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ZM13.SIDE Puls Gmbh BRACKET SIDE MNT FOR DIMENSION visit Digikey
ZM11.SIDE Puls Gmbh BRACKET SIDE MNT FOR DIMENSION visit Digikey
ZM12.SIDE Puls Gmbh BRACKET SIDE MNT FOR DIMENSION visit Digikey
ZM14.SIDE Puls Gmbh BRACKET SIDE MNT FOR DIMENSION visit Digikey
ZM15.SIDE Puls Gmbh BRACKET SIDE MNT FOR DIMENSION visit Digikey
SR42SIDE Tripp Lite SIDE PANEL FOR SR42UB RACK ENCL visit Digikey

mitsubishi top side marking

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Freq. Device Dept, High Freq. & Opt. Device Works, MITSUBISHI ELECTRIC Corp. 2 Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A
Abstract: Noise GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Side Top  ïƒ' ï , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless Mitsubishi
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Abstract: GaAs FET > MGF1954A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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FET GAAS marking a gaas fet marking
Abstract: > MGF1952A Leadless ceramic package Fig.1 Side Top  ïƒ' ïƒ' D 2 4 AA ïƒ' Bottom  ïƒ'   Square shape electrode is Drain from "A" side view Unit: mm ä , =12GHz Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
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Abstract: GaAs FET > MGF1953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: GaAs FET > MGF1951A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: Top rAA 2.2±0.1 1.7±0.1 (0.30) Unit : mm Side 0.15±0.05 1.35±0.2 , amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION , indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch , Inspection Sealing Separation DC Test, Marking RF Test (1) RF Test (2) QAT Taping, Shipping 100% Test, Ta Mitsubishi
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Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v GD-32 MGF4941CL
Abstract: QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2.5V , ID=25mA ORDERING INFORMATION Tape & reel 3 , letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter , . Publication Date : Apr., 2011 1 < Power GaAs HEMT > MGF4851A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2- Bottom 2) 1.2 0± 2. (2 20 ) 05 0 Mitsubishi
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MGF4851 transistor 305
Abstract: GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS , is a RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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HEMT marking K
Abstract: GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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ID600A
Abstract: Noise GaAs HEMT > MGF4953B Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , .1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V , ID , after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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MGF4953B-70 MGF4953B-01
Abstract: GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: ceramic package Fig.1 Side Top  ïƒ' ïƒ' J 5 6EG ïƒ' Bottom  ïƒ'   Square shape electrode is Drain from "A" side view Unit: mm 会 Gate 解 Source å , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , product. RoHS compliance is indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM Mitsubishi
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Abstract: MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to , ±0.05 Fig.1 (0.â' 5) (0.â' 5) ±0.1 1.25 Top ±0.1 2.05 0.30 +0.1 -0.05 +0.1 , ±0.05 (0.â' 0) (0.â' 5) Bottom (0.â'¢5) Side Unit: mm Gate Source Drain (GD-30) < Low , your circuit designs! ï'· Mitsubishi Electric Corporation puts the maximum effort into making Mitsubishi
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MGF4934CM MGF4934CM-75
Abstract: .â' 5±0.1 (0.30) Top Unit : mm 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , '· Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more Mitsubishi
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MGF4964BL
Abstract: MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , .â' 5) (0.â' 5) ±0.1 1.25 Top ±0.1 2.05 0.30 +0.1 -0.05 +0.1 0.30 -0.05 A , .â' 5) Bottom (0.â'¢5) Side Unit: mm Gate Source Drain (GD-30) < Low Noise GaAs HEMT , '· Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more Mitsubishi
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MGF4931AM
Abstract: =25.2GHz Gs = 10.0dB (Typ.) APPLICATION K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS , Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Gate to source , 0.5â'¢0.1 (2.3) (2.3) 3.2â'¢0.1 (0.30) rAA 2.6â'¢0.1 E 0.65â'¢0.1 (0.30) Top Unit : mm 2.2â'¢0.1 1.35â'¢0.2 Side 0.15â'¢0.05 1.7â'¢0.1 (GD-32) Mitsubishi
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AEC-Q101
Abstract: .â' 5±0.1 (0.30) Top Unit : mm 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , Micro-X type plastic package Keep safety first in your circuit designs! ï'· Mitsubishi Electric Mitsubishi
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MGF4963BL
Abstract: .1 with the marking side as shown below.) \ â'¢ illllll * Pin No.1 , illllll ill!!! , â  The marking side of the tube (2) The prevention of the vibration damage. The stopper plug is , gel on the top step in the box. A MITSUBISHI ELECTRIC 15 / 15 ) MITSUBISHI LS Is , MITSUBISHI ICs (TV) M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a , circuit realize no abjustment SIF,nothing coil AFT. FEATURES PIN CONFIGURATION (TOP VIEW) EQ -
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N52766FP M5M4V4160J 4194304-BIT 262144-WORD 16-BIT 002S3
Abstract: method (1) The packing direction of the device. (Facing the Pin No.1 with the marking side as shown below.) 4r Pin No.1 -The marking side of the tube (2) The prevention of the vibration damage. The , Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These , (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation -
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V23L HITACHI mitsubishi Lot number constitution PAL 007 a audio amplifier ic mitsubishi weekly code V17L mitsubishi running code MP016PC
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