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1600092468A GE Critical Power J2014003L002 I2C SHELF FOR CP300 visit GE Critical Power
1600098385A GE Critical Power J2014003L001A I2C SHELF FOR CP30 visit GE Critical Power
J2014003L001A GE Critical Power J2014003L001A I2C SHELF FOR CP30 visit GE Critical Power
J2014003L002 GE Critical Power J2014003L002 I2C SHELF FOR CP300 visit GE Critical Power
J2014003 GE Critical Power Compact Power Line Shelves, Dual I2C shelves for the CP3500 rectifier visit GE Critical Power
PIM400KZ GE Critical Power PIM400 Series; ATCA Board Power Input Module, -36 to -75 Vdc; 400W/10A, I2C Digital Interface visit GE Critical Power

mosfet 4800 circuit

Catalog Datasheet MFG & Type PDF Document Tags

1262-33

Abstract: IXTP44N10T . The DCB can be patterned like a printed circuit board, which enables the unique integration , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL
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mosfet 4400

Abstract: mosfet 20n60 Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET. HDMOS II , MOSFET. It also features enhancements to the MOSFET cell design which significantly improve dv/dt
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OCR Scan

4800 8pin mosfet

Abstract: AC-DC Controllers : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn-off circuit. The photovoltaic diode array is a series-connected group of photo sensitive diodes which , , which then responds with a self-generated open circuit voltage, Voc, proportio nal to the LED input , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability
Dionics
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SJ 76 A DIODE EMI

Abstract: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF
International Rectifier
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Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï'·ï'  Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @ International Rectifier
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Abstract: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features â'¢ Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute International Rectifier
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mosfet 4800

Abstract: 4800 mosfet LTP70N06 N-Channel 60V Power MOSFET Test Circuit and Waveform 05 LTP70N06 N-Channel 60V Power , LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , area b. Starting Tj=25, ID=30A, VDD=37.5V 01 LTP70N06 N-Channel 60V Power MOSFET Electrical , =25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 102 VDS=30V, RG , Integral reverse PN diode in The MOSFET V IS=70A , VGS = 0V Note: Pulse test: pulse width
Lite-On Technology
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mosfet 4800 4800 mosfet 4800 power mosfet 4800 N-channel mosfet mosfet 4800 circuit 4800 power mosfet datasheet

mosfet 4800 circuit

Abstract: existing Surface Mount Techniques l IRF6603 Qg(typ.) 48nC PD - 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , . Unclamped Inductive Test Circuit V(BR)DSS tp 40 20 0 25 50 75 100 125 150 Starting Tj, Junction , < 1µs Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS
International Rectifier
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AN-1035 IRF6612

DirectFET

Abstract: marking code V6 73 DIODE 94365E Power MOSFET 11.5m@VGS = 7.0V 13m@VGS = 4.5V MQ Applicable DirectFET Outline and , IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 92 1.2 47 39 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C , < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90% VDS
International Rectifier
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DirectFET marking code V6 73 DIODE IRF6621

irf6603tr1

Abstract: mosfet 4800 PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse , Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10
International Rectifier
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irf6603tr1 IRF660
Abstract: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the , â'"â'"â'" 26 39 nC 2 Ù MOSFET symbol A D G TJ = 25°C, IF = 9.6A di/dt = , 20V + V - DD IAS A 0.01â"¦ tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS , < 1µs Duty Factor < 0.1% 50Kâ"¦ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF International Rectifier
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94365C
Abstract: PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM , Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID Current Sampling International Rectifier
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IRF6601TR1

Abstract: mosfet 4800 PD - 94366F IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , MOSFET symbol ­­­ 0.83 V Reverse Recovery Time ­­­ 60 90 ns Reverse Recovery , . Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS , Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. +
International Rectifier
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IRF6601TR1

MQ 132

Abstract: IRF6602 PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , 200 A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single , 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90
International Rectifier
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MQ 132 IRF6602TR1

IRF6603

Abstract: IRF6603TR1 PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , . Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS
International Rectifier
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603TR1

IRF6602

Abstract: IRF6602TR1 PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit
International Rectifier
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Abstract: PD - 94366E IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , MT Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the , junction diode. TJ = 25°C, IS = 21A, VGS = 0V A â'"â'"â'" Conditions MOSFET symbol â'"â'"â , Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS VGS 20V , Factor < 0.1% 50Kâ"¦ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V International Rectifier
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Abstract: PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Application Specific MOSFETs l , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , 380 1.2 62 77 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , . Unclamped Inductive Test Circuit 50 V(BR)DSS tp 0 25 50 75 100 125 150 Starting Tj, Junction , Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90 International Rectifier
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IRF6604TR1

Abstract: IRF6604 Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction , Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L , . VGS Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit
International Rectifier
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IRF6604TR1

24v 12v 20A regulator

Abstract: IRF6607 PD - 94574B IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS
International Rectifier
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24v 12v 20A regulator IRF6607TR1 6607TR1
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