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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

mosfet 1200V 40A

Catalog Datasheet MFG & Type PDF Document Tags

IRU1239SC

Abstract: iru1239 MTK MODULES 3 1200V 100.000A MTK MODULES 3 1200V 100.000A MTK MODULES 3 1600V 100.000A MTK MODULES , Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1400V 3 Phase Bridge in a , 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 , 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1200V 3 Phase Bridge in a INT-A-Pak
Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview , 1200V isolation in a small package outline â'¢ High blocking voltage with low RDS(on) â'¢ Reduction of heat sink requirements â'¢ High current 40A â'¢ High temperature 210 C O â'¢ RoHS , MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Electrical Characteristics Symbols V(BR)DSS y r , =210oC IDSS 1.3 VDS=1200V, VGS=0V, TJ=25oC 0.8 100 VDS=1200V, VGS=0V, TJ=210oC 10 450 Micross Components
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MIL-PRF-19500

95A sensor hall

Abstract: celduc d31c2110 1200V Control voltage Input R 4-30VDC 12-30VDC 5-30VDC I2t Protec. Dimensions mm , 600V 1200V Control voltage 4-30VDC 5-30VDC Input R Dimensions mm I2t 312A2s 312A2s , 24-510VAC 24-510VAC 24-510VAC 24-510VAC 24-510VAC Peak voltage 600V 600V 1200V 1200V 1200V 1200V 1200V Control voltage Control current 3-32VDC 3-32VDC 3,5-32VDC 3,5-32VDC 3 , 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V
Celduc Relais
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95A sensor hall celduc d31c2110 d31c2110 sensor hall 95A D41A3100L HALL 95A

10-FZ06NBA075SA-P916L33

Abstract: V23990-P629-F68-PM 1200V 2x 120mâ"¦ 2x 40A Symmetric Booster (IGBT) â'¢ Semikron Equivalent CoolMOSTM , Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , -FZ06NBA075SA-P916L33 2x 600V 75A IGBT3 â'¢ 600V devices are used to provide 1200V total voltage capability at increased speed and with reduced losses Power Modules Dual Booster (MOSFET) All booster modules
Vincotech
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10-FZ06NBA075SA-P916L33 V23990-P621-F68-PM 10-FZ06NBA045FH-P915L 10-FZ06NBA030SA-P914L33 10-FZ06NBA050SA-P915L33

"VDSS 800V" 40A mosfet

Abstract: APTMC120AM20CT1AG APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 20m max @ Tj = 25°C ID = , Tj = 25°C IF = 40A Tj = 175°C IF = 40A, VR = 1200V di/dt = 1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR , Power Supplies · Motor control Features · SiC Power MOSFET - Low RDS(on) - High temperature performance , together All ratings @ Tj = 25°C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET , Junction to Case Thermal Resistance Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 100A Tj
Microsemi
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mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V
Abstract: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application â'¢ Uninterruptible Power Supplies Features â'¢ SiC Power MOSFET - Low RDS(on) - High temperature performance â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ SiC , specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) IDM VGS RDSon PD Continuous Drain , Symbol VDSS APTMC60TLM55CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET) Symbol Microsemi
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APTMC120AM55CT1AG

Abstract: 800V 40A mosfet APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 55m max @ Tj = 25°C ID = , Power Supplies · Motor control Features · SiC Power MOSFET - Low RDS(on) - High temperature performance , together All ratings @ Tj = 25°C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET , Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1200V Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C VGS = 20V ID = 40A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Test Conditions VGS =
Microsemi
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mosfet 1200V 40A

Abstract: 1200v mosfet converter Boost converter IGBT Device Ratings: · · Voltage - 600V or 1200V Current - up to 200A MOSFET Device Ratings: · · Voltage-60V to 1200V Current - up to 300A at 60V; up to 40A at 1200V Power Device , SENSITRON SEMICONDUCTOR 1998 · SHORT FORM CATALOG - Revision INDUSTRIAL IGBT / MOSFET POWER MODULES Introducing Sensitron's new line of industrial power modules ! · · · · Sensitron is capable of providing power modules that satisfies all electrical / mechanical requirements Sensitron is capable of
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OCR Scan
1200v mosfet mosfet 1200V powerex power Modules fuji semiconductor catalog

mosfet 1200V 40A

Abstract: Silicon MOSFET 1000V MOSFET DC Parameters BVDSS @ 3mA 1600V 1200V 1000V VGE(th) @ 4mA 5-9V 4-8V , 1000V MOSFET (IXFH12N100) and a 1200V DMOS constructed, SCSOA rated IGBT (IXSH35N120A), all three parts , 1200V IGBT and 1000V MOSFET. - , ) MOSFET, IXYS coined the acronym BiMOSFETTM to distinguish this new class of switches. Rated at 1600V, its RDS(on) is less than 10% of an equivalent voltage rated MOSFET yet it has a switching time of
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IXBH40N160 Silicon MOSFET 1000V igbt testing pnp 1000V 2A mosfet 1500v MOSFET 1200v 3a IGBT Transistor 1200V, 25A

IXAN0016

Abstract: pnp 1200V 2A 1200V IGBT and 1000V MOSFET. IXAN0016 - , very low RDS(on) MOSFET, IXYS coined the acronym BiMOSFETTM to distinguish this new class of switches. Rated at 1600V, its RDS(on) is less than 10% of an equivalent voltage rated MOSFET yet it has a , . IXYS has developed a new 40A, 1600V, homogeneous base IGBT to fulfill this need for a faster and , grown on top of a large, low resistivity silicon substrate. However, at voltages in excess of 1200V
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pnp 1200V 2A pnp transistor 1000v snubber CIRCUITS mosfet mosfet 1000v mosfet 20a 600v 50kHz 35N120A

