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TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments

mitsubishi gaAs

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gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package
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MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

MGFS45H2201G

Abstract: MGFS40H2201G GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the , MITSUBISHI GaAs devices: The best solution for realizing the information era. Communication networks, such , Multimedia Network WiMAX Features We provide a variety of solutions to e provide variety variety GaAs , providing a variety of GaAs products designed for satellite communication systems to base stations and cellular handset applications. Noise Figure NF (dB) at 12GHz MAP For SELECTION GaAs FET SERIES
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MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF4953A MGF4934AM MGF4931AM GD-16 MGF1908A GD-27

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary , ELECTRIC (2/16) Aug. '97 MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER
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MGF 1200 mitsubishi mgf 715GH

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER , mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER , ) MITSUBISHI ELECTRIC (6/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information , evaluation Pin (dBm) MITSUBISHI ELECTRIC (7/20) Aug. '97 MITSUBISHI SEMICONDUCTOR
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RF MMIC MARK CODE AS 2SP53 mitsubishi microwave HPA 1200 RF MMIC MARK CODE -03 7169C
Abstract: MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , ) 12 16 Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR , Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR -
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F7170A
Abstract: =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , (4/12) M ar/97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER , .'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout, Idt, r|t for , UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad Unit:mm MITSUBISHI ELECTRIC M ar.'97 (11/12) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7168C UHF BAND GaAs -
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1785MH 1910MH DCS1800 PCN/DCS1800 1750MH
Abstract: MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Input , ELECTRIC (4/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs -
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Abstract: MITSUBISHI SEM ICO ND UC TO R MGF7169C Technical Note UHF BAND GaAs POW ER AM , malfunction or mishap. M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R , IS H I E L E C T R IC Aug '97 MITSUBISHI SEM ICO NDUCTO R Preliminary , Harmonics M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R , B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R Preliminary -
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GF7169C

1715G

Abstract: 17-15G MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change , ) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND G aAs POWER AMPLIFIER , . '97 M ITS U B ISH I ELECTRIC (2/16) MITSUBISHI SEMICONDUCTOR Preliminary , ELECTRIC (3/16) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND , =2.6V CDMA evaluation Aug '97 M ITS U B ISH I E LEC TR IC (4/16) MITSUBISHI SEMICONDUCTOR
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1715G 17-15G MGF7170A

mitsubishi mgf

Abstract: 33dBm MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , MITSUBISHI ELECTRIC (2/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , /12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER
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33dBm DCS1900 PCS1900

MGF2430A

Abstract: MGF4714AP MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR LOW NOISE DEVICES , '" 1.2dB MGF4918E â'¢ NF MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR , MGFC36V4450A MGFC42V4450 MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER , MGF2407A MGF2430A MGFC36V5964A MGFC42V5964 L>.->->-[> >- - 42dBm MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER DEVICES) 7.7 ~ 8.5GHz
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MGF4714AP MGF4914D MGF1923 MGF1402B MGF4919 7.1 power amplifier circuit diagram MGF4919E MGF4914E MGF49T4D

MGF0805A

Abstract: s band < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , notice. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage , 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A
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s band MITSUBISHI example
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , :Channel-case Specifications are subject to change without notice. 1 Typ. mA mS < High-power GaAs , DRAWING < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A S-parameters( Ta=25deg.C , VDS=10(V),IDS=400(mA) ) < High-power GaAs FET (small Mitsubishi
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mitsubishi 4a fet

Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 ­ , ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 , =25deg.C Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2
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mitsubishi 4a fet

MGFC47B3436B

Abstract: CR10 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification , : Channel-case MITSUBISHI ELECTRIC (1/4) Spe. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR , )EVM(%) 13 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final , ELECTRIC (3/4) Sep. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not , BAND 50W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric
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MGFC47B3436B CR10 GaAs FET 15A GF-60

bt 1696

Abstract: transistor z14 smd MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , change without notice. 1 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR , PATTERN 2 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & , . / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , . / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched
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bt 1696 transistor z14 smd transistor z15 smd z14 smd Z25 SMD BT 1610 circuit GF-50
Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 â , breakdown voltage VGSO Mitsubishi Electric Corporation puts the maximum effort into making , :Channel-case 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND , band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W Pout , Id Mitsubishi
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smd z13

Abstract: of bt 1696 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] S-parameters , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET
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smd z13 of bt 1696 Z12 SMD
Abstract: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â'" 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use , +175 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products , :Channel-case 1 < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â'" 3.6 GHz BAND / 30W MGFC45B3436B TYPICAL CHARACTERISTICS < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â Mitsubishi
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EVM12

Abstract: MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs , ) Mar. 2006 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY , (2/6) Mar. 2006 ID(A) ID(A) MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - , 0.907 60 MITSUBISHI ELECTRIC (3/6) Mar. 2006 MITSUBISHI SEMICONDUCTOR , ELECTRIC ( 4 / 6) Mar. 2006 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND
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EVM12

FA12201

Abstract: J3125 MITSUBISHI {DISCRETE SC> TÏ »E jbEMTfiBT DOlOltB 4 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR FA 1 2 2 0 1 6249829 MITSUBISHI ( D I S C R E T E SC) 91D 10164 D , MITSUBISHI SEMICONDUCTOR FA 1 2 2 0 1 6249829 MITSUBISHI ( D I S C R E T E SC) 91 D 10165 , OIL L MITSUBISHI SEMICONDUCTOR FA12201 6249829 MITSUBISHI ( D I S C R E T E SC) 9 1
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J3125 mitsubishi Lot No J-31-25
Abstract: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 ­ 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in , 175 -65 to +175 *1 : Tc=25C Mitsubishi Electric Corporation puts the maximum effort into making , < C band internally matched power GaAs FET > MGFC45B3436B 3.4 ­ 3.6 GHz BAND / 30W MGFC45B3436B TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < C band internally matched power GaAs FET Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - Mitsubishi
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s band

