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Abstract: BA591WS BA591WS Band-switching diode PINNING Features · · Low diode capacitance: max. 1.05 pF. · Small inductance. DESCRIPTION Low diode forward resistance: max. 0.7. · PIN Very small plastic SMD package. 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL , company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/11/2004 BA591WS BA591WS , 10mA VF - - 1 V Reverse Current VR = 20V IR - - 20 nA Diode ... Original
datasheet

4 pages,
270.85 Kb

100MHZ diode Marking Code 65 diode SMD WL GP 015 DIODE marking CODE R SMD DIODE smd DIODE code marking Q smd diode marking code smd diode marking code 500 wl smd smd diode sod-323 marking code 500 marking code WL marking code diode wl BA591WS BA591WS abstract
datasheet frame
Abstract: BA591WS BA591WS Band-switching diode PINNING Features · · Low diode capacitance: max. 1.05 pF. · Small inductance. DESCRIPTION Low diode forward resistance: max. 0.7. · PIN Very small plastic SMD package. 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL , , acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/11/2004 BA591WS BA591WS , 10mA VF - - 1 V Reverse Current VR = 20V IR - - 20 nA Diode ... Original
datasheet

4 pages,
360.57 Kb

100MHZ marking CODE R SMD DIODE MARKING WL smd DIODE code marking Q smd diode marking code smd diode marking code 500 smd diode sod-323 marking code 500 smd code marking wl marking code WL marking code diode wl marking 724 diode smd marking codes list BA591WS BA591WS abstract
datasheet frame
Abstract: BA591WS BA591WS BAND SWITCHING DIODE PINNING Features · Very small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL" Simplified outline SOD-323 and symbol Absolute , IR - 20 nA Diode Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz CD - 1.05 0.9 pF Diode Forward Resistance at IF = 3 mA, f = 100 MHz at IF = 10 mA, f = 100 MHz ... Original
datasheet

3 pages,
204.66 Kb

wl smd diode smd diode sod-323 marking code 500 smd diode marking code Marking Codes smd marking code WL 024 smd diode marking code smd diode code A GP 724 DIODE MARKING WL BA591WS BA591WS abstract
datasheet frame
Abstract: BA591WS BA591WS BAND SWITCHING DIODE PINNING Features · Very small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL" Simplified outline SOD-323 and symbol Absolute , IR - 20 nA Diode Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz CD - 1.05 0.9 pF Diode Forward Resistance at IF = 3 mA, f = 100 MHz at IF = 10 mA, f = 100 MHz ... Original
datasheet

3 pages,
204.68 Kb

smd diode marking code MARKING WL GP 724 DIODE marking code WL BA591WS BA591WS abstract
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Abstract: , Method 208 • Polarity: Cathode Band • Marking: Date Code and Marking Code (See Table on Page 2) • , Electrical Characteristics @ ta = 25°c unless otherwise specified Type Number Marking Code Zener Voltage , BZT52C2V7 BZT52C2V7 - BZT52C51 BZT52C51 SURFACE MOUNT ZENER DIODE Features_ • Planar Die Construction • 41 OmW , BZT52C13 BZT52C13 Wl 13 12.35 13.65 25 110 100 10 21 +0.080 BZT52C15 BZT52C15 WJ 15 14.25 15.75 30 110 100 11 19 +0.080 BZT52C16 BZT52C16 WK 16 15.20 16.80 40 170 100 12 17 +0.090 BZT52C18 BZT52C18 WL 18 17.10 18.90 50 170 100 14 15 +0.090 ... OCR Scan
datasheet

2 pages,
64.86 Kb

wk marking code BZT52C2V7 BZT52C3 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C51 BZT52C5V1 marking code W1 marking W6 diode VISHAY WL ZENER BZT52-C3 diode marking w8 BZT52C2V7 abstract
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Abstract: : Solderable per MIL-STD-202 MIL-STD-202, Method 208 • Polarity: Cathode Band • Marking: Date Code and Marking Code (See , specified Type Number Marking Code Zener Voltage Range (Note 2) Maximum Zener Impedance Maximum Reverse , VISHAY /litémîi") i power semiconductor/ BZT52C2V4S BZT52C2V4S - BZT52C39S BZT52C39S SURFACE MOUNT ZENER DIODE , 600 0.1 9.0 17 +6 +9 BZT52C13S BZT52C13S Wl 13 12.4 14.1 25 600 0.1 10 15 +7 +9 BZT52C15S BZT52C15S WJ 15 13.8 15.6 32 600 0.1 11 13 +8 +9.5 BZT52C16S BZT52C16S WK 16 15.3 17.1 40 600 0.1 12 13 +8 +9.5 BZT52C18S BZT52C18S WL 18 16.8 19.1 ... OCR Scan
datasheet

