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mj4030 Datasheet

Part Manufacturer Description PDF Type
MJ4030 Central Semiconductor Leaded Power Transistor Darlington Original
MJ4030 Comset Semiconductors Darlington Medium Power Complementary Silicon Transistors Original
MJ4030 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan
MJ4030 Mospec Medium-Power Complementary Silicon Transistor Scan
MJ4030 Mospec POWER TRANSISTORS(16A,60-100V,150W) Scan
MJ4030 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ4030 Motorola The European Selection Data Book 1976 Scan
MJ4030 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ4030 Motorola European Master Selection Guide 1986 Scan
MJ4030 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ4030 Motorola Darlington PNP silicon power transistor. 60 V, 16 A, 150 W. Scan
MJ4030 N/A Basic Transistor and Cross Reference Specification Scan
MJ4030 N/A Shortform Transistor PDF Datasheet Scan
MJ4030 N/A Transistor Replacements Scan
MJ4030 N/A Cross Reference Datasheet Scan
MJ4030 N/A Semiconductor Master Cross Reference Guide Scan
MJ4030 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ4030 N/A Shortform Transistor Datasheet Guide Scan
MJ4030 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MJ4030 STMicroelectronics Shortform Data Book 1988 Scan

mj4030

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The , =0 IC=0 Page 1 of 4 Value MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Unit 60 80 V 100 60 , Dissipation TJ Ts Junction Storage Temperature @ TC < 25° MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 Comset Semiconductors
Original
MJ4030/31/32 MJ4033/34/35
Abstract: MJ4030 ­ MJ4031 ­ MJ4032 PNP MJ4033 ­ MJ4034 ­ MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY , Symbol Ratings Value MJ4030 MJ4033 VEBO Collector-EmitterVoltage Emitter-Base Voltage , MJ4034 MJ4030 MJ4033 Collector-Base Voltage 60 MJ4032 MJ4035 VCBO 100 MJ4030 , MJ4030 ­ MJ4031 ­ MJ4032 PNP MJ4033 ­ MJ4034 ­ MJ4035 NPN IC Collector Current IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature @ TC < 25° MJ4030 Comset Semiconductors
Original
MJ4032 equivalent MJ4032 TO3 COMSET SEMICONDUCTORS
Abstract: MJ4030 thru MJ4035 (continued) ELECTRICAL CHARACTERISTICS ITC - ;5°C uni«» oth«wi» noiMt L OFF CHARACTERISTICS Collector-Emitter Breakdown VoHageW (lC â  100 mAdc, - 0! MJ4030. MJ4033 , » MJ4030. MJ4033 - 5.0 (VC8 - 30 Vdc, R 86. -1.0 k ohm. Tc - 150°C) MJ4031, M J4034 - 5.0 (Vcb" 100 , .0 Vdc, lc - O) Col (actor-Emitter Leakage Current 'CEO mAdc (Vce - 30 lg â  0) MJ4030. MJ4033 , -1 .Ok ohm) MJ4030, MJ4033 â'¢CÃR - 10 mAdc (Vcb - 80 Vdc, RBE -1.0 K ohm) MJ4031, MJ4034 - 1.0 -
OCR Scan
AN-415 TIC COL 02 AN415 MJ403S
Abstract: MJ4030, MJ4031, MJ4032 PNP (SILICON) MJ4033, MJ4034, MJ4035 NPN MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS . for use as output devices in complementary general purpose amplifier applications. â'¢ High DC Current Gain - hpg = 3500 (Typ) @ lc - 10 Ade â'¢ Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS Rating Symbol MJ4030 MJ4033 MJ4031 M J 4034 MJ4032 MJ4035 Unit , Symbol Mfi't °c/w FIGURE 1 - DARLINGTON CIRCUIT SCHEMATIC PNP MJ4030 MJ4031 MJ4032 aw oâ -
