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Part Manufacturer Description Datasheet BUY
282807-5 TE Connectivity (282807-5) 3P TERMI-BLOK PLUG,MARKED visit TE Connectivity
7-1571986-2 TE Connectivity (7-1571986-2) A101J1AV2Q004AM marking O - visit TE Connectivity
5-2023347-3 TE Connectivity (5-2023347-3) LCEDI UPPER SHELL WITH DATUM MARK PLATED visit TE Connectivity
2238156-1 TE Connectivity (2238156-1) MARK II POSITIVE LOCK 22-18 visit TE Connectivity
91592-1 TE Connectivity (91592-1) CERTICRIMP 2 22-18 MIC MARK II visit TE Connectivity
2-1546857-7 TE Connectivity (2-1546857-7) 3P VERT PLUG,GRAY,MARKED visit TE Connectivity

marking D50

Catalog Datasheet MFG & Type PDF Document Tags

uk ac 472m

Abstract: capacitor 222k 1kv , 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 20, 22, 24 1H Marking D5.0 50V 33, 36, 39 , 220000 100000 Marking D5.0 R 222M 25V 6.3D9.0 R 104M 25V SWC D10.0 22000 4.0 , , 150, 160, 180, 200, 220 5.0 0.50 CC (2.5) 6.3D9.0 D10.0 CC 2H D5.0 6.3D9.0 , CK 1H 06 D5.0 6.3D9.0 6800, 8200, 10000 470, 560, 680 50V DC 2700, 3300, 3900 , 4.0 5.0 0.50 CK 2H 08 D5.0 4700 - 10.0 4.0 5.0 0.50 CK 2H 10 B
SAMWHA
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222K 1KV

Abstract: capacitor 222k 1kv , 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 20, 22, 24 1H Marking D5.0 50V 33, 36, 39 , 220000 100000 Marking D5.0 R 222M 25V 6.3D9.0 R 104M 25V SWC D10.0 22000 4.0 , , 150, 160, 180, 200, 220 5.0 0.50 CC (2.5) 6.3D9.0 D10.0 CC 2H D5.0 6.3D9.0 , CK 1H 06 D5.0 6.3D9.0 6800, 8200, 10000 470, 560, 680 50V DC 2700, 3300, 3900 , 4.0 5.0 0.50 CK 2H 08 D5.0 4700 - 10.0 4.0 5.0 0.50 CK 2H 10 B
SAMWHA
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varistor svc 561 14

Abstract: Z5U 103M 1KV ) Appearance No marking defects 1±0.2Vrms X7R, X5R, Y5V (C >10) Y5V 5%/ 7%/ 9% 12.5%/ 15% 9 , marking defects - Testing time : 1000±12hrs Within ±3% or ±0.3 (whichever is larger) X7R, X5R , Constant Type No marking defects Capacitance Within ±2.5% or ±0.25 Change (whichever is larger , % 12.5%/ 15% 12.5% 15% Appearance No marking defects Capacitance Within ±5% or ±0.5 Change , marking defects shall occur Capacitance Within ±5% or ±0.5 Change (whichever is larger) Test Methods
SAMWHA
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MARKING A50

Abstract: marking D50 3 4 5 7 10 B50 & C50 Z(-25C)/Z(+20C) 2 2 2 3 4 6 9 D50 to DC5 2 2 2 2 3 4 7 A50 5 5 6 8 10 13 18 Z(-40C)/Z(+20C) B50 & C50 4 4 5 7 9 12 17 D50 to DC5 (at 120Hz) 3 3 4 6 8 10 15 The following , 2000 hours at 85C. Size code A50 B50 & C50 D50 to DC5 Capacitance change [P30% of the initial value , terminal> @Size code : A50 Marking H+0.1max. ?MARKING @Size code : B50 to DC5 H+0.2max. EX) 6.3V47MF 4 7 6 Marking 0.1max. PP0.3 W+0.2max. 1.6P0.1 L+0.2max. 1.1 1.5P0.2 Dummy terminal (only for
Nippon Chemi-Con
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EMF-350SDA150MD90G MARKING A50 marking D50 marking code A50 NIPPON CAPACITORS EMf-50 628-B EMF-4R0SDA470MC50G EMF-4R0SDA680MD70G EMF-4R0SDA101MD90G EMF-4R0SDA151MDC5G EMF-6R3SDA100MA50N EMF-6R3SDA100MB50G

