NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PSMN005-75B /T3 | NXP Semiconductors | N-channel enhancement mode field-effect transistor | 
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| PSMN003-30B /T3 | NXP Semiconductors | N-channel enhancement mode field-effect transistor |
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| PSMN004-60B /T3 | NXP Semiconductors | N-channel enhancement mode field-effect transistor |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: VHF Mixer RF Ampi. RF Ampi. Mixer FM Ampi. Mixer VHF/UHF Ampi. VHF/UHF Ampi. VHF/UHF Ampi. Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Depl MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Junction Nch Junction Nch Junction , , Pch Enh. MOS TO-18 MFE824 MFE824 1 4 6.0 0.001 - 0.7 20 ' Electrometer ampl. Nch Enh. Depl. MOS TO-18 ... | OCR Scan |
1 pages, |
UHF Dual Gate 2N5460 2N5459 2N5457 2N4416 2N3824 2N3823 TO92 2N3823 2N3822 2n5462 2N5484 electrometer 3N128 2N5485 2N3821 datasheet abstract |
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| Abstract: 5.0 40 Nch Junction TO-18 300 1 5 0.01 1.3 25 Nch Enh. MOS TO-72 600 1 5 0.01 1.3 25 Pch Enh. MOS TO-72 30 4 10 0.1 50 150 3.5 40 Nch Junction TO-18 60 2 5 0.1 25 75 3.5 40 Nch Junction TO-18 , Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Junction Nch Depl MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS Nch Depl. Dual Gate MOS , Electrometer ampl. Nch Enh. Depl. MOS TO-18 MPF102 MPF102 2 7.5 8.0 2.0 - 3.0 25 Ampl.-Mixer Nch Junction TO-92 ... | OCR Scan |
2 pages, |
MFE130 fet to92 2N5639 MOTOROLA 2N5458 motorola 2N4393 2N5458 2N3994 Motorola 2N5459 2N3993 j fet 2n5457 2N5459 MOTOROLA 2N4220 MOTOROLA MPF102 switch application BF245C datasheet abstract |
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| Abstract: "" PDF 2005 PD166100 PD166100, 166101 IN1 OUT1 MOS (Nch) GND1 Ch1 IN2 OUT2 MOS Nch GND2 Ch2 PD166100 PD166100 Ch1 Top , MOS MOS Integrated Circuit PD166100 PD166100, 166101 N PD166100 PD166100, 166101 N mm , , 166101 CMOS CMOSVILMAX.VIHMIN. VIL MAX.VIHMIN. CMOS CMOS VDD GND MOS MOS MOS MOS OFF OFF OFF S17476JJ2V0DS S17476JJ2V0DS 11 PD166100 PD166100 ... | Original |
14 pages, |
PD166101 PD166100 datasheet abstract |
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| Abstract: "" PDF 2005 PD166100 PD166100, 166101 IN1 OUT1 MOS (Nch) GND1 Ch1 IN2 OUT2 MOS Nch GND2 Ch2 PD166100 PD166100 Ch1 Top , MOS MOS Integrated Circuit PD166100 PD166100, 166101 N PD166100 PD166100, 166101 N , , 166101 CMOS CMOSVILMAX.VIHMIN. VIL MAX.VIHMIN. CMOS CMOS VDD GND MOS MOS MOS MOS OFF OFF OFF S17476JJ2V0DS S17476JJ2V0DS 11 PD166100 PD166100 ... | Original |
12 pages, |
PD166101 PD166100 PD166100 abstract |
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| Abstract: input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch) turns on. When the output voltage of the input pin (IN) is low level (1.0 V or less), the output MOS (Nch) turns off. Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side. Over , This circuit detects over temperature by output MOS (Nch) driving, and feeds back detection signal to , circuit operates and output is shutdown. Output MOS (Nch) automatically restarts when channel temperature ... | Original |
17 pages, |
C11531E datasheet abstract |
