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ISL6615IRZ-T Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615IRZ Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615CRZ Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615CRZ-T Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
TPS28226DRBR Texas Instruments 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125 visit Texas Instruments
TPS28225DRBR Texas Instruments 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125 visit Texas Instruments

n mosfet depletion 1A sink

Catalog Datasheet MFG & Type PDF Document Tags

8205 A mosfet

Abstract: n mosfet depletion 1A sink eliminates these problems by using an internal depletion mode MOSFET as a pre-regulator to provide the , maximum peak current to 100mA (at 180VIN) and protects the part. The depletion mode MOSFET contains an , Drive Output D2 R2 GND D1 1:N Figure 10 The gate impedance of a MOSFET is capacitive and , % efficiency 1.3mA quiescent current 1A shutdown current Soft-start Resistor programmable current sense threshold Selectable soft-start retry 4 sink, 12 source output driver Programmable under-voltage lockout
Micrel Semiconductor
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MIC9130 MIC9131 8205 A mosfet n mosfet depletion 1A sink 8205 mosfet B330 FQD10N20 MBR0540 M9999-111108

8205 A mosfet

Abstract: ts 083 depletion mode MOSFET as a pre-regulator to provide the start-up bias voltage from the high voltage input , soft-start retry 4 sink, 12 source output driver Programmable under-voltage lockout Constant-frequency PWM , Typical Application MBR0540 40V/0.5A 12V 20 T1 N=5 1µF 16V VIN 36V to 72V 2.5µH 0.1µF 1M N = 20 N=4 Si4800DY B330 38.3k 20k 7 3 9 0.1µF EN VCC SYNC , ): Connect between external switching MOSFET source and switch current sense resistor. 15 PGND
Micrel Semiconductor
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ts 083 mosfet 400 amp 8205* MOSFET rectifier schematic MIC9130BM MIC9130BQS

8205 mosfet

Abstract: Gate Drive Current vs. VCC SINK Peak Short Circuit Depletion FET Current vs. Temperature 80 75 70 , using an internal depletion mode MOSFET as a pre-regulator to provide the start-up bias voltage from the , to 100mA (at 180VIN) and protects the part. The depletion mode MOSFET contains an internal parasitic , soft-start retry 4 sink, 12 source output driver Programmable under-voltage lockout Constant-frequency PWM , Typical Application MMBD4448 100V/200mA 12V 24.9 N = 6.5 CTX04-15299-X1 LPRIMARY = 100µH 1µF 16V
Micrel Semiconductor
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n mosfet depletion 1A sink

Abstract: zener diode 12v 0805 1.7 1.5 1.3 1.1 0.9 Gate Drive Current vs. VCC SINK Peak Short Circuit Depletion FET Current vs , over. The MIC9130 eliminates these problems by using an internal depletion mode MOSFET as a , protects the part. The depletion mode MOSFET contains an internal parasitic diode. The VIN pin voltage must , Soft-start Resistor programmable current sense threshold Selectable soft-start retry 4 sink, 12 source output , -Pin SOP 16-Pin QSOP Typical Application MBR0540 40V/0.5A 12V 20 N=5 T1 1µF 16V VIN 36V to
Micrel Semiconductor
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zener diode 12v 0805 DT 8210 IC

8205 A mosfet

Abstract: 8205* MOSFET over. The MIC9131 eliminates these problems by using an internal depletion mode MOSFET as a , maximum peak current to 100mA (at 180VIN) and protects the part. The depletion mode MOSFET contains an , programmable current sense threshold Selectable soft-start retry 4 sink, 12 source output driver , ISNS Current Sense (Input): Connect between external switching MOSFET source and switch current , external switching MOSFET. 2 July 2001 MIC9131 Micrel Absolute Maximum Ratings (Note 1
Micrel Semiconductor
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501 mosfet transistor 1N5818 B320A MIC9131BM MIC9131BQS Si4884DY

8205 mosfet

Abstract: DT 8210 IC °C VISNS = 5V 21 ns 8 12 SINK ; ISINK = 200mA 4 6 MOSFET Driver , by using an internal depletion mode MOSFET as a pre-regulator to provide the start-up bias voltage , protects the part. The depletion mode MOSFET contains an internal parasitic diode. The VIN pin voltage , Drive Output D2 R2 GND D1 1:N Figure 10 The gate impedance of a MOSFET is capacitive and , threshold Selectable soft-start retry 4 sink, 12 source output driver Programmable under-voltage lockout
Micrel Semiconductor
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Amp. mosfet 1000 watt p 818 opto P-Channel Depletion Mosfets single phase transformer design 947K DT 8210 M9999-040805

