NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: limiting values above which the serviceability of the diode may be impaired. Electrical Characteristics , LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 2V4 2V7 3V0 3V3 3V6 BZX55C3V9 BZX55C3V9 BZX55C4V3 BZX55C4V3 BZX55C4V7 BZX55C4V7 BZX55C5V1 BZX55C5V1 BZX55C5V6 BZX55C5V6 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 3V9 4V3 4V7 5V1 5V6 BZX55C6V2 BZX55C6V2 BZX55C6V8 BZX55C6V8 BZX55C7V5 BZX55C7V5 BZX55C8V2 BZX55C8V2 BZX55C9V1 BZX55C9V1 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 6V2 6V8 7V5 8V2 9V1 BZX55C10 BZX55C10 BZX55C11 BZX55C11 BZX55C12 BZX55C12 BZX55C13 BZX55C13 BZX55C15 BZX55C15 LOGO ... | Original |
4 pages, |
Zener 4v7 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C47 BZX55C4V3 BZX55C4V7 BZX55C56 BZX55C5V1 BZX55c5v1 Series DIODE 5C BZX55C2V4 abstract |
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| Abstract: BAT54S BAT54S A1 K2 K1,A1 1 2 1 2 2 N.C. (1) BAT54 BAT54 (2)BAT54A BAT54A 2 1 Marking: 3 3 (3)BAT54C BAT54C 1 2 (4)BAT54S BAT54S Diode configuration and symbol BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 Type BAT54 BAT54 N3 BAT54AN3 BAT54AN3 BAT54CN3 BAT54CN3 BAT54SN3 BAT54SN3 Marking Code JV3 B6 5C LD3 , Package. CYStek Package Code: N3 J · BAT54 BAT54 N3: Single Diode (Marking Code JV3) · BAT54AN3 BAT54AN3: Common Anode. (Marking Code B6) · BAT54CN3 BAT54CN3: Common Cathode. (Marking Code 5C) · BAT54SN3 BAT54SN3: Series Connected. ... | Original |
4 pages, |
marking ld3 B6 DIODE schottky smd transistor marking n3 smd transistor marking ld3 marking CODE n3 DIODE smd marking A1 marking K2 diode smd transistor marking jv3 diode Marking code jv3 f smd diode marking code a2 marking code a2 SMD diode DIODE SMD MARKING 5C C302N3-L BAT54N3/BAT54AN3 C302N3-L abstract |
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| Abstract: application Ordering Information Part Number Marking Code Package Packaging SDS142WMF SDS142WMF 5C SOT-323F Tape & Reel Marking Information 5 C = Specific Device Code 5C = Year & Week Code Marking Pinning Information Pin Description 1 Anode (Diode 1) 2 Cathode (Diode 2) 3 , SDS142WMF SDS142WMF SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual , device (SMD) packages. Features and Benefits Silicon epitaxial planar diode High ... | Original |
5 pages, |
SOT323F SDS142WMF marking 5c diode DIODE SMD MARKING 5C SDS142WMF abstract |
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| Abstract: ,T, = 150°C(Max.) Part Number Description Marking Process V br Ir vF Co Max. (pF) trr (ns) Min. (V) @Ir (ixA) Max. CiulA) @vR (V) Max. (V) @ lF (mA) TMPD459 TMPD459 Single Diode 459 TR 200 100 0.025 175 1 50 10 _ TMPD914 TMPD914 Single Diode 5D TS 100 100 5.00 75 1 10 4 4 TMPD2835 TMPD2835 Common Anode A3 DO 35 100 , 100 0.10 30 1 10 4 4 TMPD2838 TMPD2838 Common Cathode A6 DB 75 100 0.10 50 1 10 4 4 TMPD4148 TMPD4148 Single Diode 5D TS 100 100 0.025 20 1 10 4 4 TMPD4150 TMPD4150 Single Diode ABA TS 75 10 0.10 50 1 200 2.5 4 TMPD4153 TMPD4153 Single ... | OCR Scan |
1 pages, |
TMPD4148 TMPD2838 TMPD2837 TMPD2836 TMPD2835 A6 DIODE 1n4148 1N4148 chip 1N4148 diode A6 l dual diode marking A3 Sprague 1n914 1n4148 5D mark tnd905 diode 5d T0-263AA S0T23 T0-263AA abstract |
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| Abstract: SONY SLD324ZT SLD324ZT High-Power Density 2 W Laser Diode Description The SLD324ZT SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal , processes • Measurement Structure GaAIAs quantum well structure laser diode Absolute Maximum Ratings , resistance Rth Ttn=25 t 10 kQ Marking Production factory 3 7 1 â-¡ , â-¡ â-¡ â-¡ â-¡ Lot No. Categories are not specified by marking. Handling Precautions Eye protection against laser beams The optical ... | OCR Scan |
6 pages, |
SLD324ZT-3 SLD324ZT-25 SLD324ZT-24 SLD324ZT-21 SLD324ZT-2 SLD324ZT-1 SLD324ZT SLD324ZT abstract |
