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marking code pp

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: detection circuit applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724 , Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 , International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01 Semtech Electronics
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Abstract: PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol Absolute Maximum Ratings , , Stock Code: 724) ® Dated : 15/12/2005 1N728WS SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724 , Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/12/2005 Semtech Electronics
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Abstract: detection circuit applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724 , Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09 , International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724 Semtech Electronics
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JT MARKING

Abstract: MARKING JM Current Voltage @ Ipp I Marking Code pp UNI- SMAJ90(C)A 90 100 111 1.0 5.0 , : Bi-directional devices have no polarity indicator.) Marking: Date Code and Marking Code See Page 3 Weight , /datasheets/ap02007.pdf. Marking Information YWW XX DS19005 Rev. 9 - 2 XX = Product type marking code (See Page 2) = Manufacturers' code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 3 of 3 SMAJ5.0(C)A - SMAJ170(C)A Diodes
Diodes
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JT MARKING MARKING JM SMAJ85 SMAJ10 SMAJ11 SMAJ12 MIL-STD-202 5000/T
Abstract: Units W KV O C C O August 12.2010-Rev.00 PAGE . 1 PJSD03W~PJSD36W PJSD03W Marking 03W , s) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W Parameter , State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter Reverse , Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse Stand-Off , Capacitance Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=12V I PP=1A 0Vdc PanJit International
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MIL-STD-750 2010-R RB500V-40

PJSD36W

Abstract: marking code 12W PJSD03W Marking 03W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 s) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W , s) Off State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter , State Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse , =12V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 13.3 Typical 130 50 Max. 12 15 1 19 Units V V A V pF
PanJit International
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marking code 12W marking code 05W SOD-323 MARKING 05W SOD-323 marking PP code PANJIT PJSD36W 2002/95/EC IEC61249

8V 1A TVS diode

Abstract: pjsd36w PJSD03W Marking 03W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 s) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W , s) Off State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter , State Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse , =12V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 13.3 Typical 130 50 Max. 12 15 1 19 Units V V A V pF
PanJit International
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8V 1A TVS diode 2011/65/EU 2013-REV

MARKING code mf stmicroelectronics

Abstract: marking code stmicroelectronics The "T" field contains the process technology code. Figure 3. SO8 Narrow Body: Back-Side Marking , (EIAJ) Figure 4. SO8 Wide Body: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09779 On , the process technology code. Figure 5. SO8 Wide Body: Back-Side Marking AAAAAAA BBBBBBB , MP 70 VFQFPN 8 6x5x1 PITCH 1.27 Figure 7. MLP 5x6: Top-Side Marking DDDDDDDD PP LLL WX , PITCH 1.27 Figure 8. MLP 8x6: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09781 On
STMicroelectronics
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AN1995 MARKING code mf stmicroelectronics marking code stmicroelectronics VDFPN 8x6 TOPSIDE MARKING STMicroelectronics SO8 NARROW AI09777

VDFPN 8x6

Abstract: MARKING code mf stmicroelectronics process technology code. Figure 3. SO8 Narrow Body: Back-Side Marking AAAAAAA BBBBBBB AI09778 , : Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B AI09779 On the top-side (Figure 4.): The "B" , "T" field contains the process technology code. Figure 5. SO8 Wide Body: Back-Side Marking AAAAAAA , VFQFPN 8 6x5x1 PITCH 1.27 Figure 7. MLP 5x6: Top-Side Marking DDDDDDDD PP LLL WX COO YWWT B , ME EP VDFPN 8x6x1 PITCH 1.27 Figure 8. MLP 8x6: Top-Side Marking DDDDDDDD PP LLL WX COO
STMicroelectronics
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marking AAAA MARKING SO8 10TSSOP STMicroelectronics TRACEABILITY code MARKING code mf stmicroelectronics so16 VDFPN
Abstract: μs Waveform) PPP 400 W Peak Pulse Current (8x20 μs Waveform) I PP 17 A VESD , . 1 PJGL05 SERIES ELECTRICAL CHARACTERISTICS (TJ=25oC) PJGL05 Marking GL5 Parameter Reverse , Leakage Current IR Clamping Voltage (8/20μs) VCL I PP=1Amps - - 9.5 V Clamping Voltage (8/20μs) VCL I PP=5Amps - - 11 V Off State Junction Capacitance CJ , - 12 V PJGL12 Marking G12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage PanJit International
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IEC61000-4-2 IEC61000-4-5

marking PP code

Abstract: PP VESD TL TJ T S TG Value 400 17 >25 260 -55 to +125 -55 to +150 Units W A kV O C C C O O , =25oC) PJGL05 Marking GL5 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance PJGL12 Marking G12 , /20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance PJGL15 Marking G15 Parameter Reverse , Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR VCL VCL CJ I BR=1mA VR=15V I PP=1Amps I
PanJit International
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Abstract: Power (8/20µs Waveform) P pp 400 W ESD Voltage (HBM) V ESD 25 kV Operating , Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD05 Marking , ) Vc I pp = 5A 7.5 V Clamping Voltage (820µs) Vc I pp = 24A 16 V Off State , www.panjit.com PJSD05 Series ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD12 Marking T4S Parameter , Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc I pp = 5A Clamping PanJit International
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Abstract: µs Waveform) PPP 400 W Peak Pulse Current (8x20 µs Waveform) I PP 17 A VESD , PJGL05 SERIES ELECTRICAL CHARACTERISTICS (TJ=25oC) PJGL05 Marking GL5 Parameter Reverse Stand-Off , Current IR Clamping Voltage (8/20µs) VCL I PP=1Amps - - 9.5 V Clamping Voltage (8/20µs) VCL I PP=5Amps - - 11 V Off State Junction Capacitance CJ 0Vdc , 12 V PJGL12 Marking G12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage PanJit International
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B39700-X6962-M100

