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mrfe6s9060n Datasheet

Part Manufacturer Description PDF Type
MRFE6S9060NR1 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original

mrfe6s9060n

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . 2007. All rights reserved. MRFE6S9060NR1 Document Number: RF Device Data MRFE6S9060N Rev. 1, 10 , Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 , Semiconductor MRFE6S9060NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human , Input Return Loss dB (continued) MRFE6S9060NR1 2 RF Device Data Freescale Semiconductor Freescale Semiconductor
Original

ALT1110

Abstract: MRFE6S9060N . MRFE6S9060NR1 Document Number: RF Device Data MRFE6S9060N Rev. 1, 10/2007 Freescale Semiconductor 15 , Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 , MRFE6S9060NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per , ) MRFE6S9060NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25
Freescale Semiconductor
Original
ALT1110 ATC700a A113 A114 A115 AN1955

gsm booster circuit

Abstract: mrf373al MRFE6S9045N U 880 10 AVG N -CDMA 28 22.1/880 32 1.0 MRFE6S9060N U 880 14 , MRFE6S9060N U 880 14 AVG N -CDMA 28 21.1/880 33 0.77 MW5IC970NB I 800-900
Freescale Semiconductor
Original
MRF6VP11KH MRF6VP2600H MW6IC2420NB gsm booster circuit mrf373al RF MODULATORS u880 circuit booster gsm MRF7S18125 SG1009Q42007 MRF6VP21KH MRF6VP41KH/HS MRF6V2010N/NB MRF6V2150N/NB
Abstract: , Inc. 2007. All rights reserved. MRFE6S9060NR1 Document Number: RF Device Data MRFE6S9060N Rev. 0 , Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 , Freescale Semiconductor MRFE6S9060NR1 1 Table 3. ESD Protection Characteristics Test Methodology , Adjacent Channel Power Ratio Input Return Loss dB (continued) MRFE6S9060NR1 2 RF Device Data Freescale Semiconductor
Original

gsm booster circuit

Abstract: MRF5P21180H MRFE6S9060N U 470-860 14 AVG N -CDMA 28 21.1/880 33 0.77 MRF377H I/O 470-860 , 1.3 MRFE6S9060N U 860-900 14 AVG N -CDMA 28 21.1/880 32.1 0.77
Freescale Semiconductor
Original
MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit MW6S004N SG1009Q22009 MRF6V2300N/NB MRF6V4300N/NB MRF6V10010N MRF6V14300H/HS MW6IC2425N/GN/NB

MPX6115

Abstract: S08DZ128 . SG1009­ 3 MRFE6S9060N . SG1009­ 2, 3 MRFE6S9125N/NB . SG1009­ 3
Freescale Semiconductor
Original
MPX6115 S08DZ128 mw4ic2020nb S12XDT256 MPC5516E SG1002 SG1000CRQ22009 SG187 SG1002Q22009 SG1004Q22009 SG1007Q22009 SG1010Q22009

9s12ha48

Abstract: 9S12XHZ512 . SG1009­ 3 MRFE6S9045N. SG1009­ 2, 3 MRFE6S9060N. SG1009­ 2, 3
Freescale Semiconductor
Original
9s12ha48 9S12XHZ512 9s12ha32 9s12hy64 9S08DZ32 MPC8640D SG1000CRQ42008 SG1002Q42008 SG1004Q42008 SG1007Q42008 SG1009Q42008 SG1010Q42008

MPC5634M

Abstract: MRF6VP11KH . SG1009­ 3 MRFE6S9060N . SG1009­ 2, 3 MRFE6S9125N/NB . SG1009­ 3
Freescale Semiconductor
Original
MPC5634M S12XEQ512 MPC5602P MSC7120 MXC300-30 MM908E630 DSP56311EVM DSP56311VF150 DSP56311VL150 DSP56321VF200 DSP56321VF220 DSP56321VF240

MC908GP32

Abstract: DSP56309VF100A ) MW6S010GNR1(18a) MRFE6S9045NR1 (18a) MRFE6S9060NR1(18a) MRF377HR3(18i) MRF377HR5(18p) MRFE6P3300HR3(18i , ) MW6S010GNR1(18a) MRFE6S9045NR1 (18a) MRFE6S9060NR1(18a) MRF5S9070NR1(18a) MW5IC970NBR1(18a) U U U U , (18f) MW6S010NR1(18a) MHVIC915NR2(18e) MW4IC915NBR1(18a) MRFE6S9045NR1(18a)! MRFE6S9060NR1(18a)!
Freescale Semiconductor
Original
MC908GP32 DSP56309VF100A 9S12XHZ256 9S08SG16 xc912bc32 MCHC908 SG1000CRQ42007 SG1002Q42007 SG1004Q42007 SG1006Q22007 8/16/32-B SG1007Q42007

power transistors table

Abstract: MHW6342TN . SG1009­ 3 MRFE6S9060N . SG1009­ 2, 3 MRFE6S9125N/NB . SG1009­ 3
Freescale Semiconductor
Original
power transistors table MHW6342TN Motorola Microwave power Transistor MRF6VP3450H AN548A

MS08QD4

Abstract: MCF52236 ) MRFE6S9045NR1 (18a) MRFE6S9060NR1(18a) MRF6V3090NR1(18a)! MRF6V3090NR5(18p)! MRF6V3090NBR1(18a)! , MRFE6S8046GNR1 (18a)! I/O MRFE6S9046NR1 (18a)! I/O MRFE6S9046GNR1 (18a)! I/O MRFE6S9060NR1(18a) U 1-2000
Freescale Semiconductor
Original
MS08QD4 MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 SG1000 SG1000CR SG1004 SG1007 SG1010 SG1013

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 MRFE6S9045NR1 MRFE6S9046GNR1 MRFE6S9060NR1 MD8IC970NR1 , MRFE6VS25LR5 MRFE6S9045NR1 MRFE6S9060NR1 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 APR 08 LAST SHIP 1 OCT 08 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
Freescale Semiconductor
Original
MRF8P9040N rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3

MMZ20363B

Abstract: MRFE6VP6300 Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier
Freescale Semiconductor
Original
MMZ20363B MRFE6VP6300 MMZ25333B NONLINEAR MODEL LDMOS

C1547

Abstract: MRF6S9060NBR1 Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier
Freescale Semiconductor
Original
C1547 ATC-100B-3R0 ATC100B150JT500X C101 JESD22