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Part Manufacturer Description Datasheet BUY
BMS4007-1E ON Semiconductor N-Channel Power MOSFET, 75V, 60A, 7.8mΩ, TO-220ML(LS), TO-220ML(LS), 50-TUBE visit Digikey
NVLJD4007NZTBG ON Semiconductor Power MOSFET 30V, 245mA, 7 Ohm, Dual N-Channel, WDFN6 with ESD Protection, Logic Level., WDFN6 2x2, 0.65P, 3000-REEL visit Digikey
NVLJD4007NZTAG ON Semiconductor Power MOSFET 30V, 245mA, 7 Ohm, Dual N-Channel, WDFN6 with ESD Protection, Logic Level., WDFN6 2x2, 0.65P, 3000-REEL visit Digikey
4007W2PAM61A10X Conec Corporation D Subminiature Connector visit Digikey
4007W2SAM61A10X Conec Corporation D Subminiature Connector visit Digikey
400718-000 TE Connectivity Ltd MOLDED PARTS visit Digikey

mosfet 4007

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Charging Current Monitor Output Available in a 24-Pin Narrow SSOP Package The LTC®4007 is a complete , 26.7k 4007 TA01 4007f 1 LTC4007 U U W W W Voltage from DCIN, CLP, CLN to GND , DEMOBOARD VCHARGE = 12.6V VIN = 15VDC CHARGER = ON PFET = 1/2 Si4925DY ICHARGE = , ) 4007 G02 4007 G03 Disconnect/Reconnect Battery (Load Dump) PWM Frequency vs Duty Cycle 1A , 12.6V (3C4C = GND, CHEM = OPEN) 4007 G04 DCIN = 20V VFLOAT = 12.6V 4007 G06 4007 G05 1A Linear Technology
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4007 mosfet 4007 IC mosfet 4007F LTC-07 diode 4007 DATA specification SHEET Si4431DY LT1769 LTC1778 LTC1960 LTC3711 LTC4006 LTC4008
Abstract: Faults Charging Current Monitor Output Available in a 24-Pin Narrow SSOP Package The LTC®4007 is a , 6.04k 0.12ÂuF 0.0047ÂuF Q1: Si4431DY Q2: FDC6459 26.7k 4007 TA01 4007fc 1 LTC4007 , 4007 G01 15 17 19 21 23 25 VDCIN (V) 27 29 31 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 OUTPUT CURRENT (A) 4007 G02 4007 G03 Disconnect/Reconnect Battery (Load Dump , 1A, 2A, 3A DCIN = 20V VFLOAT = 12.6V (3C4C = GND, CHEM = OPEN) 4007 G04 DCIN = 20V VFLOAT = Linear Technology
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IC 4007 LTC1729
Abstract: DESCRIPTION The LTC®4007 is a complete constant-current/constantvoltage charger controller for 3- or 4 , 20F 4007 TA01 4007fb 1 LTC4007 ABSOLUTE MAXIMUM RATINGS (Note 1) PIN CONFIGURATION , 15VDC CHARGER = ON PFET = 1/2 Si4925DY ICHARGE = , 2.5 3.0 3.5 4.0 4.5 OUTPUT CURRENT (A) 4007 G03 4007 G02 PWM Frequency vs Duty Cycle 350 300 , 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 DUTY CYCLE (VOUT/VIN) 4007 G04 Disconnect/Reconnect Linear Technology
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APPLICATION OF IC 4007
Abstract: Output Available in a 24-Pin Narrow SSOP Package The LTC®4007 is a complete constant-current , CURRENT MONITOR ITH 6.04k 0.12uF 0.0047uF Q1: Si4431DY Q2: FDC6459 26.7k 4007 TA01 , ON PFET = 1/2 Si4925DY ICHARGE = Linear Technology
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LTC4007EGN LTC07 439k free IN 4007 marcon Capacitors 12v 100 amp battery load
Abstract: Charging Current Monitor Output Available in a 24-Pin Narrow SSOP Package The LTC®4007 is a complete , Q2: FDC6459 26.7k 4007 TA01 4007fc 1 LTC4007 ABSOLUTE MAXIMUM RATINGS PIN , VCHARGE = 12.6V VIN = 15VDC CHARGER = ON PFET = 1/2 Si4925DY ICHARGE = , CURRENT (A) 4007 G02 4007 G03 Disconnect/Reconnect Battery (Load Dump) PWM Frequency vs Duty , 20V VFLOAT = 12.6V (3C4C = GND, CHEM = OPEN) 4007 G04 DCIN = 20V VFLOAT = 12.6V 4007 G06 Linear Technology
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4007 IC DATASHEET mosfet 10A PWM Charger ntc thermistor 10k 12v ac to dc mobile charger circuit thermistor ntc 60 0250