63D50

Abstract: marking D50 Rated voltage (Vdc) B50 & C50 0.40 0.30 0.24 0.18 0.16 0.14 tanE (Max.) D50 to DC5 0.32 0.28 0.24 , B50 & C50 Z(-25C)/Z(+20C) 3 2 2 2 2 4 D50 to DC5 9 7 5 4 4 12 B50 & C50 Z(-40C)/Z(+20C) 8 6 4 3 3 D50 to DC5 10 (at 120Hz) The following specifications shall be satisfied when the , C50 D50 to DC5 Capacitance change [P30% of the initial value [P20% of the initial value D.F , applied. Size code B50 & C50 D50 to DC5 Capacitance change [P25% of the initial value [P15% of the
Nippon Chemi-Con
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63D50 EMFK emfk250 100MF EMFK160 Marking D70 EMFK6R3SDA100MB50G EMFK6R3SDA150MC50G EMFK6R3SDA220MD50G EMFK6R3SDA330MD70G EMFK6R3SDA680MD90G EMFK6R3SDA101MDC5G
Abstract: , copper-clad steel (CCFE)D30, D40: 0.025â' (22GA) D50 & Larger: 0.032â' (20GA) PART NUMBER AND ORDERING INFORMATION 30 D50 W M M Q No Leads Voltage Add to part number if required 30 , -49467 (subgroup 1) except Corona Style D50, etc. Dielectric N = C0G (NP0) W = X7R Y = X5U 122 Tolerance MARKING (D30) 301M 3kV KEC Date Code (All Other Sizes) D50W122M 3kV KEC Date Code , .250 7.8pF 9.6pF D40 .40 .250 20pF 25pF D50 .50 .375 36pF 44pF KEMET
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MIL-PRF-49467

KEC DATE code

Abstract: Kemet CAPACITOR DATE CODE MARKING ON ceramic Style D50, etc. Dielectric N = C0G (NP0) W = X7R Y = X5U Tolerance MARKING (D30) 301M 3kV , of zeros, i.e., 102=1000pF MARKING (HV20, HV21) 103K 1 kV KEC Date Code (All Other Sizes , , etc. Dielectric P = BP C0G (NP0) R = BR (X7R) Z = BZ (X7R) MARKING (All Other Sizes) (HV60, HV61 , C=CSAM MARKING (HS20, HV21) (All Other Sizes) 103K HS24B103K 1 kV 1 kV KEC KEC Date Code Date Code , -20%/+80% Voltage MARKING Not applicable As required by customer only. First two digits are
KEMET
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4XD50W122M KEC DATE code Kemet CAPACITOR DATE CODE MARKING ON ceramic Kemet CAPACITOR DATE CODE MARKING 7400 HV23 MILPRF-49467

50p03l

Abstract: DIN 6880 Marking SPD50P03L P-TO252-5-3 Q67042-S4076 50P03L SPD50P03L PG-TO252-5-3 SP000086729 , current I D,pulse T C=25 °C -200 Avalanche energy, single pulse E AS I D=-50 A, R GS=25 256 Reverse diode dv /dt dv /dt I D=-50 A, V DS=24 V, di /dt =-200 A/µs, T j,max=175 °C , IEC climatic category; DIN IEC 68-1 0) mJ the lead-free type is indicated by a 'G' marking on , on-state resistance R DS(on) V GS=-10 V, I D=-50 A - 5.7 7.0 Transconductance g fs
Infineon Technologies
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DIN 6880 P-TO252 P-TO252-5

50p03l

Abstract: INFINEON DATECODE Marking 50P03L 50P03L 0) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous , =25 °C I D=-50 A, R GS=25 I D=-50 A, V DS=24 V, di /dt =-200 A/µs, T j,max=175 °C mJ kV/µs V W °C , type is indicated by a 'G' marking on the package next to the datecode Rev. 1.4 page 1 , GS=-4.5 V, I D=-30 A V GS=-10 V, I D=-50 A |V DS|>2|I D|R DS(on)max, I D=-50 A -30 -1 -1.5 -2 V , Qg V plateau V DD=-24 V, I D=-50 A VDD=-24 V, ID=-50 A, VGS=0 to -10 V VDD=-24 V, ID=-50 A -14 -35
Infineon Technologies
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INFINEON DATECODE 50p03 SPD50P03LG

04N03LA

Abstract: IPD04N03LA Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , =4.5 V, I D=50 A - 4.8 5.9 m V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8 - 1.3
Infineon Technologies
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IPD04N03LA IPF04N03LA IPS04N03LA