Abstract: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 , -20 -10 10 175 -65 to +175 Unit V V W C C *1 : Tc=25C Mitsubishi Electric Corporation puts , GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W MGFL45V1920 TYPICAL CHARACTERISTICS Pout , PAE , =25deg.C 2-tone test , f=5MHz Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs
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s band

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for , . Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND , ., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD , < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non -
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S 1149 212

Abstract: mgf0911A MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band , :Pin=25dBm Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S , VDS(V) Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S , 10.1 9.8 9.4 June/2004 MITSUBISHI SEMICONDUCTOR MGF0911A L, S BAND POWER GaAs
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S 1149 212 41dBm GF-21
Abstract: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 â'" 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 , circuit designs! Absolute maximum ratings Symbol Mitsubishi Electric Corporation puts the maximum , ï'°C/W delta Vf method *2 :Channel-case 1 < L/S band internally matched power GaAs FET , =5MHz < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 â'" 2.0 GHz BAND / 60W Mitsubishi
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12W SMD

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for , , limits are subject to change. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal , CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage , Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND
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12W SMD
Abstract: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL , =25.2GHz Gs = 10.0dB (Typ.) APPLICATION K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS , noise figure Note: Gs and NFmin. are tested with sampling inspection. 1 V , Unit : mm 2.2â'¢0.1 1.35â'¢0.2 Side 0.15â'¢0.05 1.7â'¢0.1 (GD-32) Mitsubishi
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AEC-Q101

ku Band Power GaAs FET

Abstract: Dec./2006 MITSUBISHI SEMICONDUTOR MGF1451A Microwave Power GaAs FET , dBm /W MITSUBISHI (1/3) Decl/2006 Dec./2006 MITSUBISHI SEMICONDUTOR , MITSUBISHI (2/3) Glp(dB) 15 20 Decl/2006 Dec./2006 MITSUBISHI SEMICONDUTOR MGF1451A Microwave Power GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly , -55 to +175 (Ta=25°C ) Unit V V mA mW °C °C Mitsubishi Electric Corporation puts the maximum
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ku Band Power GaAs FET
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed , Unit Max. -5 6.5 V dBm % dB dBc ï'°C/W < High-power GaAs FET (small signal gain stage , < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage Mitsubishi
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GP144

Abstract: CR10 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification , PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification. Some , /4) Sep. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a , 30W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly , MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFS45B2527B is an internally impedance-matched
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GP144

ka-band amplifier

Abstract: MITSUBISHI CAPACITOR MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5108 Notice : This is not a final , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5108 Notice : This is not a final specification , Frequency (GHz) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5108 Notice : This is not a final specification , DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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ka-band amplifier MITSUBISHI CAPACITOR cb amplifier vD1A LNA ka-band

AS4321

Abstract: MGFC45B3436B MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially , *3 : Channel-case MITSUBISHI ELECTRIC (1/6) Apr. 2007 MITSUBISHI SEMICONDUCTOR , ELECTRIC (2/6) Apr. 2007 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W , Apr. 2007 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY
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AS4321

Ka-band

Abstract: ka band lna MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5107 Notice : This is not a final , July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5107 Notice : This is not a , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5107 Notice : This is not a final specification , ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5107 Notice , DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band
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Ka-band ka band lna

C42V5964

Abstract: MGF1302 TRANSISTOR © MITSUBISHI ELECTRIC CORPORATION GaAs Discrete Devices Low Noise GaAs FETs/HEMTs GaAs HEMTs/FET CHIPs , GaAs FETs X/Ku Band Internally Matched Power GaAs FETs Preceding Page © MITSUBISHI ELECTRIC , © MITSUBISHI ELECTRIC CORPORATION 1 Power GaAs FETs, Unmatched Type No. MGF0904A MGF0905A MGF0906B , for mm-wave Communication GaAs Modules for Handy Phone Preceding Page © MITSUBISHI ELECTRIC , Please Read "Notes" First! Contents Notes Contact Addresses © MITSUBISHI ELECTRIC
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C42V5964 MGF1302 TRANSISTOR MGF1601 H2 MARKING SOT-89 mmIC M67760LC MGFC1402 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B

Band Power GaAs FET

Abstract: 16621 MITSUBISHI SEMICONDUCTOR MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially , -'04 MITSUBISHI SEMICONDUCTOR MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET , )( &4#+0 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the , ,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,delta f=5MHz *3 : Channel-case MITSUBISHI
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Band Power GaAs FET 16621 high power FET transistor s-parameters

16621

Abstract: 351 fet MITSUBISHI SEMICONDUCTOR MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially , =5MHz MITSUBISHI ELECTRIC June-'04 (1/6) S-band 30W Power GaAs FET OUTLINE DRAWING Unit : millimeters , MITSUBISHI ELECTRIC CORPORATION (2/6) June-'04 Sband 30W Power GaAs FET MGFS45A2527B OUTPUT POWER & , -'04 MITSUBISHI SEMICONDUCTOR MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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351 fet 079MIN