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| Abstract: Control When the input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch , (Nch) turns off. Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to , temperature Detection Circuit This circuit detects over temperature by output MOS (Nch) driving, and feeds , function of the control circuit operates and output is shutdown. Output MOS (Nch) automatically restarts , DATA SHEET MOS INTEGRATED CIRCUIT PD166005 PD166005 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER ... | Original |
15 pages, |
C11531E PD166005 PD166005 abstract |
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| Abstract: Control When the input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch , (Nch) turns off. Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to , Circuit This circuit detects overtemperature by output MOS (Nch) driving, and feeds back detection signal , circuit operates and output is shutdown. Output MOS (Nch) automatically restarts when channel temperature , Preliminary Data Sheet PD166015GR PD166015GR R07DS0595EJ0100 R07DS0595EJ0100 Rev.1.00 Jan 19, 2012 MOS INTEGRATED ... | Original |
17 pages, |
PD166015GR PD166015GR abstract |
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| Abstract: VCC1 IN1 OUT1 MOS N-ch GND1 Ch 1 VCC2 OUT2 IN2 Ch 2 , MOS MOS Integrated Circuit PD166104 PD166104 N PD166104 PD166104 N MOS 100 V , S18753JJ1V0DS S18753JJ1V0DS tf 90% 10% 3 PD166104 PD166104 IN 3.0 V MOS IN 1.5 V MOS 5V VIN GND VOUT , ON L MOS OUT MOS - OUT VIN VOUT L 5V GND VOUT "H" "L" "L" OFF Vz OFF ON GND OUT OUT 18 V MOS MOS MOS "H" VIN "L" "L" 5V GND ... | Original |
14 pages, |
IR60-107-3 PD166104 D166104GS datasheet abstract |
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| Abstract: NS 2007 PD166104 PD166104 VCC1 IN1 OUT1 MOS N-ch GND1 Ch 1 , MOS MOS Integrated Circuit PD166104 PD166104 N PD166104 PD166104 N MOS , 3.0 V MOS IN 1.5 V MOS 5V VIN GND VOUT VOUT "H" "H" "H" "L" "L" "L" OFF OFF OFF ON GND ON "L" OFF ON L MOS OUT MOS - OUT VIN , MOS MOS MOS "H" VIN "L" "L" 5V GND VCC VOUT THI Tch 4 S18753JJ1V0DS S18753JJ1V0DS ... | Original |
12 pages, |
PD166104 D166104GS PD166104 abstract |
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| Abstract: 50V VJ0805Y102KXAC VJ0805Y102KXAC CERAMIC X7R 0603 RES 36.5K OHM 1/8W 1% 0603 SMD HEX/MOS N-CH 30V 10A 8-SOIC ... | Original |
7 pages, |
VJ0805Y332KXA 10UF 22UF 50V 10uF X7R 87227-3 C14A C15A C17A CCD SMD EP1551 T3B diode T494B226M016AS 10kOhm preset, SMD 1n5819 smd EP1551 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA N-Ch = 2.5 A N-Ch 0.044 0.048 -VGS = - 4.5 V, ID = - 1.9 A P-Ch 0.160 0.162 VGS = 2.5 V, ID = 1 A N-Ch 0 .5 A N-Ch 10 12 S VDS = - 10 V, ID = - 1.9 A P-Ch 4 5 Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V N-Ch 0.80 0.80 V IS = - 1.5 A, VGS = 0 V P-Ch - 0.85 - 0.80 Dynamicb Input Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz N-Ch 151 150 pF P www.datasheetarchive.com/download/6255556-949403ZC/si3585cdv_ps.zip (62502Si3585CDV_PS.pdf) |
Vishay | 04/08/2012 | 162.99 Kb | ZIP | si3585cdv_ps.zip |
| = 250 uA N-Ch 1.1 - V VDS = VGS, ID = - 250 uA P-Ch 1.6 - Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6.8 A N-Ch 0.020 0.020 -VGS = - 10 V, ID = - 8 A P-Ch 0.021 0.021 VGS = 4.5 V, ID = 6.6 A N-Ch 0.022 0.022 VGS = - 4.5 V, ID = - 5 A P-Ch 0.027 0.027 Forward Transconductancea gfs VDS = 15 V, ID = 6.8 A N-Ch 22 27 S VDS = - 15 V, ID = - 6.7 A P-Ch 22 25 Diode Forward Voltagea VSD IS = 5.4 A, VGS = 0 V N-Ch 0.80 0.81 V IS = - 2 A, VGS = 0 V P-Ch - 0.77 - 0.77 Dynamicb Input Capacitance www.datasheetarchive.com/download/99659478-949429ZC/si4554dy_ps.zip (63195Si4554DY_PS.pdf) |
