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marking+1p+transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , 2.25 2.55 0.089 0.100 Marking Code : 1P F 0.90 1.20 0.035 0.043 G , -23 MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A RFG 3K / 7" Reel 1P Package Part , electrodes are kept at ambient temperature Version : A10 MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Max Units IC= 10A IE= 0 Symbol V(BR Taiwan Semiconductor
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TRANSISTOR code marking 1P 3 marking code 1p TRANSISTOR MARKING CODE 1P Transistor MARKING 1P transistor 1P marking transistor 1p 1 MIL-STD-202
Abstract: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 , (approximately) E 2.25 2.55 0.089 0.100 ­Marking Code : 1P F 0.90 1.20 0.035 , 0.95 SOT-23 MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A RFG 3K / 7" Reel 1P Package Part No. 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical , Small Signal Transistor Small Signal Transistor Electrical Characteristics Max Units IC= 10 A Taiwan Semiconductor
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e , :1P C 1P B E MAXIMUM RATINGS (Ta=25 â"ƒ unless otherwise noted) Symbol Parameter Value Unit Jiangsu Changjiang Electronics Technology
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100MH
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e , :1P C 1P B E MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value VCBO Jiangsu Changjiang Electronics Technology
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1p TRANSISTOR marking 1p transistor transistor 1P F
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e , :1P C 1P B E MAXIMUM RATINGS TA=25â"ƒ unless otherwise noted Symbol Parameter Value VCBO Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e , :1P C 1P B E MAXIMUM RATINGS TA=25â"ƒ unless otherwise noted Symbol Parameter Value VCBO Jiangsu Changjiang Electronics Technology
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Abstract: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in , LMBT2222ATT1G S-LMBT2222ATT1G 1P 1P 3000 / Tape & Reel LMBT2222ATT3G S-LMBT2222ATT3G 1P 1P , MARKING DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1 , Range 1 1P M G = Specific Device Code = Date Code = Pbâ'Free Package ELECTRICAL Leshan Radio Company
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SC-89 AEC-Q101 463C-01 463C-02
Abstract: . Minimum FR-4 or G -10 PCB Motorola TMOS Power MOSFET Transistor Device Data M T D F 1P 0 2H D , A I Motorola TMOS Power MOSFET Transistor Device Data 3 M T D F 1P 0 2H D TYPICAL , Transistor Device Data M T D F 1P 0 2H D POWER MOSFET SWITCHING Switching behavior is most easily , Transistor Device Data 5 M T D F 1P 0 2H D C O l-j O o < o cc S < cc O Qg , TOTAL , MOSFET Transistor Device Data M T D F 1P 0 2H D INFORMATION FOR USING THE Micro8 SURFACE MOUNT -
OCR Scan
TDF1P02HD/D
Abstract: TEMPERATURE P S 2 8 0 6 1.P S 2 8 0 6 -4 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Am , TRANSISTOR TYPE SOP PHOTOCOUPLER DESCRIPTION T h e PS2806-1 and P S 2 806 -4 are o p tically cou ple d , Forward C u rre n t1 Transistor Collector to Em itter Voltage Em itter to C ollector Voltage Collector , ±5 mA V = 0 V, f = 1.0 MHz V ce = 40 V, If = 0 mA Conditions MIN. P S 2 8 0 6 1.P S 2 8 0 6 -4 , RESPONSE P S 2 8 0 6 1.P S 2 8 0 6 -4 10 Frequency f (kHz) 102 10s 104 105 106 Tim -
OCR Scan
2806-4-F NEC 2703 1P TRANSISTOR MARK marking 1.P PS2806-4 P10150EJ4V0D
Abstract: VISHAY I 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir) powefsehconwjctor/ Features Low On-Res¡stance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast , Note: 1. Pulse width < 300ns, duty cycle < 2%. Pd RejA Tj> T stg DS30099 Rev. 1P 1 of 3 , < 300ns, duty cycle < 2%. V dd = 3 0 V , Id = 0.2A, RL = 150a VGe n = 10V, Rgen = 25£2 DS30099 Rev. 1P , Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30099 Rev. 1P -
OCR Scan