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| Abstract: TVS Diode Arrays (SPATM Family of Products) Lightning Surge Protection - SLVU2.8-4 Series , , CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with , voltages. TVS Diode Arrays (SPATM Family of Products) Lightning Surge Protection - SLVU2.8-4 Series , 2.5 8.5 15.0 A V V kV kV pF Clamping Voltage ESD Withstand Voltage1 Dynamic Resistance Diode , Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPATM Family of ... | Original |
4 pages, |
marking 5c diode datasheet abstract |
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| Abstract: SONY. SLD303XT SLD303XT 500mW High Power Laser Diode_ For the availability of this product, please , laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an , GaAIAs double-hetero laser diode Applications • Solid state laser excitation • Medical use 3 3.Q10 0 , Thermistor lead 2 4 Laser diode anode 5 Laser diode cathode 6 Photodiode cathode 7 Photodiode anode 8 TE , ranges from several milliwatts to one watt However the optical density of the laser beam at the diode ... | OCR Scan |
7 pages, |
SLD303XT-3 SLD303XT-21 SLD303XT-2 SLD303XT-1 SLD303XT JD 803 diode 4j laser diode cd sony SLD303XT abstract |
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| Abstract: SONY SLD304XT SLD304XT lOOOmW High Power Laser Diode Description SLD304XT SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an , GaAIAs double-hetero laser diode Applications • Solid state laser excitation • Medical use Package , Thermistor lead 2 4 Laser diode anode 5 Laser diode cathode 6 Photodiode cathode 7 Photodiode anode 8 TE , ranges from several milliwatts to one watt However the optical density of the laser beam at the diode ... | OCR Scan |
7 pages, |
SLD304XT-3 SLD304XT-21 SLD304XT-2 SLD304XT-1 SLD304XT marking 5c diode SLD304XT abstract |
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| Abstract: sony_SLD304V SLD304V lOOOmW High Power Laser Diode For the availability of this product, please contact , GaAIAs double-hetero laser diode Absolute Maximum Ratings (Tc=15°C) • Radiant power output Po • , View) No. Function 1 Laser diode cathode 2 Photodiode anode 3 Common - 1 - E70778C13-HP E70778C13-HP Sony , mW/mA "Wavelength Selection Classification Marking Type Wavelength (nm) SLD304V-1 SLD304V-1 785±15 , the optical density of the laser beam at the diode chip reaches 1 megawatt per square centimeter. ... | OCR Scan |
7 pages, |
sony tc SLD304V-3 SLD304V-21 SLD304V-2 SLD304V-1 SLD304V SLD304V abstract |
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| Abstract: Sony_SLD304V SLD304V lOOOmW High Power Laser Diode Description SLD304V SLD304V are gain-guided, high-power , excitation • Medical use Structure GaAIAs double-hetero laser diode Absolute Maximum Ratings (Tc=15°C) • , ) Pin Configuration (Bottom View) No. Function 1 Laser diode cathode 2 Photodiode anode 3 Common - , Slope efficiency 7/d Po = 900mW 0.65 0.85 mW/mA "Wavelength Selection Classification Marking Type , several milliwatts to one watt. However the optical density of the laser beam at the diode chip reaches 1 ... | OCR Scan |
7 pages, |
SLD304V-3 SLD304V-21 SLD304V-2 SLD304V-1 SLD304V 2 Wavelength Laser Diode SLD304V abstract |
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| W Tstg Tj Storage and Junction Temperature Range - 55 to + 150 150 5 C ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Rth(j-a) Junction-ambient * 625 5 C/W Rth(j-SR) Junction-Substrate 400 5 C . Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj = 25 5C I F = 250 mA 1 I R * Tj = 25 5C V R = 1.5 V 0.5 m A Tj = 60 5C 5 Tj = 25 5C V R = 10 V 0.8 Tj = 60 5C 7.5 Tj = 25 5C V R = 50 V 2 Tj = 60 5C 15 Tj = 25 5C V R = 75 V 5 Tj = 60 5C 20 * Pulse www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2935-v1.htm |
STMicroelectronics | 02/04/1999 | 3.48 Kb | HTM | 2935-v1.htm |
