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Part Manufacturer Description Datasheet BUY
ISL28113SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifier; Package: Eval Board visit Intersil
ISL28114SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifiers; Package: Eval Board visit Intersil
LMH6704MF Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, PDSO6, SOT23, 6-PIN visit Texas Instruments
LM8365BALMFX27 Texas Instruments 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, SOT23-5 visit Texas Instruments

marking JB sot23

Catalog Datasheet MFG & Type PDF Document Tags

Marking H11 sot

Abstract: mps 1049 MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking: 3EM Device Marking: Features http://onsemi.com · Pb-Free Package May be Available. The G-Suffix , 556 mW mW/°C °C/W Max Unit 1 2 CASE 318 SOT-23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10LT1G MMBTH10-4LT1 Package SOT-23 SOT-23 (Pb-Free) SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel , ADMITTANCE (mmhos) 70 60 -b ib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000
ON Semiconductor
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Marking H11 sot mps 1049 JB marking transistor marking JB sot23 JB MARKING SOT-23 3000/T BRD8011/D
Abstract: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking: 3EM Device Marking: http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage , °C/W Max Unit 2 EMITTER 3 1 2 CASE 318 SOT­23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10­4LT1 Package SOT­23 SOT­23 Shipping 3000/Tape & Reel 3000/Tape & Reel (1) FR­5 = 1.0 x , ADMITTANCE 80 y ib , INPUT ADMITTANCE (mmhos) 70 60 -bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 ON Semiconductor
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MMBTH10LT1/D

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 · Pb-Free Package May be , RJA 417 °C/W TJ, Tstg -55 to +150 °C RJA CASE 318 SOT-23 STYLE 6 PD ORDERING INFORMATION Device MMBTH10LT1 Package Shipping 3000/Tape & Reel SOT-23 (Pb-Free , . 99.5% alumina SOT-23 MMBTH10LT1G SOT-23 3000/Tape & Reel For information on tape and
ON Semiconductor
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transistor marking 3em TRANSISTOR AH 2

LMBTH10LT1G

Abstract: marking JB diode compliance with RoHS requirements. Ordering Information LMBTH10LT1G Device Marking Shipping , Collector­Base Voltage V CBO 30 Emitter­Base Voltage V EBO 3.0 SOT­23 3 COLLECTOR , MARKING LMBTH10LT1G = 3EM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , g ib ­10 60 ­20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE(mmhos) 70 ­b ib 40 30 , 50 600 100 40 700 ­g fb 30 jb fb(mmhos) y ib , FORWARD TRANSFER ADMITTANCE
Leshan Radio Company
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marking JB diode LMBTH10LT3G 10000/T 1000MH

Diode SOT-23 marking JB

Abstract: marking JB diode : 0.008 grams (approx.) Mounting Position: Any Marking: JB Lead Free: For RoHS / Lead Free Version, Add "-LF" Suffix to Part Number, See Page 4 J G SOT-23 Min 0.37 1.19 2.10 0.89 0.45 1.78 , MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) JB JB 0.079 (2.0) 0.035 (0.90 , M E D H Dim A B C D E G H J K L M Mechanical Data Case: SOT-23, Molded , INFORMATION Product No. BAV99-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel
Won-Top Electronics
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BAV99 BAV99-T1-LF Diode SOT-23 marking JB MARKING JB SOT-23 MARKING JB BAV99 SOT 23 DATA SHEET MIL-STD-202

marking H6 sot 23

Abstract: marking H6 SEMICONDUCTOR BAW56 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H6 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H6 , ) * Lot No. marking method Lot No. Description 01, 02 .51, 52 0A, 0B .5A, 5B* J1, J2 .E1, E2* JA, JB .EA, EB* 2006.5.11 Revision No : 0 Remark 01 : 2002. 1st Week, 02 , : 2005. 1st Week, JB : 2005. 2nd Week EA : 2005. 51th Week, EB : 2005. 52th Week. 1/1 -
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marking H6 sot 23 marking H6 SOT23-5 marking H6 marking EA SOT23

