NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| LM2743-19AEVAL | Texas Instruments | Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller | 
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| LM2743EVAL | Texas Instruments | Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller |
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| LM2743MTCX/0102 | Texas Instruments | Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller 14-TSSOP |
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| LM2744EVAL | Texas Instruments | Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference |
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| LM2743MTCX | Texas Instruments | Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller 14-TSSOP -40 to 125 |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ) 1- V IN FIGURE 8. - LOW-VOLTAGE MICROPROCESSOR RESET VCC 270 4.3V RL SMP60N03-10L SMP60N03-10L , volt threshold of the MC34164 MC34164, its output grounds the gate of the L2 MOSFET. FIGURE 10. - MOSFET LOW-VOLTAGE GATE DRIVE PROTECTION 7 , MONITOR 4. INPUT CURRENT vs. INPUT VOLTAGE 10. MOSFET LOW VOLTAGE GATE DRIVE PROTECTION 5. , MONITOR Copyright © 1997 Rev. 1.5 11/97 3 Overheating of the logic level power MOSFET due to ... | Original |
7 pages, |
1-10V 150MIL 33164 33164 SOIC-8 MC33164 MC33164DM MC34164 MC34164DM MC34164LP gate drive protection 34164 SMP60N03-10L MC33164/MC34164 MC33164/MC34164 abstract |
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| Abstract: gate of the L2 MOSFET. FIGURE 10. - MOSFET LOW-VOLTAGE GATE DRIVE PROTECTION 7 , VOLTAGE REACHES BELOW 4.3V 1 VTH(MPU) 1- V IN FIGURE 8. - LOW-VOLTAGE MICROPROCESSOR RESET , SINK CURRENT 9. VOLTAGE MONITOR 4. INPUT CURRENT vs. INPUT VOLTAGE 10. MOSFET LOW , Overheating of the logic level power MOSFET due to insufficient gate voltage can be prevented with the above ... | Original |
7 pages, |
1-10V 150MIL 34164 MC33164 MC33164DM MC33164LP MC34164DM MC34164LP power supply with mosfet dm 100 MC34164 SMP60N03-10L DC 0509 1-10V current sink MC33164 abstract |
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| Abstract: Converter 1.5V to 15.6V + 15V Drives external MOSFET Low-Voltage Boost Converters MAX654 MAX654 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Optimized for 1 cell MAX 655 Low-Voltage Boost Converter 1.5V to 5.6V +5V Optimized for 2 cells MAX656 MAX656 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Drives external MOSFET MAX657 MAX657 Low-Voltage Boost Converter 1.15V to 3.6V +3V Optimized for 1 eel MAX658 MAX658 Low-Voltage Boost Converter 1.5V to 5.6V +5V Drives external MOSFET MAX659 MAX659 Low-Voltage Boost Converter 1.5V to 3.6V ... | OCR Scan |
12 pages, |
TRANSISTOR 642 MAX641XEPA MAX642XCPA MAX642XCSA Si7661 DIP MAX643 RC4193 MTM25N05L rf513 MAX642 equivalent analog IRF513 IRL734 IRZ14 MAX641/MAX642/MAX643 MAX641/MAX642/MAX643 MAX641/642/643 MAX641/MAX642/MAX643 abstract |
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| Abstract: MAX643 MAX643 High-Power Boost Converter 1.5V to 15.6V + 15V Drives external MOSFET Low-Voltage Boost Converters MAX654 MAX654 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Optimized for 1 cell MAX 655 Low-Voltage Boost Converter 1.5V to 5.6V +5V Optimized for 2 cells MAX656 MAX656 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Drives external MOSFET MAX657 MAX657 Low-Voltage Boost Converter 1.15V to 3.6V +3V Optimized for 1 eel MAX658 MAX658 Low-Voltage Boost Converter 1.5V to 5.6V +5V Drives external MOSFET MAX659 MAX659 Low-Voltage Boost Converter 1.5V to ... | OCR Scan |
12 pages, |
MAX654 MAX642XCSA MAX642XCPA MAX641XEPA IRZ14 MAX641/MAX642/MAX643 MAX641/642/643 MAX641/MAX642/MAX643 abstract |
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| Abstract: Drives external MOSFET Low-Voltage Boost Converters MAX654 MAX654 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Optimized for 1 cell MAX 655 Low-Voltage Boost Converter 1.5V to 5.6V +5V Optimized for 2 cells MAX656 MAX656 Low-Voltage Boost Converter 1.15V to 5.6V + 5V Drives external MOSFET MAX657 MAX657 Low-Voltage Boost Converter 1.15V to 3.6V +3V Optimized for 1 col MAX658 MAX658 Low-Voltage Boost Converter 1.5V to 5.6V +5V Drives external MOSFET MAX659 MAX659 Low-Voltage Boost Converter 1.5V to 3.6V +3V Optimized for 2 cells ... | OCR Scan |
12 pages, |
