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MJ 2955 - Power transistor Housing type: TO-3 Polarity: PNP Amplification: 20 ... Amplification min.: 20 Collector-emitter voltage: -60 V Power dissipation: 115 W 653 from €1.15 (Sep 2016) Distrelec Buy
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MJ 802G ON Semiconductor Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 Tray 200 from $1.8760 (Nov 2016) Arrow Electronics Buy
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MJ-064 Marushin Electric Mfg Extension jack Cable entry: 4.2 mm Colour: black Contacts: nickel-plated Gender of contacts: Female 1,194 from €0.73 (Oct 2016) Distrelec Buy
MJ-064 Pro-Signal CONNECTOR, RCA, JACK, 3.5MM, CABLE, 4WAY 1,525 from $0.74 (Dec 2016) element14 Asia-Pacific Buy
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MJ-064 Pro-Signal CONNECTOR, RCA/PHONO, RECEPTACLE, 4 POSITION; No. of Contacts:4Contacts; Gender:Jack; Pin Diameter:3.5mm; Connector Mounting:Cable Mount; Contact Plating:Gold Plated Contacts; Connector Body Material:Plastic Body; Product Range:- ;RoHS Compliant: Yes 656 from $1.04 (Dec 2016) Newark element14 Buy
MJ-064H - Jack panel socket Design: Panel-mount female receptacle Colour: grey Contacts: nickel-plated Gender: Female 2,174 from €0.71 (Aug 2016) Distrelec Buy
MJ-064H Marushin Electric Mfg Jack panel socket Design: Panel-mount female receptacle Colour: grey Contacts: nickel-plated Gender of contacts: Female 2,174 from €0.72 (Oct 2016) Distrelec Buy
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MJ-064H-R Marushin Electric Mfg Other wiring equipments 36 from $1.40 (Dec 2016) Chip1Stop Buy

mj 1504

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1.8® 4/.4 1.5'04/,4 1040 150 5® 20 3.0 1.5'04/.4 1®60 150 5® 24 3.0 2N5879 2N5879 , 1060 300 15® 20 MJ14003 MJ14003 MJ 14002 80 70 15-100® 50/3 2.5® 50/5 3»® 50/5 1®80 300 15®20 ... OCR Scan
datasheet

1 pages,
59.41 Kb

1307 TRANSISTOR 2N5067 2N5068 2N5069 2N5680 2N4902 2N5867 2N5869 mj 1504 2N4901 2N4903 transistor b 1560 MJ 5030 2N5862 transistor mj 1504 B48352 I515T0R mj 1504 transistor B48352 I515T0R B48352 B48352 I515T0R I515T0R TEXT
datasheet frame
Abstract: 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free ... IXYS
Original
datasheet

2 pages,
73.61 Kb

RBSOA E72873 mj 1504 TEXT
datasheet frame
Abstract: ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC , reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free ... IXYS
Original
datasheet

2 pages,
83.75 Kb

TEXT
datasheet frame
Abstract: 11W TC = 125°C 200 EAS Single Pulse Avalanche Energy 2 85 mJ PD Total Power , Ets Total Switching Losses td(on) tr td(off) tf Turn-on Delay Time Rise Time mJ , = +25°C 10.5 gfe Forward Transconductance VCE = 20V, I C = I C2 mJ 6 S , handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Emitter ... Advanced Power Technology
Original
datasheet

3 pages,
61.94 Kb

tl 72 oz mj 1504 ic lm 335 IGBT 100A APT100GF60JR TEXT
datasheet frame
Abstract: 100 A VGE = ±15 V; RG = 2.2 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon , RthJC (per diode) IGBT (typ.) T1-T6 Cth1 = 0.232 Cth2 = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 , 300 30 2.3 1.7 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE= 300 V; VGE = 15 ... IXYS
Original
datasheet

4 pages,
87.45 Kb

E72873 TEXT
datasheet frame
Abstract: f = 1MHz uC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 , (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 ... Microsemi
Original
datasheet

