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TC74HC02APF Toshiba America Electronic Components IC HC/UH SERIES, QUAD 2-INPUT NOR GATE, PDIP14, 0.300 INCH, 2.54 MM PITCH, LEAD FREE, PLASTIC, DIP-14, Gate visit Digikey Buy
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2SC4207-Y(TE85L,F) Toshiba America Electronic Components TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SMV, 2-3L1A, 5 PIN, BIP General Purpose Small Signal visit Digikey Buy
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mg300* toshiba

Catalog Datasheet MFG & Type PDF Document Tags

md 5408

Abstract: MG300G1UL1 leg-cm Mounting - 30 MG300H1UL1-1 TOSHIBA CORPORATION A toshiba {discrete/opto} SSi^S 9097250 , \ 0 100 200 300 400 800 600 700 COLLECTOR-EMITTER VOLTAOE VCE (v) CT1A2I2) - 50 - MG300H1UL1-4 , 7-33-3^ TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA GTR MODULE MG300G1UL1 SILICON NPN TRIPLE , (DISCRETE/OPTO) 90D 16039 0 33 SEMICONDUCTOR TOSHIBA MG300G1UL1 TECHNICAL DATA i ELECTRICAL , ) TO MT| 10^7550 001LQ40 1 90D 16040 DT-33-3S SEMICONDUCTOR TOSHIBA MG300G1UL1 TECHNICAL DATA VCE
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md 5408 MG300H1UL1 MG300 4.90g transistor ES300 09A1A EGA-MG300G1UL1-1 T-33-35 300H1UL1 MC300H1UL1-3 MG300H1UL

mg300* toshiba

Abstract: 300AVGE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300J2YS50 GTR Module Unit in mm Silicon N , 2/6 MG300J2YS50 3/6 PW03190796 TOSHIBA CORPORATION MG300J2YS50 TOSHIBA CORPORATION PW03190796 4/6 MG300J2YS50 5/6 PW03190796 TOSHIBA CORPORATION MG300J2YS50 , ) - A A 3/3 N¥m Equivalent Circuit TOSHIBA CORPORATION PW03190796 1/6 MG300J2YS50 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP
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mg300* toshiba 300AVGE TOSHIBA MG300J2YS50

MG300Q1US41

Abstract: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching , electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum , current Screw torque (Terminal : M4 / M6 / mounting) 1 A A 2001-04-16 MG300Q1US41 , 0.2 Thermal resistance Rth (j-c) 2 °C / W 2001-04-16 MG300Q1US41 3 2001-04-16 MG300Q1US41 4 2001-04-16 MG300Q1US41 5 2001-04-16 MG300Q1US41 RESTRICTIONS ON PRODUCT
Toshiba
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2-109A4A
Abstract: ) SÃA- MG300K1FK1-4 TOSHIBA {D ISCRETE/OPTO} T O 9097250 TOSHIBA (DISCRETE/OPTO) ¿ /o Ã' h , ) SEMICONDUCTOR TECHNICAL DATA TOSHIBA CORPORATION FETj| l u i tâ'™diiu 90D 16368 MG300M1FK1 , r TOSHIBA -CDISCRETE/0PT039097250 TOSHIBA tfo S n b n ~TD »TJiOIVdiiü 90D SEMICONDUCTOR üüiibdbd D7 -3 3 -35 " - 16363 TOSHIBA GTR MODULE ' MG 3 , /Mounting) - Base Current _ 1984.-5-25 -40 ~125 2500 (AC 1 tttnute) TOSHIBA -
OCR Scan
IC-300A GCA-MG300M1FK1-3 12S1C

MG300Q1US41

Abstract: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching , electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g Maximum , current Screw torque (Terminal : M4 / M6 / mounting) 1 A A 2001-04-16 MG300Q1US41 , 0.2 Thermal resistance Rth (j-c) 2 °C / W 2001-04-16 MG300Q1US41 3 2001-04-16 MG300Q1US41 4 2001-04-16 MG300Q1US41 5 2001-04-16 MG300Q1US41 RESTRICTIONS ON PRODUCT
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mg300* toshiba