transistor irf620 MAX642XCSA MAX642XCPA MAX641XEPA IRZ14 MAX641/MAX642/MAX643 MAX641/642/643 MAX641/MAX642/MAX643 abstract |
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| Abstract: Drives external MOSFET Drives externa! MOSFET Drives external MOSFET Low-Voltage Boost Converters MAX654 MAX654 MAX655 MAX655 MAX656 MAX656 MAX 657 MAX 658 MAX659 MAX659 Low-Voltage Boost Converter Low-Voltage Boost Converter Low-Voltage Boost Converter Low-Voltage Boost Converter Low-Voltage Boost Converter Low-Voltaqe Boost , , low-cost inductor. An additional MOSFET or bipolar transistor is needed for high-power applications. Low , logic-level shutdown, adjustable oscillator frequency, and external MOSFET drive. See Table 3 for a summary of ... | OCR Scan |
12 pages, |
siemens LFL 1 635 hiah power fet JRF620 MAX641 MAX641XCPA MAX641XCSA MAX641XESA MAX642 MAX642 equivalent Si7661 DIP parallel MOSFET Transistors MTM25N05L MOSFET IRF540 MAX643 MAX641 abstract |
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| Abstract: , light, low power loss The MOSFET's low-voltage drive and low power dissipation characteristics , Fields Portable devices The MOSFET's lowvoltage drive and low power dissipation characteristics , Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET (S-MOS) devices developed for , v: New product MOSFET + SBD Package Type Polarity MOSFET VGSS (V) vSSM5G01TU - 30 , 36 0.17 4-V Drive (Max) VGS (V) ID (A) 0.23 10 2.5 q Power MOSFET ... | Original |
21 pages, |
2sk1029 2SK1378 transistor 2sk1213 2sk851 2sk2352 MOSFET 2SK1358 Transistor Guide 2SK1487 2SK1118 2SK1723 equivalent 2sk2698 mosfet 2SK1346 2sk1855 transistor 2SK1603 2SK423 SC-70 SC-59 SC-70 abstract |
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| Abstract: high-performance, low-voltage power MOSFET with a drive IC in a single package and have a bonding-wire-less design , , low-voltage power MOSFET in an extremely small package, making them ideal for use in compact systems. , 6.2 max TOP MARK 3.95 max LFPAK SOP-8 1 max Our low-voltage power MOSFET devices , Power Transistor Power MOSFET Low-Voltage Power MOSFETs Low on-resistance, low gate charge, and , Low-Voltage Power MOSFET On-Resistance Performance On-Resistance vs. Gate Charge 10th 100V RDS (on ... | Original |
82 pages, |
free transistor equivalent book 2sc h945 transistor ir model HZK 219 transistor h945 smd code FX mosfet datasheet abstract |
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| Abstract: low-voltage supply is not sufficient to fully turn on the MOSFET. For such low-voltage systems, consider the circuit of Figure 1. Figure 1. This low-voltage circuit disconnects the load when the supply voltage , Load from Low-Voltage Supply May 29, 2003 APPLICATION NOTE 2080 Simple Circuit Disconnects Load from Low-Voltage Supply Power supplies often include a circuit that disconnects the load when the supply voltage drops too low (when a battery is nearly discharged, for example). A p-channel MOSFET ... | Original |
2 pages, |
APP2080 AN2080 datasheet abstract |
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| Abstract: discharged, for example). A p-channel MOSFET connected between supply and load is the typical approach. However, a 1.5V single-cell battery or other low-voltage supply is not sufficient to fully turn on the MOSFET. For such low-voltage systems, consider the circuit of Figure 1. Figure 1. This low-voltage , Disconnects Load from Low-Voltage Supply The following application note demonstrates a simple circuit using a , uses a P-channel MOSFET to disconnect the load from a 1.5V supply. Power supplies often include a ... | Original |
2 pages, |
MAX6327 MAX1697 APP2237 "Microprocessor Supervisor" MOSFET APPLICATION NOTE 2237 simple power supply using mosfet datasheet abstract |
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| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NE" Series Power MOSFETs Schematic Diagram of a Typical Inverter for U.P.S. © Copyright STMicroelectronics 2000. www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/ne_6.htm |
STMicroelectronics | 12/06/2000 | 3.7 Kb | HTM | ne_6.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NE" Series Power MOSFETs STP16NE06 STP16NE06 STP16NE06 STP16NE06 Exceptional dv/dt capability: 15V/ns The transistor's avalanche ruggedness has also been increased with respect to the standard low voltage series, which is already 100% avalanche conditions the current in the transformer reaches 350A and the body-to-drain diode of each MOSFET turns off www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/ne_5.htm |