5 pages,
169.99 Kb

APT0502 APT40GL120JU3 TEXT
datasheet frame
Abstract: 5.5 2.5 4.5 mJ 200 A mJ Chopper diode ratings and characteristics IRM IF VF , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , °C TJ=25°C 16 60 12 E (mJ) 80 IC (A) 1 40 Eon 8 Eoff TJ=150°C 4 , 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V ... Microsemi
Original
datasheet

5 pages,
165.78 Kb

APT60GL120JU2 TEXT
datasheet frame
Abstract: 2.5 6.5 1.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td , = 1.504 T7 Cth1 = 0.123 Cth2 = 0.944 J/K; Rth1 = 0.223 K/W J/K; Rth2 = 0.077 K/W J/K; Rth1 = , 2.3 1.7 2.8 120 2.3 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.55 K/W VCE(sat) VGE(th) ICES ... IXYS
Original
datasheet

4 pages,
111.68 Kb

TEXT
datasheet frame
Abstract: 0V VCE = 25V f = 1MHz ns 150 35 ns 350 80 3.8 5.5 2.5 4.5 mJ 200 A mJ , Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and , 20 100 VCE = 600V VGE = 15V RG = 8.2 TJ = 150°C TJ=25°C 16 60 12 E (mJ) 80 , 80 IC (A) Eon E (mJ) 40 IC (A) VGE (V) Eoff 60 40 4 VGE=15V TJ ... Microsemi
Original
datasheet

5 pages,
165.44 Kb

APT60GL120JU3 TEXT
datasheet frame
Abstract: mJ mJ 140 A Chopper diode ratings and characteristics VRRM IRM Test Conditions Min , handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter , VCE (V) 3 4 0 VCE = 600V VGE = 15V RG =12 TJ = 150°C 10 50 E (mJ) 8 40 , TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) 12 TJ ... Microsemi
Original
datasheet

5 pages,
165.37 Kb

APT40GL120JU2 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/30507100-145322ZC/bf1012s.zip ()
Infineon 08/09/2000 7.65 Kb ZIP bf1012s.zip
m s square 10 A E as Non repetitive avalanche energy T j = 255C L = 30 mH I as = 8 A 90 mJ I ar 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5384-v2.htm
STMicroelectronics 14/06/1999 6.6 Kb HTM 5384-v2.htm
energy T j = 255C L = 30 mH I as = 4 A 45 mJ I ar Repetitive avalanche current Va = 1.5 x V R typ 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5385-v2.htm
STMicroelectronics 14/06/1999 6.5 Kb HTM 5385-v2.htm
energy T j = 255C L = 30 mH I as = 4 A 45 mJ I ar Repetitive avalanche current Va = 1.5 x V R typ 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5385-v1.htm
STMicroelectronics 02/04/1999 6.54 Kb HTM 5385-v1.htm
m s square 10 A E as Non repetitive avalanche energy T j = 255C L = 30 mH I as = 8 A 90 mJ I ar 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5384-v1.htm
STMicroelectronics 02/04/1999 6.63 Kb HTM 5384-v1.htm
No abstract text available
/download/43392718-960537ZC/ver_ex.uu
Xilinx 05/09/1996 4001.98 Kb UU ver_ex.uu
No abstract text available
/download/18416238-958267ZC/ver_ex.uu
Xilinx 08/07/1996 4001.98 Kb UU ver_ex.uu
No abstract text available
/download/63172489-869516ZC/u12src.zip ()
Texas Instruments 08/02/1999 847.53 Kb ZIP u12src.zip
No abstract text available
/download/6111223-996050ZC/xapp775.zip ()
Xilinx 26/08/2004 30899.35 Kb ZIP xapp775.zip
No abstract text available
/download/87140017-995962ZC/xapp290.zip ()
Xilinx 06/02/2004 2799 Kb ZIP xapp290.zip