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HI1-5049-5 Intersil Corporation DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, CDIP16, FRIT SEALED, CERAMIC, DIP-16 visit Intersil
HI1-5043/883 Intersil Corporation DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP16 visit Intersil
HI1-5043-5 Intersil Corporation DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP16 visit Intersil
HI1-5043-2 Intersil Corporation DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP16, FRIT SEALED, CERAMIC, DIP-16 visit Intersil
HI1-5042-2 Intersil Corporation 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP16, FRIT SEALED, CERAMIC, DIP-16 visit Intersil
HI1-5047-5 Intersil Corporation 4-CHANNEL, FOUR POLE SGL THROW SWITCH, CDIP16 visit Intersil

mj 1504 transistor equivalent

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mj 1504 transistor equivalent

Abstract: mj 1504 transistor combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ) 5500 EON2 , TURN-ON ENERGY LOSS (mJ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 2.2 , L = 200mH, VCE = 390V 1800 1600 1400 1200 1000 800 600 400 200 0 , ) 350 400 Figure 13. Transfer Characteristic 5 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL
Fairchild Semiconductor
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mj 1504 transistor equivalent

Abstract: transistor mj 1504 features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 50 60 70 E OFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 5500 RG = , 250 300 QG , GATE CHARGE (nC) Figure 14. Gate Charge ETOTAL , TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 100 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION
Fairchild Semiconductor
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mj 1504 transistor equivalent

Abstract: ARF450 transistor into a single device. A simplified equivalent circuit for an n-channel IGBT is shown in Figure 1 , , Power MOS 7TM employs new gate design layouts for extremely low internal chip equivalent gate , . REDUCED SHOOT THROUGH SUSCEPTIBILITY.increased gate threshold voltage -Vgs(th), ultralow equivalent , , nC typ, nC EAS mJ TO-247 Part Number 48 59 52 63 43 52 19 25 28 34 22 29 32 , 800 EAS mJ 0.200 1000 PD Qg Qgd Watts typ, nC typ, nC 100 690 174 96
Advanced Power Technology
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30n60a4d

Abstract: mj 1504 transistor equivalent features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 125 TC , CASE TEMPERATURE (o C) 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) E TOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 4 1 Figure 15. Total Switching Loss vs Case Temperature FREQUENCY = , insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed
Fairchild Semiconductor
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30N60A4D

Abstract: mj 1504 transistor equivalent combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 14. Gate Charge 5 RG = 3 , L = , material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers , 0.164 0.186 MAX 1.255 0.322 0.169 0.169 0.169 0.594 1.192 1.504 0.986 0.480 0.378 0.033 0.506 1.000
Fairchild Semiconductor
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mj 1504 transistor equivalent

Abstract: 40N60A4D of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop , , COLLECTOR TO EMITTER VOLTAGE (V) EOFF , TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ , 10 12 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ , "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being
Fairchild Semiconductor
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BF547B

Abstract: BFG65 equivalent transistors. COMPETITOR PACKAGE NAME EQUIVALENT CHART SOT143 SOT143/X SOT143/XR SOT223 SOT103
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UJT 2N2646

Abstract: 2N2646 pin diagram or one may think of this process in a slightly different but equivalent way, that is as the , 65 66 67 68 69 70 71 72 73 74 75 1 154 153 UCL = 152.8 152 151 X = 150.4
ON Semiconductor
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A5 GNE mosfet

Abstract: RF Data Manual. March, 1988, Motorola sixth edition Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 , Description Number RF Small-Signal Transistor. 2-14 High Frequency Transistor. 2-17 High Frequency Transistors
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UJT 2N2646 specification

Abstract: UJT 2N2646 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum , Uni­Directional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non­repetitive duty cycle. http , process in a slightly different but equivalent way, that is as the displacement of positive holes toward
ON Semiconductor
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UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 , process in a slightly different but equivalent way, that is as the displacement of positive holes toward
ON Semiconductor
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SEMICON INDEXES

Abstract: Ericsson SPO 1410 SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â , champ Transistors unijonction Transistors months en surface Guide de substitution [_JDis£Ositifs , .* CAR CARTER TRANSISTOR CORP. CRT CENTRAL SEMICONDUCTOR CORPORATION CEN CENTRONIC Ltd. CET CERLED ELS CHINA SEMICONDUCTOR CORP. CSC CLAI REX ELECTRONICS CLX CLEVITE TRANSISTOR PRODUCTS* ITT COLLMER SEMICONDUCTOR INC. COL COMMUNICATIONS TRANSISTOR CORP.* CTC COMPAGNIE DE LAMPS* CDL COMPAGNIE INDUSTRIELLE
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UJT 2N2646

Abstract: UJT-2N2646 PIN DIAGRAM DETAILS process in a slightly different but equivalent way, that is as the displacement of positive holes toward
ON Semiconductor
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7N60B equivalent

Abstract: 18N50 equivalent equivalent, an aid to locating re­ placem ent parts for old designs. C h a p ters 1 th ro u g h 5 , GUIDES AND CROSS REFERENCE POWER TRANSISTOR TECHNOLOGY SAFE OPERATING AREA POWER TRANSISTOR MANUFACTURING 3 POWER TRANSISTOR PACKAGING AND HEAT SINKING POWER TRANSISTOR RELIABILITY 5
IXYS
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2N4895

Abstract: transistor sec tip31A Reservedâ' Printed in U S A. in MOTOROLA POWER TRANSISTORS IN BRIEF W id e Range of Transistor S , BUX48 MJ 15020 MJD148 MJE16106 MJF122 MJF15031 BUV48A BUX48A MJ 15021 MJD243 MJF47 MJF125 , BD206 BD506 BD510 BD518 BD526 BD530 BUS47 BUS48 D44E2 MJ4030 MJ4034 MJ10044 MJ 13071 , MJ 10045 MJ13081 MJH6677 MJD29C 2N6835 BD208 BD508 BD516 BD520 BD528 BU205 BUS47P BUS48P D45E2 MJ4032 MJ 10041 MJ 10047 MJ13091 MJH6678 MJD30 Major Changes: All TO-204 (TO
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2N4895 transistor sec tip31A halbleiter index transistor Germanium drift transistor epitaxial mesa transistor BD222 S-10272 YU-41000 CH-8105

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the marketplace, and later w ith the invention of the integrated circuit, T , contains over 800 silicon transistor types (grown-junction, m ultijunction, unijunction, and field-effect
Motorola
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UJT-2N2646 PIN DIAGRAM DETAILS UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b
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