180VIN

Abstract: winding takes over. The MIC9131 eliminates these problems by using an internal depletion mode MOSFET as a , part. The depletion mode MOSFET contains an internal parasitic diode. The VIN pin voltage must be , sink, 12 source output driver Programmable under-voltage lockout Constant-frequency PWM current-mode , (Input): Connect between external switching MOSFET source and switch current sense resistor. Power Ground (Return) Switch Drive Output (Output): Connect to gate of external switching MOSFET. 9 10 11 12 13
Micrel Semiconductor
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Abstract: Gate Drive Current vs. VCC SINK Peak Short Circuit Depletion FET Current vs. Temperature 80 75 70 , eliminates these problems by using an internal depletion mode MOSFET as a pre-regulator to provide the , transformer to reset properly. C1 T1 Gate Drive Output GND 1:N R1 D2 R2 D1 C1 AGND Figure 7 MOSFET Gate , /200mA 12V 24.9 N = 6.5 CTX04-15299-X1 LPRIMARY = 100µH 1µF 16V VIN 36V to 72V 1M N = 3.25 0.1µF N=1 Si4884DY B330 38.3k 13 1 2 10 2.1µH VOUT 3.3V @ 5A 330µF (x2) UVLO LINE VCC Micrel Semiconductor
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Abstract: eliminates these problems by using an internal depletion mode MOSFET as a pre-regulator to provide the , maximum peak current to 100mA (at 180VIN) and protects the part. The depletion mode MOSFET contains an , T1 R1 D2 R2 D1 1:N Figure 10 The gate impedance of a MOSFET is capacitive and the power , soft-start retry 4 sink, 12 source output driver Programmable under-voltage lockout Constant-frequency PWM , . Current Sense (Input): Connect between external switching MOSFET source and switch current sense resistor Micrel Semiconductor
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Abstract: winding takes over. The MIC9131 eliminates these problems by using an internal depletion mode MOSFET as a , protects the part. The depletion mode MOSFET contains an internal parasitic diode. The VIN pin voltage must , . Current Sense (Input): Connect between external switching MOSFET source and switch current sense resistor. Power Ground (Return) Switch Drive Output (Output): Connect to gate of external switching MOSFET. 9 , Unity Gain Bandwidth PSRR COMP Sink Current COMP Source Current VCOMP Low VCOMP High Input Bias Current Micrel Semiconductor
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single phase transformer design

Abstract: DT 8210 IC 12 SINK ; ISINK = 200mA 4 6 MOSFET Driver Output Minimum On-Time Output Driver , eliminates these problems by using an internal depletion mode MOSFET as a pre-regulator to provide the , maximum peak current to 100mA (at 180VIN) and protects the part. The depletion mode MOSFET contains an , Resistor programmable current sense threshold Selectable soft-start retry 4 sink, 12 source output driver , Sense (Input): Connect between external switching MOSFET source and switch current sense resistor
Micrel Semiconductor
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TRANSFORMER 9V 500 ma B320A-7 M9999-080206

P-Channel Depletion Mode FET

Abstract: 5155 transistor integrated circuit. The dielectric U SH 5156 N-channel depletion mode DMOS FET NPN bipolar transitor , The test circuit for the Kit Parts is shown in Figure 1A. The test pulse w idth is 300us, 10% duty , 100 0.9 2 100 80 UNITS V nA V = 1uA, Vgs = Vds = 1mA, Vgs = Vds = 5V, ID = 1A = 10V, ID = 10mA , designed for values from 3mA to 1A. This transistor can be used in a HIVIC in the same fashion that a , * *T h e intrinsic s w itc h sp e ed o f th e tra n s is to r is a p p ro x im a te ly 1 0 0 n s
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OCR Scan
P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V HV Diode dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A USH5155 USH5156

