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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

mosfet ss 544

Catalog Datasheet MFG & Type PDF Document Tags

mosfet ss 544

Abstract: fz 5.6v MOSFET Hiccup -/ PWM SD1 SD 2 PWM FN9044.1 · - 5.6V24VVIN - 4.5V5.6V VCC , / 7 4.16 4.8 5.44 MHz SYNC 3.5 V SYNC 1.5 V SYNC 10 ns SYNC 7 VCC-0.6 V SYNC 1 , BOOT2, BOOT1- PWM SS1 SS2PGOOD MOSFET SD1 SD 2 VCC_5V PGOOD UGATE2, UGATE1- MOSFET PHASE2, PHASE1- MOSFET 3 PGND MOSFET SGND LGATE2, LGATE1- MOSFET PGND- PWM1 PWM2 5V VCC_5V MOSFET VIN- 5.6V 24V SGND-TSSOP 20QFN 17 5V ± 10% VCC
Intersil
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ISL6443 ISL6443IR ISL6443IRZ MO-220 TB379 mosfet ss 544 fz 5.6v 5V n mosfet RCS32A 544* 20QFN mosfet 544 PUB95 1-888-INTERSIL
Abstract: adjus me stable by an external MOS SFET and capac citor at SS p The UVLO threshold is set at , COMP CF 100pF R2 10k PGND RT/CLK R1 12. 5k PGND SS FB 10nF F RPG GND , 1 1 VIN PGD 16 VIN EN Packag Type ge VN3 : Q QFN 3x3-16L L SS 8 GND , EN -0.3V to 6V V LX -0.3V to 6V V BOOT LX+6V RT/CLK -0.3V to 6V V FB, SS , =5.5V 0.1 µA fsw=500k kHz, with RT resistor Soft Start (SS) SS Charge Current ISS Vss -
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PE1544 APE1544 44VN3
Abstract: citor at SS pin. p The UVLO threshold d is set at 2.6V internally, and can be increase by a programmable , RT/CLK SS BOOT 0.1uF LX 1uH H R4 LX LX PGND PGND FB L1 VOUT=1.8V Cout 22uF*2 R1 12. 5k R2 10k CF , PGND 1 2 3 4 5 EN 15 6 14 13 1 12 1 11 1 10 9 8 LX LX LX SS Exp posed P Pad PGND 7 COMP RT/CLK GND FB ABSOLU UTE MAX XIMUM RATINGS R S (at TA=25°C C) VIN EN LX BOOT RT/CLK FB, SS , (Note1) Soft Start (SS) SS Charge Current ISS Vss=0.4V V UVLO, EN N, Tthermal fault, SS Discharg ge Advanced Power Electronics
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MAR 544 MOSFET TRANSISTOR

Abstract: J 6920 FET /Mar/02 MITSUBISHI RF POWER MOS FET RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W , 1 Î.8 2.3 75 60 55 55 UNIT ß A VA V PARAMETER Zero gate voltage drain current Gate to source leak , MOS FET RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W RD70HVF1 Pout vs. Pin , Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W RD70HVF1 Pout vs. Vdd characteristics , MOS FET RD70HVF1 Silicon MOSFET Power Transistor, 175MHz70W 520MHz50W RD70HVF1 Capacitance- Vds
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OCR Scan
MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7386 mos 520MH 175MH

MTH13N50E

Abstract: MTG9N50E Sheet Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate , 1 lu Uj 1 SS ^ cd ^ uj , boundary that the load line may traverse without incurring damageto the MOSFET. The fundamental limits are , Switching Waveforms v(br)dss io VDD vds(t) 'Dit)/ / WdSR -âº] t, (TIME) Qlio2) (v-*ss- \V(BR)DSS - , C, W ss \ Ci SS \ A v
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MTH13N50E MTG9N50E MTH13N50 AN569 DS3903 MTG9N50E/D

7807 voltage regulator

Abstract: ics date sheet 2012 load °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance
Texas Instruments
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7807 voltage regulator ics date sheet 2012 load 7807 regulator VSSOP10 PWM TPS53014
Abstract: °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance Texas Instruments
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ISO/TS16949
Abstract: VBST 10 DRVH 9 SW 8 EN DRVL 7 VIN PGND 6 1 VFB 2 SS 3 , Output voltage range UNIT â'"0.3 to 30 â'"2 to 36 DRVH - SW â'"0.3 to 6 DRVL, VREG5, SS , DRVH - SW â'"0.1 5.5 DRVL, VREG5, SS â'"0.1 5.5 PGND Output Voltage range 28 , 25° C 5.1 V 120 mA OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH DRVH resistance , MAX UNIT 0.1 0.2 V -7.36 -6.4 -5.44 A 4.5 5.0 4.5 nA/° C Texas Instruments
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mosfet ss 544