| Current* T a = 25 5 C 350 mA I FRM Repetitive Peak Fordward Current* t p 3 1s d s 1.5 P tot Power Dissipation* T a = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-ambient* 300 5 C/W THERMAL RESISTANCE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3296-v3.htm |
STMicroelectronics | 25/05/2000 | 6.39 Kb | HTM | 3296-v3.htm |
| Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current* T a = 25 5 C 350 mA I FRM * t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation* T a = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-ambient* 300 5 C/W THERMAL RESISTANCE * On www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3296.htm |
STMicroelectronics | 20/10/2000 | 6.8 Kb | HTM | 3296.htm |
| TMMBAT48 TMMBAT48 TMMBAT48 TMMBAT48 Unit V RRM Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current T l = 25 5 C Forward Current t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation T l = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to 150 - 65 to 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/5 * Pulse test: t p 3 300 m s d < 2% . Symbol Test www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3500-v2.htm |
STMicroelectronics | 14/06/1999 | 4.53 Kb | HTM | 3500-v2.htm |
| TMMBAT48 TMMBAT48 TMMBAT48 TMMBAT48 Unit V RRM Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current T l = 25 5 C Forward Current t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation T l = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to 150 - 65 to 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/5 * Pulse test: t p 3 300 m s d < 2% . Symbol Test www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3500-v1.htm |
STMicroelectronics | 02/04/1999 | 4.57 Kb | HTM | 3500-v1.htm |
| Repetitive Peak Reverse Voltage 4 V I F Forward Continuous Current T i = 25 5 C 30 mA I FSM Surge non to +125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 400 5 C/W THERMAL RESISTANCE (1 , tuned on 30MHz, has a noise figure 1.5dB Symbol Test Conditions Min. Typ. Max. Unit V BR T amb = 25 5 C I R = 10 m A 4 V V F (1) T amb = 25 5 C I F = 10mA 0.6 V I R (1) T amb = 25 5 C V R = 3V 0.25 m A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3492-v1.htm |
STMicroelectronics | 14/06/1999 | 3.75 Kb | HTM | 3492-v1.htm |
| Repetitive Peak Reverse Voltage 4 V I F Forward Continuous Current T i = 25 5 C 30 mA I FSM Surge non to +125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 400 5 C/W THERMAL RESISTANCE (1 , tuned on 30MHz, has a noise figure 1.5dB Symbol Test Conditions Min. Typ. Max. Unit V BR T amb = 25 5 C I R = 10 m A 4 V V F (1) T amb = 25 5 C I F = 10mA 0.6 V I R (1) T amb = 25 5 C V R = 3V 0.25 m A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3492.htm |
STMicroelectronics | 02/04/1999 | 3.79 Kb | HTM | 3492.htm |
| Voltage 100 V I F Forward Continuous Current T l = 25 5 C 150 mA I FRM Repetitive Current t p = 10ms 750 mA P tot Power Dissipation T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3499-v3.htm |
STMicroelectronics | 25/01/2001 | 5.73 Kb | HTM | 3499-v3.htm |
| Repetitive Peak Reverse Voltage 100 V I F Forward Continuous Current T l = 25 5 C 150 mA I FRM Current t p = 10ms 750 mA P tot Power Dissipation T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/4 * Pulse test: t p 3 300 m s www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3499.htm |
STMicroelectronics | 20/10/2000 | 6.11 Kb | HTM | 3499.htm |
| V I F Forward Continuous Current* T a = 25 5 C 150 mA I FRM Repetitive Peak Forward Current* t p 3 1 Dissipation* T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 300 5 C/W THERMAL RESISTANCE Conditions Min. Typ. Max. Unit V BR T j = 25 5 C I R = 10 m A 100 V V F * T j = 25 5 C I F = 0.1mA 0.25 V T j www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3295-v1.htm |
STMicroelectronics | 02/04/1999 | 4.26 Kb | HTM | 3295-v1.htm |