MGFC2430A

Abstract: L to Ku band amplifiers MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The M G FC2400 series GaAs FETs were designed fo r high frequency, m edium and high power GaAs , ELECTRIC (1/4) MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET , ELECTRIC (2 /4 ) MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs , 18. 1 -23.5 -28,0 MITSUBISHI ELECTRIC (3 / 4 ) MITSUBISHI SEMICONDUCTOR
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L to Ku band amplifiers
Abstract: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , Noise GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Side Top  ïƒ' ï , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless Mitsubishi
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MGF0905A

Abstract: IDS800 < High-power GaAs FET (small signal gain stage)> MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , 1.9±0.4 9.0±0.2 2MIN APPLICATION 4.4+0/-0.3 < High-power GaAs FET (small signal , < High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched MGF0905A , 12.2 10.4 8.1 Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage
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IDS800

RG1000

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for , dBm % dB C/W *3:Channel to case Publication Date : Apr., 2011 1 < High-power GaAs FET (small , CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage , =0.15A, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain
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RG1000
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , ï'°C/W Vf method *2 :Channel-case 1 Typ. A S < High-power GaAs FET (small signal , =2.3GHz) < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched MGF0910A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.3(A) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET Mitsubishi
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Abstract: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM , MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , . 1 V < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package 2.10 ±0.1 1.30  , Noise GaAs HEMT > MGF4934CM 4pin flat lead package TYPICAL CHARACTERISTICS (Ta=25°C) ID vs , =2V) < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package S PARAMETERS (VDS=2V,ID=10mA,Ta=room Mitsubishi
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MGF4934CM-75

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , 300 175 -55 to +125 (Ta=25°C) Unit V V mA mW °C °C MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta
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gaas fet micro-X Package gaas fet micro-X 133 marking Micro-X micro-X ceramic Package gaas fet marking marking 133 micro-x

MGFC36V5867

Abstract: MITSUBISHI SEMICONDUCTOR MGFC36V5867 5.86.75GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5867 device is an internally impedance-matched GaAs power FET , Max. 3.75 -4.5 1.8 6 A S V dBm dB A % deg.C/W MITSUBISHI SEMICONDUCTOR , ELECTRIC MITSUBISHI SEMICONDUCTOR MGFC36V5867 5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi
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capasitor

Abstract: 2.4 GHz driver amplifier MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5216 Notice : This is not a final , '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5216 Notice : This is not a , (dBm) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY , BLOCK DIAGRAM The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle , ( ):Design Target (Now Evaluating) MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR
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capasitor 2.4 GHz driver amplifier

Z158

Abstract: V i Curve Tracer MITSUBISHI {DISCRETE SC> - TI D E | b 5 M ci ñ S c l GOlGlbO CT T T 9 1D 1 0 1 6 0 N o v e « - t h l* « to c W » « * 8 MITSUBISHI SEMICONDUCTOR , MITSUBISHI {DISCRETE S O ~ TL DE|b54c iñaT D D l D l b l 0 MITSUBISHI SEMICONDUCTOR , DEr |t,S4c löST GDlOlba MITSUBISHI SEMICONDUCTOR
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Z158 V i Curve Tracer curve tracer TRACER SC 6249 DT-31-25 MGF7004 GF7004 Z--158

MGF0904

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , 1.9±0.4 9.0±0.2 2MIN APPLICATION 4.4+0/-0.3 < High-power GaAs FET (small signal , < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched MGF0904A , 16.5 15.1 14.1 11.9 Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain
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MGF0904
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , *2 :Channel-case Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain , =2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND , S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , ., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A S , < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched Keep safety Mitsubishi
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mgfc42v5964

Abstract: MGFC42V5964A MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs , MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4 GHz BAND , 0.079 146 0.43 48 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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GF-38

capasitor

Abstract: datasheet capasitor MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5214 Notice : This is not a final , MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5214 , (Vg1) Vd1 Vg2 MITSUBISHI ELECTRIC Vd2 as of July '98 MITSUBISHI SEMICONDUCTOR , ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5214 Notice , BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High
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datasheet capasitor X199 40GHz power amplifier mitsubishi y-160
Abstract: MITSUBISHI SEMICONDUCTOR MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET , ) MITSUBISHI SEMICONDUCTOR MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET T Y P IC A L , ) MITSUBISHI SEMICONDUCTOR MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET S i [ , S 22 VS* f , -10.3 MITSUBISHI ELECTRIC ( 3 /4 ) MITSUBISHI SEMICONDUCTOR MGFC2407A C - Ku -
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Abstract: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL Mitsubishi
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mitsubishi *4a fet

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , efficiency Thermal resistance *2 :Channel-case Publication Date : Apr., 2011 1 < High-power GaAs , (f=2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET (small
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mitsubishi *4a fet

P1dB50

Abstract: < C band internally matched power GaAs FET > MGFC47A4450 4.4 ­ 5.0 GHz BAND / 50W DESCRIPTION The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in , -130 168 166 175 -65 to +175 *1 : Tc=25C Mitsubishi Electric Corporation puts the maximum effort , Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC47A4450 4.4 ­ 5.0 GHz , GaAs FET > MGFC47A4450 4.4 ­ 5.0 GHz BAND / 50W MGFC47A4450 S-parameters( Ta=25deg.C , VDS=10(V
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P1dB50 GF-53
Abstract: < C band internally matched power GaAs FET > MGFC47B3436 3.4 â'" 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use , Storage temperature -55 to +150 Mitsubishi Electric Corporation puts the maximum effort into making , Bandwidth:6MHz *3 :Channel-case 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 â , =12V,Idq=1.5A,Pout=37dBm,Ta=25deg.C WiMAX:64QAM-3/4,Bw=7MHz < C band internally matched power GaAs FET Mitsubishi
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MGF1601B

