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mitsubishi mgf

Catalog Datasheet MFG & Type PDF Document Tags

MGF7003

Abstract: MGF-7002A ^MITSUBISHI MGF-7004 (Packaged) ELECTRONIC DEVICE GROUP DESCRIPTION , package A B S O L U T E IW SYMBQL. i r~ 'l%AR!ifeTER TYPE RATINGS operating voltage MGF-7002A -1 0 V Gate operating voltage MGF-7002A -6 V MGF-7003 -6 MGF-7004 -6 MGF-7003 -6 MGF-7004 B -6 VGSO Gate to source voltage MGF-7002A MGF-7004 b Drain current 120 120 MGF-7002A Total power dissipation 300 mA 500 MGF-7003 MGF
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mitsubishi mgf

Abstract: 33dBm MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , phone QUALITY GRADE Note1: Connect to matching circuits. - GG *Mitsubishi Electric , of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , by using MITSUBISHI test fixture. Note2 : GMSK Pulse operation Note3 : Sampling inspection
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mitsubishi mgf 33dBm DCS1800 DCS1900 PCS1900 1785MH 1910MH PCN/DCS1800 1750MH

mitsubishi mgf

Abstract: transistor mgf power amplifier GaAsFET Module G aA sM M IC Mitsubishi High Frequency Devices Nanning System · N , - - - Frequency item,etc. i - number - Mitsubishi RF , field effect transistor follows both JIS naming system and the Mitsubishi naming system. (Example) M , 0 0 B Series, MGF1 8 0 1 B MGF1403BX - 01 Standard Item Quality Grade X : IGX V : IGV MGF - IM Series MGF C 36 V 5964 - 01 ' Standard spec. No.01, 5 1 = IM 3 -Freq.
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transistor mgf GF1402B

MGF-7201

Abstract: MGF7003 ) MGF-7002A MGF-7003 MGF-7004 -¿»MITSUBISHI ELECTRONIC DEVICE GROUP MGF 7 00 2 A OUTLINE DRAWINQ U , - a*. MGF-7002A MGF-7003 M GF-7004 A m itsu bishi ELECTRONIC DEVICE GROUP DESCRIPTION , system drop-ln and high per formance application. FEATURES MGF-7201 (Packaged) FREQUENCIES P A R T , MGF-7004 · Low noise figure, high gain NF = 3 .0 dB (TYP) @ f = 0 . 2 - 1.8 GHz Gp= 9 dB (TYP) @ f = 0 . 2 - 1 , 8 GHz · Mini mold package MGF-7201 · High output power PldB=40 ">W (TYP) < § > f= 1 4 -1 4
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MGF-7003 MGF-7201 MGF-7004 MGF7003 OP700 7002A MGF-7002A F-7000 F-7002A

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER , *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and , mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR , characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI ELECTRIC (2/20) Aug. '97 MITSUBISHI
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MGF 1200 RF MMIC MARK CODE AS 2SP53 mitsubishi microwave HPA 1200 RF MMIC MARK CODE -03 7169C

MGF4937

Abstract: MGFG5H1503 ] PRODUCT LIST Type Name Definition of High Frequency Devices I GaAs FET/GaN HEMT (Discrete) MGF 0951 P Plastic Mold : P GaN :G I GaN HEMT (Internally Matched) MGF C 50 G Freq. Band : C , Amplifier for WiMAX/Wi-Fi MGF C 42 V 5964 A Freq. Band : L, S, C, X, K, Ku Typical Output power in , configuration BA012J2C DC/DC Vref Gen. BA012J1 ANT-SW RF-IC ANT-SW BA012B6 MITSUBISHI , Keep safety first in your circuit designs! â'¢ Mitsubishi Electric Corporation puts the maximum effort
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MGF4937AM MGF4937 MGFG5H1503 MGFG5H1502 mgfc39v5964 mgf*S45V2527A MGF0904 MGF4921AM MGF4941AL MGF4935AM MGF4934CM H-CX587-R

MGF1802

Abstract: mgf431 -86.6 0.518 155.4 1.359 10.6 MITSUBISHI SEMICONDUCTOR (GaAs FE MGF431OD Serie SUPER , MGF4OI7D-OI -~.~`:-~ MGF4OI4E-65 .L ~ MGF49I8E-Ot MGF'49167-65 · - - 1.0 0.6 0.8 12 12 12 0 0 0 , ~. 0.5 1.0 4.0 12 12. · 0.2-1.8 Number Part MGFO9O4A-Ol MGF'0905A-OI - 142 MIN , Page 4-9 4-12 MGFl6OIB-Ol . * 1: P0 Mitsubishi
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MGF43180 MGF1902B-65 MGF1802 mgf431 MGF4314D MGF4316D MGF4317D MGF4318D MGR43

MGF4918D

Abstract: MGF4910D ! MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs , parasitic losses, and has a configuration suitable for microstrip circuits. The MGF 4 9 1 OD Series is , b ie n t A MITSUBISHI ELECTRIC 3 - 27 MITSUBISHI SEMICONDUCTOR MGF4910D , R E N T l D (m A I 3 - 28 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR , -4 8 .2 -6 0 .5 -7 3 .1 -8 5 .6 MITSUBISHI ELECTRIC 3- 29 MITSUBISHI SEMICONDUCTOR
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MGF4916D MGF4917D MGF4918D mgf4914 F4914D F4916D F4917D F4918D MGF4914D

mitsubishi mgf

Abstract: curve tracer MITSUBISHI TL D¡T|bEiHflE1 0010135 MITSUBISHI SEMICONDUCTOR MGF X 34S 9398 (DISCRETE , MITSUBISHI {DISCRETE S O 6 2 4 9 82 9 MITSUBISHI TÎ »F|t.54c ]flEc i 001D133 t , V ds 7 f - 9 .3 ~ 9 .8 G H z A MITSUBISHI ELECTRIC 2 -1 2 9 MITSUBISHI {DISCRETE SC> TL DD1G13M A MITSUBISHI SEMICONDUCTOR 6249829 MITSUBISHI (DISCRETE SC
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curve tracer MGFX34S9398