04N03LA

Abstract: 04n03l Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , =4.5 V, I D=50 A - 4.8 5.9 m V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8 - 1.3
Infineon Technologies
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04n03l smd marking D50 smd diode marking c3
Abstract: Product Summary Package V DS Marking â'¢ Qualified according to JEDEC1) for target applications , IPS04N03LA IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking , , single pulse E AS I D=45 A, R GS=25 â"¦ 600 Reverse diode dv /dt dv /dt I D=50 A, V DS , ) V GS=4.5 V, I D=50 A - 4.8 5.9 mâ"¦ V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8 Infineon Technologies
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06N03LB

Abstract: Q67042-S4263 Type Ordering Code IPD06N03LB G Marking PG-TO252-3-11 Q67042-S4263 Package PG-TO251-3-11 On request Code Ordering PG-TO252-3-23 On request Marking 06N03LB 06N03LB PG-TO251-3-1 On request , , T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C , D=30 A V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 30 1.2 1.6 0.1 Values typ
Infineon Technologies
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IPU06N03LB IPS06N03LB IPF06N03LB

09n03lb

Abstract: PG-TO252-3-23 Package IPD09N03LB G Ordering Code IPF09N03LB G Marking PG-TO252-3-11 Package PG-TO251-3-11 Ordering Code PG-TO252-3-23 Marking 09N03LB On request 09N03LB 09N03LB PG-TO251-3-1 On request 09N03LB , E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 I D=50 A, V DS=20 V, di , R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=4.5 V, I D=25 A, SMD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max
Infineon Technologies
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IPU09N03LB IPS09N03LB Q67042-S4264 Q67042-S
Abstract: according to IEC61249-2-21 Type Package Marking BSC026N04LS PG-TDSON-8 026N04LS Maximum , ) E AS I D=50 A, R GS=25 W 50 mJ Gate source voltage V GS ±20 V 1) J-STD20 , resistance R DS(on) V GS=10 V, I D=50 A - 2.1 2.6 mW V GS=4.5 V, I D=50 A - 2.6 , Rev. 2.0 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-09-04 BSC026N04LS Parameter , V DD=20 V, I D=50 A, V GS=0 to 4.5 V - 16 - nC Gate charge total, sync. FET Q g Infineon Technologies
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JESD22
Abstract: ) Marking 014N04LI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , 31 400 50 90 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 W , resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance , mW RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 110 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB , Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V V DS Infineon Technologies
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BSC014N04LSI

144N06N

Abstract: plating, RoHS compliant Type IPD144N06N G Package PG-TO252-3 Marking 144N06N Maximum , ,pulse T C=25 °C2) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 240 Reverse diode dv /dt dv /dt I D=50 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate , ) V GS=10 V, I D=50 A - 11.3 14.4 m Gate resistance RG - 1.5 - Transconductance g fs 26 53 - S |V DS|>2|I D|R DS(on)max, I D=50 A 3) 2 Device on 40 mm x
Infineon Technologies
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Abstract: Package Marking BSC028N06NS PG-TDSON-8 028N06NS Maximum ratings, at T j=25 °C, unless , ) E AS I D=50 A, R GS=25 W 100 mJ Gate source voltage V GS ±20 V 1 , V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 , resistance R DS(on) V GS=10 V, I D=50 A - 2.5 2.8 mW V GS=6 V, I D=12.5 A - 3.4 , fs Rev.2.1 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-01-18 BSC028N06NS Infineon Technologies
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50K/W
Abstract: enlarged source interconnection Type Package Marking BSC010N04LSI PG-TDSON-8 FL 010N04LI , , single pulse4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS , resistance R DS(on) V GS=4.5 V, I D=50 A - 1.1 1.4 mW V GS=10 V, I D=50 A - 0.9 , Rev.2.1 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-09-18 BSC010N04LSI Parameter , total Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V - 45 - nC Gate charge total, sync Infineon Technologies
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Abstract: to IEC61249-2-21 Type Package Marking BSC010N04LSI PG-TDSON-8 (Fused Leads , I D=50 A, R GS=25 W 230 mJ Gate source voltage V GS ±20 V 1) J-STD20 and , resistance R DS(on) V GS=4.5 V, I D=50 A - 1.1 1.4 mW V GS=10 V, I D=50 A - 0.9 , |V DS|>2|I D|R DS(on)max, I D=50 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 , Gate plateau voltage V plateau - 2.4 - V Gate charge total Qg V DD=20 V, I D=50 Infineon Technologies
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