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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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CUZ24V
|
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Toshiba Electronic Devices & Storage Corporation
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Zener Diode, 24 V, USC |
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XCUZ13V
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Toshiba Electronic Devices & Storage Corporation
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Zener Diode, 13.0 V, USC |
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XCUZ36V
|
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Toshiba Electronic Devices & Storage Corporation
|
Zener Diode, 36.0 V, USC |
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