500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

mosfet 4800

Catalog Datasheet MFG & Type PDF Document Tags

1262-33

Abstract: IXTP44N10T 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900
-
Original

mosfet 4800

Abstract: ,mosfet smd 4800 MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features Low on-resistance 0.1max +0.2 5.28-0.2 Built-in gate protection diode +0.1 1.27-0.1 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 5.08 +0.2 15.25-0.2 Low Ciss: Ciss = 4800 pF TYP , temperature Tstg -55 to +150 * PW 10 s, duty cycle 1% www.kexin.com.cn 1 MOSFET , resistance 16 23 m Ciss 4800 VDS=-10V,VGS=0,f=1MHZ pF Output capacitance Coss
Kexin
Original
mosfet 4800 4800 power mosfet 4800 mosfet

mosfet 4400

Abstract: mosfet 20n60 Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET. HDMOS II , MOSFET. It also features enhancements to the MOSFET cell design which significantly improve dv/dt
-
OCR Scan
mosfet 4400 mosfet 20n60 MOSFET 11N80 20N60 mosfet 7n80 4500 MOS 22N55 15N60 20N60 11N80 13N80 10N90

4800 8pin mosfet

Abstract: AC-DC Controllers : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability , . (2)* 19.00 48.00 + 200 0.08 5000 150 No 6-Pin Package DC Wiring Config. (3 , 150 150 No 8-Pin SIP DIH-139 DC N/O SPST 19.00 48.00 + 200 0.10 5000 150
Dionics
Original
DIH-137 DIH-143 DIH-126 DIH-127 DIH-128 DIH-129 4800 8pin mosfet AC-DC Controllers Dionics MIL-R-28750 DIH-1378 DIH-1380

mosfet 4800

Abstract: 4800 mosfet LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , area b. Starting Tj=25, ID=30A, VDD=37.5V 01 LTP70N06 N-Channel 60V Power MOSFET Electrical , =25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 102 VDS=30V, RG , Integral reverse PN diode in The MOSFET V IS=70A , VGS = 0V Note: Pulse test: pulse width
Lite-On Technology
Original
4800 N-channel mosfet mosfet 4800 circuit 4800 power mosfet datasheet S 170 MOSFET POWER MOSFET

SJ 76 A DIODE EMI

Abstract: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF
International Rectifier
Original
SJ 76 A DIODE EMI IRF6643TRP IRF6643P J-STD-020D
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï'·ï'  Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ International Rectifier
Original
IRF6641TRP IRF6641P
Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute International Rectifier
Original
Abstract: Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free D BV DSS Fast Switching Performance Low Profile (< 0.7mm ) G S 25V RDS(ON) Low Conductance Losses 6mâ"¦ ID 15A Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon TM to provide the lowest on-resistance, a low profile and , -3TR RoHS-compliant halogen-free GreenFETTM SQ package, shipped on tape and reel (4800 pcs/reel) ©2009 Advanced Advanced Power Electronics
Original
AP1001BSQ-3TR
Abstract: Advanced Power Electronics Corp. AP1005BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 25V 3.8mâ"¦ 19A Description The AP1005BSQ-3 uses the latest APEC Power MOSFET silicon TM to provide the lowest on-resistance, a low profile and , -3TR RoHS-compliant halogen-free GreenFETTM SQ package, shipped on tape and reel (4800 pcs/reel) ©2010 Advanced Advanced Power Electronics
Original
AP1005BSQ-3TR
Abstract: Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 30V 4.5mâ"¦ 17.3A Description The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM to provide the lowest on-resistance, a low profile and , package, shipped on tape and reel (4800 pcs/reel) 20090923-3 PRELIMINARY 1/5 Advanced Power Advanced Power Electronics
Original
AP1003BST-3TR

mosfet 4800

Abstract: ltp70n06 LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , . Starting Tj=25, ID=30A, VDD=37.5V Rev.1, Nov. 2010 01 LTP70N06 N-Channel 60V Power MOSFET , 25 4620 VDS=25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 , Test Condition Integral reverse PN diode in The A V MOSFET IS=70A , VGS = 0V Note , Power MOSFET Typical Characteristics (TJ =25 Noted) Rev.1, Nov. 2010 03 LTP70N06 N-Channel
Lite-On Technology
Original
LTP70N

2sj403

Abstract: 2SJ406 of package of small-signal power MOSFET series. See the tables on other pages. ale AP Ser 1 es , . (VGS±30V guaranteed in VDSS 450V series.) Designed as a power MOSFET with well-balanced characteristics , 2400 4800 2sk1433 2sk1434 2sk1435 2sk1436 T0-3PML 30 50 120 200 60 80 40m/55m 23m/35m 2400 4800
-
OCR Scan
2SK2142 2sj403 2SJ406 2sk2532 2sk2680 2SJ28 2sk2681 2SK2531 2SK2532 2SK2533 2SK2534 2SK2321 2SK2592

TO220 Semiconductor Packaging

Abstract: MOSFET HIGH VOLTAGE C o l l m e r Semiconductor MOS-FET, High Voltage Diodes N-Channel Silicon Power MOS-FET cF-I Series = Low RDS(ON) cF-III Series = Logic Level, High gfs cFAP-IIA = Reduced Turn Off Time cF-II Series = VGS ±30 V, Reduced Turn Off Time cFAP-III = Logic Level, High Avalanche Ruggedness cFAP-IIIBH = , 0.006 9000 1250 250 285 TO3P 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220 2SK3217-01MR FAP-IIIBH 100 50.0 70 — 0.025 4800 1140 230 265 TO-220F15 2SK3218-01 FAP-IIIBH 150 35.0 80 — 0.048
Allied Electronics Catalog
Original
TO220 Semiconductor Packaging MOSFET HIGH VOLTAGE 2SK2642-01MR 2SK208 2SJ314-01L 2SJ314-01S 2SK2248-01L 2SK2248-01S 2SK2687-01 2SK2893-01

mosfet 4800 circuit

Abstract: existing Surface Mount Techniques l IRF6603 Qg(typ.) 48nC PD - 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , ) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF6603 Power MOSFET , , also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are
International Rectifier
Original
AN-1035 IRF6612

DirectFET

Abstract: marking code V6 73 DIODE 94365E Power MOSFET 11.5m@VGS = 7.0V 13m@VGS = 4.5V MQ Applicable DirectFET Outline and , IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 92 1.2 47 39 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , ) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF6604 Power MOSFET , , also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are
International Rectifier
Original
DirectFET marking code V6 73 DIODE IRF6621

irf6603tr1

Abstract: mosfet 4800 PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , 7 IRF6603 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous , the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses
International Rectifier
Original
irf6603tr1 IRF660
Abstract: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the , â'"â'"â'" 26 39 nC 2 Ù MOSFET symbol A D G TJ = 25°C, IF = 9.6A di/dt = , Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special , MOSFET, but these conduction losses are only about one half of the total losses. The power loss International Rectifier
Original
94365C

IRF6603

Abstract: IRF6603TR1 PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A , Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special , MOSFET, but these conduction losses are only about one half of the total losses. The power loss
International Rectifier
Original
603TR1

IRF6602

Abstract: IRF6602TR1 PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , /IRF6602TR1 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET , the MOSFET, but these conduction losses are only about one half of the total losses. The power
International Rectifier
Original
IRF6602TR1
Showing first 20 results.