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LTM8022IV#PBF-ES Linear Technology 1A, 36V DC/DC Module visit Linear Technology - Now Part of Analog Devices
LTM8020IV#PBF-ES Linear Technology 200mA, 36V DC/DC Module visit Linear Technology - Now Part of Analog Devices
LTM8023IV#PBF-ES Linear Technology 2A, 36V DC/DC Module visit Linear Technology - Now Part of Analog Devices
LT3585EDDB-0#PBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-0 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

mitsubishi electric igbt module

Catalog Datasheet MFG & Type PDF Document Tags

mitsubishi PM20CSJ060

Abstract: mitsubishi PM30CSJ060 Modules (IPMs) Preceding Page © MITSUBISHI ELECTRIC CORPORATION IGBT Modules Voltage Rating , (Intelligent Power Module) 7-Pack IPM (Intelligent Power Module) Preceding Page © MITSUBISHI ELECTRIC , -Pack IPM (Intelligent Power Module) Preceding Page © MITSUBISHI ELECTRIC CORPORATION 1200V Single , Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page © MITSUBISHI ELECTRIC , Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION
Mitsubishi
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ps21a79

Abstract: mitsubishi intelligent power module MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 0.88 , Fig.2 2 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD TYPE , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79
Mitsubishi
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mitsubishi intelligent power module AC100 E80276

PS22A78

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A78-E , resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min , 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m·k). 1 Sep. 2010 MITSUBISHI , cases) 4 Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A78-E
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PS22A78 AC400V

PS22A73

Abstract: 1200v 10a MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A73 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 1.51 , cases) 4 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A73 TRANSFER-MOLD TYPE , in mm 9 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module
Mitsubishi
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1200v 10a IC17A

PS21A7A

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD , resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min , 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m·k). 1 Sep. 2010 MITSUBISHI , Fig.2 2 Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD TYPE
Mitsubishi
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ps21a79

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD , resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min , 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m·k). 1 Dec. 2010 MITSUBISHI , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD TYPE , Dec. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79
Mitsubishi
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PS22A74

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A74 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 1.15 , cases) 4 Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A74 , . 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A74
Mitsubishi
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PS21A7A

Abstract: mitsubishi electric igbt module MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD , resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min , 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m·k). 1 Dec. 2010 MITSUBISHI , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD TYPE , Dec. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A
Mitsubishi
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mitsubishi electric igbt module PS21A

PS22A78E

Abstract: PS22A78-E MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A78-E , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 0.77 , cases) 4 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A78-E TRANSFER-MOLD TYPE , in mm 9 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module
Mitsubishi
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PS22A78E

mosfet based power inverter project

Abstract: MS 1307 mosfet Project Group, Advanced Technology R & D Center, Mitsubishi Electric Corporation, Japan Hidekazu Yamamoto Manager, Power Device Development Dept., Power Device Works, Mitsubishi Electric Corporation , Center, Mitsubishi Electric Corporation, Japan Abstract: At Mitsubishi, R & D work on SiC Power , . Tr. Module Power MOS. Module Trench MOS Sub µm MOS IGBT 1995 : Fourth Generation MOSFET 1995 Fourth Generation MOSFET IGBT Module (1.5m design rule). (1.5m design rule). 1995
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mosfet based power inverter project MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC

PS22A76

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A76 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 0.88 , cases) 4 Dec. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A76 TRANSFER-MOLD TYPE , first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making
Mitsubishi
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Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD , Junction to case thermal resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A , 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A Mitsubishi
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Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD , Junction to case thermal resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 , 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 Mitsubishi
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ps22a72

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A72 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 2.24 , cases) 4 Dec. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A72 TRANSFER-MOLD TYPE , first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making
Mitsubishi
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PS22A74

Abstract: PS22A MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A74 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 1.15 , cases) 4 Dec. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A74 TRANSFER-MOLD TYPE , first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making
Mitsubishi
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PS22A optocoupler S A7 357 11010C

PS22A76

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A76 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 0.88 , cases) 4 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A76 TRANSFER-MOLD TYPE , in mm 9 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module
Mitsubishi
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Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A72 TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 2.24 , cases) 4 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS22A72 TRANSFER-MOLD TYPE , in mm 9 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module Mitsubishi
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PS21A7A

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD , ) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min. Limits Typ. Max. 0.77 , Fig.2 2 March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD TYPE , March 2011 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A
Mitsubishi
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Abstract: in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making , any other rights, belonging to Mitsubishi Electric Corporation or a third party. ·Mitsubishi Electric , publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice , Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest , technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility Mitsubishi
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UL1557

PS21A79

Abstract: MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD , resistance (Note 2) Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Min , 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/m·k). 1 Sep. 2010 MITSUBISHI , Fig.2 2 Sep. 2010 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module , MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD TYPE
Mitsubishi
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