2 pages,
127.98 Kb

BZT52C2V4S BZT52C2V7S BZT52C39S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S diode cathode marking code 7-7-7-7 general purpose zener diode 256 diode zener WL marking WM marking code zener diode wl Zener Diode LF marking BZT52C2V4S abstract
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Abstract: Vr = Vrrm 10 uA ,¿08 - 28MIN 28MIN 28MIN 28MIN - â- S/jv i Marking Ä7- 3 - K : « Color code ! Green , ERC12 ERC12(12A) : Outline Drawings GENERAL USE RECTIFIER DIODE Features • â- 0-SfTOW®*.* High surge current • 'JV£M31 Compact size, lightweight • Sfffitt High reliability â- ffliSs I Applications • Vffifidft General purpose rectifier applications â- Sfêfcfëtt I Maximum Ratings and Characteristics , Reverse Voltage Vrrm 600 800 V Â¥ iij m m wl Average Forward Current If(AV) Iffil^ Resistive Load (RL) Ta ... OCR Scan
datasheet

1 pages,
21.51 Kb

ERC12 DIODE A46 erc12 diode ERC12 abstract
datasheet frame
Abstract: Marking Information XX = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 Code J K L M N P R S Month Jan Feb , BZT52C2V4 BZT52C2V4 - BZT52C39 BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V4 BZT52C2V4 BZT52C2V7 BZT52C2V7 BZT52C3V0 BZT52C3V0 , J-STD-020A J-STD-020A Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 Polarity: Cathode Band Marking: See Below ... Original
datasheet

3 pages,
61.31 Kb

BZT52C9V1 BZT52C8V2 BZT52C51 diode zener WL BZT52C47 ZENER MARKING WL marking code w6 marking code wd 22 I MARKING CODE marking WM w1 marking SOD 123 BZT52C2V7 24 256 W6 DIODE marking W4 38 BZT52C2V4 BZT52C39 BZT52C2V4 abstract
datasheet frame
Abstract: , Method 208 • Polarity: Cathode Band • Marking: Date Code and Type Code or Date Code only. Type Code , specified Type Number Marking Code (Note 3) Zener Voltage Range (Note 2) Maximum Zener Impedance Maximum , BZT52C2V7 BZT52C2V7 - BZT52C51 BZT52C51 SURFACE MOUNT ZENER DIODE Features_ • Planar Die Construction • 41 OmW , width = 300ns. 3. When provided, otherwise, parts are provided with date code only, and type number , WH 12 11.4 12.7 20 90 0.1 9.0 28 +6 +9 BZT52C13 BZT52C13 Wl 13 12.4 14.1 25 110 0.1 10 25 +7 +9 BZT52C15 BZT52C15 WJ ... OCR Scan
datasheet

2 pages,
122.86 Kb

10 47 l w9 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C51 diode cathode marking code 7-7-7-7 zener code wl marking code zener diode wl marking WM zener code wn BZT52C2V7 abstract
datasheet frame
Abstract: : Solderable per MIL-STD-202 MIL-STD-202, Method 208 • Polarity: Cathode Band • Marking: Date Code and Marking Code (See , @ ta = 25°c unless otherwise specified Type Number Marking Code Zener Voltage Range (Note 2 , VISHAY LITEMS! POWER SEMICONDUCTOR Ì BZT52C2V7S BZT52C2V7S - BZT52C39S BZT52C39S SURFACE MOUNT ZENER DIODE Features • Planar Die Construction • Ultra-Small Surface Mount Package • General Purpose • Ideally , BZT52C16S BZT52C16S WK 16 15.20 16.80 40 170 100 12 17 +0.090 BZT52C18S BZT52C18S WL 18 17.10 18.90 50 170 100 14 15 +0.090 ... OCR Scan
datasheet