Abstract: MG300Q1US51 MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching , JEDEC JEITA TOSHIBA 2-109F1A Weight: 465 g (typ.) Maximum Ratings (Ta = 25 , current Screw torque (Terminal : M4 / M6 / mounting) A 1 A 2003-12-19 MG300Q1US51 , recovery time test circuit & timing chart 2 2003-12-19 MG300Q1US51 3 2003-12-19 MG300Q1US51 4 2003-12-19 MG300Q1US51 5 2003-12-19 MG300Q1US51 6 2003-12-19
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Abstract: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN , _MG75H6EL1-1 - 257 - TOSHIBA CORPORATION TOSHIBA { DISC RE TE /O PT O} ~TD 9097250 TOSHIBA , US â'¢c/w MG75H6EL1-2 CTIA2C) - 258 TOSHIBA CORPORATIOr TOSHIBA {DI SC RE TE/O PT O -
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MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1

MIG50Q7CSB1X

Abstract: IPM toshiba (#) *MG800J2YS50A - - - MG200Q2YS60A - - - (#) MG300Q2YS60A - - - (#) MG400Q2YS60A - - - (# , SUBSIDIARIES AND AFFILIATES 020220 (D) Toshiba America Electronic Components, Inc. Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd. Düsseldorf Head Office Headquarters-Irvine, CA , : (089)748595-0 Fax: (089)748595-42 Toshiba Electronics France S.A.R.L. Immeuble Robert Schuman 3 Rue de Rome F-93561, Rosny-Sous-Bois, Cédex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Toshiba
Toshiba
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MG150J7KS60 MG200J6ES60 MG400J2YS60A MG600J2YS60A MG600Q2YS60A MG400V2YS60A MIG50Q7CSB1X IPM toshiba MG300Q2YS mg200q2 MIG75Q7CSB1X E87989
Abstract: ¡ | 90D 16112 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA SEM ICO N D U CTO R MG300Q1ÃK1 1 , TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA (DISCRETE/OPTO) TOSHIBA D T â'3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 , E V BE(flat) (V) MG300Q1UK1 t,n .v -*c i 117 - TOSHIBA CORPORATION TOSHIBA , (Terminal M4/M6/Mounting) - 2500 (AC 1 Minute) V 20/30/30 kg-cm MG300Q1UK1 â'" 115 â -
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109A1A
Abstract: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching , case. Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 465 g (typ.) 2-109F1A , range Isolation voltage Screw torque (Terminal : M4 / M6 / mounting) 1 2003-12-19 MG300Q1US51 , MG300Q1US51 3 2003-12-19 MG300Q1US51 4 2003-12-19 MG300Q1US51 5 2003-12-19 MG300Q1US51 6 2003-12-19 MG300Q1US51 RESTRICTIONS ON PRODUCT USE · The information contained Toshiba
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MG300Q1US51

Abstract: 80c400 MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching , MG300Q1US51 3 2001-04-20 MG300Q1US51 4 2001-04-20 MG300Q1US51 5 2001-04-20 MG300Q1US51 6 2001-04-20 MG300Q1US51 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is , isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g 2-109F1A Maximum , 2001-04-20 MG300Q1US51 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test
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80c400

TOSHIBA MG300J2YS50

Abstract: MG300J2YS50 MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power , 2 2001-08-09 MG300J2YS50 3 2001-08-09 MG300J2YS50 4 2001-08-09 MG300J2YS50 5 2001-08-09 MG300J2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is , (max) (IC = 300A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) 2-109C1A , current Screw torque (Terminal / mounting) 1 A A 2001-08-09 MG300J2YS50 Electrical
Toshiba
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TOSHIBA MG300J2YS50