Abstract: MGF1601 < High-power GaAs FET (small signal gain stage) > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to , Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , =100mA,f=8GHz Vf method *1:Channel to ambient Publication Date : Apr., 2011 1 < High-power GaAs , CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage
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InGaAs HEMT mitsubishi

Abstract: transistor P7d June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless , MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW , /5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless
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InGaAs HEMT mitsubishi transistor P7d Fet P7d

MGF0906B

Abstract: < High-power GaAs FET (small signal gain stage)> MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , < High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched MGF0906B , , ID, PAE vs. VDS (f=2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal , < High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched Keep safety
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mitsubishi microwave

Abstract: fet 4468 MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , ) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER , ) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER
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fet 4468 4468 fet

M 1661 S

Abstract: MITSUBISHI SEMICONDUCTOR MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET , -4.0 - 7 7 add - MITSUBISHI ELECTRIC (1/4) MITSUBISHI SEMICONDUCTOR , ) MITSUBISHI SEMICONDUCTOR MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET Sj i , S 22 , =150mA Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort
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M 1661 S

5964 fet

Abstract: MGFC36V5964A MITSUBISHI SEMICONDUCTOR MGFC36V5964A 5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V5964A is an internally impedance-matched GaAs power FET especially , Storage temperature -65-+175 deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric , Level, f=6.4GHz, Delta f=10MHz *2: Channel to case A MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR
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5964 fet
Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T h is is not a final specification , . Max. Unit A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , MITSUBISHI ELECTRIC as of July *98 MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T h , MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice , bonding wire > 3 A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR -
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5107 N o tice : T h is is not a final , 775 1430 2300 A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY M r p r * m , bonding wire > 3 A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 -
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MITSUBISHI CAPACITOR

Abstract: MGFC5110 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5110 Notice : This is not a final , MITSUBISHI ELECTRIC dBm dBm V mA V as of July '98 MITSUBISHI SEMICONDUCTOR , 110 2300 MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5110 Notice : This , DESCRIPTION BLOCK DIAGRAM The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGF0953P

Abstract: MITSUBISHI SEMICONDUCTOR MGF0953P L & S BAND GaAs FET [Plastic Mold Lead-less PKG] DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers , 14 20 deg.C/W MITSUBISHI ELECTRIC (1/4) Ver. 1-2 May.2005 MGF0953P L & S BAND GaAs FET [Plastic , (dBm) MITSUBISHI ELECTRIC (2/4) Ver. 1-2 May.2005 MGF0953P L & S BAND GaAs FET [Plastic Mold , .2005 MGF0953P L & S BAND GaAs FET [Plastic Mold Lead-less PKG] Requests Regarding Safety Designs Mitsubishi
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MGFC41V7177

Abstract: MITSUBISHI SEMICONDUCTOR MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs , 20.000 -13.000 Oct-01 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC Mitsubishi , 2 MIN The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for , -51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz MITSUBISHI ELECTRIC MITSUBISHI
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GF-18

MGF1951A

Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF1951A Microwave Power MES FET (Leadless , =12GHz,Pin=-5dBm MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR , § À Å w »Ä MITSUBISHI (3/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR , Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum effort , 1. Gate 2. Source 3. Drain MITSUBISHI (2/5) June /2004 June/2004 MITSUBISHI
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF09121A TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain , =500mA, Reference Plane see Fig.1) Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched MGF0919A TYPICAL CHARACTERISTICS VDS=6V ID=0.1A f=1.9GHz < High-power GaAs FET (small signal gain stage , =300mA, Reference Plane see Fig.1) < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W Mitsubishi
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MGF4937

Abstract: MGFG5H1503 information era by providing a variety of GaAs/GaN products designed for satellite communication systems to base stations and cellular handset applications. LINE UP I LI N E U P MAP For SELECTION GaAs , 5,6 Page Page 2 6 Internally Matched GaAs FET Series for Microwave-band High Power Amplifiers Page Page 3 6,7 GaAs Power Amplifiers for Mobile Phone and Data Communication , Communications Page GaAs FET/InGaP HBT Series for Microwave-band High Power Amplifiers (Discrete Devices
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MGF4937AM MGF4937 MGFG5H1503 MGFG5H1502 mgfc39v5964 mgf*S45V2527A MGF4935AM H-CX587-R KI-1311

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION , amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION , . Publication Date : Apr., 2011 1 MGF4941CL Micro-X type plastic package , Gate Source Drain (GD-32) Publication Date : Apr., 2011 2 (2.3) E
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Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v transistor "micro-x" "marking" 3
Abstract: < C band internally matched power GaAs FET > MGFC47A4450 4.4 â'" 5.0 GHz BAND / 50W , internally impedance-matched GaAs power FET especially designed for use in 4.4 â'" 5.0 GHz band amplifiers , -10 V IGR Reverse gate current -130 Mitsubishi Electric Corporation puts the maximum , : Channel-case 1 < C band internally matched power GaAs FET > MGFC47A4450 4.4 â'" 5.0 GHz BAND / 50W , f = 5.0GHz < C band internally matched power GaAs FET > MGFC47A4450 4.4 â'" 5.0 GHz BAND Mitsubishi
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MGF4921AM

