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mj 1504 transistor equivalent

Catalog Datasheet Type PDF Document Tags
Abstract: features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 50 60 70 E OFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 5500 RG = , 250 300 QG , GATE CHARGE (nC) Figure 14. Gate Charge ETOTAL , TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 100 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION ... Original
datasheet

9 pages,
136.8 Kb

of mj 1504 transistor LD26 transistors mj 1504 tsc 429 HGT1N40N60A4D 40N60A4 mj 1504 transistor transistor mj 1504 40N60A4D mj 1504 transistor equivalent HGT1N40N60A4D abstract
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Abstract: combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ) 5500 EON2 , TURN-ON ENERGY LOSS (mJ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 2.2 , L = 200mH, VCE = 390V 1800 1600 1400 1200 1000 800 600 400 200 0 , ) 350 400 Figure 13. Transfer Characteristic 5 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL ... Original
datasheet

9 pages,
159.21 Kb

40N60A4D transistor mj 1504 mj 1504 transistor mj 1504 transistor equivalent HGT1N40N60A4D HGT1N40N60A4D abstract
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Abstract: transistor into a single device. A simplified equivalent circuit for an n-channel IGBT is shown in Figure 1. , addition, Power MOS 7TM employs new gate design layouts for extremely low internal chip equivalent gate , REDUCED SHOOT THROUGH SUSCEPTIBILITY.increased gate threshold voltage -Vgs(th), ultralow equivalent , , nC typ, nC EAS mJ TO-247 Part Number 48 59 52 63 43 52 19 25 28 34 22 29 32 , 800 EAS mJ 0.200 1000 PD Qg Qgd Watts typ, nC typ, nC 100 690 174 96 ... Original
datasheet

24 pages,
2144.1 Kb

k1 4 3n mosfet catalog ARF443 APT8052BLL APT8043BLL APT8014JLL pnp mj 1504 APT8011JLL THOMSON IGBT transistor TO-264 Outline Dimensions APT6038BLL bonding TO-247 APT1201R2BLL transistors mj 1504 ISO9001 MIL-PRF-19500 ISO9001 abstract
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Abstract: combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 14. Gate Charge 5 RG = 3 , L = , material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers , 0.164 0.186 MAX 1.255 0.322 0.169 0.169 0.169 0.594 1.192 1.504 0.986 0.480 0.378 0.033 0.506 1.000 ... Original
datasheet

9 pages,
302.17 Kb

transistors mj 1504 transistor mj 1504 30n60* 227 HGT1N30N60A4D 30N60A4 mj 1504 transistor equivalent 30N60A4D HGT1N30N60A4D abstract
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Abstract: features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 125 TC , CASE TEMPERATURE (o C) 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) E TOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 4 1 Figure 15. Total Switching Loss vs Case Temperature FREQUENCY = , insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed ... Original
datasheet

9 pages,
272.91 Kb

LD26 30N60A4 TA49373 30n60* 227 hyperfast diode reference guide HGT1N30N60A4D TA49345 mj 1504 transistor equivalent 30n60a4d HGT1N30N60A4D abstract
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Abstract: of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop , , COLLECTOR TO EMITTER VOLTAGE (V) EOFF , TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ , 10 12 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ , "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being ... Original
datasheet

10 pages,
149.81 Kb

TRANSISTOR mosfet 40A transistor mj 1504 SOT227B package LD26 HGT1N40N60A4D 40N60A4 mj 1504 transistor mj 1504 transistor equivalent 40N60A4D TA49349 HGT1N40N60A4D abstract
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Abstract: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property 1 6 7 9 10 11 12 14 16 18 20 21 22 23 24 26 27 28 29 30 MICRONIX Analog Mixed Signal ASIC Capabilities 31 MwT MMIC Amplifiers Standard GaAs FETs & PHEMTs Wireless Amplifiers (MPS, ULA and WPS WiMax) Hybrid Microwave Modules Standard, Military & Hi-Rel Connectorized Amplifiers 61 62 64 66 67 ... Original
datasheet

288 pages,
9618.01 Kb

48N60 60n30 50E1200HB IXYS CS 20-22 MOF1 10N60C 10M45 IXTP 220N04T2 C 547 B W57 BJT transistor ixgh 1499 IXDD 614 MOSFET smd 4407 18N50 equivalent 7N60B equivalent datasheet abstract
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Abstract: UJT 2N2646 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. , Uni­Directional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non­repetitive duty cycle. http , equivalent way, that is as the displacement of positive holes toward the negative terminal. It is this drift ... Original
datasheet

148 pages,
1360.15 Kb

UJT pin diagram 2N2646 varistor pdz 320 dual sot363 marking code dp DIODE MARKING CODE SG 88A glass FUSE 1a mark qk sc70 Varistor pdz 32 o 2-GND MARKING QV sot23 press fit alternator diodes UJT-2N2646 PIN DIAGRAM DETAILS ge digital energy match ups Diode SOT-23 marking 15d datasheet abstract
datasheet frame
Abstract: UJT 2N2646 TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 , equivalent way, that is as the displacement of positive holes toward the negative terminal. It is this drift ... Original
datasheet

149 pages,
1366.81 Kb

GE Transient Voltage Suppression 2N2646 replaced by pin out of 2N2646 ujt DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram 5kv 5d 75 UJT pin identification UJT-2N2646 PIN DIAGRAM DETAILS TO-220 MOS marking dp U1 sot363 GE Transient Voltage Suppression Manual 1N6373 1N6381 1N6373 abstract
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Abstract: D6-16050 UJT 2N2646 checking UJT-2N2646 UJT 2n3904 UJT 2N2646 or one may think of this process in a slightly different but equivalent way, that is as the ... Original
datasheet

151 pages,
1367.74 Kb

GE Transient Voltage Suppression Manual smc 45100 Diode SOT-23 marking 15d 1N4746 18 Volt 1 watt zener diode DO41 PACKAGE diode marking S6 1N4742A 12 volt zener diode pin diagram of UJT-2N2646 BZX 460 zener diode varistor pdz 320 diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW BZX85C3V3RL DO-41 BZX85C3V3RL abstract
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