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Part Manufacturer Description Datasheet BUY
0522660043 Weidmüller Interface GmbH & Co. KG DEKAFIX GW 5 MARKED 43 50/CD visit Digikey Buy
0526960043 Weidmüller Interface GmbH & Co. KG DEKAFIX GW 6 MARKED 43 50/CD visit Digikey Buy
278A10-2 Curtis Industries MARKING STRIPS visit Digikey Buy
278A10-23 Curtis Industries MARKING STRIPS visit Digikey Buy
278A10-21 Curtis Industries MARKING STRIPS visit Digikey Buy
247A10-3 Curtis Industries MARKING STRIPS visit Digikey Buy

marking 43

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marking 43

Abstract: DTC143XSA (2) IN Marking: 43 Marking: 43 2 3 (3) OUT DTC143XSA (TO-92S) (1) GND (2) OUT
WEJ Electronic
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DTC143XUA DTC143XKA DTC143X marking 43 43 MARKING DTC143XUA/XKA/XSA DTC143XUA/DTC143XKA/DTC143XSA 100MH
Abstract: ) IN Marking: 43 (3) OUT Marking: 43 2 DTC143XSA 3 (TO-92S) (1) GND (2) OUT (3 Jiangsu Changjiang Electronics Technology
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Abstract: SEMICONDUCTOR KDZ4.3EV MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking 43 No. Marking Description Device Mark 2000. 8. 8 Item 43 KDZ4.3EV Revision No :0 1/1 - -
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marking 43

Abstract: SEMICONDUCTOR KDZ4.3V MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 43 0 1 2 1 No. Item Marking Description Device Mark 43 KDZ4.3V hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C , Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014. 2 nd
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Marking k45

Abstract: transistor k44 BAS40W SERIES SOT-323 SCHOTTKY DIODE FEATURES 1. 01 R EF 1. 25¡ À0. 05 Power dissipation mW (Tamb=25) 1. 30¡ À0. 03 Collector current 200 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range 2. 00¡ À0. 05 2. 30¡ À0. 05 0. 30 200 PD: Unit: mm TJ, Tstg: -55 to +150 BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 unless
Transys Electronics
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Marking k45 transistor k44 k45 diode transistor k43 k44 transistor diode k44

DIODE SCHOTTKY 30V 200MA SOT23

Abstract: BAS40 BAS40LT1 SCHOTTKY DIODE Features Power dissipation P D : 200 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. 0.4 0.95 BAS40-04 Marking:44 - + - + 0.95 2.4 1.3 2.9 1.9 + BAS40 Marking:43 1.BASE 2.EMITTER 3.COLLECTOR + + BAS40-05 Marking:45 - Unit:mm - BAS40-06 Marking:46 Electro-Optical
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DIODE SCHOTTKY 30V 200MA SOT23
Abstract: 2.00±0.05 200 0.30 PD: Unit: mm TJ, Tstg: -55â"ƒ to +150â"ƒ BAS40W Marking: 43 BAS40W-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol BAS40W-05 Marking: 45 unless Test otherwise conditions BAS40W-06 Marking: 46 specified) MIN MAX V(BR) R Jiangsu Changjiang Electronics Technology
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marking 43

Abstract: Diode SOT-23 marking J BAS40LT1 SCHOTTKY DIODE Features Power dissipation P D : 200 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. + BAS40 Marking:43 - + 0.4 0.95 0.95 2.9 1.9 2.4 1.3 BAS40-04 Marking:44 - + Unit:mm + + BAS40-05 Marking:45 - - BAS40-06 Marking:46 Electro-Optical Characteristics Parameter (Ta=25 C
WEJ Electronic
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Diode SOT-23 marking J marking t MA MARKING SOT23 marking 46 MV MARKING SOT23

diode marking 44 sot23

Abstract: marking pd BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40-05 Marking:45 BAS40-06 Marking:46 unless otherwise specified) Test conditions MIN
Jiangsu Changjiang Electronics Technology
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diode marking 44 sot23 marking pd SOT23 MARKING 46 marking cd