OCR Scan
ITO-31 MJ4036 mj1034 mj103 MJ-103 225-j MJ1034 J4032
Abstract: 80900 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ4030 M J4031 MJ4032 NPN MJ4033 MJ4034 MJ4035 , SILICON 60-100 VOLTS 150 WATTS MAXIMUM RATINGS Rating Symbol MJ4030 MJ4033 MJ4031 MJ4034 , MJ4030 WJ4031 r MJ4032 FIGURE 1-DARLINGTON CIRCUIT SCHEMATIC Collector £ A - -B - lE , MJ4030, MJ4031, MJ4032 NPN MJ4033, MJ4034, MJ4035 ELECTRICAL CHARACTERISTICS ITC - 25"c unlea otherwise , Collector-Emitter Breakdown Voltegefll llc-100 mAdc. IB"0) MJ4030, MJ4033 MJ4031, MJ4034 MJ4032, MJ4035 V(BR)CEO 60 -
OCR Scan
MOTOROLA MJ4035 MJ4030 MOTOROLA MJ4032 MOTOROLA TRANSISTOR BC 187 nd 043 transistor C-10A IMITAT10
Abstract: ) Pulse Test: Pulse width = 300 us , Duty Cycle ^ 2.0% MJ4030.31,32 PNP / MJ4033,34,35 NPN DC CURRENT , (1) (I. = 100mA, lB = 0) MJ4030.MJ4033 MJ4031 ,MJ4034 MJ4032.MJ4035 VcEO(siis) 60 80 100 V Collector Cutoff Current (VCE = 30 V, I, = 0) MJ4030.MJ4033 (VCB = 40 V, I, = 0) MJ4031 ,MJ4034 (VCB = 50 V , ,0k ohm ) MJ4030.MJ4033 (VCB = 80 V, RBB = 1.0k ohm ) MJ4031 ,MJ4034 (VCB = 100 V, RBB = 1 .Ok ohm ) MJ4032.MJ4035 (VCB = 60 V, Rbb = 1 .Ok ohm , Tc = 150°C ) MJ4030.MJ4033 (VCB = 80 V, Rbb = 1 .Ok ohm , Tc = -
OCR Scan
mj4032.mj4035 TJ-25 IC/IB-250
Abstract: 7 ^ 5 3 7 QQgqob? a m 3 3 - 2P\ SCS-THOMSON H MJ4030/112 MJ4033/4/5 i S G S- TH O MS O N 3GE D GENERAL PURPOSE DESCRIPTION The MJ4030/31/32/33/34/35 are medium-power si­ licon NPN Darlington in Jedec TO-3 metal case, in­ tended for use in general purpose and amplifier ap­ plications. The complementary PNP types are the MJ4033/34/35 respectively. INTERNAL SCHEMATIC DIAGRAMS , . December 1988 1/2 821 MJ4030/31/32/33/34/35 ® S 6 7^2*^237 OOSTObö S -TH O M SO N -
OCR Scan
MJ4030/112 MJ4030/31/32/33/34/35 T-33-29
Abstract: MOTOROLA SC -CXSTRS/R F> I>F| b3L.725M OOfiGTDD 3 " 6367254 MOTOROLA SC CX S TR S /R F) 96D 8 09 00 T-J3~?3 TECHNICAL DATA SEMICONDUCTOR MOTOROLA PNP MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 16 A M P E R E M ED IUM -POW ER C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S D A R L IN G T O N POW ER T R A N S IS T O R S C O M P L E M E N T A R Y , - 3 3 PNP MJ4030, MJ4031, MJ4032 NPN MJ4033, MJ4034, MJ4035 E L E C T R IC A L CH A R A C TER -
OCR Scan
J4030 J4033 9BSC J4035 15BSC
Abstract: 2N6286 2N6287 MJ4030 MJ4031 PNP MJ4032 MJ11011 MJ11013 MJ11015 Complementary Darlington -
OCR Scan
2N6282 2N62B3 2N62B PL500 2C6284 2N6284 2C6287
Abstract: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4030/4031/4032 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL -
Original
4035 4034 MJ4030/4031/4032
Abstract: Inchange Semiconductor Product Specification MJ4033/4034/4035 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL -
Original
4034 datasheet
Abstract: 4.0 10 - MJ4033 MJ4030 16 150 60 60 1,000 - 10 4.0 16 - Central Semiconductor
Original
MJ802 MJ4502 MJ1000 MJ2500 MJ2501 MJ6503 PMD10K100 PMD17K100 PMD16K100 MJ4502 EQUIVALENT PMD1703K BUY69C MJ1001 MJ3000
