NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: OPERATION In order to implement a short circuit protection the output power MOS is driven in linear mode to , 8V TO 35V SUPPLY VOLTAGE RANGE s NON DISSIPATIVE SHORT CIRCUIT PROTECTION s THERMAL , output voltage slew rate and non dissipative short circuit protection. An internal Clamping Diode , unique feature Non Dissipative Short Circuit Protection and it ensures a very safe operation even in , Dissipative Short Circuit Protection can be disabled (keeping Ton = 0 but with the output current still ... | Original |
12 pages, |
SO20 L6375D L6375 L6375 abstract |
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| Abstract: CURRENT OPERATION In order to implement a short circuit protection the output power MOS is driven in , 8V TO 35V SUPPLY VOLTAGE RANGE s NON DISSIPATIVE SHORT CIRCUIT PROTECTION s THERMAL , output voltage slew rate and non dissipative short circuit protection. An internal Clamping Diode , unique feature Non Dissipative Short Circuit Protection and it ensures a very safe operation even in , Dissipative Short Circuit Protection can be disabled (keeping Ton = 0 but with the output current still ... | Original |
12 pages, |
SO20 L6375D L6375 L6375 abstract |
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| Abstract: 2.5 3 3.5 4 4.5 VIN (V) 5 5.5 6 TA = 25°C 2.2. Short Circuit Protection , value set; - if a short circuit occurs; - if the devices goes in thermal protection. The FAULT pin , , as shown in figure 2.2. Figure 2.2: ST890 ST890 In A Short Circuit Condition CH1: VIN voltage, AC , feedback it is possible to limit the output current at ILIMIT. When a short circuit occurs, the VSET drops , control is not possible. To ensure current limitation, even in short circuit conditions, the error ... | Original |
9 pages, |
ST890 ST7263 measurment and display AN1441 usb port amplifier circuit diagram AN1441 abstract |
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| Abstract: 3.5 4 4.5 VIN (V) 5 5.5 6 TA = 25°C 2.2. Short Circuit Protection. The low , 2.2. Figure 2.2: ST890 ST890 In A Short Circuit Condition CH1: VIN voltage, AC Coupled. CH2: Output , it is possible to limit the output current at ILIMIT. When a short circuit occurs, the VSET drops , control is not possible. To ensure current limitation, even in short circuit conditions, the error , IOUT (CH2) VOUT (CH1) OUT 100nF Short GND 4 5 SET RLOAD RSET circuit resistor ... | Original |
8 pages, |
usb port amplifier circuit diagram ST890 ST7263 AN1441 AN1441 abstract |
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| Abstract: the ILIMIT value set; - if a short circuit occurs; - if the devices goes in thermal protection. The , 2.5 3 3.5 4 4.5 VIN (V) 5 te le 6 ro P TA = 25°C 2.2. Short Circuit Protection uc d 5.5 s) t( The low resistance of the MOS channel is important; however, the , In A Short Circuit Condition du o Pr e let o bs O 2/9 CH1: VIN voltage, AC , feedback it is possible to limit the output current at ILIMIT. When a short circuit occurs, the VSET drops ... | Original |
9 pages, |
ST890 ST7263 AN1441 AN1441 abstract |
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| Abstract: 8V TO 35V SUPPLY VOLTAGE RANGE s NON DISSIPATIVE SHORT CIRCUIT PROTECTION s THERMAL , output voltage slew rate and non dissipative short circuit protection. An internal Clamping Diode , Lamp (a cold filament has a very low resistive value). The Non Dissipative Short Circuit Protection can , schematic. s ESD PROTECTION (HUMAN BODY MODEL ±2KV) The L6375 L6375 is a monolithic fully protected, full , SHORT CIRCUIT Con CURRENT LIMITATION OPEN LOAD DETECTION OSC OUTSTATUS DIAG1 DIAGNOSTIC ... | Original |
12 pages, |
SO20 l6375d application L6375D L6375 L6375 abstract |
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| Abstract: current operation In order to implement a short circuit protection the output power MOS is driven in , Non dissipative short circuit protection Immunity against burst transient (IEC 61000-4-4 , controlled output voltage slew rate and short circuit protection. An internal Clamping Diode enables the , We call this unique feature Non Dissipative Short Circuit Protection and it ensures a very safe , resistive value). The Non Dissipative Short Circuit Protection can be disabled (keeping Ton = 0 but with ... | Original |