Abstract: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM , .1 APPLICATION L to C band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS , - dB 11.5 13 - dB - 0.35 0.55 dB < Low Noise GaAs HEMT , .â'¢5) Side Unit: mm 会 Gate 解 Source 回 Drain (GD-30) < Low Noise GaAs HEMT > MGF4921AM
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LNA ka-band

Abstract: MGFC5109 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5109 Notice : This is not a final , MITSUBISHI ELECTRIC dBm dBm V mA V as of July '98 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5109 Notice : This is not a final specification , Frequency [GHz] MITSUBISHI ELECTRIC 31 32 as of July '98 MITSUBISHI SEMICONDUCTOR , DESCRIPTION BLOCK DIAGRAM The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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mitsubishi microwave

Abstract: MGF1952A June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless , June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic , §À Å w »Ä MITSUBISHI (3/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR , Point Drain Source MITSUBISHI (4/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR , °C Tstg Storage temperature -65 to +125 Mitsubishi Electric Corporation puts the maximum
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fet 30 f 124

Abstract: TIP 41 fet MITSUBISHI SEMICONDUCTOR MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs , 81 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC41V5964 5.9 ~ 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi , 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use , =30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz MITSUBISHI ELECTRIC June/2004 MITSUBISHI
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fet 30 f 124 TIP 41 fet

po34d

Abstract: MGFS45B < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 ­ 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in , dissipation Cannel temperature Storage temperature Ratings 175 -55 to +150 *1 : Tc=25C Mitsubishi , *3 :Channel-case Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET , < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 ­ 2.7 GHz BAND / 30W
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po34d MGFS45B mgfs45b2527

MGF0909A

Abstract: MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND GaAs FET [ non ­ matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is , 40 Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR MGF0909A L & S BAND GaAs FET [ non ­ matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives , :Pi=22dBm Vf Method Above parameters, ratings, limits are subject to change. Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage)> MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , . A S < High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - , vs. VDS GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz) < High-power GaAs FET (small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET (small signal gain stage) > MGF0906B L & S Mitsubishi
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mgf0911A

Abstract: < High-power GaAs FET (small signal gain stage) > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , *2 :Channel-case Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain , =2.3GHz) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0911A L & S BAND , S21,S12 vs. f Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage
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Abstract: June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT , (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER , MITSUBISHI (2/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A , =25°C) MITSUBISHI (3/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A , MITSUBISHI (4/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A Mitsubishi
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MGF4951A MGF4952A

idq09

Abstract: MGFS45B < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 â'" 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use , ï'°C Tstg Storage temperature -55 to +150 ï'°C VGDO Parameter Mitsubishi Electric , matched power GaAs FET > MGFS45B2527B 2.5 â'" 2.7 GHz BAND / 30W MGFS45B2527B TYPICAL , =6MHz < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 â'" 2.7 GHz BAND / 30W
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idq09

MGFC47B3436

Abstract: MGFC47B < C band internally matched power GaAs FET > MGFC47B3436 3.4 ­ 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in , temperature Ratings 115 175 -55 to +150 *1 : Tc=25C Mitsubishi Electric Corporation puts the , Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 , internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 GHz BAND / 50W MGFC47B3436B RF TEST FIXTURE
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MGFC47B

mitsubishi microwave

Abstract: MGF1954A Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless , Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless Ceramic , ./2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1954A Microwave Power MES FET (Leadless
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MGF1801

Abstract: < High-power GaAs FET (small signal gain stage) > MGF1801B S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to , Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , =100mA,f=8GHz Vf method *1:Channel to ambient Publication Date : Apr., 2011 1 < High-power GaAs , CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage
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MGF1801

mgf4941al

Abstract: GD-32 Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE , MITSUBISHI (1/6) Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW , MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID , MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID , ) MITSUBISHI (4/6) 1.30 2.08 Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR
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MITSUBISHI electric R22

fet transistor a03

Abstract: MGFC4419 MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G Unit:millimeters DESCRIPTION , MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G TYPICAL , 0 (m A ) MITSUBISHI ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT , ) MITSUBISHI SEMICONDUCTOR , 30%. MITSUBISHI ELECTRIC (5/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G
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fet transistor a03 MGFC4419
Abstract: change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle Power , parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2 , specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 , . MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST Mitsubishi
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FET Spec sheet

Abstract: mitsubishi microwave MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL , dB m MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE , ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS , MITSUBISHI ELECTRIC (3/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE LOW-NOISE , : 130+20¿¿m MITSUBISHI ELECTRIC (4/6) MITSUBISHI SEMICONDUCTOR MGFC1801 FOR MICROWAVE
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FET Spec sheet
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , ï'°C/W Vf method *2 :Channel-case 1 Typ. A S < High-power GaAs FET (small signal , =2.3GHz) < High-power GaAs FET (small signal gain stage) > MGF0911A L & S BAND / 12W non - matched MGF0911A S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.6(A) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , , ratings, limits are subject to change. 1 < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched MGF09121A TYPICAL CHARACTERISTICS < High-power GaAs FET , (Ta=25ï'°C,VD=10V,ID=500mA, Reference Plane see Fig.1) < High-power GaAs FET (small signal gain Mitsubishi
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mitsubishi ordering information