Abstract: and Faults Charging Current Monitor Output Available in a 24-Pin Narrow SSOP Package The LTC®4007 , CURRENT MONITOR ITH 6.04k 0.12uF 0.0047uF Q1: Si4431DY Q2: FDC6459 26.7k 4007 TA01 , by an internal N-channel MOSFET. Internal 10uA pull-up to 3.5V. If VLOGIC is greater than 3.3V, add , charging. This pin is pulled low by an internal N-channel MOSFET if DCIN is below BAT. A pull-up resistor , opencollector/drain logic levels. TGATE (Pin 20): Drives the top external P-channel MOSFET of the battery Linear Technology
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107 6K tantalum capacitors PTC 970 PTC 3k thermistor conversion table marcon capacitor nc
Abstract: FSEZ1016A - Primary-Side-Regulation PWM Integrated Power MOSFET March 2009 FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET Features Constant-Voltage (CV) and Constant-Current (CC , www.fairchildsemi.com FSEZ1016A - Primary-Side-Regulation PWM Integrated Power MOSFET Application Diagram , Primary-Side-Regulation PWM Integrated Power MOSFET Marking Information F - Fairchild Logo Z - Plant Code X ­ 1 , . Power MOSFET Drain. This pin is the high voltage power MOSFET drain. © 2008 Fairchild Semiconductor Fairchild Semiconductor
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Z1016A 5W battery charger MS-012 M07AREV2
Abstract: against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines , 400 280 CGRA 4005-G 600 600 420 CGRA 4006-G 800 800 560 CGRA 4007-G 1000 1000 700 Units V V V IFSM , CGRA4005-G CGRA4006-G CGRA4007-G Marking Code 4001 4002 4003 4004 4005 4006 4007 Product type marking code Comchip Technology
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CGRA4001-G MARKING CODE TL DO-214AC 4007 DO-214AC SMD mosfet MARKING code TJ 4007 SMD SMD Marking 4001 DO-214AC MIL-STD-750 4001-G 4002-G QW-BG002
Abstract: signal is offered in preheat state to meet low power loss application which usually needs a MOSFET to , MOSFET. After this period, it is discharged to Vfault (reset2). Then it is used as a fault timer to stop , 10nF to 100nF) between this pin and SW pin. Half bridge up side MOSFET driver. Half bridge floating middle point. Half bridge current sensor. Half bridge low side MOSFET driver. 14 15 16 VCC GND , low side MOSFET will be turned off quickly while high side MOSFET will not be affected. This results Monolithic Power Systems
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Zener Diode ph 4148 ph 4148 zener diode ANALOG zener PH 4148 ph 4148 zener diode working of 1N 4007 DIODE HR2000 SOIC16
Abstract: protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET , 4007-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 , CGRA4007-G C:Comchip Logo Marking Code 4007 A:Package C A XXXX XXXX : Product Type Comchip Technology
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4003-G 4004-G 4007-G CGRA4002-G CGRA4003-G CGRA4004-G
Abstract: protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET , 4007-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 , CGRA4006-G 4006 CGRA4007-G C:Comchip Logo Marking Code 4007 A:Package C A XXXX Comchip Technology
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Abstract: protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET , 4007-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 , CGRA4007-G Package: Marking Code 4007 C X A B C X XXXX PKG SMA SMB SMC Comchip Technology
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Abstract: 0.998 399.0 3.81 140 0.997 399.7 4.11 160 0.996 400.7 4.85 180 0.995 400.7 5.60 200 0.993 400.7 6.51 220 0.990 401.0 7.45 240 0.986 401.0 , Loop Area Gate Resistor MOSFET 7 FAN7527B 3 6 4 5 Gate Drive Line Length , limits the overshoot of the power MOSFET gate drive. It greatly enhances the system reliability Fairchild Semiconductor
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FEB112-001 AN-42047 ei3026 EI-3026 12 v 100w power amp diagram GBU45 diode bridge bd1 4a 600V AN-4127
