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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP2100EIB Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil
HIP6601BCBZA Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596CRZ Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6605IBZ Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

mosfet ss 544

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mosfet ss 544

Abstract: fz 5.6v MOSFET Hiccup -/ PWM SD1 SD 2 PWM FN9044.1 · - 5.6V24VVIN - 4.5V5.6V VCC , / 7 4.16 4.8 5.44 MHz SYNC 3.5 V SYNC 1.5 V SYNC 10 ns SYNC 7 VCC-0.6 V SYNC 1 , BOOT2, BOOT1- PWM SS1 SS2PGOOD MOSFET SD1 SD 2 VCC_5V PGOOD UGATE2, UGATE1- MOSFET PHASE2, PHASE1- MOSFET 3 PGND MOSFET SGND LGATE2, LGATE1- MOSFET PGND- PWM1 PWM2 5V VCC_5V MOSFET VIN- 5.6V 24V SGND-TSSOP 20QFN 17 5V ± 10% VCC
Intersil
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ISL6443 ISL6443IR ISL6443IRZ MO-220 TB379 mosfet ss 544 fz 5.6v 5V n mosfet RCS32A 544* 20QFN mosfet 544 PUB95 1-888-INTERSIL
Abstract: adjus me stable by an external MOS SFET and capac citor at SS p The UVLO threshold is set at , COMP CF 100pF R2 10k PGND RT/CLK R1 12. 5k PGND SS FB 10nF F RPG GND , 1 1 VIN PGD 16 VIN EN Packag Type ge VN3 : Q QFN 3x3-16L L SS 8 GND , EN -0.3V to 6V V LX -0.3V to 6V V BOOT LX+6V RT/CLK -0.3V to 6V V FB, SS , =5.5V 0.1 µA fsw=500k kHz, with RT resistor Soft Start (SS) SS Charge Current ISS Vss -
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PE1544 APE1544 44VN3
Abstract: citor at SS pin. p The UVLO threshold d is set at 2.6V internally, and can be increase by a programmable , RT/CLK SS BOOT 0.1uF LX 1uH H R4 LX LX PGND PGND FB L1 VOUT=1.8V Cout 22uF*2 R1 12. 5k R2 10k CF , PGND 1 2 3 4 5 EN 15 6 14 13 1 12 1 11 1 10 9 8 LX LX LX SS Exp posed P Pad PGND 7 COMP RT/CLK GND FB ABSOLU UTE MAX XIMUM RATINGS R S (at TA=25°C C) VIN EN LX BOOT RT/CLK FB, SS , (Note1) Soft Start (SS) SS Charge Current ISS Vss=0.4V V UVLO, EN N, Tthermal fault, SS Discharg ge Advanced Power Electronics
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MAR 544 MOSFET TRANSISTOR

Abstract: J 6920 FET /Mar/02 MITSUBISHI RF POWER MOS FET RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W , 1 Î.8 2.3 75 60 55 55 UNIT ß A VA V PARAMETER Zero gate voltage drain current Gate to source leak , MOS FET RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W RD70HVF1 Pout vs. Pin , Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W RD70HVF1 Pout vs. Vdd characteristics , MOS FET RD70HVF1 Silicon MOSFET Power Transistor, 175MHz70W 520MHz50W RD70HVF1 Capacitance- Vds
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OCR Scan
MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7386 mos 520MH 175MH

MTH13N50E

Abstract: MTG9N50E Sheet Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate , 1 lu Uj 1 SS ^ cd ^ uj , boundary that the load line may traverse without incurring damageto the MOSFET. The fundamental limits are , Switching Waveforms v(br)dss io VDD vds(t) 'Dit)/ / WdSR -âº] t, (TIME) Qlio2) (v-*ss- \V(BR)DSS - , C, W ss \ Ci SS \ A v
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MTH13N50E MTG9N50E MTH13N50 AN569 DS3903 MTG9N50E/D

7807 voltage regulator

Abstract: ics date sheet 2012 load °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance
Texas Instruments
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7807 voltage regulator ics date sheet 2012 load 7807 regulator VSSOP10 PWM TPS53014
Abstract: °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance Texas Instruments
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ISO/TS16949
Abstract: VBST 10 DRVH 9 SW 8 EN DRVL 7 VIN PGND 6 1 VFB 2 SS 3 , Output voltage range UNIT â'"0.3 to 30 â'"2 to 36 DRVH - SW â'"0.3 to 6 DRVL, VREG5, SS , DRVH - SW â'"0.1 5.5 DRVL, VREG5, SS â'"0.1 5.5 PGND Output Voltage range 28 , 25° C 5.1 V 120 mA OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH DRVH resistance , MAX UNIT 0.1 0.2 V -7.36 -6.4 -5.44 A 4.5 5.0 4.5 nA/° C Texas Instruments
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mosfet ss 544

Abstract: IRFPS40N50L PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V , Conditions D ­­­ ­­­ 46 MOSFET symbol showing the A G ­­­ ­­­ 180 integral reverse S p-n junction , Temperature( ° C) J Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig , ] 16.10 [.633] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X
International Rectifier
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IRF 544 IRF 547 MOSFET mosfet 30A fet 500v 10A TO-247AC Package fet 547 5M-1994 O-274AA