UCC3581

Abstract: UDG-95011-1 Cycle with Cycle Skipping Programmable Maximum Duty Cycle Output Current 1A Peak Source and Sink , n t. ±1A Analog Inputs EN , controllers. A linear preregulator driver in conjunction with an external depletion mode N-MOSFET provides , Dissipation at T d = 25°C (N, J, Q, L Package). , packages. CONNECTION DIAGRAMS DIL-14, SOIC-14 (Top View) N o r J, D Packages W CT |T G T [2 VD D OUT Î
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OCR Scan
UCC3581 UDG-95011-1 44TURNS UCC1581 UCC2581 H/1000T
Abstract: Current 1A Peak Source and Sink Programmable Soft Start Programmable Oscillator Frequency External , y UCCI 581 UCC2581 UCC3581 PRELIMINARY U N IT R O D E Micropower Voltage Mode PWM , external depletion mode N-MOSFET provides initial controller power. Once the bootstrap supply is , . ±1A Analog Inputs EN. -0.3V to (VDD + 0.3V , °C (N, J, Q, L Package). 1W (D Package -
OCR Scan
Abstract: c irc u it. The dielectric USH5156 N-channel depletion mode DMOS FET NPN bipolar tra n sito r , Parts is show n in Figure 1A. The te s t pulse w id th is 3 0 0 u s, 10% d u ty cycle. The correspond , can be designed fo r values fro m 3mA to 1A. This tra n sisto r can be used in a HIVIC in th e same , in excess o f th e depletion mode d e vice's p in ch -o ff voltage, tu rn in g th a t tra n sisto r o , tra n sisto r cas caded w ith a high voltage depletion m ode P-channel transis tor. The merged device -
OCR Scan

optocoupler a 3131

Abstract: optocoupler 3131 Cycle · Output Current 1A Peak Source and Sink · Programmable Soft Start · Programmable Oscillator , y [applica tio n ^ UNITRÜDE available | UCCI 581 UCC2581 UCC3581 Micropower Voltage Mode , in conjunction with an exter nal depletion mode N-MOSFET provides initial controller power. Once the , Supply Voltage ( I d d < Supply C u rre n t , N .-0.3V to (VDD + 0.3V) VC, ISEN, SYNC
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OCR Scan
optocoupler a 3131 optocoupler 3131 RM8 ferrite core 3131 optocoupler
Abstract: Instrumentation â'¢ â'¢ Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type , Infrastructure Equipment â'¢ Adjustable Drain Current up to 1.6 A â'¢ Sink or source gate current , and depletion type amplifier operating in Class-A regime with drain voltages (VDRAIN) from 5V to , =12V, VDIG= 3.3V, Depletion Master Unless Otherwise Noted Symbol Conditions Vdd Charge Pump , Current Sink INEG 0 -2.46 IG -4 V 60 mA 4 mA VGATE Characteristics GATE Hittite Microwave
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HMC980 HMC-464 HMC464LP5 HMC464LP5E HMC559 HMC619

HMC753LP4

Abstract: HMC980 Depletion type devices · · · · · · · · Adjustable Drain Current up to 1.6 A Sink or source gate current , can be used to bias any enhancement and depletion type amplifier operating in Class-A regime with , , VDD=12V, VDIG= 3.3V, Depletion Master Unless Otherwise Noted Parameter Supply Voltage Symbol Vdd VDD , Change Over Temperature VNEG Characteristics Negative Voltage Output VNEG Current Sink VGATE , Sensitivity (HBM) -0.5V to VDIG + 0.5V 10.6 °C/W -65 to +150 °C -55 to +85 °C Class 1A Note that
Hittite Microwave
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HMC797 HMC753LP4 hmc659lc5 HMC637LP5 HMC753LP4E 37LP5E HMC659 HMC659LC5 HMC797LP5E HMC870LC5
Abstract: .3b. FLOAT MODE1 (Depletion/Master Mode) GND N/A Not allowed. HMC980LP4E stays in standby , '¢ Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type devices â'¢ CATV , '¢ Microwave Radio & VSAT â'¢ â'¢ Adjustable Drain Current up to 1.6 A â'¢ Sink or source , used to bias any enhancement and depletion type amplifier operating in Class-A regime with drain , , Depletion Master Unless Otherwise Noted Symbol Conditions Vdd Charge Pump Oscillator Frequency Hittite Microwave
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HMC619LP5 HMC619LP5E HMC635 HMC635LC4 HMC637 HMC637LP5E
Abstract: adjustment (No Calibration required) Supply Voltage (5V to 16.5V) Bias both Enhancement or Depletion type devices · · · · Adjustable Drain Current up to 1.6 A Sink or source gate current Internal negative voltage , amplifier. It can be used to bias any enhancement and depletion type amplifier operating in Class-A regime , , Depletion Master Unless Otherwise Noted Parameter Supply Voltage Symbol Vdd VDD = 5V VDD Quiescent Current , Output VNEG Current Sink VGATE Characteristics GATE Current Supply VGATE Low Level VGATE High Level VG2 Hittite Microwave
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