BAS40

Abstract: BAS40-04 BAS40 SERIES SOT-23 SCHOTTKY DIODE 1. 0 FEATURES Power dissipation 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 40 V VR: Operating and storage junction temperature range 0. 95 mW (Tamb=25) 1. 9 200 PD: 2. 4 1. 3 Unit: mm TJ, Tstg: -55 to +150 BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40-05 Marking:45 BAS40-06 Marking:46 unless otherwise specified) Test conditions
Transys Electronics
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES Low forward voltage Fast switching BAS40 MARKING:43 · BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25â"ƒ Parameter Symbol Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage Limits Unit 40 V VR Forward Continuous Current Jiangsu Changjiang Electronics Technology
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Abstract: BAS40W/-04/-05/-06 Schottky Diode SOT-323 Features Low Forward Voltage Fast Switching Dimensions in inches and (millimeters) BAS40W MARKING: 43· BAS40W-06 MARKING: 46 BAS40W-05 MARKING45 BAS40W-04 MARKING44 Maximum Ratings @TA=25 Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage Forward continuous Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range Symbol VRRM VRWM VR IFM PD -
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k45 diode

Abstract: marking e1 diode junction temperature range T J T stg: -55 to +150 BAS40W Marking:43.K43 ± ± ± ± BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , SOT-323 Plastic-Encapsulate DIODE SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD , Reveres recovery time trr 5 nS Reverse breakdown voltage conditions BAS40W-06 Marking:46
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marking e1 diode DIODE marking A2 marking K45 sot323 A1 marking diode diode MARKING A1 diode k45 525REF 026TYP 650TYP 021REF
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOTâ'"23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICSï¼Tamb=25â"ƒ Parameter Reverse breakdown voltage Reverse voltage V(BR , ¼™ï¼• ï¼'ï¼ï¼™ ï¼'ï¼ï¼™ ï¼'ï¼ï¼" ï¼'ï¼ï¼" Unit : mm BAS40-05 Marking:45 BAS40-06 unless otherwise specified) Test conditions IR= 100μA MIN Marking:46 Jiangsu Changjiang Electronics Technology
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037TPY 950TPY 550REF 022REF
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE FEATURES Low forward voltage Fast switching BAS40T MARKING:43 BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46 Maximum Ratings @Ta=25â"ƒ Parameter Symbol Limit VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward Jiangsu Changjiang Electronics Technology
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marking 46

Abstract: BAS40T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS40T/-04T/-05T/-06T SCHOTTKY DIODE SOT-523 FEATURES Low forward voltage Fast switching BAS40T MARKING:43 BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Limits Unit VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Average Rectified Output Current IO 200 mA Non-Repetitive Peak Forward
Jiangsu Changjiang Electronics Technology
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transistor k43

Abstract: K46 Package junction temperature range T J T stg: -55 to +150 BAS40W Marking:43.K43 ± ± ± ± BAS40W SERIES Unit : mm BAS40W-05 Marking:45.K45 unless otherwise specified Symbol , BAS40W-04/05/06 SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Power dissipation PD : 200 , BAS40W-06 Marking:46.K46 MIN MAX 40 f=1MHz IF=10mA through I =10mA R to IR=1mA Http
WEJ Electronic
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K46 Package k46 transistor

k45 diode

Abstract: diode k44 2. 00¡ À0. 05 200 0. 30 PD: Unit: mm TJ, Tstg: -55 to +150 BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 unless otherwise specified) Test conditions MIN MAX
Jiangsu Changjiang Electronics Technology
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marking k43 diode diode marking 45 diode MARKING A0 marking a0 Diode Marking ef
Abstract: , RL = 100 5.0 ns Marking NO. KAS40T KAS40-04T KAS40-05T KAS40-06T Marking 43 44 45 46 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1 TY Semiconductor
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BAS40T

Abstract: smd diode marking Ja ,Irr = 0.1 X IR, RL = 100 5.0 ns Marking NO. KAS40T KAS40-04T KAS40-05T KAS40-06T Marking 43 44 45 46 www.kexin.com.cn 1 Kexin
Kexin
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smd diode marking Ja
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