IRFPS40N50L

Abstract: mosfet ss 544 PD- 93923A IRFPS40N50L SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency , 46 ­­­ ­­­ 180 A Conditions MOSFET symbol showing the G integral reverse p-n , ) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped , ] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60
International Rectifier
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IRFPS40N50
Abstract: DRVH 9 SW 8 EN DRVL 7 VIN PGND 6 1 VFB 2 SS 3 VREG5 EN , â'"0.3 to 30 â'"2 to 36 DRVH - SW â'"0.3 to 6 DRVL, VREG5, SS â'"0.3 to 6 V , DRVL, VREG5, SS â'"0.1 5.5 PGND Output Voltage range 28 VBST - SW Input voltage , OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH DRVH resistance RDRVL DRVL resistance TD Dead , -6.4 -5.44 μA 4.5 5.0 INTERNAL BOOST DIODE VFBST Forward voltage VVREG5-VBST, IF Texas Instruments
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mosfet ss 544

Abstract: IRFPS43N50 PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High , MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 47A, VGS = 0V TJ = , . Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator , 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X
International Rectifier
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IRFPS43N50 irf 940

irfps40n60k

Abstract: IRFPS PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode , IRFPS40N60K HEXFET® Power MOSFET VDSS RDS(on) typ. ID 0.110 40A 600V Benefits Low Gate , Turn-On Time Min. Typ. Max. Units Conditions D ­­­ ­­­ 40 MOSFET symbol showing the A G ­­­ ­­­ , Current Fig 14. Threshold Voltage Vs. Temperature 1 5V V (B R )D SS D R IV E R L VDS D , [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X 1.60
International Rectifier
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IRFPS

IRFPS43N50K

Abstract: mosfet ss 544 PD- 93922A SMPS MOSFET IRFPS43N50K HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High , 47 ­­­ ­­­ 190 A Conditions MOSFET symbol showing the G integral reverse p-n , ) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS tp IAS Fig 12d. Unclamped , ] 15.50 [.611] 4 C 1 2 3 B 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60
International Rectifier
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400v power supply

S18A

Abstract: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES â'¢ Isolated Hermetic Metal , series of hermetically packaged products feature the latest advanced MOSFET and packaging technology , 25 TC = + 125°C 250 Vos = OV, Vos = +20V ±100 *D SS Gate Reverse Current mA , 544 â 
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S18A

mosfet ss 544

Abstract: VSSOP10 PWM °C MIN TYP 0.1 MAX 0.2 -5.44 4.5 UNIT V A mA nA/°C V Forward voltage SS Charge current SS , 2 3 VFB SS 10 9 8 7 6 VREG5 EN VIN VOUT EN VIN 4 5 ORDERING INFORMATION TA , DRVH - SW DRVL, VREG5, SS PGND TA TSTG TJ (1) Operating ambient temperature range Storage temperature , voltage range VFB EN SW DRVH Output Voltage range DRVH - SW DRVL, VREG5, SS PGND TA TJ Operating free-air , VREG5 OUTPUT OUTPUT: N-CHANNEL MOSFET GATE DRIVERS RDRVH RDRVL TD DRVH resistance DRVL resistance
Texas Instruments
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ncp1580

Abstract: . Application Diagram; 12 V Input, 1.0 V at 20 A Output FAULT OSC SS (VSS) FB 6 Error Amp + -+ Comparator , gate MOSFET driver pin. Connect this pin to the gate of the top N-Channel MOSFET. IC ground reference. All control circuits are referenced to this pin. Bottom gate MOSFET driver pin. Connect this pin to the gate of the bottom N-Channel MOSFET. Supply rail for the internal circuitry. Operating supply , source of the top MOSFET. A Schottky diode between this pin and ground is recommended to reduce negative
ON Semiconductor
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ncp1580 NCP1580

transistor smd 2TH

Abstract: smd transistor 2T and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended , DIAGRAM PROTECTION SUPPLY DRAIN FLAG ON CLAMP INPUT POWER MOSFET a t Ï I LOGIC , quickly discharge the power MOSFET gate capacitance. CONDITIONS Vs = for valid protection BUK116 , VALUES BUK116-50L/S rain source voltage above 50 V the power MOSFET is actively turned on to clamp , Drain-source clamping voltage Drain-source clamping voltage CONDITIONS R,s = 100 ß; lD= 10 mA MIN. 50 50
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transistor smd 2TH smd transistor 2T WN smd transistor wn 537 transistor 4F smd transistor BUK106-50L/S BUK116-50L BUK116-50S BUK116-50L7S BUK116-50
Abstract: IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A . « . HIGH CURRENT POWER MOS MODULE VERY LOW , 100 Tj(°C) 4/5 544 £ÿj SGS-fHOMSON KMiiSOlllCTHS-SJS 30E S~G D 7^2=1237 , 0.590 1.193 1.503 0.815 0.358 0.905 1.000 0.080 - PIN CONNECTIONS MOSFET pin 1: Source pin 3: Drain , 4 0.480 0.358 0.503 1.000 0.080 - PIN CONNECTIONS MOSFET pin 1: Source pin 3: Drain pin 1 -
OCR Scan
3074Q QQ3Q741 T-39-15 T-91-20 PC-029

6790

Abstract: TO274 PD - 93912B IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 170 showing the A , Test Circuit V (B R )D SS tp 1500 1000 500 0 25 50 75 100 125 150 , 14.80 [.582] 13.80 [.544] 5.45 [.215] 2X Ø 1.60 [.063] MAX. 4.25 [.167] 3.85 [.152] 3X
International Rectifier
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6790 TO274 TO-274
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