16 pages, |
SO20 L6375DTR l6375d application L6375D JESD97 L6375D abstract |
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| Abstract: status LED driver Non dissipative short circuit protection Immunity against burst transient , resistive loads with controlled output voltage slew rate and short circuit protection. An internal , circuit protection the output power MOS is driven in linear mode to limit the output current to the Isc , interval duration during short circuit operation L6375S L6375S Electrical specifications 2 Electrical , Internal voltage clamp (Vs-Vout) Io = 200mA single pulsed = 300ms Isc Short circuit output ... | Original |
17 pages, |
L6375STR L6375S JESD97 L6375S abstract |
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| Abstract: to implement a short circuit protection the output power MOS is driven in linear mode to limit the , Non dissipative short circuit protection Immunity against burst transient (IEC 61000-4-4 , inductive or resistive loads with controlled output voltage slew rate and short circuit protection. ESD , Non Dissipative Short Circuit Protection and it ensures a very safe operation even in permanent , dissipative short circuit protection can be disabled (keeping Ton = 0 but with the output current still ... | Original |
16 pages, |
SO20 L6375DTR L6375D L6375D abstract |
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| Abstract: status LED driver Non dissipative short circuit protection Immunity against burst transient , resistive loads with controlled output voltage slew rate and short circuit protection. An internal , circuit protection the output power MOS is driven in linear mode to limit the output current to the Isc , inverting input Programmable ON time interval duration during short circuit operation L6375S L6375S , Slew rate (rise and fall edge) tON On time during short circuit condition tOFF fmax 7 ... | Original |
17 pages, |
L6375STR L6375S JESD97 L6375S abstract |
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| .C. motor applications. Figure 1 : A Schematic Cross Section of Bipolar, C-MOS, DMOS Structures (BCD (DMOS 1') is "off" and DMOS 2 (DMOS 2') is "on". A thermal protection circuit has been included that NOTE 2/7 Figure 3 : L6202-6203 L6202-6203 L6202-6203 L6202-6203 Block Diagram. Figure 4 : A Schematic Representation of ON-OFF Synchronism Circuit. APPLICATION NOTE 3/7 Figure 5 : POWER MOS Gate Voltage Wave- forms. other and of frequencies. The circuit that satisfies to all these requirements is represented in the sche- matic diagram of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1676-v2.htm |
STMicroelectronics | 14/06/1999 | 13.23 Kb | HTM | 1676-v2.htm |
| Schematic Representation of ON-OFF Synchronism Circuit. APPLICATION NOTE 3/7 Figure 5 : POWER MOS control in D.C. motor applications. Figure 1 : A Schematic Cross Section of Bipolar, C-MOS, DMOS (DMOS 1') is "off" and DMOS 2 (DMOS 2') is "on". A thermal protection circuit has been included that pump and bootstrap circuits. Concerning POWER MOS driving, it must be noted that it is necessary to . Figure 6 : Schematic Representation of Charge PUMP and BOOSTRAP Circuit used to Drive the Gate of the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1676-v3.htm |
STMicroelectronics | 25/05/2000 | 15.1 Kb | HTM | 1676-v3.htm |
| " DMOS 1 (DMOS 1') is "off" and DMOS 2 (DMOS 2') is "on". A thermal protection circuit has been NOTE 2/7 Figure 3 : L6202-6203 L6202-6203 L6202-6203 L6202-6203 Block Diagram. Figure 4 : A Schematic Representation of ON-OFF Synchronism Circuit. APPLICATION NOTE 3/7 Figure 5 : POWER MOS Gate Voltage Wave- forms. other and of - matic diagram of fig. 6. In the description of this circuit we can assume that C BOOT is absent and implementation of monolithic circuits integrating logic functions and power sections. For these applications www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1676.htm |
STMicroelectronics | 20/10/2000 | 15.58 Kb | HTM | 1676.htm |