Abstract: B686 Output Type Ordering code Marking X 6956 M B39600-X6956-M100 Type, date code, pin 1 , Output Type Ordering code Marking X 6961 M B39700-X6961-M100 Type, date code, pin 1 , ground Chip carrier ­ ground Output Output Type Ordering code Marking X 6962 M , Ground Type Ordering code Marking B 674 B39481-B674-B510 Type, date code , Type Ordering code Marking B 686 B39481-B686-B510 Type, date code Electrostatic
Siemens Matsushita Components
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B39700-X6962-M100 B686 X6956M 6962 1961-5X 6961

MMBZ15VA

Abstract: sot-23 body marking 24w specified 24 Watt (VF = 0.9V max @ IF = 10mA) MMBZ5V6AL Marking Code VC @ IPP (Note 2) K9A , ) VRWM VC @ IPP (Note 2) Breakdown Voltage IR @ VRWM Type Number Marking Code Volts , Marking Code MMBZ15VAL K9K/KDJ MMBZ18VAL Ordering Information VBR (Note 3) (V) @ IT , XXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = , Information, See Sheet 2 Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking
Diodes
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MMBZ33VAL MMBZ10VAL MMBZ15VA sot-23 body marking 24w marking code k9q MMBZ20VAL MMBZ27VAL DS30306 MMBZ33VA

T2S SOT-23

Abstract: 5A MARKING CODE SOT23 ELECTRICAL CHARACTERISTICS PJDLC03 Marking DL3 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage , 25OC I PP = 1A t p = 8/20 s I PP = 5A t p = 8/20 s Between pin1.2 to 3 V R=0V,f=1MHz Min. 4 Typ. Max , VBR IR VC VC CJ Conditions I T=1mA VRWM = 5V, T = 25OC I PP = 1A t p = 8/20 s I PP = 5A t p = 8/20 s , =1mA VRWM = 12V, T = 25OC I PP = 1A t p = 8/20 s I PP = 5A t p = 8/20 s Between pin1.2 to 3 VR=0V,f=1MHz Min , Leakage Current Clamping Voltage Symbol VRWM VBR IR VC VC CJ Conditions I T=1mA VRWM = 15V, T = 25OC I PP
PanJit International
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T2S SOT-23 5A MARKING CODE SOT23 PJDLC24 2010-REV
Abstract: Marking Code 12 13 · Case 14 : mFN-523 15 16 18 10 115 120 · Digital TV and Set-top Boxes 20 30 40 50 60 , Current Volts Maximum DC Blocking Voltage 20 40 50 60 80 100 150 200 VDC Marking Code RATINGS RWM , (0.8) Typ. Marking code VGFM5.0A-FN5 ACHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL RATINGS Marking Code Maximum RMS Voltage Pr eli m VRRM VRMS VDC IO IFSM 12 20 14 13 30 21 14 40 28 , code suffix "G" : Molded plastic, SOD-123H · Case , Halogen free product for packing code suffix "H" · Willas Electronic
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FM120-M FM1200-M FN-523 UL94-V0 FM140-MH

MYS 99

Abstract: STMicroelectronics marking code date assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHATTM products. STMicroelectronics is implementing a new marking and traceability scheme , marking illustrations Figure 1. QFN16 (3 x 3) package date code 1-digit Year (4 = 2004). 2 , Week (01 - 52). PP Y WW AI02442d Figure 4. SOT date and part number code 3-digit Part Number , ) marking information AN926 Previous (obsolete) marking information The 9-character date code (Figure
STMicroelectronics
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MYS 99 STMicroelectronics marking code date MYS 99 STMicroelectronics STMicroelectronics date code format Date Code Marking STMicroelectronics st marking code

PJSD05U30LTM

Abstract: Digital Visual Interfaces ounces · Marking code: Partnumber PJSD05ULTM PJSD05U10LTM PJSD05U30LTM Marking 2 n g APPLICATIONS · , A kV kV O PPP I PP VESD VESD TJ T J , T S TG C C O March 21,2013-REV.00 PAGE . 1 , =1mA, between I/O to GND VR=5V, between I/O to GND I pp=1A, between I/O to GND I pp=4A, between I/O to GND 0Vdc , =5V, between I/O to GND I pp=1A, between I/O to GND I pp=4A, between I/O to GND 0Vdc, f=1.0MHZ between I/O to , VBR IR VC VC CJ CONDITION I BR=1mA, between I/O to GND VR=5V, between I/O to GND I pp=1A, between I
PanJit International
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Digital Visual Interfaces PJSD05ULTM_R1_00001
Abstract: CHARACTERISTICS PJDLC03 Marking DL3 Parameter Symbol Conditions Min. Typ. Max. Units VRWM , I PP = 1A t p = 8/20 s - - 6.5 V Clamping Voltage VC I PP = 5A t p = 8/20 , Voltage VC I PP = 1A t p = 8/20 s - - 9.8 V Clamping Voltage VC I PP = 5A , Voltage VC I PP = 1A t p = 8/20 s - - 19 V Clamping Voltage VC I PP = 5A t , Voltage VC I PP = 1A t p = 8/20 s - - 24 V Clamping Voltage VC I PP = 5A t PanJit International
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