Abstract: mg300j2ys50 MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power , 2 2001-08-09 MG300J2YS50 3 2001-08-09 MG300J2YS50 4 2001-08-09 MG300J2YS50 5 2001-08-09 MG300J2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is , ) (IC = 300A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) 2-109C1A , current Screw torque (Terminal / mounting) 1 A A 2001-08-09 MG300J2YS50 Electrical
Toshiba
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MG300Q2YS50

Abstract: 2-109C1A MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching , EIAJ TOSHIBA Weight: 430g 1 2-109C1A 2001-04-20 MG300Q2YS50 Maximum Ratings (Ta = , MG300Q2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the , Thermal resistance Rth (j-c) 2 °C / W 2001-04-20 MG300Q2YS50 Note 1: Switching time and reverse recovery time test circuit & timing chart 3 2001-04-20 MG300Q2YS50 4 2001-04-20
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YS40

Abstract: MG300Q2YS40 TOSHIBA MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2 YS40 HIGH POWER , information contained herein is subject to change without notice. 1997-03-03 1/6 TOSHIBA MG300Q2YS40 , Diode â'" â'" 0.25 1997-03-03 2/6 TOSHIBA MG300Q2YS40 OUTLINE : TOSHIBA 2-109D2A Unit in mm , 1 Weight : 550g (Typ.) 1997-03-03 3/6 TOSHIBA MG300Q2YS40 IC - VCE IC - VCE Ur ,i J 15- L2 , ) 1997-03-03 4/6 TOSHIBA MG300Q2YS40 vce,vge - Qg switching time - iq 1000 800 600 400 200 / t
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OCR Scan
YS40 MG300Q 961001EAA2

mg300j2ys50

Abstract: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power , ," or "TOSHIBA Semiconductor Reliability Handbook" etc. 2001-02-22 1/5 MG300J2YS50 , .) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g (Typ.) 2-109C1A , current Screw torque (Terminal / mounting) A A 000707EAA2 · TOSHIBA is continually working , physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with
Toshiba
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Abstract: TOSHIBA TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 MG300Q2YS50 HIGH , contained herein is subject to change without notice. 1997 03-03 1/7 - TOSHIBA MG300Q2YS50 , *£ o ic i - T fïy - 1 L VCC VCE 90% L TOSHIBA MG300Q2YS50 800 640 480 320 ¡ , CURRENT s O 3 3 o tr1 0 Cß 1 I-I o CO CO Iß , 961001EAA1 # TOSHIBA is continually working to improve the quality and the reliability of its -
OCR Scan

MG300Q2YS50

Abstract: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching , EIAJ TOSHIBA Weight: 430g 2-109C1A 1 2002-08-22 MG300Q2YS50 Maximum Ratings (Ta = 25 , MG300Q2YS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the , nF VCE = 10V, VGE = 0, f = 1MHz 2 2002-08-22 MG300Q2YS50 Note 1: Switching time and reverse recovery time test circuit & timing chart 3 2002-08-22 MG300Q2YS50 4 2002-08-22
Toshiba
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S60C

Abstract: MG300Q1US41 TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 U S 4 1 HIGH , subject to change without notice. 1997-03-03 1/5 TOSHIBA MG300Q1US41 ELECTRICAL CHARACTERISTIC (Ta = , 1997-03-03 2/5 TOSHIBA MG300Q1US41 IC - VCE VCE - VGE 600 400 fi D O « H 200 / r 20 A , > « a 0 400 800 1200 1600 2000 2400 CHARGE Qg (nC) 1997-03-03 3/5 TOSHIBA MG300Q1US41 switching , TOSHIBA MG300Q1US41 safe operating area reverse bias soa 1000 500 300 100 50 30 Ic MAX. (PULSED
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OCR Scan
S60C

TOSHIBA IGBT DATA BOOK

Abstract: MG300J1US51 MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 Unit: mm High Power , Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 2001-02-22 1/5 MG300J1US51 , .) (IC = 300A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 465g (Typ.) 2-109A4A , current Screw torque (Terminal / M4 / M6 / mounting) A A 000707EAA2 · TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to
Toshiba
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TOSHIBA IGBT DATA BOOK
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