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marking A7 diode schottky

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -23 Dimensions : Inches (Millimetres) BAW56 Marking: A1 BAV99 Marking: A7 BAV70 Marking: A4 Mechanical Data Case Terminals Polarity Marking Weight : : : : : SOT-23, moulded plastic. Solderable per MIIL-STD-202, Method 208. See diagram. BAW56: A1, BAV70: A4, BAV99: A7. 0.008 gram , Capacitance VR, Forward Voltage (V) Part Number Table Description Part Number Diode, Schottky, SOT-23 BAV70 Diode, Schottky, SOT-23 BAV99 Diode, Schottky, SOT-23 BAW56 Page Multicomp
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schottky diode marking A7 diode ba 241 diode ba 204 ba 662 MARKING 358 sot-23 Diode bav99 BAW56/BAV70/BAV99
Abstract: â'" 35 V 0.25 V 5 0.65 0.85 1.05 pF Note 1. Schottky barrier diode is , substandard product will be negotiated by both parties. s Marking Y MA2S707 Schottky Barrier Diodes , 2SK1606 Schottky Barrier Diodes (SBD) MA2S707 Silicon epitaxial planer type Unit : mm , : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol : Y s Electrical Characteristics (Ta , = 0.5V, f =1MHz Conversion gain GC*1, 2 RF = 890MHz, LO= 935MHz, IF= 45MHz â'"7 â -
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890MH 935MH
Abstract: with nominal diode capacitance ±5% add suffix B to the device type number. SCHOTTKY BARRIER DIODES , SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices , -23 PACKAGE DEVICE MARKING: Type Code ZC2800E E6 ZC2810E E7 ZC2811E IE8 ZC5800E IE9 N.B. HIGH FREQUENCY , Schottky barrier diodes is covered more fully in the R.F.section. D10 SILICON ION IMPLANTED HYPERABRUPT -
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ZC2810-ZC2811 Diode Marking z3 SOT-23 Y1 SOT-23 marking code X5 SOT23 X2 marking code sot 23 MARKING X4 SOT23 SOT-23 MARKING w5 ZC2800 ZC2810 ZC2811 ZC5800 ZC281
Abstract: ‰¥ 35ÂuA Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due , Marking 5B MA733 Schottky Barrier Diodes (SBD) IF â'" VF IR â'" VR 103 Ct â'" VR 103 , MA111 Schottky Barrier Diodes (SBD) MA733 Silicon epitaxial planer type Unit : mm For , Ratings (Ta= 25˚C) ˚C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol : 5B , ÂuA 0.25 V 5 V 0.65 0.85 â'"7 â'"5 dB 100 200 V 1.05 pF -
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Abstract: Capacitance." 3-56 Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter , the Surface Mount Schottky Reliability Data Sheet. Description/ Applications These Schottky diodes are , designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching , Pah- 2807 A7 7 Ring Quad!® 2808 A8 8 Bridge QuadM 2810 B0 0 Single 2810 20 410 , . Package marking code is in white. Package marking codes for low profile are designated by a suffix "L". 4 -
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HSMS-28XX HSMS-2840 marking codes sot-23 A4 diode hp 2800 CI 2840 mark a7 sot23 DIODE HSMS2840 10AU5
Abstract: Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This Instrument , Capacitance vs. Reverse Voltageâ'"HSMS-2820 Series. Applications Information Schottky Diode Fundamentals See , Whn% HEWLETT® WLfiM PACKARD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS , Versions â'¢ Tape and Reel Options Available â'¢ For more information see the Surface Mount Schottky , /Applications These Schottky diodes are specifically designed for both analog and digital applications. This -
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HSMS-2800 HSMS-2810 HSMS-2860 hp 2800 diode HP 2804 diode hp 2835 schottky marking code C9 MARKING CODE t4 diode anode common 5965-8839E 5966-0947E 5966-4285E
Abstract: Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates , Wfw\ HA C KLAERTD mLUMP E W T Surface Mount RF Schottky Barrier Diodes Technical Data HSMS , information see the Surface Mount Schottky Reliability Data Sheet. Description/ Applications These Schottky diodes are specifically designed for analog and digital applications requir­ ing devices in , Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. Package Lead -
