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PBLS1504V,115 NXP Semiconductors TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6, BIP General Purpose Small Signal ri Buy
PBLS1504Y,115 NXP Semiconductors TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal ri Buy
PUMF11 T/R NXP Semiconductors NPN resistor-equipped transistor; PNP general purpose transistor ri Buy

mj 1504 transistor equivalent

Catalog Datasheet Results Type PDF Document Tags
Abstract: features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 50 60 70 E OFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 5500 RG = , 250 300 QG , GATE CHARGE (nC) Figure 14. Gate Charge ETOTAL , TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 100 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION ... Original
datasheet

9 pages,
136.8 Kb

tsc 429 LD26 transistors mj 1504 HGT1N40N60A4D 40N60A4 mj 1504 transistor transistor mj 1504 40N60A4D mj 1504 transistor equivalent HGT1N40N60A4D abstract
datasheet frame
Abstract: combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ) 5500 EON2 , TURN-ON ENERGY LOSS (mJ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 2.2 , L = 200mH, VCE = 390V 1800 1600 1400 1200 1000 800 600 400 200 0 , ) 350 400 Figure 13. Transfer Characteristic 5 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL ... Original
datasheet

9 pages,
159.21 Kb

mj 1504 transistor equivalent HGT1N40N60A4D HGT1N40N60A4D abstract
datasheet frame
Abstract: transistor into a single device. A simplified equivalent circuit for an n-channel IGBT is shown in Figure 1. , addition, Power MOS 7TM employs new gate design layouts for extremely low internal chip equivalent gate , REDUCED SHOOT THROUGH SUSCEPTIBILITY.increased gate threshold voltage -Vgs(th), ultralow equivalent , , nC typ, nC EAS mJ TO-247 Part Number 48 59 52 63 43 52 19 25 28 34 22 29 32 , 800 EAS mJ 0.200 1000 PD Qg Qgd Watts typ, nC typ, nC 100 690 174 96 ... Original
datasheet

24 pages,
2144.1 Kb

APT10035JLL ae gp 735 APT6029BLL APT6038BLL APT8011JLL transistor TO-264 Outline Dimensions THOMSON IGBT pnp mj 1504 mosfet catalog mj 1504 transistor equivalent k1 4 3n bonding TO-247 ARF443 ISO9001 MIL-PRF-19500 ISO9001 abstract
datasheet frame
Abstract: combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate , ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 14. Gate Charge 5 RG = 3 , L = , material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers , 0.164 0.186 MAX 1.255 0.322 0.169 0.169 0.169 0.594 1.192 1.504 0.986 0.480 0.378 0.033 0.506 1.000 ... Original
datasheet

9 pages,
302.17 Kb

transistor mj 1504 HGT1N30N60A4D 30n60* 227 mj 1504 transistor equivalent 30N60A4 30N60A4D HGT1N30N60A4D abstract
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Abstract: features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop , 125 TC , CASE TEMPERATURE (o C) 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) E TOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 4 1 Figure 15. Total Switching Loss vs Case Temperature FREQUENCY = , insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed ... Original
datasheet

9 pages,
272.91 Kb

LD26 TA49373 HGT1N30N60A4D 30n60* 227 hyperfast diode reference guide TA49345 mj 1504 transistor equivalent 30n60a4d HGT1N30N60A4D abstract
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Abstract: of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop , , COLLECTOR TO EMITTER VOLTAGE (V) EOFF , TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ , 10 12 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ , "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being ... Original
datasheet

10 pages,
149.81 Kb

TRANSISTOR mosfet 40A transistor mj 1504 SOT227B package LD26 HGT1N40N60A4D 40N60A4 mj 1504 transistor equivalent 40N60A4D TA49349 HGT1N40N60A4D abstract
datasheet frame
Abstract: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property 1 6 7 9 10 11 12 14 16 18 20 21 22 23 24 26 27 28 29 30 MICRONIX Analog Mixed Signal ASIC Capabilities 31 MwT MMIC Amplifiers Standard GaAs FETs & PHEMTs Wireless Amplifiers (MPS, ULA and WPS WiMax) Hybrid Microwave Modules Standard, Military & Hi-Rel Connectorized Amplifiers 61 62 64 66 67 ... Original
datasheet

288 pages,
9618.01 Kb

vub 70-16 IXYS CS 20-22 MOF1 60n30 48N60 ixgh 1499 10M45 IXDD 614 10N60C C 547 B W57 BJT transistor MOSFET smd 4407 18N50 equivalent 7N60B equivalent datasheet abstract
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Abstract: UJT 2N2646 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. , Uni­Directional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non­repetitive duty cycle. http , equivalent way, that is as the displacement of positive holes toward the negative terminal. It is this drift ... Original
datasheet

148 pages,
1360.15 Kb

SCR SN 104 photo UJT 2N2646 specification tube RV 278 SOT223 marking SG thyristor s 236 glass FUSE 1a Varistor pdz 32 o UJT 2N2646 ratings mark qk sc70 UJT-2N2646 PIN DIAGRAM DETAILS 2-GND MARKING QV sot23 ge digital energy match ups datasheet abstract
datasheet frame
Abstract: 277 sidac schematic diagram UPS 10kw ujt transistor UJT 2N2646 TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 , equivalent way, that is as the displacement of positive holes toward the negative terminal. It is this drift ... Original
datasheet

149 pages,
1366.81 Kb

diac triac control circuit motor DO-41 U2 rectifier DO41 PACKAGE diode marking S6 marking codes Eb diode SMB pin diagram of UJT-2N2646 TO-220 MOS UJT-2N2646 PIN DIAGRAM DETAILS pin out of 2N2646 ujt GE Transient Voltage Suppression sine wave UPS inverter circuit diagram GE Transient Voltage Suppression Manual 1N6373 1N6381 1N6373 abstract
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Abstract: ujt transistor UJT 2n3904 UJT-2N2646 UJT 2N2646 or one may think of this process in a slightly different but equivalent way, that is as the ... Original
datasheet

151 pages,
1367.74 Kb

sine wave UPS inverter circuit diagram rectifier s4 case R-1 bilateral zener diode marking 1N4746 18 Volt 1 watt zener diode pin diagram of UJT-2N2646 diode zener BZX 61 C 10 pin out of 2N2646 ujt smc 0-160 psig varistor pdz 320 UJT pin diagram 2N2646 UJT 2N2646 specification BZX85C3V3RL DO-41 BZX85C3V3RL abstract
datasheet frame

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