marking JC

Abstract: sot23 marking JB SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC , ) * Lot No. marking method Lot No. Description 01, 02 .51, 52 0A, 0B .5A, 5B* J1, J2 .E1, E2* JA, JB .EA, EB* 2006. 5. 10 Revision No : 0 Remark 01 : 2002. 1st Week , . JA : 2005. 1st Week, JB : 2005. 2nd Week EA : 2005. 51th Week, EB : 2005. 52th Week. 1/1 -
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marking JC sot23 marking JB BAV23S marking SOT23 MARKING JC sot23 jb JB SOT23

sot23 marking JB

Abstract: marking 12 SEMICONDUCTOR PG12GCS23 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 12 1 0 A 2. Marking 2 No. Item Marking Description Device Mark , ) * Lot No. marking method Note) * Lot No. marking method Year Periode (Year) Remark 01 : 2006 , : .2009, 2013, 2017. E1 : 2008. 51th Week, E2 : 2008. 52th Week. JA : 2009. 1st Week, JB : 2009. 2nd Week JA, JB .EA, EB* EA : 2009. 51th Week, EB : 2009. 52th Week. 2008. 4. 22 Revision
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marking 12 marking EA 22 SOT23 marking 5b sot23 marking 5B

H8 SOT-23 bav99

Abstract: BAV99 H8 SEMICONDUCTOR BAV99 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H8 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H8 , ) * Lot No. marking method Lot No. Description 01, 02 .51, 52 0A, 0B .5A, 5B* J1, J2 .E1, E2* JA, JB .EA, EB* 2006. 5. 11 Revision No : 0 Remark 01 : 2002. 1st Week , . JA : 2005. 1st Week, JB : 2005. 2nd Week EA : 2005. 51th Week, EB : 2005. 52th Week. 1/1 -
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H8 SOT-23 bav99 BAV99 H8 marking H8 marking H8 SOT-23 SOT23 H8 H8 marking

JB marking transistor

Abstract: transistor marking 3em SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base , Storage, Temperature C/W C Device Marking MMBTH10=3EM ELECTRICAL CHARACTERISTICS , MMBTH10 0 70 gib 60 50 jb jb(mmhos) yib, INPUT ADMITTANCE(mmhos) 80 ib 40 30 , 400 200 50 50 600 100 40 jb fb(mmhos) yib, FORWARD TRANSFER ADMITTANCE(mmhos , Form FIG.4 Polar Form 0 5.0 100 4.0 200 jb rb(mmhos) yrb, REVERSE TRANSFER ADMITTANCE
Weitron
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transistor marking JB J JB transistor C40 SOT23 marking 3EM sot-23

JB marking transistor

Abstract: marking JB diode compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping , Collector­Base Voltage V CBO 30 Emitter­Base Voltage V EBO 3.0 SOT­23 3 COLLECTOR , MARKING LMBTH10LT1G = 3EQ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , g ib ­10 60 ­20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE(mmhos) 70 ­b ib 40 30 , 50 600 100 40 700 ­g fb 30 jb fb(mmhos) y ib , FORWARD TRANSFER ADMITTANCE
Leshan Radio Company
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LMBTH10QLT3G

transistor marking 3em

Abstract: MMBTH10LT1 MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol , RJA 417 °C/W TJ, Tstg ­55 to +150 °C CASE 318 SOT­23 STYLE 6 ORDERING INFORMATION Device Package Shipping MMBTH10LT1 SOT­23 3000/Tape & Reel MMBTH10­4LT1 (1) FR­5 = 1.0 x 0.75 x 0.062 in. (2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina SOT­23 3000
ON Semiconductor
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KMB3D0P30SA