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Diode marking MFW Diode sot23 marking MFW L31 diode sot-23 sot23 marking MFW diode T31 Marking MFW SOT23 H09MX47 004XU 44475A4 SMX-28XX RS-481
Abstract: Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument , Schottky Diode Fundamentals See the HSMS-280A series data sheet. 3-40 0 2 4 6 8 10 , Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package , Surface Mount Schottky Reliability Data Sheet. #0 #5 2 #2 2 RING QUAD 3 4 1 #7 2 Description/Applications These Schottky diodes are specifically designed for both analog and Hewlett-Packard
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Schottky Diode Marking C3 2805 diode bridge diode marking code C3 sot23 hp 2817 A5 sot-23 single DIODE 2813 HP
Abstract: . Electrical Specifications TA = 25°C, Single Diode[4] Part Package Number Marking Lead HSMS[5] Code Code , Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This , Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features · Surface , the Surface Mount Schottky Reliability Data Sheet. Description/Applications These Schottky , QUAD 5 2 4 R 3 2 Pin Connections and Package Marking, SOT-363 GUx 1 2 3 Agilent Technologies
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agilent RF Marking 07 AN1124 HSMS-280X marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280 SC-70 5968-2356E 5968-5943E 5968-7960E
Abstract: 2865 Package Marking Code!3! A0 A2 A3 A4 A5 A7 A8 B0 B2 B3 B4 B5 B7 B8 CO C2 C3 C4 (-5 07 Lead , Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively , . Reverse V oltage-HSMS-2820 Series. Applications Information Schottky Diode Fundamentals See the HSMS , rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data , Versions · Tape and R eel Options Available · For more information see the Surface Mount Schottky -
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marking 2U diode t5 marking 2U diode HSMS2820 HSMS-2860 equivalent C3 SOT23 B7 SOT23
Abstract: Twin Diode Schottky Barrier Diode SG20SC6M OUTLINE 60V 20A â'¢ Tj=15ffC â'¢ /F â'¢ DC/DC , for the marking, refer to the specification "Marking, Terminal Connection". I^fêlë RATINGS , , Resistance load, Per diode lo/2, To = 107"C 20 A â IMJWâ'" y«fil1EiilE Peak Surge Forward Current Ifsm , i^is*>«ftfêtt if iu.\. Pulse measurement. Per diode TYP 0.54 MAX 0,61 V ffiww Reverse Current Ir Vu =fif)V 1$ / =' ! 0 ©fil&M ou v. pulse measurement, Per diode MAX 0.8 mA «irSit Junction Capacitance -
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MARKING FY FTO-220G J533-1 CJ533-1
Abstract: Twin Diode Schottky Barrier Diode SG20SC6M mmm outline 60V 20A â'¢ Tj=150Tî â'¢ DC/DC â'¢ mm , , refer to our web site. As for the marking, refer to the specification "Marking, Terminal Connection , -Kii. mutm. im ^^nBsjy^mvuo^. Tc=io7t 50Hz sine wave. Resistance load, Per diode lo/2, Tc=107"C 20 A Peak , 1.-10A ' k uu v, pulse measurement. Per diode MAX 0.8 m A xftmk Junction Capacitance Cj f= 1MHz -
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251 3j diode marking aj tw-104 XW marking
Abstract: Dissipation at T t^ ad = 25°C. Derate to zero at maximum rated temperature. Capacitance of Schottky diode , Voltage-HSMS-2820 Series. Applications Inform ation Schottky Diode Fundamentals See the HSMS-280A series , Thp% mürA Surface Mount RF Schottky Barrier Diodes HEW LETT« PACKARD Technical Data HSMS , more information see the Surface Mount Schottky Reliabilily Data Sheei S T #= 2 m *#7 _2 11# 8 21 W #92 These Schottky diodes are specifically designed for both analog and digital -
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diode hp 2810 HP 2810 HP 2835 306 diode hp 2835 diode hp 2815 LT 2807 1997H