2 pages,
106.87 Kb

Zener diode sod323 marking code 27 BZT52C39S BZT52C3S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S diode marking w8 marking code w6 marking W6 diode VISHAY WL ZENER zener code wn BZT52C2V7S BZT52C39S BZT52C2V7S abstract
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Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.7.2 CSR: Code Segment Register -pass filters and clamp diodes are usually sufficient in preventing stress conditions. The risk of having implements a direct diode to V DD (P-diffusion of the drain connected to the pin and N-well connected to V DD ), while the N- channel of the output buffer implements a diode to V SS (P-substrate connected to VSS and N-diffu- sion of the drain connected to the pin). In parallel to these diodes
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993.htm
STMicroelectronics 09/02/2001 749.42 Kb HTM 6993.htm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.7.2 CSR: Code Segment Register -pass filters and clamp diodes are usually sufficient in preventing stress conditions. The risk of having implements a direct diode to V DD (P-diffusion of the drain connected to the pin and N-well connected to V DD ), while the N- channel of the output buffer implements a diode to V SS (P-substrate connected to VSS and N-diffu- sion of the drain connected to the pin). In parallel to these diodes
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v1.htm
STMicroelectronics 20/10/2000 733.23 Kb HTM 6993-v1.htm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.7.2 CSR: Code Segment Register damage to the microcontroller: low-pass filters and clamp diodes are usually sufficient in illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct diode ), while the N- channel of the output buffer implements a diode to V SS (P-substrate connected to VSS and N-diffu- sion of the drain connected to the pin). In parallel to these diodes, dedicated
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v2.htm
STMicroelectronics 26/01/2001 725.04 Kb HTM 6993-v2.htm
-85 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-86 4.3.6 The CPU switching support - 16 MByte total linear address space for code and data 16-Priority-Level Interrupt Flash and to additional SRAM unit for code and data. Data management unit with single cycle 16-bit Interface - Up to 12 MBytes external address space for code and data (overlaid by on-chip resources) - Bus (no code) 2 KByte additional high-speed data SRAM (no code) for variables and user stack 2 KByte
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc164cs.dip!/xc164cs/documents/xc164_umd_system_v1.1_2002_02.pdf
Infineon 09/02/2004 8731.91 Kb DIP xc164cs.dip
-87 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-88 4.3.6 The CPU address space for code and data 16-Priority-Level Interrupt System - 74 interrupt sources with separate management unit with flexible 64-bit interface to Program Flash and to additional SRAM unit for code and data bus Flexible Synchronous External Bus Interface - Up to 12 MBytes external address space for code and -chip Memory 2 KByte dual-port RAM for variables, register banks, system stack (no code) 4 KByte additional
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc161cj_v24.dip!/xc161cj/documents/xc161_umd_system_v1.1_2002_02.pdf
Infineon 09/02/2004 9113.92 Kb DIP xc161cj_v24.dip
-85 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-86 4.3.6 The CPU switching support - 16 MByte total linear address space for code and data 16-Priority-Level Interrupt Flash and to additional SRAM unit for code and data. Data management unit with single cycle 16-bit Interface - Up to 12 MBytes external address space for code and data (overlaid by on-chip resources) - Bus (no code) 2 KByte additional high-speed data SRAM (no code) for variables and user stack 2 KByte
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc164cs_v25.dip!/xc164cs/documents/xc164_umd_system_v1.1_2002_02.pdf
Infineon 09/02/2004 8731.91 Kb DIP xc164cs_v25.dip
-87 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-88 4.3.6 The CPU address space for code and data 16-Priority-Level Interrupt System - 74 interrupt sources with separate management unit with flexible 64-bit interface to Program Flash and to additional SRAM unit for code and data bus Flexible Synchronous External Bus Interface - Up to 12 MBytes external address space for code and -chip Memory 2 KByte dual-port RAM for variables, register banks, system stack (no code) 4 KByte additional
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc161cj.dip!/xc161cj/documents/xc161_umd_system_v1.1_2002_02.pdf
Infineon 09/02/2004 9113.92 Kb DIP xc161cj.dip
-85 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-86 4.3.6 The CPU switching support - 16 MByte total linear address space for code and data 16-Priority-Level Interrupt Flash and to additional SRAM unit for code and data. Data management unit with single cycle 16-bit Interface - Up to 12 MBytes external address space for code and data (overlaid by on-chip resources) - Bus (no code) 2 KByte additional high-speed data SRAM (no code) for variables and user stack 2 KByte
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc164cs_v27.dip!/xc164cs/documents/xc164_umd_system_v1.1_2002_02.pdf
Infineon 25/11/2003 10263.06 Kb DIP xc164cs_v27.dip
-12 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-13 4.3.6 The CPU linear address space for code and data 16-Priority-Level Interrupt System - 77 interrupt sources with to additional SRAM unit for code and data. Data management unit with single cycle 16-bit data to 12 MBytes external address space for code and data (overlaid by on-chip resources) - Bus cycle stack (no code) 4 KByte additional high-speed data SRAM (no code) for variables and user stack 2 KByte
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc167ci_v24.dip!/xc167ci/documents/xc167ci_pum_system_v1.1_2002_12.pdf
Infineon 25/11/2003 10493 Kb DIP xc167ci_v24.dip
-12 4.3.5 Code Addressing via Code Segment and Instruction Pointer . . . . . . 4-13 4.3.6 The CPU linear address space for code and data 16-Priority-Level Interrupt System - 77 interrupt sources with to additional SRAM unit for code and data. Data management unit with single cycle 16-bit data to 12 MBytes external address space for code and data (overlaid by on-chip resources) - Bus cycle stack (no code) 4 KByte additional high-speed data SRAM (no code) for variables and user stack 2 KByte
www.datasheetarchive.com/files/infineon/mc_data/dave/products/xc167ci_v21.dip!/xc167ci/documents/xc167ci_pum_system_v1.1_2002_12.pdf
Infineon 09/02/2004 10517.79 Kb DIP xc167ci_v21.dip