Abstract: MGF4955A June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless
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mitsubishi ordering information mitsubishi package
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band , :Channel-case 1 < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND / 10W non - , vs. VDS GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz) < High-power GaAs FET (small signal gain stage , ) ) S11,S22 vs. f S21,S12 vs. f < High-power GaAs FET (small signal gain stage) > MGF0907B L & S Mitsubishi
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Abstract: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed , 18 14 Unit Max. -5 20 V dBm % dB ï'°C/W < High-power GaAs FET (small signal gain , CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic , .1) < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - Mitsubishi
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 â'" 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in , VGSO Gate to source breakdown voltage -15 V ID Drain current 6600 Mitsubishi , *2 : Channel-case 1 < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 â , GaAs FET > MGFK37V4045 14.0 â'" 14.5 GHz BAND / 5.5W MGFK37V4045 S-parameters( Ta=25deg.C , VDS Mitsubishi
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k-band amplifier

Abstract: MGFC5215 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5215 Notice : This is not a final , (22.0) dBc as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5215 , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5215 Notice : This is not a final specification , of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5215 Notice : This is , BLOCK DIAGRAM The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle
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k-band amplifier

FET GAAS marking a

Abstract: mitsubishi top side marking < Power GaAs FET > MGF1954A Leadless ceramic package DESCRIPTION The MGF1954A power MES FET , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , GaAs FET > MGF1954A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1954A Leadless ceramic package TYPICAL
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FET GAAS marking a mitsubishi top side marking

MGF1802

Abstract: MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR _ 6249829 MITSUBISHI { D I S C R E T E SC) 91D MGF1802 10084 DT-31-25 FOR MICROWAVE POW ER AMPLIFIERS I D E S C R IP T IO N The MGF1802, high-power GaAs FE T with an N-channel Schottky gate, is , ^AEI 0010DÖS MITSUBISHI SEMICONDUCTOR MGF1802 6249829 MITSUBISHI ( D I S C R E T E SC)~ 91D , MITSUBISHI {DISCRETE S O ~~ïï DE ODlDDflb 1 I - MITSUBISHI SEMICONDUCTOR MGF1802
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k-band amplifier

Abstract: MGFC5213 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5213 Notice : This is not a final , as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5213 Notice : This , of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5213 Notice : This is , MITSUBISHI ELECTRIC 0 25 as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY , BLOCK DIAGRAM The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High
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InGaAs HEMT mitsubishi

Abstract: top 205 Feb./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin , NFmin. MITSUBISHI (1/5) Feb./2005 Feb./2006 MITSUBISHI SEMICONDUTOR , /5) Feb./2005 Feb./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE , ./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , =12GHz NFmin. = 0.60dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 12.5dB (Typ.) MITSUBISHI
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top 205 4pin transistor
Abstract: Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin , MITSUBISHI (1/5) Feb./2005 Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW , MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S , ) Feb./2005 Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs , 0.55dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary Mitsubishi
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ka-band amplifier

Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T h is is not a final specification , dBm V mA V vg A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , : |jm) A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 , 2 > 0 Frequency [GHz] OC CO (/) A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI
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MGF4963BL

Abstract: InGaAs HEMT mitsubishi 16/Oct./2009 MITSUBISHI SEMICONDUTOR MGF4963BL SUPER LOW NOISE InGaAs HEMT , MITSUBISHI SEMICONDUTOR MGF4963BL SUPER LOW NOISE InGaAs HEMT Fig.1 3.2±0.1 (0.30 , MITSUBISHI (2/6) Gate Source Drain 16/Oct./2009 MITSUBISHI SEMICONDUTOR MGF4963BL , 20 Drain Current , ID (mA) MITSUBISHI (3/6) 16/Oct./2009 MITSUBISHI SEMICONDUTOR , ; RO4003C/ROGERS(er=3.38, t=0.51mm) MITSUBISHI (4/6) 16/Oct./2009 MITSUBISHI SEMICONDUTOR
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MGF4963B MGF496 RO4003C
Abstract: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG , Noise GaAs HEMT> MGF4964BL Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2 , -32) MGF4964BL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta Mitsubishi
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MGFS45V2735

Abstract: 051 166 MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially , : Channel-case MITSUBISHI ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - , June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 Mitsubishi
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051 166

F236

Abstract: MITSUBISHI SEMICONDUCTOR MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed , MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC44V3436 3.4 - 3.6GHz BAND , ) MITSUBISHI SEMICONDUCTOR MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET , temperature Storage temperature Mitsubishi Electric Corporation puts the maximum effort into making
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F236
Abstract: MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V3436A is an internally impedance-matched GaAs power FET especially , MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND , SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI , V A mA mA W deg.C deg.C Mitsubishi Electric Corporation puts the maximum effort into making Mitsubishi
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600GH 605GH

MGF1953A

Abstract: Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless , . /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless Ceramic , MITSUBISHI (4/5) Aug. /2004 Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave
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low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless , ) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , CHARACTERISTICS (Ta=25°C) MITSUBISHI (3/4) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A , (Typ.) MITSUBISHI Proprietary APPLICATION Not to be reproduced or disclosed without permission by Mitsubishi Electric C to K band low noise amplifiers QUALITY GRADE GG RECOMMENDED
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low noise hemt transistor
Abstract: < Power GaAs FET > MGF1953A Leadless ceramic package DESCRIPTION The MGF1953A power MES FET , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , GaAs FET > MGF1953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1953A Leadless ceramic package TYPICAL Mitsubishi
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5212 N o tice : T h is is not a final , MITSUBISHI SEMICONDUCTOR PRELIMINARY M í - c r u o iIo IVI N o tice : T h is is not , mm 0.95 mm A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR PRELIMINARY M í - c r u o iIo IVI N o tice : T h is is not , DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Am -
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 â'" 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in , VGSO Gate to source breakdown voltage -15 V ID Drain current 1800 Mitsubishi , : Channel-case 1 < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 â'" 14.5 GHz BAND / 2W MGFK33V4045 TYPICAL CHARACTERISTICS < X/Ku band internally matched power GaAs FET Mitsubishi
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 â'" 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in , VGSO Gate to source breakdown voltage -15 V ID Drain current 3500 Mitsubishi , *2 : Channel-case 1 < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 â , GaAs FET > MGFK35V4045 14.0 â'" 14.5 GHz BAND / 3.5W MGFK35V4045 S-parameters( Ta=25deg.C , VDS Mitsubishi
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products , internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W MGFK38A3745 TYPICAL , internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W MGFK38A3745 S-parameters Mitsubishi
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GAAS FET AMPLIFIER

