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X-NUCLEO-IHM07M1 STMicroelectronics Three-phase brushless DC motor driver expansion board based on L6230 for STM32 Nucleo
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STM8AF6226TASSSX STMicroelectronics RISC MICROCONTROLLER

mitsubishi top side marking

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , Freq. Device Dept, High Freq. & Opt. Device Works, MITSUBISHI ELECTRIC Corp. 2 Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD Mitsubishi
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A
Abstract: Noise GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Side Top  ïƒ' ï , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless Mitsubishi
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Abstract: GaAs FET > MGF1954A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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FET GAAS marking a gaas fet marking
Abstract: > MGF1952A Leadless ceramic package Fig.1 Side Top  ïƒ' ïƒ' D 2 4 AA ïƒ' Bottom  ïƒ'   Square shape electrode is Drain from "A" side view Unit: mm ä , =12GHz Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Mitsubishi
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Abstract: GaAs FET > MGF1953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: GaAs FET > MGF1951A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: Top rAA 2.2±0.1 1.7±0.1 (0.30) Unit : mm Side 0.15±0.05 1.35±0.2 , amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION , indicated by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch , Inspection Sealing Separation DC Test, Marking RF Test (1) RF Test (2) QAT Taping, Shipping 100% Test, Ta Mitsubishi
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Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v GD-32 MGF4941CL
Abstract: QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2.5V , ID=25mA ORDERING INFORMATION Tape & reel 3 , letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter , . Publication Date : Apr., 2011 1 < Power GaAs HEMT > MGF4851A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2- Bottom 2) 1.2 0± 2. (2 20 ) 05 0 Mitsubishi
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MGF4851 transistor 305
Abstract: GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS , is a RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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HEMT marking K
Abstract: GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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ID600A
Abstract: Noise GaAs HEMT > MGF4953B Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , .1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V , ID , after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to , - 5 (0.30) (2.30) Square shape electrode is Drain 0± 0.5 5 0.0 from "A" side view Unit Mitsubishi
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MGF4953B-70 MGF4953B-01
Abstract: GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , =12GHz APPLICATION S to Ku band low noise amplifiers Fig.1 QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS , RoHS compliant product. RoHS compliance is indicated by the letter "G" after the Lot Marking , ) Square shape electrode is Drain 0.5 0± 05 0. from "A" side view Unit: mm Gate Source Drain Mitsubishi
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Abstract: ceramic package Fig.1 Side Top  ïƒ' ïƒ' J 5 6EG ïƒ' Bottom  ïƒ'   Square shape electrode is Drain from "A" side view Unit: mm 会 Gate 解 Source å , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED , product. RoHS compliance is indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM Mitsubishi
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Abstract: MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , indicated by the letter â'Gâ' after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to , ±0.05 Fig.1 (0.â' 5) (0.â' 5) ±0.1 1.25 Top ±0.1 2.05 0.30 +0.1 -0.05 +0.1 , ±0.05 (0.â' 0) (0.â' 5) Bottom (0.â'¢5) Side Unit: mm Gate Source Drain (GD-30) < Low , your circuit designs! ï'· Mitsubishi Electric Corporation puts the maximum effort into making Mitsubishi
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MGF4934CM MGF4934CM-75
Abstract: .â' 5±0.1 (0.30) Top Unit : mm 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , '· Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more Mitsubishi
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MGF4964BL
Abstract: MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , .â' 5) (0.â' 5) ±0.1 1.25 Top ±0.1 2.05 0.30 +0.1 -0.05 +0.1 0.30 -0.05 A , .â' 5) Bottom (0.â'¢5) Side Unit: mm Gate Source Drain (GD-30) < Low Noise GaAs HEMT , '· Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more Mitsubishi
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MGF4931AM
Abstract: =25.2GHz Gs = 10.0dB (Typ.) APPLICATION K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS , Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Gate to source , 0.5â'¢0.1 (2.3) (2.3) 3.2â'¢0.1 (0.30) rAA 2.6â'¢0.1 E 0.65â'¢0.1 (0.30) Top Unit : mm 2.2â'¢0.1 1.35â'¢0.2 Side 0.15â'¢0.05 1.7â'¢0.1 (GD-32) Mitsubishi
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AEC-Q101
Abstract: .â' 5±0.1 (0.30) Top Unit : mm 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.â'¡Â±0.1 (GD , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG , the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID , Micro-X type plastic package Keep safety first in your circuit designs! ï'· Mitsubishi Electric Mitsubishi
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MGF4963BL
Abstract: .1 with the marking side as shown below.) \ â'¢ illllll * Pin No.1 , illllll ill!!! , â  The marking side of the tube (2) The prevention of the vibration damage. The stopper plug is , gel on the top step in the box. A MITSUBISHI ELECTRIC 15 / 15 ) MITSUBISHI LS Is , MITSUBISHI ICs (TV) M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a , circuit realize no abjustment SIF,nothing coil AFT. FEATURES PIN CONFIGURATION (TOP VIEW) EQ -
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N52766FP M5M4V4160J 4194304-BIT 262144-WORD 16-BIT 002S3
Abstract: method (1) The packing direction of the device. (Facing the Pin No.1 with the marking side as shown below.) 4r Pin No.1 -The marking side of the tube (2) The prevention of the vibration damage. The , Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These , (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation -
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V23L HITACHI mitsubishi Lot number constitution PAL 007 a audio amplifier ic mitsubishi weekly code V17L mitsubishi running code MP016PC
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