MOSFET 40A 600V

Abstract: 800V 40A mosfet APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55m @ Tj = 25°C Application · Uninterruptible Power Supplies Features · SiC Power MOSFET - Low , °C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) Tc = 25°C Tc = 80 , APTMC60TLM55CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET) Symbol Characteristic IDSS RDS(on) VGS(th , Leakage Current Test Conditions VGS = 0V VDS = 1200V Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150
Microsemi
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MOSFET 40A 600V

mosfet 1200V 40A

Abstract: MOSFET 40A 600V 500 2.03 2.60 V IF = 50A IF = 40A 2.66 2.49 VGE = 0v, VCE = 1200V, TJ =125°C , VGE = 0V,VCE = 1200V 15 ICES Ref. Fig. V/OC VGE = 0V, Ic = 1 mA ( 25 -125 C ) IC = 40A , 1200V Rg = 22, VGE = +15V to 0 V o TJ = 125 C VCC = 600V, IF = 40A VGE = 15V, Rg = 4.7, L , TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features · Low VCE(on) Non Punch , VCE(on) typ. = 3.12V G @VGE = 15V, IC = 40A E TJ = 25°C n-channel Benefits · Benchmark
International Rectifier
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IRGPS40B120UD ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V Diode 1200V 40A 4772 mosfet driver 5M-1994

mosfet 1200V 40A

Abstract: mosfet 1200V 30a smps Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions , www.intersil.com/igbt - HGTG20N60C3 - 15 ~ 40A With Intersil IGBTs you won't be faced with the , MOSFET solutions are no longer needed when you can design-in the efficiency of an IGBT. - , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE
Intersil
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HGTD3N60A4S HGTD3N60C3S HGTD3N60B3S HGTP20N60A4 mosfet 1200V 30a smps igbt 20A 1200v Igbts guide HGTG11N120CND MOSFET 1200v 30a LC-96585 HGT1S3N60A4S HGT1S3N60A4DS HGTP3N60B3
Abstract: VR=1200V DC Forward Current Tc = 125°C VF Diode Forward Voltage IF = 40A Tj = 25 , Reverse Leakage Current 128 224 40 1.6 2.3 IF = 40A, VR = 1200V di/dt =1600A/µs µA A , APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application â'¢ Welding converters â'¢ Switched Mode Power Supplies â'¢ Uninterruptible Power Supplies â'¢ Motor control Features â'¢ SiC Power MOSFET - High speed Microsemi
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APT0502

800V 40A mosfet

Abstract: mosfet 1200V 40A Total Capacitance Junction to Case Thermal Resistance IF = 40A Test Conditions VR=1200V Tj = 25°C Tj = , Unit V µA A V nC pF °C/W APT100MC120JCU2 ­ Rev 0 November, 2012 IF = 40A, VR = 1200V di/dt =1000A , APT100MC120JCU2 ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module K VDSS = 1200V RDSon = 20m max @ Tj = 25°C ID = 102A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction · Brake switch Features · SiC Power MOSFET Low RDS
Microsemi
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Abstract: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49mΩ max @ Tj = 25 , ; VDS = 1200V Tj = 25°C VGS = 20V ID = 40A Tj = 150°C VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V , '¢ Uninterruptible Power Supplies â'¢ Motor control Features â'¢ SiC Power MOSFET - Low RDS(on) - High , °C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET) Absolute maximum ratings IDM , = 0V VDS = 1000V f = 1MHz Min Typ 1900 160 13 98 VGS= 20V VBus = 800V ID = 40A Microsemi
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GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor 2009 Quick Reference Guide G IGBTs G MOSFET MODULES G IPMs G G DIPIPM G G G ACCESSORIES G , MOSFET Modules Applications Include: G Chopper G Forklifts G Off-Road Electric Vehicles G Power , Undervoltage (UV) Lockout G Short Circuit (SC) Protection VOLTAGE: 600V TO 1200V CURRENT: 3A TO 75A , Designed for Driving IGBTs with Ratings up to 1400A/1200V and 2400A/1700V G SBS for Driving Triacs G , Studs PHASE CONTROL SCRs: VOLTAGE: 100V TO 6500V CURRENT: 40A TO 5000A INVERTER GRADE SCRs: VOLTAGE
Powerex
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GTO thyristor 1200V 50A scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A
Abstract: '. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ , 600V to 1200V. TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require , highly decrease power losses in any associated switching IGBT or MOSFET in all â'Freewheel Modeâ , diodes. Packaged in ISOTOP®, this 1200V device is particularly intended for use on 3 phase 400V , Peak forward voltage Min Tj = 25°C If =25A, dlp/dt = 200 AJfis If =40A, dlF/dt = 500 A/jis -
OCR Scan
STTA5012T

tyco igbt module 25A

Abstract: 2kw pfc covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V. Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V. fastPACK 0 H 2nd gen W W , ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A , ) V23990-P729-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V P723-P729 Current
Vincotech
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tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A mosfet 600V 30A 2kw mosfet P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1

MOSFET circuit welding INVERTER

Abstract: MOSFET welding INVERTER TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs MOSFET , 2400A MOSFET MODULES Applications Include: Forklift UPS Off-Road EV Power Supplies Chopper , ) Lockout Gate Drive VOLTAGE: 600V TO 1200V CURRENT: 3A TO 50A TM www.pwrx.com Call the Power , SCRs: VOLTAGE: 200V TO 6500V CURRENT: 40A TO 5000A INVERTER GRADE SCRs: VOLTAGE: 200V TO 2500V CURRENT: 40A TO 3000A TM www.pwrx.com Call the Power Line at 1-800-451-1415 DISCRETE
Powerex
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600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter
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