Abstract: 27pF R17 4.75K PDC LDV L14 1.8uH CR18 DIODE SCHOTTKY 1N5818 CT[0.1] CT0 CT1 TP20 LUMA CR17 DIODE SCHOTTKY 1N5818 VHS VVS RESET D0 D1 D2 D3 D4 D5 D6 D7 C75 3.3K .1uF VREF R40 75 R22 39 COMP J9 COMPOSITE 1.8uH CR20 DIODE SCHOTTKY , PD22 PD23 TP21 COMP CR19 DIODE SCHOTTKY 1N5818 U28 PXCK VCC TP19 CHROMA CR15 DIODE SCHOTTKY 1N5818 TMC22191ROC L13 J7 CHROMINANCE 1.8uH CR16 DIODE SCHOTTKY 1N5818 Raytheon
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MXO-55GA-2C PLCCB-44-PS-T CCIR-656-format CTS MXO-55GA-2C rotary encoder schematic 74ls74 pin configuration TMC2063 TMC22091 TMC2490 CCIR-656- TMC2063P7C CCIR-601
Abstract: 75 CR15 DIODE SCHOTTKY 1N5818 CR16 DIODE SCHOTTKY 1N5818 VCC L8 1.0uH R33 75 CR17 DIODE SCHOTTKY 1N5818 CR18 DIODE SCHOTTKY 1N5818 VCC L9 1.0uH R34 75 CR19 DIODE SCHOTTKY 1N5818 CR20 DIODE SCHOTTKY 1N5818 VCC C58 100pF R38 75 C60 100pF , R23 475 C47 .1uF 750 R25 R27 5K CR7 1.235V VCC CR11 DIODE SCHOTTKY 1N5818 CR9 DIODE SCHOTTKY 1N5818 L4 1.0uH CR10 DIODE SCHOTTKY 1N5818 VCC L5 1.0uH CR12 Fairchild Semiconductor
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ICA-286-S-TG ICA203STG 74LS05 inverter MC74LS74 MC10125P r3175 DS70002063
Abstract: . Forward Current, Fig.5 Power Derating Curve Device Marking: Device P/N BAV99W Marking code A7 , Diode, Transistor and Schottky Diode. Package: SOT-23 / SOT-323 / SOT-523 Device Code Pb free " , BAV99W SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 75 Volts FORWARD CURRENT , Voltage Typical Diode Capacitance Reverse Recovery time Test Condition IR = 100uA IF = 1mA IF = 10mA IF = , SEMICONDUCTOR Issued Date: Jan'1, 2013 New Marking Rule Notification Range: In order to have well Lite-On Semiconductor
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J-STD-020D 2002/95/EC
Abstract: Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions  , Schottky barrier diode faciliteting high-density mounting. unit:mm 2133 [FX901] Electrical , '"15 V â'"11 V VEBO IC â'"7 V â'"3 A ICP â'"5 [TR] Collector-to-Base , Tch 150 ˚C IO 500 mA [SBD] Average Rectified Current · Marking:901 , '"1mA, RBE=➠â'"11 V E-B Breakdown Voltage V(BR)EBO IE=â'"10ÂuA, IC=0 â'"7 V Turn-ON SANYO Electric
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EN5387
Abstract: Device Device Device Type marking Type marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA HD2A 5D BAV99 A7 BAW56 Al HD3A , Volts mA ns 10 I 50 I 100 BAS 16 Single diode 75 100 6 0.855/1.0/ - FMMD914 Single diode 75 75 4/8 1.0 /-/- HD3A Single diode 75 100 6 1.0 /-/- BAL99 Single diode 70 100 6 0.855/1.1/1.3 BAR99 Single diode 70 100 6 0.855/1.1/1.3 FMMD6050 Single diode 70 100 6 - /-/1.1 BAV70 Dual diode with common -
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BZX84-C27 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 diode MARKING c9 BZX84-C2V7 BZX84-C3V0 ZC830 BZX84-C3V3 ZC830A BZX84-C3V6
Abstract: Twin Diode Schottky Barrier Diode SG20TC15M mtm® OUTLINE 150V 20A â'¢ Tj=175°C â'¢ , site. As for the marking, refer to the specification "Marking, Terminal Connection". lÃ'fàm RATINGS , -â'" â¡ Ã'7 & fa '-UU ^ Conditions -_JypeNo. SG20TC15M iji© Unit Storage Temperature Tstg , , Resistance load, Per diode lo/2, Tc-136°C 20 A Peak Surge Forward Current Ifsm 50HzIE3£?S, #«f)iSLl+ ï à , 10A if iw/i. Pulse measurement, Per diode MAX 0.88 TYP 0.81 V vtrnm Reverse Current Ir v - 1 iov s -
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diode ir30 gi diode SS81
Abstract: Twin Diode Schottky Barrier Diode SG30TC15M mtm® OUTLINE 150V 30A â'¢ Tj=175°C â'¢ , our web site. As for the marking, refer to the specification "Marking, Terminal Connection". lÃ'fàm , Item Symbol -â'" â¡ Ã'7 & fa '-UU ^ Conditions -_JypeNo. SG30TC15M iji© Unit Storage , sine wave, Resistance load, Per diode lo/2, Tc-122°C 30 A Peak Surge Forward Current Ifsm 50HzIE3 , Voltage Vf t r A '«^xjiffi, 1*7-3 n -
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