NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 TK2222ATTD03 C TRANSISTOR WBFBP-03A WBFBP-03A (1.6�6�5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03 TK2907ATTD03) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P ... | Original |
3 pages, |
marking transistor 1p 1 marking 1p transistor 1p TRANSISTOR TRANSISTOR 1P Transistor MARKING 1P WBFBP-03A TK2222ATTD03 WBFBP-03A abstract |
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| Abstract: 2.25 2.55 0.089 0.100 Marking Code : 1P F 0.90 1.20 0.035 0.043 G Ordering Information 0.550 REF 0.022 REF Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT2222A MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A MMBT2222A RFG 3K / 7" Reel 1P , MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , electrodes are kept at ambient temperature Version : A10 MMBT2222A MMBT2222A 300mW, NPN Small Signal Transistor ... | Original |
3 pages, |
Transistor MARKING 1P transistor 1P MMBT2222A marking transistor 1p 1 1p transistor TRANSISTOR MARKING CODE 1P marking code 1p MMBT2222A abstract |
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| Abstract: MMBT2222AW MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant , Switching A L 3 3 C B Top View 1 1 K 2 E 2 D MARKING CODE F G H J MMBT2222AW MMBT2222AW = K3P, 1P REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 , Temperature 20-Oct-2009 Rev. C Page 1 of 4 MMBT2222AW MMBT2222AW NPN Silicon General Purpose Transistor , Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 ... | Original |
4 pages, |
TRANSISTOR MARKING CODE 1P 1p npn switching transistor marking 1p transistor MMBT2222AW mmbt2907* transistor MMBT2907AW TRANSISTOR code marking 1P 3 Transistor MARKING 1P 1P NPN SILICON GENERAL MMBT2222AW abstract |
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| Abstract: 300 MHz DEVICE MARKING: MMBT2222A MMBT2222A = 1P Copyright @vic Electronics Corp. Website http , @vic MMBT2222ALT1 MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 MMBT2222ALT1 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 2. 9 2. 4 1. 3 0. 95 0.3 1. 9 PCM: 3. COLLECTOR TJ, Tstg ... | Original |
1 pages, |
transistor SOT23 1p marking 1P sot-23 MMBT2222A 1P NPN MMBT2222ALT1 MMBT2222ALT1 1P MMBT2222A-1P 1p transistor sot23 1p TRANSISTOR marking 1p transistor sot23 TRANSISTOR 1P SOT23 TRANSISTOR 1P MMBT2222ALT1 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE MMBT2222AE C TRANSISTOR WBFBP-03A WBFBP-03A (1.6�6�5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE MMBT2907AE) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:1P C 1P ... | Original |
4 pages, |
MMBT2907AE MMBT2222AE WBFBP-03A WBFBP-03A abstract |
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| Abstract: 4 FERRANTI semiconductors ® PNP Silicon Planar High Voltage Transistor BSS63 BSS63 DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability , TRANSISTORS Reverse Reverse Device Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV7? K7 K6 BFQ31 BFQ31 S2 S3 BCV72 BCV72 K8 K9 BFQ31A BFQ31A S4 S5 BCW29 BCW29 CI C4 BFS20 BFS20 G1 G4 BCW30 BCW30 C2 C5 , BCW72 BCW72 K2 K5 FMMT2222 FMMT2222 IB 2P BCW8Í) H3 H6 FMMT2222A FMMT2222A 1P 3P FMMT2369 FMMT2369 1J - FMMT2369A FMMT2369A P5 - BCX17 BCX17 T1 ... | OCR Scan |
4 pages, |
transistor MARKING K4 TRANSISTOR a43 sot-23 T6 sot-23 l6 Diode marking m7 A12 marking MARKING CODE DH SOT 23 C5 MARKING TRANSISTOR G1 marking sot23 sot-23 MARKING CODE G1 m6 marking transistor sot-23 G1 TRANSISTOR SOT 23 PNP transistor cg sot-23 BSS63 BSS64 BSS63 abstract |
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| Abstract: HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is designed , Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV7? K7 K6 BFQ31 BFQ31 S2 S3 , FMMT2222A FMMT2222A 1P 3P FMMT2369 FMMT2369 1J - FMMT2369A FMMT2369A P5 - BCX17 BCX17 T1 T4 FMMT2484 FMMT2484 4G - BCX18 BCX18 T2 T5 FMMT2907 FMMT2907 2B - ... | OCR Scan |