STMicroelectronics | 12/06/2000 | 4.73 Kb | HTM | ne_5.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NF" Series Power MOSFETs STV160NF02L STV160NF02L STV160NF02L STV160NF02L - in PowerSO-10 a Major Breakthrough Produced using the STripFET 2 technology this device is the result of the very advanced low voltage process. Thanks to the multiple bonding capability of the PowerSO-10 package, permits drastic cuts in the assembling resistance not possible with www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/nf2.htm |
STMicroelectronics | 12/06/2000 | 4.65 Kb | HTM | nf2.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NE" Series Power MOSFETs All the cell processes are dependent on three "critical" dimensions and are therefore referred to as "Three-Feature Size". Of course, the higher the cell densities, that is, the smaller the three parameters, the more critical the overall process.By contrast, the new technology enables us to eliminate the www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/ne_2.htm |
STMicroelectronics | 12/06/2000 | 5.1 Kb | HTM | ne_2.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NE" Series Power MOSFETs Cost-Effective Process Customers are looking for cost-effective products, not just the maximum performance at high cost. Some competitors are working at very high performance devices, but cost per Amp remains relatively high since the technology is being pushed to the limit. With EHD1 www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/ne_3.htm |
STMicroelectronics | 12/06/2000 | 4.68 Kb | HTM | ne_3.htm |
| ST | Product Presentations | Discretes | Power MOSFETs | Low Voltage Power MOSFETs Power MOSFETs Low Voltage MOSFETs Advanced MOSFETs for DC-DC converters The dissipated by the MOSFETs, the goal is to minimise the total power losses, conduction and switching. With this in mind a new series of low voltage MOSFETs has been introduced to minimise the R DS www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/dcdc.htm |
STMicroelectronics | 01/12/2000 | 11.77 Kb | HTM | dcdc.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NF" Series Power MOSFETs Low Voltage STripFET™ Power MOSFETs STripFET 2 New Â"NFÂ" Series Reach New Frontiers in R DS(on) Values To address the needs of the modern circuit designer for switchmode operation the new alternative STripFET technology has been developed. For such applications the highly www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/nf1-v1.htm |
STMicroelectronics | 20/10/2000 | 5.62 Kb | HTM | nf1-v1.htm |
| ST | Product Presentations | Discretes | Power MOSFETs | Low Voltage STripFET | "NF" Series Power MOSFETs Low Voltage STripFET™ Power MOSFETs STripFET 2 New Â"NFÂ" Series Reach New Frontiers in R DS(on) Values To address the needs of the modern circuit designer for switchmode operation the new alternative STripFET technology has been developed. For such applications the highly www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/nf1.htm |
STMicroelectronics | 14/11/2000 | 5.61 Kb | HTM | nf1.htm |
| ST | Products Presentation | Discrete | Power MOSFETs | Low Voltage STripFET | "NE STripFET™ Low Voltage Power MOSFETs The "NE" Series 8um low voltage Power MOSFET technology. After the development of the new "NB" series - the first non-cellular high voltage MOSFETs - ST has introduced an innovative low voltage family. Today low voltage MOSFETs are increasingly used in a wide variety of applications that www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/ne_1.htm |
STMicroelectronics | 12/06/2000 | 5.94 Kb | HTM | ne_1.htm |
| ST | Product Presentations | Discretes | Power MOSFETs | Low Voltage Power MOSFETs Power MOSFETs Isolated DC-DC Converter and MOSFET Requirements The forward single or topology, low RDS(on) MOSFETs are used as synchronous rectifiers replacing the Schottky diodes to increase the efficiency. The MOSFETs in the secondary side can be either self-driven or driven by an www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powmosft/dcdc2.htm |
STMicroelectronics | 01/12/2000 | 6.69 Kb | HTM | dcdc2.htm |