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mj 13003

Catalog Datasheet MFG & Type PDF Document Tags

mj 13003

Abstract: transistor MJ 13009  lajor Source for G\9Piy High Voltage Power Transistors in TO-3 and T0-220 Case Outline Semiconductor Technology, Inc., in an effort to enhance the most complete High Voltage Transistor product line in the industry, is complimenting the High Voltage Transistor product line with High Voltage Power Transistors in the TO-3 & T0-220 case outline, that are direct replacements for the MJ and MJE13000 series , -423 400* 10 2.5 TO-3 MJ431 STI-431 400* 10 3.5 TO-3 MJE13002 STI-13002 600* 5 to TO-220 MJE13003 STI-13003
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mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 mj 13007 MJ410 STI-410 MJ411 STI-411 MJ413 STI-413

mj 13003

Abstract: transistor MJ 13003 B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13003 C D Date
Hi-Sincerity Microelectronics
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HE200502 HMJE13003E 13003CD E13003 13003c E 13003 TRANSISTOR E13003C 13003 transistor

mj 13003

Abstract: transistor MJ 13003 Pb Free Mark D H MJ E 13003 E I Date Code Pb-Free: " . " (Note) Normal: None
Hi-Sincerity Microelectronics
Original
HD200207 HMJE13003D E13003E Transistor C G 774 6-1 E 13003 13003e

igbt 1500A

Abstract: igbt module 1500A Dimensions Inches Millimeters A 7.48±0.02 190.0±0.5 M 0.51±0.012 13.0±0.3 , COLLECTOR CURRENT, IC, (AMPERES) SWITCHING ENERGIES, Eon, Erec, (mJ/PULSE) VCC = 1800V VGE = ±15V RG , , Erec, (mJ/PULSE) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE) EMITTER-COLLECTOR VOLTAGE, VEC , °C Inductive Load SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING ENERGY, Eoff, (mJ/PULSE) 8
Powerex
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CM1500HC-66R igbt 1500A igbt module 1500A CM1500HC 1500Amperes Powerex 1800V

transistor MJ 13003

Abstract: mj 13003 Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 13003 TS , ) Fall Time 180 mJ 1.0 1.5 V 2.0 V 55 65 75 V 55 65 75 V
SANYO Electric
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2SC5832 2044B PC 13003 TRANSISTOR circuit transistor sw 13003 HE 13003 sw 13003 PC 13003 TRANSISTOR transistor 13003 C ENN7287 2045B

ksd 302 250v, 10a

Abstract: irf 5630 900 260007 otl " " 1-S0I-ÌM-M41 IJItfJ Fax * 44-906-260006 » Mj raxsM-m-M«i â"¢ ILiCTaoWlCt , Footprint 15010 "irtifuiitiiut 1.500 223 PINS Footprint 13003 Piti 100 PINS footprint 15007 Footprint
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ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

13003 HJ

Abstract: HJ 13003 -8357F33MC-MGS-T2 S - 8 3 5 7 B 5 0 M C - N J J - T 2 S- 8 3 57 F 5 0MC - MH J - T2 S - 8 3 5 7 G 5 0 MC - MJ J - T2
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CON-290 QQN-290 MIL-T-10727 13003 HJ HJ 13003 MJ 15030 Irf 1540 N aries 14004 MIL-7-10727 QQW-290 OON-290

transistor MJ 13003

Abstract: transistor bd 711 S- 8 3 57 F 5 0MC - MH J - T2 S - 8 3 5 7 G 5 0 MC - MJ J - T2 Output voltage (V) 3.3 5.0 S
Seiko Instruments
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transistor bd 711 pin diagram of 8355 DIL M50 coil step-down sot-23-5 input shindengen MC S-8355/56/57/58 S-8355/57 S-8356/58

transistor MJ 13003

Abstract: mj 13003 champ Transistors unijonction Transistors months en surface Guide de substitution [_JDis£Ositifs
Seiko Instruments
Original
MP005-A-C-SD-2 MP005-A-R-SD-1 UP003-A UP003-A-P-SD-1 UP003-A-C-SD-1 UP003-A-R-SD-1

transistor 8BB smd

Abstract: ASEA HAFO AB BUX48 MJ 15020 MJD148 MJE16106 MJF122 MJF15031 BUV48A BUX48A MJ 15021 MJD243 MJF47 MJF125 , BD206 BD506 BD510 BD518 BD526 BD530 BUS47 BUS48 D44E2 MJ4030 MJ4034 MJ10044 MJ 13071 , MJ 10045 MJ13081 MJH6677 MJD29C 2N6835 BD208 BD508 BD516 BD520 BD528 BU205 BUS47P BUS48P D45E2 MJ4032 MJ 10041 MJ 10047 MJ13091 MJH6678 MJD30 Major Changes: All TO-204 (TO
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transistor 8BB smd ASEA HAFO AB SEMICON INDEXES IGBT M16 100-44 GM378 Ericsson SPO 1410 VV276
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