Abstract: 'C) MOS-FET Control Stage Vref lo Tstg DC Characteristics Type No. Power Stage TTL Control Stage , =25'C) Remarks Fig. No. DC Characteristics AC Characteristics MOS-FET VDS(ON)(V) MOS-FET loss(mA , ) at Id=1A MOS-FET Body diode Vsd(V) Switching Time trtos) tstgl/is) tH»s) max max max max min max min max max typ typ typ 0.6 4 40 -0.8 2.0 0.8 2.0 0.8 1.1 0.5 0.7 0.1 MOS-FET in , b! -
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STR90050 SI-3052V STR9005 SI-3052P STR2005 SI-7200E diode IN 4007 YJ 7230M 3122V 90090 8301l 3122P
Abstract: Drivers Maximum Ratings (Ta=25'C) Electrical Characteristics (Ta = 25'C) MOS-FET Control , . DC Characteristics AC Characteristics MOS-FET VDS(ON)(V) MOS-FET loss(mA) TTL IihCuA , =1A MOS-FET Body diode Vsd(V) Switching Time trtos) tstgl/is) tH»s) max max max max min max min max max typ typ typ 0.6 4 40 -0.8 2.0 0.8 2.0 0.8 1.1 0.5 0.7 0.1 MOS-FET in Power Stage 11 SI , + I jr-.f-. I I?.55t°? j »4.0=0.7 TTT a|sr to.65igi N. Trfic»+0^ 6 3AQ-9 tl-H:+1 -4-UU3-0.1 -
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SI-8301L 3152V SI-7230M SLA7020M SI-7230E 3242P SI-6201L
Abstract: on ICs, MOSFET, signal lines ofsensor units for consumer, computer, industrial, automotive and , 4001-G CGRA 4002-G CGRA 4003-G CGRA 4004-G CGRA 4005-G CGRA 4006-G CGRA 4007-G Units Max. repetitive -
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cgra4007 1000V
Abstract: suited for driving a power MOSFET. Also included are protective features consisting of input , line. This has the effect of forcing the MOSFET peak current to track the input line voltage, thus , MOSFET cannot turn on until the inductor current reaches zero, the output rectifierâ'™s reverse recovery , rupture of the MOSFET gate when V c c exceeds 20 V. Table 1. Design Equations Calculation Notes , 187.5 -0.998 2.0 0.10 0.98 0.90 0.78 8.0 400.7 0.436 174.7 93.2 120 -
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MC34261 MC33261 MC34261/MC33261 SG3561 TDA4817 PT4215
Abstract: reference, current sensing comparator, and a totem pole output ideally suited for driving a power MOSFET , voltage traverses sinusoidally from zero to peak line. This has the effect of forcing the MOSFET peak , benefits. First, since the MOSFET cannot turn on until the inductor current reaches zero, the output , 400.7 400.7 400.7 400.6 400.6 400.6 'o 0.436 0.436 0.436 0.436 0.436 0.436 Po 174.7 174.7 174.7 -
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4006 transformer PT2510 T-328 5903B 03DPCG5 T3-28-2 9000C
Abstract: suited for driving a power MOSFET. Also included are protective features consisting of input , effect of forcing the MOSFET peak current to track the input line voltage, thus making the preconverter , operation has two significant benefits. First, since the MOSFET cannot turn on until the inductor current , stage to limit the high state VOH. This prevents rupture of the MOSFET gate when VCC exceeds 20 V , 0.90 0.78 8.0 400.7 0.436 174.7 93.2 120 184.6 -0.997 1.8 0.09 1.3 ON Semiconductor
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14n50e zero crossing detector ic with 230v 230V AC to 5V DC ic transformer from 230V AC to 5V DC Coilcraft N2881-A transformer from 230V AC to 5V MC34261/D
Abstract: reference, current sensing comparator, and a totem pole output ideally suited for driving a power MOSFET , zero to peak line. This has the effect of forcing the MOSFET peak current to track the input line , operation has two significant benefits. First, since the MOSFET cannot turn on until the inductor current , prevents rupture of the MOSFET gate when V c c exceeds 20 V. Table 1. Design Equations Calculation , n(%) 90 187.5 -0.998 2.0 0.10 0.98 0.90 0.78 8.0 400.7 0.436 -
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