Abstract: Band Power GaAs FET MITSUBISHI SEMICONDUCTOR MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET '(6&5,37,21 OUTLINE r The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 , SEMICONDUCTOR MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET MITSUBISHI ELECTRIC June , your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol VGDO , MITSUBISHI ELECTRIC dB 47 48 - dBm - 11 15 A 48 - % - f
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GAAS FET AMPLIFIER 39dBm 60W 12V flammable RF push pull power amplifier

MGFS45V2325A

Abstract: MITSUBISHI SEMICONDUCTOR MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially , ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 Mitsubishi , =25deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5108 N o tice : T h is is not a final , as of July '98 MITSUBISHI SEMICONDUCTOR lu ir p r u m « p r e l im in a r y N , as of July '98 MITSUBISHI SEMICONDUCTOR lu ir p r u m « p r e l im in a r y N , '98 MITSUBISHI SEMICONDUCTOR lu ir p r u m « p r e l im in a r y N o tice : T h , Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 -
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MGFK30M4045

Abstract: E 212 fet J 0010143 Ì MITSUBISHI SEMICONDUCTOR MGFK30M4045 I 6249829 MITSUBISHI ( D I , ,H 4 T f lE cl D0 1 D1 4 M D MITSUBISHI SEMICONDUCTOR MGFK30M4045 6249829 , MITSUBISHI {DISCRETE SC3- TL D E ltS M T flH T 0D1G142 7 | MITSUBISHI SEMICONDUCTOR M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED , an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band
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E 212 fet DC bias of gaas FET T-39-

MGFK44A4045

Abstract: SCL4035 MITSUBISHI SEMICONDUCTOR MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially , )(S.C.L) MITSUBISHI ELECTRIC CORPORATION July'04 (3/4) MITSUBISHI SEMICONDUCTOR MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC (4/4) July , first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making
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SCL4035
Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 N o tice : T h is is not a final , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 N o tice : T h is is not a final , MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 , MITSUBISHI SEMICONDUCTOR PRELIMINARY M rp n W MI I IVI N o tice : T h is is not a , DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Am -
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Abstract: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 â'" 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET , Symbol VGDO Mitsubishi Electric Corporation puts the maximum effort into making semiconductor , =2.5,2.6,2.7GHz,delta f=5MHz *3 :Channel-case 1 < L/S band internally matched power GaAs FET , GAIN vs. f P1dB vs. f IM3 vs. f < L/S band internally matched power GaAs FET > MGFS45A2527B Mitsubishi
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GF-51
Abstract: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 ­ 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in , +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric , Publication Date : Apr., 2011 1 < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 ­ , band internally matched power GaAs FET > MGFK33V4045 14.0 ­ 14.5 GHz BAND / 2W MGFK33V4045 Mitsubishi
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35W amplifiers

Abstract: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 ­ 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in , +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric , GaAs FET > MGFK35V4045 14.0 ­ 14.5 GHz BAND / 3.5W MGFK35V4045 TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 ­
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35W amplifiers

DC bias of gaas FET

Abstract: transistor GaAs FET s parameters 22 Typ 300 Max 400 Unit mA V mS W dB -5 % A MITSUBISHI ELECTRIC Z - 109 MITSUBISHI {DISCRETE SCI TL » F | b a 4 cl ñ 5 ci DD1G114 E MITSUBISHI SEMICONDUCTOR | ' , U S 4 | ~ MITSUBISHI SEMICONDUCTOR MGF2312 6249829 MITSUBISHI ( D I S C R E T E SC) 9 , MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST D1D113 MITSUBISHI SEMICONDUCTOR MGF2312 6 2 4 9 8 2 9 MITSUBI SH I (DISCRETE SC) 9 1D 10113 0 7 :3 1'£>5 FOR MICROW
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transistor GaAs FET s parameters

MGFC5211

Abstract: 340 mmic MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 Notice : This is not a final , ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 Notice , '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 Notice : This is not a , of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5211 Notice : This is , BLOCK DIAGRAM The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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340 mmic

transistor 305

Abstract: MGF4851 < Power GaAs HEMT > MGF4851A Leadless ceramic package DESCRIPTION The MGF4851A power InGaAs , QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2.5V , ID=25mA ORDERING INFORMATION Tape & reel 3 , . Publication Date : Apr., 2011 1 < Power GaAs HEMT > MGF4851A Leadless ceramic package Fig.1 Top , : mm Gate Source Drain Publication Date : Apr., 2011 2 < Power GaAs HEMT > MGF4851A
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transistor 305 MGF4851
Abstract: MGFC47B3538B 3.5 â'" 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use , in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making , deg.C/W MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM , internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W MGFC47B3538B RF TEST FIXTURE Mitsubishi
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F1375

Abstract: 9137 006 208 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , =25C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W MGFK38A3745 , =10MHz Publication Date : Apr., 2011 2 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­
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F1375 9137 006 208

