
STMicroelectronics | 31/03/1999 | 15.29 Kb | HTM | 231.htm |
| IRFR220 IRFR220 IRFR220 IRFR220 - N-channel enhancement mode field effect transistor PHB12NQ15T - N-channel TrenchMOS(tm) transistor PHB14NQ20T - TrenchMOS (tm) transistor PHB18NQ10T - N-channel TrenchMOS(tm) transistor PHB18NQ20T - N-channel TrenchMOS(tm) transistor PHB18NQ20T - N-channel TrenchMOS(tm) transistor PHB20NQ20T - N-channel TrenchMOS(tm) transistor PHB23NQ10T - N-channel TrenchMOS(tm) transistor PHB23NQ15T - N-channel TrenchMOS(tm) transistor www.datasheetarchive.com/files/philips/catalog/listing/41382-v1.html |
Philips | 17/02/2002 | 30.57 Kb | HTML | 41382-v1.html |
| ENHANCEMENT MODE POWER MOS TRANSISTOR 8 771 Datasheets STD2NA60 STD2NA60 STD2NA60 STD2NA60 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 9 657 Datasheets STD2N50-1 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 9 657 Datasheets STD2NB60 STD2NB60 STD2NB60 STD2NB60 N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR 8 600 Datasheets STP2NA50 STP2NA50 STP2NA50 STP2NA50 STP2NA50FI STP2NA50FI STP2NA50FI STP2NA50FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 8 542 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/245.htm |
STMicroelectronics | 31/03/1999 | 15.26 Kb | HTM | 245.htm |
| PHB20N06T - N-channel TrenchMOS (tm) transistor PHD20N06T - N-channel TrenchMOS (tm) transistor PHP20N06T - N-channel TrenchMOS (tm) transistor PHB112N06T - N-channel enhancement mode field-effect transistor PHB11N06LT - N-channel TrenchMOS (tm) transistor Logic level FET www.datasheetarchive.com/files/philips/catalog/listing/41381-v2.html |
Philips | 01/06/2005 | 20.81 Kb | HTML | 41381-v2.html |