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marking 1p transistor

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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 TK2222ATTD03 C TRANSISTOR WBFBP-03A WBFBP-03A (1.6�6�5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03 TK2907ATTD03) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P ... Original
datasheet

3 pages,
178.94 Kb

marking transistor 1p 1 transistor 1P F marking 1p transistor 1p TRANSISTOR Transistor MARKING 1P TRANSISTOR 1P WBFBP-03A TK2222ATTD03 WBFBP-03A abstract
datasheet frame
Abstract: MMBT2222A MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A MMBT2907A) MARKING: 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Dimensions in inches and , nS CLASSIFICATION OF hFE(1) Rank Range L 100-200 H 200-300 MMBT2222A MMBT2222A SOT-23 Transistor(NPN) MMBT2222A MMBT2222A SOT-23 Transistor(NPN) ... Original
datasheet

3 pages,
995.07 Kb

TRANSISTOR 1P marking 1p sot23 1p transistor sot23 marking 1p transistor sot23 1p transistor TRANSISTOR 1P SOT23 MMBT2222A MMBT2222A abstract
datasheet frame
Abstract: 2.25 2.55 0.089 0.100 Marking Code : 1P F 0.90 1.20 0.035 0.043 G Ordering Information 0.550 REF 0.022 REF Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT2222A MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A MMBT2222A RFG 3K / 7" Reel 1P , MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , electrodes are kept at ambient temperature Version : A10 MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor ... Original
datasheet

3 pages,
152.42 Kb

Transistor MARKING 1P transistor 1P MMBT2222A marking transistor 1p 1 marking 1p transistor sot23 1p transistor sot23 1p transistor TRANSISTOR MARKING CODE 1P marking code 1p MMBT2222A abstract
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Abstract: MMBT2222AW MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant , Switching A L 3 3 C B Top View 1 1 K 2 E 2 D MARKING CODE F G H J MMBT2222AW MMBT2222AW = K3P, 1P REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 , Temperature 20-Oct-2009 Rev. C Page 1 of 4 MMBT2222AW MMBT2222AW NPN Silicon General Purpose Transistor , Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 ... Original
datasheet

4 pages,
1362.41 Kb

TRANSISTOR MARKING CODE 1P 1p npn switching transistor marking 1p transistor MMBT2222AW mmbt2907* transistor MMBT2907AW 1p k transistor TRANSISTOR code marking 1P 3 Transistor MARKING 1P 1P NPN SILICON GENERAL MMBT2222AW abstract
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Abstract: 300 MHz DEVICE MARKING: MMBT2222A MMBT2222A = 1P Copyright @vic Electronics Corp. Website http , @vic MMBT2222ALT1 MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 MMBT2222ALT1 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 2. 9 2. 4 1. 3 0. 95 0.3 1. 9 PCM: 3. COLLECTOR TJ, Tstg ... Original
datasheet

1 pages,
35.22 Kb

transistor SOT23 1p marking 1P sot-23 MMBT2222A 1P NPN MMBT2222ALT1 marking 1p sot23 MMBT2222ALT1 1P MMBT2222A-1P 1p transistor sot23 1p TRANSISTOR marking 1p transistor sot23 TRANSISTOR 1P TRANSISTOR 1P SOT23 MMBT2222ALT1 abstract
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Abstract: TRANSISTOR Features · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low , Connections: See Diagram Marking: K72 Weight: 0.006 grams (approx.) K H M J D F L 0.10 0.25 , : 2. Pulse width 300µs, duty cycle 2%. DS30120 DS30120 Rev. 1P 1 of 3 2N7002DW 2N7002DW NEW PRODUCT , 300µs, duty cycle 2%. DS30120 DS30120 Rev. 1P 2 of 3 2N7002DW 2N7002DW 1.0 NEW PRODUCT 0.8 ID , On-Resistance vs. Gate-Source Voltage DS30120 DS30120 Rev. 1P 3 of 3 2N7002DW 2N7002DW ... Original
datasheet

3 pages,
53.27 Kb

2N7002DW 2N7002DW abstract
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Abstract: VISHAY I 2N7002W 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir , Diagram Marking: 72 Weight: 0.006 grams (approx.) 1 1 1 i 1 1 1 K L M u ^ h *l , Note: 1. Pulse width < 300ns, duty cycle < 2%. Pd RejA Tj> T stg DS30099 DS30099 Rev. 1P 1 of 3 , < 300ns, duty cycle < 2%. V dd = 3 0 V , Id = 0.2A, RL = 150a VGe n = 10V, Rgen = 25£2 DS30099 DS30099 Rev. 1P , Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30099 DS30099 Rev. 1P ... OCR Scan
datasheet

3 pages,
99.13 Kb

2N7002W 2N7002W abstract
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE MMBT2222AE C TRANSISTOR WBFBP-03A WBFBP-03A (1.6�6�5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE MMBT2907AE) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P ... Original
datasheet