Abstract: SEMICONDUCTOR KMB3D0P30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking KPA 1 No. 0 8 2. Marking 2 Item Marking Description Device Mark KPA KMB3D0P30SA - - - * Lot No. 08 2006. 08 Week [0:1st Character, 8:2nd Character] Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st , . JA, JB .EA, EB Remark JA : 2009. 1st Week, JB : 2009. 2nd Week : EA : 2009. 51th Week
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KMA2D4P20SA

Abstract: SEMICONDUCTOR KMA2D4P20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KB2 0 1 2. Marking 2 Item Marking Description Device Mark , Character] Note) * Lot No. marking method Year Periode (Year) Remark 01 : 2006. 1st Week, 02 , , 2017. E1 : 2008. 51th Week, E2 : 2008. 52th Week. JA : 2009. 1st Week, JB : 2009. 2nd Week JA, JB .EA, EB* EA : 2009. 51th Week, EB : 2009. 52th Week. * : Meaning (A=1, B=2, C=3, D=4, E
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KMA3D0N20SA

Abstract: SOT23 marking j1 SEMICONDUCTOR KMA3D0N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 0 6 2. Marking 2 Item Marking Description Device Mark KNC KMA3D0N20SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st , . JA, JB .EA, EB Remark JA : 2009. 1st Week, JB : 2009. 2nd Week : EA : 2009. 51th Week
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SOT23 marking j1 marking A1 6 H8 SOT-23

sot-23 MARK KND

Abstract: KMB2D0N60SA SEMICONDUCTOR KMB2D0N60SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KND 0 6 2. Marking 2 Item Marking Description Device Mark KND KMB2D0N60SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st , . JA, JB .EA, EB Remark JA : 2009. 1st Week, JB : 2009. 2nd Week : EA : 2009. 51th Week
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sot-23 MARK KND SOT23 MARKING 5B sot-23 MARK e5

JB Sot23

Abstract: KMB4D0N30SA SEMICONDUCTOR KMB4D0N30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNA 5 1 2. Marking 2 Item Marking Description Device Mark KNA KMB4D0N30SA - - - * Lot No. 51 2006. 51 Week [0:1st Character, 8:2nd Character] Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st , . JA, JB .EA, EB Remark JA : 2009. 1st Week, JB : 2009. 2nd Week : EA : 2009. 51th Week
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marking m1

Abstract: KTK919S SEMICONDUCTOR KTK919S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. M1 0 1 2. Marking 2 Item Marking Description Device Mark M1 KTK919S * Lot No. 01 2006. 1st Week Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st Week, 02 : 2006. 2nd Week : 51 : 2006. 51th Week, 52 : 2006 , . 51th Week, E2 : 2008. 52th Week. JA, JB .EA, EB Remark JA : 2009. 1st Week, JB : 2009
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marking m1 M1 MARKING sot-23 Marking m1 SOT23 MARKING M1

Z02W100V

Abstract: Mark 10A SEMICONDUCTOR Z02W100V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. 10A 0 A 2. Marking 2 Item Marking Description Device Mark 10A Z02W100V * Lot No. 0A 2007. 1st Week Note) * Lot No. marking method Lot No. Description 01, 02 .51, 52 01 : 2006. 1st Week, 02 : 2006. 2nd Week : 51 : 2006. 51th Week, 52 , : 2008. 51th Week, E2 : 2008. 52th Week. JA, JB .EA, EB Remark JA : 2009. 1st Week, JB
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Mark 10A

E5 marking sot23

Abstract: 2N7002K SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date (Year/Week) Note) * Lot No. marking method * : Lot No. marking method Lot No. Description Remark 01 : 2002. 1st Week, 02 : 2002. 2nd Week 01, 02 , . 51th Week, E2 : 2004. 52th Week. JA : 2005. 1st Week, JB : 2005. 2nd Week JA, JB .EA, EB* EA
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E5 marking sot23 6 wc sot23 Marking E5 JA MARKING SOT23 MARK wc SOT23 E2- marking
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