Abstract: TO-3 Case (Continued) TYPE NO. ·e Power Transistors PD (W) bvc b o ® V cS O TYP (V) U H M m in hpE @ ic VCE(SAT) @ *c *TYP (V) MAX (A) NPN BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4Q34 MJ4035 MJ10012 MJ11012 MJ11014 MJ11011 MJ11013 MJ4502 M J 900 M J901 MJ2S00 MJ2501 MJ4030 NU4031 MJ4032 PN P MAX 10 30 8.0 8.0 to 10 16 16 16 10 30 30 30 12 12 12 12 8.0 8.0 8.0 8.0 20 20 20 20 20 20 30 30 30 10 10 10 (V) MIN 500 100 60 80 60 80 60 80 100 600 60 90 120 40 60 80 -
OCR Scan
PMD12K60 PMD1602K J901 MJ11016 PMD10K40 PMD10K60 PMD10K80 PMD12K40
Abstract: ,000 . 5.0 4.0 10 . mj4033 mj4030 16 150 60 60 1,000 . 10 4.0 16 â'" mj4034 mj4031 16 150 80 80 -
OCR Scan
pm010k60 PMD18K100
Abstract: - 5.0 4.0 10 - MJ4033 MJ4030 16 150 60 60 1,000 - 10 4.0 Central Semiconductor
Original
MJ10023 PMD12K100 PMD13K100 PMD19K100 MJ802 MJ4502 MJ802-MJ4502 pmd12k PMD11K60 PMD11K40 PMD12K80 PMD13K80
Abstract: min 15 3 .4 10 17 16 60 M J4033 MJ4030 1k/ 10 150 80 MJ4034 MJ4031 1 k/ 10 150 100 -
OCR Scan
2N3055H 2N3055 BD317 BD318 2N6030 MJ15022 MJ15024 MJ15025 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA 2N3055A MJ2955 MJ2955A MJ15015
Abstract: 10 . NM4033 MJ4030 16 150 60 60 1,000 . 10 4.0 16 . -
OCR Scan
PMD12K1 PMD1601K PMD1701K PMD1702K PMD1603K PMD16K60
Abstract: MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 MJ4502 MJ8500 MJ8501 MJ8502 MJ8503 MJ8504 MJ8505 -
OCR Scan
00D5M BUX17 BUX17A BUX17B BUX17C BUX18
Abstract: -1I1K-40 _ _ _ _ â'" â'" PMD-111K-60 2N6050 MJ2500 MJ4030 TIP645 - BDX88A PMD-111K-80 2N6051 MJ2501 MJ4031 -
OCR Scan
MC7805CK LM7808KC MC7808CK LM7812KC LM7815KC MC7815CK MC7812Ck MC7824CK LM340K-24 LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K
Abstract: - 5,000 10 2.8 10 â'" BU930 15 350 120 50- 8.0 1.5 8.0 â'" MJ4033 MJ4030 16 60 150 1,000- 10 -
OCR Scan
2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BUW67 2n6057 BDX87 bdx86c BDX86 BDX85C TEMPERATURE-55
Abstract: 2N6286 2N6287 MJ4030 MJ4031 PNP MJ4032 MJ11011 MJ11013 MJ11015 Complementary Darlington Micross Components
Original
MIMMG600WB060B6N
Abstract: - 5.0 4.0 10 - MJ4033 MJ4030 16 150 60 60 1,000 - 10 4.0 Eupec
Original
FS150R12KE3 499E-02 601E-02 364E-03 187E-05
Abstract: ,000 . 5.0 4.0 10 . mj4033 mj4030 16 150 60 60 1,000 . 10 4.0 16 â'" mj4034 mj4031 16 150 80 80 Eupec
Original
FS225R12KE3
Abstract: 4.0 10 - MJ4033 MJ4030 16 150 60 60 1,000 - 10 4.0 16 - Infineon Technologies
Original
FZ600R12KP4 E83335
Abstract: TO-3 Case (Continued) TYPE NO. ·e Power Transistors PD (W) bvc b o ® V cS O TYP (V) U H M m in hpE @ ic VCE(SAT) @ *c *TYP (V) MAX (A) NPN BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4Q34 MJ4035 MJ10012 MJ11012 MJ11014 MJ11011 MJ11013 MJ4502 M J 900 M J901 MJ2S00 MJ2501 MJ4030 NU4031 MJ4032 PN P MAX 10 30 8.0 8.0 to 10 16 16 16 10 30 30 30 12 12 12 12 8.0 8.0 8.0 8.0 20 20 20 20 20 20 30 30 30 10 10 10 (V) MIN 500 100 60 80 60 80 60 80 100 600 60 90 120 40 60 80 Infineon Technologies
Original
FZ600R12KE4
Abstract: Inchange Semiconductor Product Specification MJ4033/4034/4035 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL Infineon Technologies
Original
FZ800R12KL4C MJ15050 1200VIGBTM
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