NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SD0103WS SD0103WS SILICON SCHOTTKY BARRIER DIODE Features · Low forward voltage drop and suitable for high effifiency rectifying · Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 YF Top View Marking Code: "YF" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 30 V IO 100 mA IFSM 3 A ... | Original |
3 pages, |
rectifying a sine wave marking code 024 sod marking bp Diode yf marking YF marking code YF diode diode marking YF diode marking code YF SD0103WS SD0103WS abstract |
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| Abstract: SD0103WS SD0103WS SILICON SCHOTTKY BARRIER DIODE Features · Low forward voltage drop and suitable for high effifiency rectifying · Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 YF Top View Marking Code: "YF" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 30 V IO 100 mA IFSM 1 A ... | Original |
3 pages, |
marking code YF diode diode marking YF marking YF diode marking code YF SD0103WS SD0103WS abstract |
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| Abstract: the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Terminal Connection". MfcfaB. RATINGS •.fËtftfiiifcÈfê Absolute , Single Diode Schottky Barrier Diode DG1S6 mtmm outline 60 V 1A • S/MSSMD • 0.8mm • €Vf=0.58V , hÌS (yi ^ - > 32.6mm2) Measured on 1 x 1 inch substrate (pattern area : 32.6mnf ) *2 l'i yf-7'J > kS , ) Measured on 1 x 1 inch substrate (pattern area 32.6mm2) *l"i y-f 7"V > b*« (sì ? ~ > 160mm2) Measured on 1 ... | OCR Scan |
2 pages, |
J532 diode marking code YF K711 smd marking YF datasheet abstract |
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| Abstract: Single Diode Schottky Barrier Diode DG1S4 MUM OUTLINE 40 V 1A I • jg'JvSÃœSMD • iBüSä!=0.8miTi •fiVp-0.55V Feature • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VP-0.55V Main Use • , dimensions, refer to our web site or Semiconductor Short Form Catalog As for the marking, refer to the specification "Marking, Terminal Connection". IStë^ RATINGS »^XÃŽftA^fê Absolute Maximum Ratings («SM)4i»*# T , tead â- 3 max 20 H y-f-?'} v b J^ftt (/ ... | OCR Scan |
2 pages, |
diode smd marking jx SMD Marking jx datasheet abstract |
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| Abstract: Twin Diode Schottky Barrier Diode SG10SC9M SG10SC9M mtm® OUTLINE 90 V 10A • Tj=175°C • Prrsm I «SE • , Weight 1.54g (Typ) 4.5 For details of the outline dimensions, refer to our web site. As for the marking, refer to the specification "Marking, Terminal Connection". lËfà m RATINGS tôftÎili^AËfê Absolute , Rectified Forward Current Io 50HzIEK?S, iSiSHW, Tc = 139°C 50Hz sine wave, Resistance load, Per diode lo/2 , , Per diode MAX 0.75 TYP 0.65 V Mit Reverse Current Ir v _ qnv ^oi/xijg. ljs^a t) «st&fi v r wv, Pulse ... | OCR Scan |
2 pages, |
SG10SC9M marking JC diode SG10SC9 SG10SC9M abstract |
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| Abstract: Twin Diode Schottky Barrier Diode SG10SC9M SG10SC9M â- fl-tlH OUTLINE 90 V 10A • Tj=175°C • DC/DC nyjï-9 , web site. As for the marking, refer to the specification "Marking, Terminal Connection". Tc = 25°C , Tc=i39t 50Hz sine wave, Resistance load, Per diode lo/2, Tc = 139°C 10 A •^/vSiit-4-vffiitstc Peak Surge , specified) wmei Forward Voltage Vf t _ r a lMf-^ 1) «III il' Pulse measurement, Per diode MAX 0.75 TYP 0.65 V jt'ftsii Reverse Current Ir Vd - qnv il!IJ£' ') ... | OCR Scan |
2 pages, |
SG10SC9M SG10SC9M abstract |
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| Abstract: FERRANTI semiconductors High Speed Switching Diode FMMD6050 FMMD6050 DESCRIPTION This device is , ®-HI-I--f> 0-yF If * 10mA I 'f CONDITION 2 CONDITION 1 INPUT VOCTAGE WAVEfWM TEST CIRCUIT OUTPUT , Device Device Device Type marking Type marking BAL99 BAL99 E2 BZX84-C43 BZX84-C43 X6 BAR99 BAR99 E3 BZX84-C47 BZX84-C47 X7 , I 50 I 100 BAS 16 Single diode 75 100 6 0.855/1.0/ - FMMD914 FMMD914 Single diode 75 75 4/8 1.0 /-/- HD3A Single diode 75 100 6 1.0 /-/- BAL99 BAL99 Single diode 70 100 6 0.855/1.1/1.3 BAR99 BAR99 Single diode 70 100 6 ... | OCR Scan |
5 pages, |
Z6 DIODE BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47 ferranti FMMD6050 FMMD914 BAL99 FMMD6050 abstract |
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| Abstract: , refer to our web Site or the diode technical data book. As for the marking, refer to the specification "Marking, Terminal Connection". RATINGS Absolute Maximum Ratings T/ = 25°C) m s Item nd^t Symbol ~- n , Single Diode Schottky Barrier Diode DG1M3 â- stilli OUTLINE 30V 1A mmm • ÃŽS/MISMD • fi Vf=0.46 V • filR= 0.05mA Feature • Ultra-small SMD • Ultla-thin PKG=0.8mm • Low Vf=0.46V • Low lR=0.05mA m ÌÉ Main , ) Measured on 1 x 1 ¡neh substrate (pattern area : 160mnf) *3 U y-f- T l-f (>«?-> 2,100mm=) Measured on 2 x 2 ... | OCR Scan |
2 pages, |
DIODE smd marking smd marking code UAI datasheet abstract |
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| Abstract: Single Diode Schottky Barrier Diode DG1J10A DG1J10A Itttan OUTLINE 100V 1A I • S'JvfflSMD • filR= lOO^A • DC/DC â-¡ y>{-5> • mm, • mm Feature • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low ln= 1OOpA • Resistance for thermal run-away Main Use • Switching Regulator • DCVDC Converter • Home , Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". VMfà m RATINGS , 2 4 y-f Tft-i 2. lOOmm') Measured on 2 x 2 inch alumina substrate (pattern area : 2,100mm') 76 ... | OCR Scan |
2 pages, |
smd diode code TY DG1J10A DG1J10A abstract |
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| Abstract: 8A 65VTjw150V "cJ^nJJ!'' Fully Molded similar to TQ-220AB TQ-220AB FCHS08A065 FCHS08A065 ftttft Specification. mm Construction fflìÉ Application i/a y b y T y 4 yf- K Schottky Barrier Diode iffôfit&iîftffl High Frequency , current Ikm Tj=25°C Vkm=Vkrm 1 ^t^f' ° per diode - - 100 V A Peak forward voltage Vfm m- 0 j . » 1 Ml-btz. , 4.5+0.2 - 3.0±0.1 â- - £ o o o CD CD CD â- 2-7±0-2 0.6±0.2 . ifer? Marking (1) ^ N Manufacturers Mark ... | OCR Scan |
6 pages, |
TQ-220AB FCHS08A065 TQ-220AB abstract |
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