LNA ka-band

Abstract: MITSUBISHI CAPACITOR MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T h is is not a final specification , A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY , as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T h is is not a , MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY N o tice : T , Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5109 N o tice : T h is is not a final , ) Frequency [GHz] A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR lu , Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip especially designed for , 30 No need mA vg Vd A MITSUBISHI ELECTRIC V as of July '98 MITSUBISHI SEMICONDUCTOR lu ir p r u m a p r e l im in a r y N o tice : T h is is not a final spe cifica -
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5214 N o tice : T h is is not a final , ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5214 N o tice , DESCRIPTION BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band , Size 1.99x1.60 mm2 A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY M r p r H 9 1I¿ IVI N o tice : T h is is not a final spe cifica tio -
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FS21

Abstract: MGFK35V4045 MITSUBISHI SEMICONDUCTOR MGFK35V4045 14.0â'" 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK35V4045 is an internally impedance matched GaAs power FET especially , : Channel to case A NOV. ' 97 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFK35V4045 14.0â'" 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25c) P1dB. GLP VS. f , > INPUT POWER Pjn (dBm) A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR
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FS21

MGF0905

Abstract: MGF0905A MITSUBISHI SEMICONDUCTOR MGF0905A L, S BAND POWER GaAs FET DESCRIPTION The MGF0905A, GaAs FET with an N-chanriel schottky gate, is designed for use in UHF band amplifiers. FEATURES , o z o Q < A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0905A L, S , °c/w * 1 : Channel to case * 2: Channel to ambient A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0905A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS lD vs. Vqs 3.0 2.5
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MGF0905 65GHz

MGFK37V4045

Abstract: MITSUBISHI SEMICONDUCTOR MGFK3 7V404S 14.0â'"14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK37V4045 is an internally impedance matched GaAs power FET especially , method - - 3.5 "C/W ♦ 1 : Channel to case A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGFK3 7V404S 14.0â'" 14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS , vs- vDS (f= 14.3 GHz) 7 8 9 10 DRAIN VOLTAGE VDS (V) A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI
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Abstract: MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V3642A is an internally impedance-matched GaAs power FET especially , MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET , ELECTRIC June/2004 POWER ADDED EFFICIENCY (%) 45 80 MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi
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051 166

Abstract: MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed , -'04 MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET , ELECTRIC June-'04 POWER ADDED EFFICIENCY P.A.E. (%) MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June
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MGFS45V2123A

Abstract: MITSUBISHI SEMICONDUCTOR MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially , : Channel-case MITSUBISHI ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 Mitsubishi , < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort
Mitsubishi
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MGFK39V4045

Abstract: MITSUBISHI SEMICONDUCTOR MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially , ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 Mitsubishi , safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into
Mitsubishi
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s band

Abstract: Band Power GaAs FET MITSUBISHI SEMICONDUCTOR MGF0904A L, S BAND POWER GaAs FET DESCRIPTION The MGF0904A. GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES , method - - 100 TC/W * 1 : Channel to case A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0904A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS 800 700 I 600 o H 500 z , DRAIN VOLTAGE VDS (VI 50 40 30 20 10 0 A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR
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5.5w

Abstract: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 ­ 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in , to +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi , GaAs FET > MGFK37V4045 14.0 ­ 14.5 GHz BAND / 5.5W MGFK37V4045 TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 ­
Mitsubishi
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5.5w

MGFC5212

Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5212 Notice : This is not a final , ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5212 Notice , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5212 Notice : This is not a final specification , as of July '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5212 Notice : This , BLOCK DIAGRAM The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
Mitsubishi
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 â'" 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in , VGSO Gate to source breakdown voltage -15 V ID Drain current 500 Mitsubishi , : Channel-case 1 < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 â'" 14.5 GHz BAND / 0.3W MGFK25V4045 TYPICAL CHARACTERISTICS < X/Ku band internally matched power GaAs FET Mitsubishi
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MGF1801BT

Abstract: < High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to , V V mA mA mA W C C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor , GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched MGF1801BT TYPICAL CHARACTERISTICS (Ta=25C) Publication Date : Apr., 2011 2 < High-power GaAs FET (small
Mitsubishi
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ID600A

Abstract: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , : mm Gate Source Drain Publication Date : Oct., 2011 2 < Power GaAs FET > MGF1952A
Mitsubishi
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ID600A
Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5110 N o tice : T h is is not a final , MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5110 N o tice : T h is is not a final , ] A MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR lu ir p r n , Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip especially designed , voltage 30 No need mA vg Vd A MITSUBISHI ELECTRIC V as of July '98 MITSUBISHI -
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Abstract: MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5213 N o tice : T h is is not a final , MITSUBISHI ELECTRIC as o f Ju ly '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY MGFC5213 , A MITSUBISHI ELECTRIC as o f Ju ly '98 MITSUBISHI SEMICONDUCTOR PRELIMINARY , DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Am , MITSUBISHI ELECTRIC Typ. Max. dB 9.0 3.0 3.0 29.0 - dBm as o f Ju ly '98 MITSUBISHI -
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Abstract: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM , MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , Noise GaAs HEMT > MGF4931AM 4pin flat lead package 2.10 ±0.1 1.30 ±0.05 Fig.1 (0 , .â' 5) Bottom (0.â'¢5) Side Unit: mm Gate Source Drain (GD-30) < Low Noise GaAs HEMT , Noise Figure, NF (dB) 2.2 < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package S Mitsubishi
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