Vishay | 18/07/2012 | 164.02 Kb | ZIP | si4554dy_ps.zip |
| CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA N-Ch = 0.6 A N-Ch 0.322 0.323 -VGS = - 10 V, ID = - 0.4 A P-Ch 0.740 0.740 VGS = 4.5V, ID = 0.1 A N-Ch 0 N-Ch 1.4 1.2 S VDS = - 15 V, ID = - 0.4 A P-Ch 0.71 0.60 Diode Forward Voltagea VSD IS = 0.5 A, VGS = 0 V N-Ch 0.86 0.80 V IS = - 0.4 A, VGS = 0 V P-Ch - 0.89 - 0.80 Dynamicb Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 28 28 www.datasheetarchive.com/download/53880465-949593ZC/si1539cdl_ps.zip (63680SI1539CDL.pdf) |
Vishay | 18/07/2012 | 160.57 Kb | ZIP | si1539cdl_ps.zip |
| .SUBCKT irhg6110-n-ch 1 2 3 * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY =infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS irhg6110-n-ch * * * Model generated on Nov 6, 02 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External www.datasheetarchive.com/files/international-rectifier/simulation-models/irhg6110n.spi |
International Rectifier | 06/11/2002 | 1.5 Kb | SPI | irhg6110n.spi |
| .SUBCKT irhg6110-n-ch 1 2 3 * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY =infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS irhg6110-n-ch * * * Model generated on Nov 6, 02 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External www.datasheetarchive.com/files/spicemodels/misc/spice/irhg6110n.spi |
Spice Models | 06/11/2002 | 1.5 Kb | SPI | irhg6110n.spi |
| .SUBCKT irhg6110-n-ch 1 2 3 * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY =infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS irhg6110-n-ch * * * Model generated on Nov 6, 02 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External www.datasheetarchive.com/files/spicemodels/misc/models/irhg6110n.spi |
Spice Models | 01/09/2003 | 1.5 Kb | SPI | irhg6110n.spi |
| .SUBCKT irhg6110-n-ch 1 2 3 * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY =infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS irhg6110-n-ch * * * Model generated on Nov 6, 02 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External www.datasheetarchive.com/files/spicemodels/misc/models/irf_spice/irhg6110n.spi |
Spice Models | 06/11/2002 | 1.5 Kb | SPI | irhg6110n.spi |
| -Channel Gate * Node 6 -> P-Channel Drain * Node 8 -> N-Channel Drain X1 8 2 1 irf7343-n-ch X2 6 4 3 irf7343-p-ch .ENDS irf7343 .SUBCKT irf7343-n-ch 1 2 3 .11 XTI=3.0 TT=0 CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.408289 .ENDS irf7343-n-ch * * * Model generated on Mar 22, 04 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 * * * Model generated on Mar 23, 04 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1 www.datasheetarchive.com/files/spicemodels/misc/spice/irf7343.spi |
Spice Models | 07/04/2004 | 3.47 Kb | SPI | irf7343.spi |
| Power-Mos Transistor, High current, High speed, Low gate charge. STS3DNE06L STS3DNE06L STS3DNE06L STS3DNE06L Double N-Ch www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/auto3-v1.htm |
STMicroelectronics | 20/10/2000 | 10.44 Kb | HTM | auto3-v1.htm |
| Power-Mos Transistor, High current, High speed, Low gate charge. STS3DNE06L STS3DNE06L STS3DNE06L STS3DNE06L Double N-Ch www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/auto3-v2.htm |
STMicroelectronics | 31/10/2000 | 10.44 Kb | HTM | auto3-v2.htm |