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marking 43

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (2) IN Marking: 43 Marking: 43 2 3 (3) OUT DTC143XSA (TO-92S) (1) GND (2) OUT WEJ Electronic
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DTC143XUA DTC143XKA DTC143X 43 MARKING DTC143XUA/XKA/XSA DTC143XUA/DTC143XKA/DTC143XSA 100MH
Abstract: ) IN Marking: 43 (3) OUT Marking: 43 2 DTC143XSA 3 (TO-92S) (1) GND (2) OUT (3 Jiangsu Changjiang Electronics Technology
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Abstract: SEMICONDUCTOR KDZ4.3EV MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking 43 No. Marking Description Device Mark 2000. 8. 8 Item 43 KDZ4.3EV Revision No :0 1/1 - -
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Abstract: SEMICONDUCTOR KDZ4.3V MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 43 0 1 2 1 No. Item Marking Description Device Mark 43 KDZ4.3V hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C , Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014. 2 nd -
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Abstract: BAS40W SERIES SOT-323 SCHOTTKY DIODE FEATURES 1. 01 R EF 1. 25¡ À0. 05 Power dissipation mW (Tamb=25) 1. 30¡ À0. 03 Collector current 200 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 2. 30¡ À0. 05 0. 30 200 PD: Unit: mm TJ, Tstg: -55 to +150 BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 unless Transys Electronics
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transistor k44 Marking k45 k45 diode transistor k43 k44 transistor marking k43 diode
Abstract: BAS40LT1 SCHOTTKY DIODE Features Power dissipation P D : 200 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. 0.4 0.95 BAS40-04 Marking:44 - + - + 0.95 2.4 1.3 2.9 1.9 + BAS40 Marking:43 1.BASE 2.EMITTER 3.COLLECTOR + + BAS40-05 Marking:45 - Unit:mm - BAS40-06 Marking:46 Electro-Optical -
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DIODE SCHOTTKY 30V 200MA SOT23
Abstract: 2.00±0.05 200 0.30 PD: Unit: mm TJ, Tstg: -55â"ƒ to +150â"ƒ BAS40W Marking: 43 BAS40W-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol BAS40W-05 Marking: 45 unless Test otherwise conditions BAS40W-06 Marking: 46 specified) MIN MAX V(BR) R Jiangsu Changjiang Electronics Technology
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Abstract: BAS40LT1 SCHOTTKY DIODE Features Power dissipation P D : 200 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. + BAS40 Marking:43 - + 0.4 0.95 0.95 2.9 1.9 2.4 1.3 BAS40-04 Marking:44 - + Unit:mm + + BAS40-05 Marking:45 - - BAS40-06 Marking:46 Electro-Optical Characteristics Parameter (Ta=25 C WEJ Electronic
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Diode SOT-23 marking J marking t marking 46 MA MARKING SOT23 MV MARKING SOT23
Abstract: BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40-05 Marking:45 BAS40-06 Marking:46 unless otherwise specified) Test conditions MIN Jiangsu Changjiang Electronics Technology
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marking pd diode marking 44 sot23 marking cd SOT23 MARKING 46
Abstract: BAS40 SERIES SOT-23 SCHOTTKY DIODE 1. 0 FEATURES Power dissipation 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 40 V VR: Operating and storage junction temperature range 0. 95 mW (Tamb=25) 1. 9 200 PD: 2. 4 1. 3 Unit: mm TJ, Tstg: -55 to +150 BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40-05 Marking:45 BAS40-06 Marking:46 unless otherwise specified) Test conditions Transys Electronics
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES Low forward voltage Fast switching BAS40 MARKING:43 · BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25â"ƒ Parameter Symbol Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage Limits Unit 40 V VR Forward Continuous Current Jiangsu Changjiang Electronics Technology
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Abstract: BAS40W/-04/-05/-06 Schottky Diode SOT-323 Features Low Forward Voltage Fast Switching Dimensions in inches and (millimeters) BAS40W MARKING: 43· BAS40W-06 MARKING: 46 BAS40W-05 MARKING45 BAS40W-04 MARKING44 Maximum Ratings @TA=25 Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage Forward continuous Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range Symbol VRRM VRWM VR IFM PD -
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Abstract: junction temperature range T J T stg: -55 to +150 BAS40W Marking:43.K43 ± ± ± ± BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , SOT-323 Plastic-Encapsulate DIODE SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD , Reveres recovery time trr 5 nS Reverse breakdown voltage conditions BAS40W-06 Marking:46 -
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marking e1 diode DIODE marking A2 marking K45 sot323 A1 marking diode diode k44 diode k45 525REF 026TYP 650TYP 021REF
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOTâ'"23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICSï¼Tamb=25â"ƒ Parameter Reverse breakdown voltage Reverse voltage V(BR , ¼™ï¼• ï¼'ï¼ï¼™ ï¼'ï¼ï¼™ ï¼'ï¼ï¼" ï¼'ï¼ï¼" Unit : mm BAS40-05 Marking:45 BAS40-06 unless otherwise specified) Test conditions IR= 100μA MIN Marking:46 Jiangsu Changjiang Electronics Technology
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037TPY 950TPY 550REF 022REF
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE FEATURES Low forward voltage Fast switching BAS40T MARKING:43 BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46 Maximum Ratings @Ta=25â"ƒ Parameter Symbol Limit VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS40T/-04T/-05T/-06T SCHOTTKY DIODE SOT-523 FEATURES Low forward voltage Fast switching BAS40T MARKING:43 BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Limits Unit VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Jiangsu Changjiang Electronics Technology
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Abstract: junction temperature range T J T stg: -55 to +150 BAS40W Marking:43.K43 ± ± ± ± BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , BAS40W-04/05/06 SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD : 200 , BAS40W-06 Marking:46.K46 MIN MAX 40 f=1MHz IF=10mA through I =10mA R to IR=1mA Http WEJ Electronic
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K46 Package k46 transistor
Abstract: 2. 00¡ À0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55 to +150 BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 unless otherwise specified) Test conditions MIN MAX Jiangsu Changjiang Electronics Technology
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diode marking 45 diode MARKING A0 Diode Marking ef marking a0
Abstract: , RL = 100 5.0 ns Marking NO. KAS40T KAS40-04T KAS40-05T KAS40-06T Marking 43 44 45 46 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1 TY Semiconductor
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES Low Forward Voltage Fast Switching BAS40 MARKING: 43· BAS40-06 MARKING: 46 BAS40-05 MARKING45 BAS40-04 MARKING44 Maximum Ratings @TA=25 Parameter Symbol Peak repetitive peak reverse voltage 40 VRWM Unit V VRRM Working peak reverse voltage Limits DC Blocking Voltage VR Forward continuous Current IFM 200 Jiangsu Changjiang Electronics Technology
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