| .C. motor applications. Figure 1 : A Schematic Cross Section of Bipolar, C-MOS, DMOS Structures (BCD (DMOS 1') is "off" and DMOS 2 (DMOS 2') is "on". A thermal protection circuit has been included that NOTE 2/7 Figure 3 : L6202-6203 L6202-6203 L6202-6203 L6202-6203 Block Diagram. Figure 4 : A Schematic Representation of ON-OFF Synchronism Circuit. APPLICATION NOTE 3/7 Figure 5 : POWER MOS Gate Voltage Wave- forms. other and of frequencies. The circuit that satisfies to all these requirements is represented in the sche- matic diagram of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1676-v1.htm |
STMicroelectronics | 02/04/1999 | 13.27 Kb | HTM | 1676-v1.htm |
| .5A OUTPUT CURRENT n 8V TO 35V SUPPLY VOLTAGE RANGE n NON DISSIPATIVE SHORT CIRCUIT PROTECTION controlled output voltage slew rate and non dissipative short circuit protection. An internal Clamping SHORT CIRCUIT CURRENT LIMITATION OPEN LOAD DETECTION OUTSTATUS DIAGNOSTIC THERMAL PROTECTION operation at low supply voltage. OVER CURRENT OPERATION In order to implement a short circuit protection the DIAG2 pin (see fig 2). We call this unique feature Non Dissipative Short Circuit Protection www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7020.htm |
STMicroelectronics | 20/10/2000 | 16.72 Kb | HTM | 7020.htm |
| CURRENT OPERATION In order to implement a short circuit protection the output power MOS is driven in DISSIPATIVE SHORT CIRCUIT PROTECTION n THERMAL SHUTDOWN n OPEN GROUND PROTECTION n NEGATIVE short circuit protection. An internal Clamping Diode enables the fast demagnetization of inductive DIAGRAM UNDER VOLTAGE CHARGE PUMP DRIVER NON DISSIPATIVE SHORT CIRCUIT CURRENT the DIAG2 pin (see fig 2). We call this unique feature Non Dissipative Short Circuit Protection www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7020-v1.htm |
STMicroelectronics | 25/05/2000 | 15.8 Kb | HTM | 7020-v1.htm |
| impractical), 3) to make some fault detections e.g. detect short circuit or open load condition. For this , a driving circuit with a charge pump, an in- put logic interface and some protection and fault de circuit) and the junction temperature rises above 1555C 1555C 1555C 1555C a thermal protection circuit turns off the de . Diazzi, D. Rossi, S. Storti HIGH SIDE MONOLITHIC SWITCH IN Recent advances in integrated circuit (fig. 1). Figure 1 : Example of a Multiplexed System. 1/9 Figure 2 : Block Diagram of a Peripheral www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1701-v2.htm |
STMicroelectronics | 14/06/1999 | 14.4 Kb | HTM | 1701-v2.htm |
| impractical), 3) to make some fault detections e.g. detect short circuit or open load condition. For this , a driving circuit with a charge pump, an in- put logic interface and some protection and fault de circuit) and the junction temperature rises above 1555C 1555C 1555C 1555C a thermal protection circuit turns off the de . Diazzi, D. Rossi, S. Storti HIGH SIDE MONOLITHIC SWITCH IN Recent advances in integrated circuit (fig. 1). Figure 1 : Example of a Multiplexed System. 1/9 Figure 2 : Block Diagram of a Peripheral www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1701-v1.htm |
STMicroelectronics | 02/04/1999 | 14.44 Kb | HTM | 1701-v1.htm |
| impractical), 3) to make some fault detections e.g. detect short circuit or open load condition. For this protection and fault de- tection circuits. APPLICATION NOTE 5/9 THE POWER DMOS The power DMOS dimensioning of the device (fig. 8). If the high current condition persists (e.g. load short circuit) and the junction temperature rises above 1555C 1555C 1555C 1555C a thermal protection circuit turns off the de- vice MONOLITHIC SWITCH IN Recent advances in integrated circuit technology have allowed the realization of a www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1701.htm |
STMicroelectronics | 20/10/2000 | 16.83 Kb | HTM | 1701.htm |
| persists (e.g. load short circuit) and the junction temperature rises above 1555C 1555C 1555C 1555C a thermal protection short circuit or open load condition. For this reasons a simple electromechanic or elec- tronic element, a driving circuit with a charge pump, an in- put logic interface and some protection and fault Recent advances in integrated circuit technology have allowed the realization of a new mixed process 1 : Example of a Multiplexed System. 1/9 Figure 2 : Block Diagram of a Peripheral Unit www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1701-v3.htm |
STMicroelectronics | 25/05/2000 | 16.28 Kb | HTM | 1701-v3.htm |