4 pages, |
sot-23 marking LC sot-23 MARKING CODE G1 sot-23 body marking 1P NPN sot 23 marking code CD transistor EH sot-23 transistor marking code 7E SOT-23 transistor marking DG Marking H2 marking code transistor list Marking code H6 TRANSISTOR a43 A12 marking datasheet abstract |
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| Abstract: HT3 PNP Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector , Reverse Reverse Device Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV7? K7 K6 BFQ31 BFQ31 S2 S3 BCV72 BCV72 K8 K9 BFQ31A BFQ31A S4 S5 BCW29 BCW29 CI C4 BFS20 BFS20 G1 G4 BCW30 BCW30 C2 C5 T3 T6 , FMMT2222 FMMT2222 IB 2P BCW8Í) H3 H6 FMMT2222A FMMT2222A 1P 3P FMMT2369 FMMT2369 1J - FMMT2369A FMMT2369A P5 - BCX17 BCX17 T1 T4 FMMT2484 FMMT2484 4G ... | OCR Scan |
4 pages, |
BFQ31A BFQ31 BCW31 BCW30 BCW29 BCV72 ferranti MARKING CF sot23 marking code transistor list transistor marking code 7e Marking H2 marking of m7 diodes transistor dg sot-23 A12 marking datasheet abstract |
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| Abstract: Description MMBT2222A MMBT2222A Unit Marking Code 1P VCBO Collector-Base Voltage 75 V VCEO , SMD General Purpose Transistor (NPN) MMBT2222A MMBT2222A SMD General Purpose Transistor (NPN) Features · NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications · RoHS compliance , General Purpose Transistor (NPN) MMBT2222A MMBT2222A Electrical Characteristics (T Ambient=25ºC unless noted , Purpose Transistor (NPN) MMBT2222A MMBT2222A Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS ... | Original |
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TRANSISTOR 1P SOT23 SMD TRANSISTOR MARKING BR FR MARKING SMD TRANSISTOR smd 1p transistor TRANSISTOR SMD MARKING CODE 1P SMD CODE MARKING marking code 1p TRANSISTOR SMD fr MARKING CODE SMD IC smd transistor code 1p smd transistor marking 1p T smd code marking .1p MMBT2222A MMBT2222A abstract |
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| Abstract: MMBT2222AT MMBT2222AT MMBT2222AT MMBT2222AT TRANSISTOR (NPN) SOT-523 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR PCM: 0.15 W (Tamb=25) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 75 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 , tS VCC=30V, IC=150mA Fall time tf IB1= IB2= 15mA Marking 300 MHz 8 pF 10 nS 25 nS 225 nS 60 nS :1P WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail ... | Original |
2 pages, |
MMBT2222AT TRANSISTOR 1P MMBT2222AT abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| . Typenumber I C (A) V o V CE (V) P tot (MW) @ f1 P tot (MW) G UM @ f1 B) POLARITY @ I C (mA) VCEO max (V) @ f2 G UM (dB) @ f1 P tot (MW) I C _3 BFG135 BFG135 BFG135 BFG135 NPN 7GHz wideband transistor NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband NPN 100 12 10 850 NPN 500 150 500 7 Transistor www.datasheetarchive.com/files/philips/pip/bfg135_3-v1.html |
Philips | 14/02/2002 | 9.62 Kb | HTML | bfg135_3-v1.html |
| B) POLARITY G UM @ f1 (dB) VCEO max (V) @ f1 P tot (MW) I C (A) f T / I C BFG10 BFG10 BFG10 BFG10; BFG10/X BFG10/X BFG10/X BFG10/X NPN 2 GHz RF power transistor NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package ) BFG10 BFG10 BFG10 BFG10 7 1900 250 1900 NPN (23) 1900 7 4 Transistor (23) (23) 250 Transistor wideband NPN up to 10 GHz 7 4 8 NPN 8 www.datasheetarchive.com/files/philips/pip/bfg10x_4-v1.html |
Philips | 14/02/2002 | 10.02 Kb | HTML | bfg10x_4-v1.html |
