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marking 1p transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2.25 2.55 0.089 0.100 Marking Code : 1P F 0.90 1.20 0.035 0.043 G Ordering Information 0.550 REF 0.022 REF Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT2222A MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A MMBT2222A RFG 3K / 7" Reel 1P Package Part , MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , electrodes are kept at ambient temperature Version : A10 MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor ... Taiwan Semiconductor
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3 pages,
152.42 Kb

1p transistor 1p transistor sot23 A10 SOT D2 marking 1p transistor sot23 marking transistor 1p 1 MMBT2222A transistor 1P Transistor MARKING 1P TRANSISTOR MARKING CODE 1P marking code 1p TRANSISTOR code marking 1P 3 TEXT
datasheet frame
Abstract: MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , (approximately) E 2.25 2.55 0.089 0.100 ­Marking Code : 1P F 0.90 1.20 0.035 0.043 0.550 REF G 0.022 REF Suggested PAD Layout Ordering Information Packing Marking 0.95 SOT-23 MMBT2222A MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A MMBT2222A RFG 3K / 7" Reel 1P Package Part No. 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical ... Taiwan Semiconductor
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3 pages,
135.84 Kb

MMBT2222A TEXT
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 TK2222ATTD03 C TRANSISTOR WBFBP-03A WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03 TK2907ATTD03) E C 1 , . Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P B E MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit ... Jiangsu Changjiang Electronics Technology
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2 pages,
358.77 Kb

WBFBP-03A TK2222ATTD03 TEXT
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 TK2222ATTD03 C TRANSISTOR WBFBP-03A WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03 TK2907ATTD03) E C 1 , . Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P B E MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value VCBO ... Jiangsu Changjiang Electronics Technology
Original
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3 pages,
178.94 Kb

TK2222ATTD03 marking transistor 1p 1 transistor 1P F marking 1p transistor 1p TRANSISTOR Transistor MARKING 1P TRANSISTOR 1P WBFBP-03A TEXT
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 TK2222ATTD03 C TRANSISTOR WBFBP-03A WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03 TK2907ATTD03) E C 1 , . Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value VCBO ... Jiangsu Changjiang Electronics Technology
Original
datasheet

3 pages,
156.09 Kb

WBFBP-03A TK2222ATTD03 TEXT
datasheet frame
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE MMBT2222AE C TRANSISTOR WBFBP-03A WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE MMBT2907AE) E C 1 , . Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value VCBO ... Jiangsu Changjiang Electronics Technology
Original
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3 pages,
160.16 Kb

WBFBP-03A MMBT2222AE TEXT
datasheet frame
Abstract: MARKING DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1 , LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G LMBT2222ATT1G S-LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in , LMBT2222ATT1G LMBT2222ATT1G S-LMBT2222ATT1G S-LMBT2222ATT1G 1P 1P 3000 / Tape & Reel LMBT2222ATT3G LMBT2222ATT3G S-LMBT2222ATT3G S-LMBT2222ATT3G 1P 1P , Range 1 1P M G = Specific Device Code = Date Code = Pb−Free Package ELECTRICAL ... Leshan Radio Company
Original
datasheet

3 pages,
111.4 Kb

LMBT2222ATT1G TEXT
datasheet frame
Abstract: . Minimum FR-4 or G -10 PCB Motorola TMOS Power MOSFET Transistor Device Data M T D F 1P 0 2H D , A I Motorola TMOS Power MOSFET Transistor Device Data 3 M T D F 1P 0 2H D TYPICAL , Transistor Device Data M T D F 1P 0 2H D POWER MOSFET SWITCHING Switching behavior is most easily , Transistor Device Data 5 M T D F 1P 0 2H D C O l-j O o < o cc S < cc O Qg , TOTAL , MOSFET Transistor Device Data M T D F 1P 0 2H D INFORMATION FOR USING THE Micro8 SURFACE MOUNT ... OCR Scan
datasheet

12 pages,
189.69 Kb

TEXT
datasheet frame
Abstract: TEMPERATURE P S 2 8 0 6 1.P S 2 8 0 6 -4 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Am , TRANSISTOR TYPE SOP PHOTOCOUPLER DESCRIPTION T h e PS2806-1 PS2806-1 and P S 2 806 -4 are o p tically cou ple d , oJ-*- k I D M y ) FT27I FT27I J I ° ' 5±0' 3 0 .4 Q !g :ig E 0 T 2 g | K MARKING , Forward C u rre n t1 Transistor Collector to Em itter Voltage Em itter to C ollector Voltage Collector , ±5 mA V = 0 V, f = 1.0 MHz V ce = 40 V, If = 0 mA Conditions MIN. P S 2 8 0 6 1.P S 2 8 0 6 -4 ... OCR Scan
datasheet

12 pages,
194.09 Kb

marking 1.P 2806-4-F 1P TRANSISTOR MARK NEC 2703 PS2806-1 PS2806-4 TEXT
datasheet frame
Abstract: VISHAY I 2N7002W 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir , Diagram Marking: 72 Weight: 0.006 grams (approx.) 1 1 1 i 1 1 1 K L M u ^ h *l , Note: 1. Pulse width < 300ns, duty cycle < 2%. Pd RejA Tj> T stg DS30099 DS30099 Rev. 1P 1 of 3 , < 300ns, duty cycle < 2%. V dd = 3 0 V , Id = 0.2A, RL = 150a VGe n = 10V, Rgen = 25£2 DS30099 DS30099 Rev. 1P , Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30099 DS30099 Rev. 1P ... OCR Scan
datasheet

3 pages,
99.13 Kb

transistor marking 1p 2N7002W TEXT
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220VAC 220VAC OCCURS RESPONSE 100MS 100MS FALLS DOWN TRANSISTOR DATA OFF STABILITIES LATCHES HOLD NONVOLATILE CAUSED DISPLAY LESS QUESTION DELAYED DOWN TRANSISTOR DATA OFF ACTUALLY INVERTED CAUSES OBTAINED HOLD GOOD ADAPTED WERE CAUSED LESS DOWN THEORETICALLY IMPEDANCES LOSSES CHANGES TRANSISTOR DATA BUDGET OFF ORDER TRANSISTOR MAINTAINED OFF ORDER 2.2K TAPPED CLOCKS THUS CAUSES IMPLEMENTATION PRODUCTION AFFECTING ALUMINUM DYNAMICS TRANSISTOR LEAKAGES ARRAY INVERTED LATCHES THUS HIGHLY 5.000V INVERTER PERMIT PROVIDING FORM ACT
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220VAC 220VAC OCCURS RESPONSE 100MS 100MS FALLS DOWN TRANSISTOR DATA OFF STABILITIES LATCHES HOLD NONVOLATILE CAUSED DISPLAY LESS QUESTION DELAYED DOWN TRANSISTOR DATA OFF ACTUALLY INVERTED CAUSES OBTAINED HOLD GOOD LOSSES CHANGES TRANSISTOR DATA BUDGET OFF ORDER DELIVERS REESTABLISHED INDUSTRIAL ACTUALLY DEMODULATOR TRANSISTOR MAINTAINED OFF ORDER 2.2K TAPPED CLOCKS THUS CAUSES IMPLEMENTATION PRODUCTION AFFECTING ALUMINUM UNGROUND WERE RATIOMETRICALLY LESS DOWN DYNAMICS TRANSISTOR LEAKAGES ARRAY INVERTED LATCHES THUS HIGHLY
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Linear 21/01/1999 5379.43 Kb EDB parts.edb
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