Abstract: NEW PRODUCT 2N7002DW POWER SEMICONDUCTOR DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low , . Pulse width 300us, duty cycle 2%. DS30120 Rev. 1P 1 of 3 2N7002DW NEW PRODUCT , 300us, duty cycle 2%. DS30120 Rev. 1P 2 of 3 2N7002DW 1.0 NEW PRODUCT 0.8 ID , On-Resistance vs. Gate-Source Voltage DS30120 Rev. 1P 3 of 3 2N7002DW Lite-On Technology Lite-On Technology
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transistor k72
Abstract: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 â , —‡ Weight : 0.008 grams (approximately) ◇ Marking Code : 1P Maximum Ratings and Electrical , SOT-23 3K / 7" Reel RF RFG 1P (Note) MMBT2222A SOT-23 3K / 7" Reel RF RFG 1P Note : Manufacture special control, if empty means no special control requirement Taiwan Semiconductor
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Abstract: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package , COLLECTOR 3 Shipping Maring LMBT2222ATT1G 1P 3000 / Tape & Reel LMBT2222ATT3G 1P , DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = , 1 1P M G = Specific Device Code = Date Code = Pb-Free Package ELECTRICAL CHARACTERISTICS Leshan Radio Company
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1P surface mount transistor
Abstract: MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Dimensions in inches , CLASSIFICATION OF hFE(1) Rank Range L 100-200 H 200-300 MMBT2222A SOT-23 Transistor(NPN) MMBT2222A SOT-23 Transistor(NPN) - -
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marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 sot-23 1P F marking 1p transistor sot23 Marking 1P
Abstract: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES Epitaxial planar die construction Complementary PNP Type available(FMMBT2907A) MARKING: 1P MAXIMUM RATINGS* TA=25â"ƒ unless otherwise noted , Transistor CLASSIFICATION OF hFE(1) Rank L H Range 100-200 200-300 F FMBT2222A NPN Bipolar Transistor FCI FCI
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Abstract: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907AT) Ultra-Small Surface Mount Package SOT-523 Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 , ): 1P Ordering & Date Code Information, See Page 2 Weight: 0.002 grams (approx.) E G ¾ ¾ , ://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1P = Product Type Marking Code YM = Date Code Diodes
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J-STD-020A marking 1p npn MMBT2222AT-7 DS30268
Abstract: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907A) Ultra-Small Surface Mount Package C2 SOT-363 A B1 E1 Dim A B C B C C1 Min 0.10 1.15 2.00 0.30 1.80 0.90 , at ambient temperature. 2. Pulse test: Pulse width 300us, duty cycle 2%. DS30125 Rev. 1P 1 of , , duty cycle 2%. DS30125 Rev. 1P 2 of 2 MMDT2222A Lite-On Technology Lite-On Technology
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DUAL NPN K1P marking 1P sot363
Abstract: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant , H J MMBT2222AW = K3P, 1P REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 , Temperature 20-Oct-2009 Rev. C Page 1 of 4 MMBT2222AW NPN Silicon General Purpose Transistor , Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor SeCoS
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MMBT2907AW SILICON GENERAL 1P NPN 1p transistor sot323 1p k transistor mmbt2907* transistor
Abstract: VISHAY /UTEMir) I p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package MMDT3904 DUAL NPN S M A LL SIGNAL S U R F A C E MOUNT TRANSISTOR SOT-363 Dim Min Max Fl R KXX A 0.10 1.15 , : Pulse width < 300|ns> duty cycle < 2%. DS30088 Rev. 1P 1 of 2 MMDT3904 Electrical , Rev. 1P 2 of 2 ÖÖ 3 3 >> MMDT3904 >> i i i i b b o b b -
OCR Scan
Maxim sot-363
Abstract: VISHAY 2N7002W LITEMS! POWER SEMICONDUCTOR Ì N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package Mechanical Data_ Case: SOT , , duty cycle < 2%. DS30099 Rev. 1P 1 of 3 This Material Copyrighted By Its Respective Manufacturer , SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage DS30099 Rev. 1P 3 of 3 This Material -
OCR Scan
transistor marking 1p Z
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