| CURVE (SEE FIG.1) P tot (MW) @ f (MHz) I C (A) @ f1 G UM (dB) @ f (MHz BFG11 BFG11 BFG11 BFG11; BFG11/X BFG11/X BFG11/X BFG11/X NPN 2 GHz RF power transistor NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package Category BFG11 BFG11 BFG11 BFG11 Transistor wideband NPN up to 10 GHz NPN 5 4 NPN 8 Transistor wideband NPN up to 10 GHz BFG11/X BFG11/X BFG11/X BFG11/X 5 4 500 1900 Transistor wideband NPN up to www.datasheetarchive.com/files/philips/pip/bfg11x_3-v1.html |
Philips | 14/02/2002 | 10.07 Kb | HTML | bfg11x_3-v1.html |
| / I C CURVE (SEE FIG.1) @ f1 P tot (MW) G UM @ f1 (dB) POLARITY G UM @ f1 _2 BF747 BF747 BF747 BF747 NPN 1 GHz wideband transistor Low cost NPN transistor in a plastic SOT23 package. Stable oscillator operation ) I C (A) I C (A) BF747 BF747 BF747 BF747 Transistor wideband NPN up to 3.5 GHz 20 (2 20 Transistor wideband NPN up to 3.5 GHz 20 50 50 www.datasheetarchive.com/files/philips/pip/bf747_2-v1.html |
Philips | 14/02/2002 | 8.45 Kb | HTML | bf747_2-v1.html |
| transistor General info Low cost NPN transistor in a plastic SOT23 package. Features Feedback capacitance typ. 1 pF Stable oscillator operation High current gain Good thermal stability Page count File size BF547 BF547 BF547 BF547 NPN 1 GHz wideband transistor 01-sep-95 American Typenumber Order Code (12nc) Marking/Packing Specific Package Device Status BF547 BF547 BF547 BF547 BF547 BF547 BF547 BF547 T/R 9340 167 30215 Standard Marking * Reel Pack, SMD, Low Profile SOT www.datasheetarchive.com/files/philips/pip/bf547_2.html |
Philips | 23/04/2003 | 3.13 Kb | HTML | bf547_2.html |
| ) @ f1 @ f1 P tot (MW) @ f1 f T / I C CURVE (SEE FIG.1) f T / I C CURVE CURVE (SEE FIG.1) @ f1 P tot (MW) f T (GHz) I C (A) I C (A) f T (GHz _2 BFS17 BFS17 BFS17 BFS17 NPN 1 GHz wideband transistor NPN transistor in a plastic SOT23 package. A wide range of RF applications .5 NPN 4.5 4.5@f1 (3) 4.5@f1 500 15 500 Transistor wideband NPN www.datasheetarchive.com/files/philips/pip/bfs17_2-v1.html |
Philips | 14/02/2002 | 11.08 Kb | HTML | bfs17_2-v1.html |
| VCEO max (V) f T (GHz) I C (A) @ f1 P tot (MW) @ f1 f T (GHz _5 PBR941 PBR941 PBR941 PBR941 UHF wideband transistor Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for 360 10 2.0@f2?1.4@f1 (14A) Transistor wideband NPN up to 8 GHz 9.5 NPN ) Transistor wideband NPN up to 8 GHz 2000 10 8 50 1000 360 1000 8 www.datasheetarchive.com/files/philips/pip/pbr941_5-v1.html |
Philips | 14/02/2002 | 9.44 Kb | HTML | pbr941_5-v1.html |
| / I C CURVE (SEE FIG.1) VCEO max (V) @ f1 Frequency (MHz) @ f1 P tot (MW BFQ19 BFQ19 BFQ19 BFQ19 NPN 5 GHz wideband transistor NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits , radar systems, oscilloscopes, spectrum analyzers etc. The transistor features very low 11.5 (10) 3.3 Transistor wideband NPN up to 6 GHz 500 5.5 3.3@f1 www.datasheetarchive.com/files/philips/pip/bfq19_cnv_2-v1.html |
Philips | 14/02/2002 | 9.07 Kb | HTML | bfq19_cnv_2-v1.html |
| / I C CURVE (SEE FIG.1) P L (W) V CE (V) f T / I C CURVE (SEE FIG.1) @ f (MHz) f T / I C CURVE (SEE FIG.1) P tot (MW) @ I C (mA) P L (W) f T BFQ34 BFQ34 BFQ34 BFQ34 NPN 4 GHz wideband transistor NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated Transistor wideband NPN up to 6 GHz 1200 4 18 (11) 26 15 (11) 500 www.datasheetarchive.com/files/philips/pip/bfq34_cnv_2-v1.html |
Philips | 14/02/2002 | 9.78 Kb | HTML | bfq34_cnv_2-v1.html |
| _2 BF547 BF547 BF547 BF547 NPN 1 GHz wideband transistor Low cost NPN transistor in a plastic SOT23 package. Feedback capacitance typ. 1 pF Stable oscillator operation High current gain Good thermal stability @ f1 (dB) Socket f T / I C CURVE (SEE FIG.1) Socket Socket @ f1 @ f1 P tot (MW) P tot (MW) Category Category @ f (MHz) @ f1 @ f (MHz www.datasheetarchive.com/files/philips/pip/bf547_2-v1.html |
Philips | 14/02/2002 | 11.73 Kb | HTML | bf547_2-v1.html |