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LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

mosfet 4800 circuit

Catalog Datasheet MFG & Type PDF Document Tags

1262-33

Abstract: IXTP44N10T . The DCB can be patterned like a printed circuit board, which enables the unique integration , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL
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mosfet 4400

Abstract: mosfet 20n60 Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET. HDMOS II , MOSFET. It also features enhancements to the MOSFET cell design which significantly improve dv/dt
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OCR Scan

4800 8pin mosfet

Abstract: AC-DC Controllers : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn-off circuit. The photovoltaic diode array is a series-connected group of photo sensitive diodes which , , which then responds with a self-generated open circuit voltage, Voc, proportio nal to the LED input , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability
Dionics
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SJ 76 A DIODE EMI

Abstract: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF
International Rectifier
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Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï'·ï'  Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ International Rectifier
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Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute International Rectifier
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mosfet 4800

Abstract: 4800 mosfet LTP70N06 N-Channel 60V Power MOSFET Test Circuit and Waveform 05 LTP70N06 N-Channel 60V Power , LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , area b. Starting Tj=25, ID=30A, VDD=37.5V 01 LTP70N06 N-Channel 60V Power MOSFET Electrical , =25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 102 VDS=30V, RG , Integral reverse PN diode in The MOSFET V IS=70A , VGS = 0V Note: Pulse test: pulse width
Lite-On Technology
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mosfet 4800 4800 mosfet 4800 power mosfet 4800 N-channel mosfet mosfet 4800 circuit 4800 power mosfet datasheet

mosfet 4800 circuit

Abstract: existing Surface Mount Techniques l IRF6603 Qg(typ.) 48nC PD - 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , . Unclamped Inductive Test Circuit V(BR)DSS tp 40 20 0 25 50 75 100 125 150 Starting Tj, Junction , < 1µs Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS
International Rectifier
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AN-1035 IRF6612

DirectFET

Abstract: marking code V6 73 DIODE 94365E Power MOSFET 11.5m@VGS = 7.0V 13m@VGS = 4.5V MQ Applicable DirectFET Outline and , IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 92 1.2 47 39 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C , < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90% VDS
International Rectifier
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DirectFET marking code V6 73 DIODE IRF6621

irf6603tr1

Abstract: mosfet 4800 PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse , Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10
International Rectifier
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irf6603tr1 IRF660
Abstract: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the , â'"â'"â'" 26 39 nC 2 Ù MOSFET symbol A D G TJ = 25°C, IF = 9.6A di/dt = , 20V + V - DD IAS A 0.01â"¦ tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS , < 1µs Duty Factor < 0.1% 50Kâ"¦ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF International Rectifier
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94365C
Abstract: PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM , Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID Current Sampling International Rectifier
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IRF6601TR1

Abstract: mosfet 4800 PD - 94366F IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , MOSFET symbol ­­­ 0.83 V Reverse Recovery Time ­­­ 60 90 ns Reverse Recovery , . Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS , Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. +
International Rectifier
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IRF6601TR1

MQ 132

Abstract: IRF6602 PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , 200 A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single , 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90
International Rectifier
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MQ 132 IRF6602TR1

IRF6602

Abstract: IRF6602TR1 PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit
International Rectifier
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IRF6603

Abstract: IRF6603TR1 PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , . Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS
International Rectifier
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603TR1
Abstract: PD - 94366E IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , MT Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the , junction diode. TJ = 25°C, IS = 21A, VGS = 0V A â'"â'"â'" Conditions MOSFET symbol â'"â'"â , Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS VGS 20V , Factor < 0.1% 50Kâ"¦ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V International Rectifier
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Abstract: PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Application Specific MOSFETs l , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , 380 1.2 62 77 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , . Unclamped Inductive Test Circuit 50 V(BR)DSS tp 0 25 50 75 100 125 150 Starting Tj, Junction , Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90 International Rectifier
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IRF6604TR1

Abstract: IRF6604 Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction , Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L , . VGS Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit
International Rectifier
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IRF6604TR1

24v 12v 20A regulator

Abstract: IRF6607 PD - 94574B IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS
International Rectifier
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24v 12v 20A regulator IRF6607TR1 6607TR1
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