Abstract: IRFPS40N50L PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V , Conditions D ­­­ ­­­ 46 MOSFET symbol showing the A G ­­­ ­­­ 180 integral reverse S p-n junction , Temperature( ° C) J Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig , ] 16.10 [.633] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X
International Rectifier
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IRF 544 IRF 547 MOSFET mosfet 30A fet 500v 10A TO-247AC Package fet 547 5M-1994 O-274AA

IRFPS40N50L

Abstract: mosfet ss 544 PD- 93923A IRFPS40N50L SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency , 46 ­­­ ­­­ 180 A Conditions MOSFET symbol showing the G integral reverse p-n , ) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped , ] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60
International Rectifier
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IRFPS40N50
Abstract: DRVH 9 SW 8 EN DRVL 7 VIN PGND 6 1 VFB 2 SS 3 VREG5 EN , â'"0.3 to 30 â'"2 to 36 DRVH - SW â'"0.3 to 6 DRVL, VREG5, SS â'"0.3 to 6 V , DRVL, VREG5, SS â'"0.1 5.5 PGND Output Voltage range 28 VBST - SW Input voltage , OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH DRVH resistance RDRVL DRVL resistance TD Dead , -6.4 -5.44 μA 4.5 5.0 INTERNAL BOOST DIODE VFBST Forward voltage VVREG5-VBST, IF Texas Instruments
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mosfet ss 544

Abstract: IRFPS43N50 PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High , MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 47A, VGS = 0V TJ = , . Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator , 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X
International Rectifier
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IRFPS43N50 irf 940

irfps40n60k

Abstract: IRFPS PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode , IRFPS40N60K HEXFET® Power MOSFET VDSS RDS(on) typ. ID 0.110 40A 600V Benefits Low Gate , Turn-On Time Min. Typ. Max. Units Conditions D ­­­ ­­­ 40 MOSFET symbol showing the A G ­­­ ­­­ , Current Fig 14. Threshold Voltage Vs. Temperature 1 5V V (B R )D SS D R IV E R L VDS D , [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X 1.60
International Rectifier
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IRFPS

IRFPS43N50K

Abstract: mosfet ss 544 PD- 93922A SMPS MOSFET IRFPS43N50K HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High , 47 ­­­ ­­­ 190 A Conditions MOSFET symbol showing the G integral reverse p-n , ) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped , ] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60
International Rectifier
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400v power supply

S18A

Abstract: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES â'¢ Isolated Hermetic Metal , series of hermetically packaged products feature the latest advanced MOSFET and packaging technology , 25 TC = + 125°C 250 Vos = OV, Vos = +20V ±100 *D SS Gate Reverse Current mA , 544 â 
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S18A

mosfet ss 544

Abstract: VSSOP10 PWM °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance
Texas Instruments
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ncp1580

Abstract: . Application Diagram; 12 V Input, 1.0 V at 20 A Output FAULT OSC SS (VSS) FB 6 Error Amp + -+ Comparator , gate MOSFET driver pin. Connect this pin to the gate of the top N-Channel MOSFET. IC ground reference. All control circuits are referenced to this pin. Bottom gate MOSFET driver pin. Connect this pin to the gate of the bottom N-Channel MOSFET. Supply rail for the internal circuitry. Operating supply , source of the top MOSFET. A Schottky diode between this pin and ground is recommended to reduce negative
ON Semiconductor
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ncp1580 NCP1580

transistor smd 2TH

Abstract: smd transistor 2T and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended , DIAGRAM PROTECTION SUPPLY DRAIN FLAG ON CLAMP INPUT POWER MOSFET a t Ï I LOGIC , quickly discharge the power MOSFET gate capacitance. CONDITIONS Vs = for valid protection BUK116 , VALUES BUK116-50L/S rain source voltage above 50 V the power MOSFET is actively turned on to clamp , Drain-source clamping voltage Drain-source clamping voltage CONDITIONS R,s = 100 ß; lD= 10 mA MIN. 50 50
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transistor smd 2TH smd transistor 2T WN smd transistor wn 537 transistor 4F smd transistor BUK106-50L/S BUK116-50L BUK116-50S BUK116-50L7S BUK116-50
Abstract: IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A . « . HIGH CURRENT POWER MOS MODULE VERY LOW , 100 Tj(°C) 4/5 544 £ÿj SGS-fHOMSON KMiiSOlllCTHS-SJS 30E S~G D 7^2=1237 , 0.590 1.193 1.503 0.815 0.358 0.905 1.000 0.080 - PIN CONNECTIONS MOSFET pin 1: Source pin 3: Drain , 4 0.480 0.358 0.503 1.000 0.080 - PIN CONNECTIONS MOSFET pin 1: Source pin 3: Drain pin 1 -
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3074Q QQ3Q741 T-39-15 T-91-20 PC-029

6790

Abstract: TO274 PD - 93912B IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 170 showing the A , Test Circuit V (B R )D SS tp 1500 1000 500 0 25 50 75 100 125 150 , 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X
International Rectifier
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6790 TO274 TO-274
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