Tracer 176

Abstract: MGF 1200 Y M A T C H E D _ 6249829 MITSUBISHI DESCRIPTION ( D I S C R , MITSUBISHI ELECTRIC T I » F I liEmtöet gd i g ì m í o M IT S U B IS H I SEMICONDUCTOR MGFK35M4045 6249829 MITSUBISHI ( D I S C R E T E SC) 9 1D 10149 D FO R M IC R O W A V E P O W E R A M P L IF , .0 9 0 -1 1 9 - 130 I A MITSUBISHI ELECTRIC 2-145 W W W .1 1 1 1 1 1 1 ' "B B T f 11 6249829 MITSUBISHI DE | b S 4 t iñ5c i DOIOISO f e , M IT S U B IS H I SEMICONDUCTOR
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Tracer 176 DC bias of gaas FET

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , Negative voltage generator Matching circuit Pin HPA MGF7170AC *Mitsubishi Electric , of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary , . Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI
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715GH

MGF4310

Abstract: MGF4910 . Mitsubishi offers different series of HEMT devices to meet the continuing demands of the low noise market. ^MITSUBISHI a Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES D Series - 0.25um X 200um , (dB) TYP/MIN 16.0 TYP 16.0 TYP 11.5/9.5 11.5/9.5 3 . 5.2 ^.MITSUBISHI ELECTRONIC DEVICE , ^MITSUBISHI ELECTRONIC DEVICE GROUP Die_ MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES , 2.1 MGF4310C/ MGF4910C 0.58 0.89 1.20 1.32 1.58 MGF-4314C/ MGF4914C 0.46 0.71 0.95 1.06 1.28 MGF4315C
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MGF4314C-01 MGF4917C-01 MGF4317D-01 MGF4318E-01 MGF4318E-30 MGF4917 MGFC4418 MGF4318 MGFC4416 MGF4317 MGFC4414D-02 MGFC4414D-03 MGFC4414E-02 MGFC4414E-03 MGFC4416D-02 MGFC4416D-03

MGF4918D

Abstract: mgf4914 MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT , losses, and has a configuration suitable for microstrip circuits. The MGF 491OD Series is mounted in the , '" â'¢ Mitsubishi ELECTRIC A 3â'"27 MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE , 0 1.0 2.0 3.0 4.0 5.0 DRAIN TO SOURCE VOLTAGE VDs M bSMRfiSR DDlti64D ?5T 3â'"28 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT
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GD-16 M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT

MGF4918D

Abstract: MGF4914D MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT , losses, and has a configuration suitable for microstrip circuits. The MGF 491OD Series is mounted in the , /W * 1 : Channel to ambient MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER , S g u o 10 « yj < 8 10 15 20 25 DRAIN CURRENT 1D (mA) MITSUBISHI SEMICONDUCTOR , 0.089 -86 6 0 518 1S5.4 1 359 10 6 MITSUBISHI SEMICONDUCTOR MGF4910D Series TAPE CARRIER
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M5M27C102 A0523 MGF4916C RV15 J100 GD16
Abstract: MITSUBISHI SEMICONDUCTOR MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG , Method Above parameters, ratings, limits are subject to change. (1/22) Mitsubishi Electric , ) Mitsubishi Electric Feb./2005 MGF0951P TYPICAL CHARACTERISTICS IM3 vs.Po -20 Vds=10V Ids(RFoff , -70 15 20 25 30 Po (Total) (dBm) (3/22) Mitsubishi Electric Feb./2005 , 0951P 1.08 a:Gate b:Dorain c:Source Unit:mm Fig1.OUTLINE DRAWING (4/22) Mitsubishi Mitsubishi
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0951P

Abstract: MGF0951P MITSUBISHI SEMICONDUCTOR MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG , . (1/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS Po,Gp,PAE vs. Pin , 2.35 freq. (GHz) (2/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS , ) Mitsubishi Electric Mar./2005 MGF0951P S PARAMETERS (Ta=25°C,VD=10V,ID=200mA) f (MHz) Magn. 0.847 , Fig1.OUTLINE DRAWING (4/42) Mitsubishi Electric Mar./2005 VG MGF0951P TESTFIXTURE FREQ
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60Ghz

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw INFORMATION via E-mail New Mitsubishi Laser Diodes Mitsubishi 35mW 658nm Laser Diode - ML1016R - Ø5.6mm package Mitsubishi 35mW 685nm Laser Diode - ML1012R - Ø5.6mm package Mitsubishi 50mW 785nm Laser Diode , leading manufacturers i.e. Mitsubishi ­ Sanyo ­ Sony Toshiba Offering both aspheric and multi-element , Diodes Mitsubishi | Sanyo | Sony | Toshiba | Hitachi DIODES.PDF (84K) Click on the file name to , Page for details. MITSUBISHI Visible and Near-infrared Laser Diode Specifications Several new
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ML64114R biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M DL4038-025 DL7040-201 11JUN99

SEMICON INDEXES

Abstract: GM378 MINI-CIRCUITS MCT MISTRAL SpA MIS (MISTRAL) /NUOVA MISTRAL NMS MITSUBISHI ELECTRIC CORP. MIT MITSUBISHI
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SEMICON INDEXES GM378 Ericsson SPO 1410 Ericsson RBS 6102 irf 1963 Solitron Devices pnp, 200 V, 20A VV276