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278A10-2 Curtis Industries MARKING STRIPS visit Digikey Buy
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marking A2

Catalog Datasheet MFG & Type PDF Document Tags

marking A2

Abstract: DIODE marking A2 BAS16T/BAW56T/BAV70T/BAV99T BAS16T/BAW56T/BAV70T/BAV99T 1.60 1.00 SWITCHING DIODE 0.20 1.60 FEATURES 0.30 Power dissipation 150 PD: 0.50 mW (Tamb=25) 0.81 Forward Current IF: 75 m A Reverse Voltage 85 V VR: Operating and storage junction temperature range SOT-523 TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test
WEJ Electronic
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marking A2 DIODE marking A2 A2 marking diode marking JE

DIODE marking A2

Abstract: marking A2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified
Jiangsu Changjiang Electronics Technology
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Marking JD A2 marking JD marking cd diode JD

marking A2

Abstract: KDZ30V SEMICONDUCTOR KDZ30V MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking A2 0 1 2 1 No. Item Marking Description Device Mark A2 KDZ30V hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C , Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014. 2 nd
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Abstract: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25â"ƒ) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55â"ƒ to +150â"ƒ BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test Transys Electronics
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Abstract: band Cathode band R3 Part No. Marking XXX FSM104 Part No. Marking A3 FSM103 H1 Marking XXX FSM102 Part No. Marking A2 FSM101 F1 Marking XXX XXX , MELF MARKING TABLE: Part No. Marking SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007 Cathode band Cathode band Cathode band Cathode band Cathode band Cathode band Cathode band A1 Part No. Marking A4 XXX A5 XXX A6 XXX A7 XXX FSM105 Rectron Semiconductor
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FSM106 FSM107 HSM101 HSM102 HSM103 HSM104

marking A2

Abstract: SOT-523 SOT-523 Plastic-Encapsulate Diodes BAS16T SWITCHING DIODE SOT-523 FEATURES Power dissipation PD : 150 mWTamb=25 Forward Current IF : 75 mA Reverse Voltage VR: 85 V Operating and storage junction temperature range TJTstg: -55 to +150 Marking A2 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Reverse breakdown voltage Symbol V(BR) unless Test otherwise conditions IR= 100A specified MIN MAX 85 UNIT V IR1 A VR=25V 0.03 A 715 IF=10mA 855 IF
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SOT-523 SOT523 Plastic-Encapsulate Diodes
Abstract: SOT-323 Plastic-Encapsulate DIODE SOT-323 MMBD4148W /BAS16W SWITCHING DIODE FEATURES 1. 01 R EF 1. 25¡ Ã'0. 05 Power dissipation 2. 30¡ Ã'0. 05 mW (Tamb=25â"ƒ) 1. 30¡ Ã'0. 03 Collector current 150 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range 2. 00¡ Ã'0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55â"ƒ to +150â"ƒ Marking: A2, KA2, KT1 ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol unless otherwise Bytes
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marking jd

Abstract: marking je Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T Marking: JE unless otherwise specified) Test
Transys Electronics
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KA2 DIODE

Abstract: MMBD4148W Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Diode SOT-323 MMBD4148W /BAS16W SWITCHING DIODE FEATURES 1. 01 R EF 1. 25¡ À0. 05 Power dissipation 2. 30¡ À0. 05 mW (Tamb=25) 1. 30¡ À0. 03 Collector current 150 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55 to +150 Marking: A2, KA2, KT1 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol
Transys Electronics
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KA2 DIODE

KA2 DIODE

Abstract: marking A2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE SOT-323 MMBD4148W /BAS16W SWITCHING DIODE FEATURES 1. 01 R EF 1. 25¡ À0. 05 Power dissipation 2. 30¡ À0. 05 mW (Tamb=25) 1. 30¡ À0. 03 Collector current 150 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55 to +150 Marking: A2, KA2, KT1 ELECTRICAL CHARACTERISTICS (Tamb
Jiangsu Changjiang Electronics Technology
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a2 DIODE KA2 TO A0 DIODE marking ka2

KA2 DIODE

Abstract: 200mW Surface Mount Zener Diode Data Sheet SOT-323 MBD4148W /BAS16W SWITCHING DIODE FEATURES EF 1. 01 R 1. 25¡ À0. 05 Power dissipation 2. 30¡ À0. 05 mW (Tamb=25) 1. 30¡ À0. 03 Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range 2. 00¡ À0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55 to +150 Marking: A2, KA2, KT1 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage
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marking a2

Abstract: 1SS309 everse current V 1.20 A Marking Marking A2 www.kexin.com.cn 1 Kexin
Kexin
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1SS309

DIODE marking A2

Abstract: smd A2 Marking Type BAT18 BAT18-04 BAT18-05 BAT18-06 Marking A2 AU AS AT
Kexin
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smd A2 smd diode A2 smd diode 1301 marking AU smd transistor marking A2 bat18 a2 diode smd A2
Abstract: Marking Marking A2 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1 TY TY Semiconductor
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Abstract: VF Diode capacitance CD Reverse recovery tim e t rr A mV Marking Type BAS16T BAW56T BAV70T BAV99T Marking A2 JD JJ JE http://www.twtysemi.com TY Semiconductor
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Abstract: 0.4 0.7 Series inductance Ls 2 pF nH Marking Type BAT18 BAT18-04 BAT18-05 BAT18-06 Marking A2 AU AS AT http://www.twtysemi.com sales@twtysemi.com TY Semiconductor
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smd marking JD

Abstract: JJ SMD diode V R =75 V 1250 V R =0 V,f=1MHz 1.5 pF 4 ns t rr A mV Marking Type BAS16T BAW56T BAV70T BAV99T Marking A2 JD JJ JE www.kexin.com.cn 1
Kexin
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smd marking JD JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t
Abstract: . Marking Marking A2 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1 TY TY Semiconductor
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BA592

smd diode A2

Abstract: SMD DIODE MARKING 14 basis; inspection level S4, AQL 1.0. Marking Marking A2 www.kexin.com.cn 1 Kexin
Kexin
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SMD DIODE MARKING 14 smd diode JS A2 diode smd GP 005 DIODE smd diode S4 S4 DIODE

DIODE marking A2

Abstract: ka2 DIODE MCC TM Micro Commercial Components BAS16WT MMBD4148WT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features · · Power dissipation: 200mW (Tamb=25) Collector current:150mA 200mW Switching Diode Marking: A2, KA2, KT1 SOT-323 A D Maximum Ratings · · B Operating Temperature: -55 to +150 Storage Temperature: -55 to +150 F Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Peak Forward Current Maximum Instantaneous
Micro Commercial Components
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