4 pages,
210.2 Kb

transistor 1p MMBT2907AE MMBT2222AE WBFBP-03A WBFBP-03A abstract
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Abstract: 4 FERRANTI semiconductors ® PNP Silicon Planar High Voltage Transistor BSS63 BSS63 DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability , TRANSISTORS Reverse Reverse Device Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV7? K7 K6 BFQ31 BFQ31 S2 S3 BCV72 BCV72 K8 K9 BFQ31A BFQ31A S4 S5 BCW29 BCW29 CI C4 BFS20 BFS20 G1 G4 BCW30 BCW30 C2 C5 , BCW72 BCW72 K2 K5 FMMT2222 FMMT2222 IB 2P BCW8Í) H3 H6 FMMT2222A FMMT2222A 1P 3P FMMT2369 FMMT2369 1J - FMMT2369A FMMT2369A P5 - BCX17 BCX17 T1 ... OCR Scan
datasheet

4 pages,
81.22 Kb

sot 23 transistor 2f sot-23 Marking M6 sot-23 l6 transistor marking T2 MARKING CODE DH SOT 23 C5 MARKING TRANSISTOR G1 marking sot23 A12 marking Diode marking m7 m6 marking transistor sot-23 transistor cg sot-23 pnp marking 3W BSS63 BSS63 abstract
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Abstract: HT3 PNP Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector , Reverse Reverse Device Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV7? K7 K6 BFQ31 BFQ31 S2 S3 BCV72 BCV72 K8 K9 BFQ31A BFQ31A S4 S5 BCW29 BCW29 CI C4 BFS20 BFS20 G1 G4 BCW30 BCW30 C2 C5 T3 T6 , FMMT2222 FMMT2222 IB 2P BCW8Í) H3 H6 FMMT2222A FMMT2222A 1P 3P FMMT2369 FMMT2369 1J - FMMT2369A FMMT2369A P5 - BCX17 BCX17 T1 T4 FMMT2484 FMMT2484 4G ... OCR Scan
datasheet

4 pages,
81.8 Kb

m6 marking transistor MARKING CF sot23 sot-23 T6 transistor marking T2 transistor dg sot-23 sot 23 marking code 3t marking of m7 diodes Marking H2 transistor marking code 7e marking code transistor list transistor G1 SOT-23 transistor cg sot-23 datasheet abstract
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open-drain option corresponds only to a disabling of P-channel MOS transistor of the buffer itself
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5464-v1.htm
STMicroelectronics 09/02/2001 421.62 Kb HTM 5464-v1.htm
the open-drain option corresponds only to a disabling of P-channel MOS transistor of the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5464-v4.htm
STMicroelectronics 26/01/2001 408.05 Kb HTM 5464-v4.htm
of P-channel MOS transistor of the buffer itself: it is still present and physically con-
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5521-v6.htm
STMicroelectronics 10/02/2000 489.4 Kb HTM 5521-v6.htm
MOS transistor of the buffer itself: it is still present and physically con- nected to the pin.
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5521-v3.htm
STMicroelectronics 20/10/2000 490.91 Kb HTM 5521-v3.htm
of P-channel MOS transistor of the buffer itself: it is still present and physically con-
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5521-v5.htm
STMicroelectronics 10/02/2000 489.4 Kb HTM 5521-v5.htm
MOS transistor of the buffer itself: it is still present and physically con- nected to the pin.
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5521-v1.htm
STMicroelectronics 09/02/2001 490.79 Kb HTM 5521-v1.htm
P-channel MOS transistor of the buffer itself: it is still present and physically con- nected to the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5521-v4.htm
STMicroelectronics 17/10/2000 474.79 Kb HTM 5521-v4.htm
kept at logic zero, the N-channel transistor is off, while the P-channel is on and can conduct. , the configuration after RE- SET enables an internal weak pull-up transistor in order to avoid conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to V DD disabled: it is important to highlight that physically the P-channel transistor is still present
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v2.htm
STMicroelectronics 26/01/2001 725.04 Kb HTM 6993-v2.htm
N-channel transistor is off, while the P-channel is on and can conduct. The opposite occurs when an transistor in order to avoid floating conditions. For other pins this is intrinsically forbidden, like for affect the behaviour of the pin when ex- posed to illegal conditions. In fact, the P-channel transistor physically the P-channel transistor is still present, so the diode to V DD works. In some
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993-v1.htm
STMicroelectronics 20/10/2000 733.23 Kb HTM 6993-v1.htm
Basic Inverter When an input is kept at logic zero, the N-channel transistor is off, while the most pins, the configuration after RE- SET enables an internal weak pull-up transistor in order to illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to disabled: it is important to highlight that physically the P-channel transistor is still present, so
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6993.htm
STMicroelectronics 09/02/2001 749.42 Kb HTM 6993.htm