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TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP visit Texas Instruments

mitsubishi gaAs

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gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD , MITSUBISHI GaAs FET QL-1104E-A (July/2008) [4pin flat lead package] GD-30 Top View Source , . Device Works, MITSUBISHI ELECTRIC Corp. 3 Marking manner of MITSUBISHI GaAs FET QL , Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL] GD , . Device Works, MITSUBISHI ELECTRIC Corp. 5 Marking manner of MITSUBISHI GaAs FET [micro-X package
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MGF4851A MGF4921AM gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet marking J GD-26 MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A

MGFS45H2201G

Abstract: MGFS40H2201G GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the , MITSUBISHI GaAs devices: The best solution for realizing the information era. Communication networks, such , Multimedia Network WiMAX Features We provide a variety of solutions to e provide variety variety GaAs , providing a variety of GaAs products designed for satellite communication systems to base stations and cellular handset applications. Noise Figure NF (dB) at 12GHz MAP For SELECTION GaAs FET SERIES
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MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF4953A MGF4934AM MGF4931AM GD-16 MGF1908A GD-27

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary , ELECTRIC (2/16) Aug. '97 MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER
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MGF 1200 mitsubishi mgf 715GH

MGF 1200

Abstract: mitsubishi mgf MITSUBISHI SEMICONDUCTOR MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER , mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER , ) MITSUBISHI ELECTRIC (6/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information , evaluation Pin (dBm) MITSUBISHI ELECTRIC (7/20) Aug. '97 MITSUBISHI SEMICONDUCTOR
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RF MMIC MARK CODE AS 2SP53 HPA 1200 mitsubishi microwave RF MMIC MARK CODE -03 7169C
Abstract: MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER , ) 12 16 Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR , Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR -
OCR Scan
F7170A
Abstract: =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , (4/12) M ar/97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER , .'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout, Idt, r|t for , UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad Unit:mm MITSUBISHI ELECTRIC M ar.'97 (11/12) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7168C UHF BAND GaAs -
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1785MH 1910MH DCS1800 PCN/DCS1800 1750MH
Abstract: MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Input , ELECTRIC (4/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs -
OCR Scan
Abstract: MITSUBISHI SEM ICO ND UC TO R MGF7169C Technical Note UHF BAND GaAs POW ER AM , malfunction or mishap. M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R , IS H I E L E C T R IC Aug '97 MITSUBISHI SEM ICO NDUCTO R Preliminary , Harmonics M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R , B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R Preliminary -
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GF7169C

1715G

Abstract: 17-15G MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change , ) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND G aAs POWER AMPLIFIER , . '97 M ITS U B ISH I ELECTRIC (2/16) MITSUBISHI SEMICONDUCTOR Preliminary , ELECTRIC (3/16) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND , =2.6V CDMA evaluation Aug '97 M ITS U B ISH I E LEC TR IC (4/16) MITSUBISHI SEMICONDUCTOR
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1715G 17-15G MGF7170A

mitsubishi mgf

Abstract: 33dBm MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , MITSUBISHI ELECTRIC (2/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , /12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER
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33dBm DCS1900 PCS1900

MGF2430A

Abstract: MGF4919 MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR LOW NOISE DEVICES , '" 1.2dB MGF4918E â'¢ NF MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR , MGFC36V4450A MGFC42V4450 MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER , MGF2407A MGF2430A MGFC36V5964A MGFC42V5964 L>.->->-[> >- - 42dBm MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER DEVICES) 7.7 ~ 8.5GHz
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MGF4714AP MGF4914D MGF1923 MGF1402B MGF4919 MGF2430 MGF4919E MGF4914E MGF49T4D

MGF0805A

Abstract: MITSUBISHI example < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , notice. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage , 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A
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MITSUBISHI example s band
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , :Channel-case Specifications are subject to change without notice. 1 Typ. mA mS < High-power GaAs , DRAWING < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A S-parameters( Ta=25deg.C , VDS=10(V),IDS=400(mA) ) < High-power GaAs FET (small Mitsubishi
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mitsubishi 4a fet

Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 ­ , ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 , =25deg.C Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2
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mitsubishi 4a fet

CR10

Abstract: GaAs FET 15A PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification , : Channel-case MITSUBISHI ELECTRIC (1/4) Spe. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR , )EVM(%) 13 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final , ELECTRIC (3/4) Sep. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not , BAND 50W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric
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MGFC47B3436B CR10 GaAs FET 15A GF-60

bt 1696

Abstract: transistor z14 smd MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , change without notice. 1 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR , PATTERN 2 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & , . / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , . / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched
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bt 1696 transistor z14 smd transistor z15 smd z14 smd Z25 SMD smd z13 GF-50
Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 â , breakdown voltage VGSO Mitsubishi Electric Corporation puts the maximum effort into making , :Channel-case 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND , band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W Pout , Id Mitsubishi
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smd z13

Abstract: of bt 1696 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] S-parameters , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET
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of bt 1696 Z12 SMD
Abstract: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â'" 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use , +175 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products , :Channel-case 1 < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â'" 3.6 GHz BAND / 30W MGFC45B3436B TYPICAL CHARACTERISTICS < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â Mitsubishi
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EVM12

Abstract: MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs , ) Mar. 2006 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY , (2/6) Mar. 2006 ID(A) ID(A) MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - , 0.907 60 MITSUBISHI ELECTRIC (3/6) Mar. 2006 MITSUBISHI SEMICONDUCTOR , ELECTRIC ( 4 / 6) Mar. 2006 MITSUBISHI SEMICONDUCTOR MGFC45B3436B 3.4 - 3.6GHz BAND
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EVM12
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