NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
SEP8706-003 Honeywell Sensing and Control SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ri Buy
SEP8705-002 Honeywell Sensing and Control SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package ri Buy
SEP8705-003 Honeywell Sensing and Control SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package ri Buy

marking 5c diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: Temperature Range * These ratings are limiting values above which the serviceability of the diode may be , LOGO LOGO Line 2 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C Line 3 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 , required in the device specification (PID or FSC Test Spec). 6.0 Maximum no. of marking lines: 3 7.0 Maximum no. of digits per line: 2 8.0 FSC logo must be 20 % taller than the alphanumeric marking and ... Original
datasheet

6 pages,
228.95 Kb

BZX55C5V1 marking XY diode marking 5c 5C MARKING BZX55-C24 BZX55C56 BZX55C4V3 5C diode Marking 5c zener diode 5C 3v3 bzx55c5v6 marking 5c diode 55C 3V0 ZENER DIODE BZX55C2V4 BZX55C2V4 BZX55C56 BZX55C2V4 abstract
datasheet frame
Abstract: Temperature Range * These ratings are limiting values above which the serviceability of the diode may be , LOGO LOGO Line 2 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C 5C Line 3 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 , required in the device specification (PID or FSC Test Spec). 6.0 Maximum no. of marking lines: 3 7.0 Maximum no. of digits per line: 2 8.0 FSC logo must be 20 % taller than the alphanumeric marking and ... Original
datasheet

6 pages,
228.21 Kb

BZX55C12 55C 3V9 ZENER DIODE 55C 2v4 BZX55C2V4 BZX55C56 BZX55C2V4 abstract
datasheet frame
Abstract: limiting values above which the serviceability of the diode may be impaired. Electrical Characteristics , LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 2V4 2V7 3V0 3V3 3V6 BZX55C3V9 BZX55C3V9 BZX55C4V3 BZX55C4V3 BZX55C4V7 BZX55C4V7 BZX55C5V1 BZX55C5V1 BZX55C5V6 BZX55C5V6 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 3V9 4V3 4V7 5V1 5V6 BZX55C6V2 BZX55C6V2 BZX55C6V8 BZX55C6V8 BZX55C7V5 BZX55C7V5 BZX55C8V2 BZX55C8V2 BZX55C9V1 BZX55C9V1 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 6V2 6V8 7V5 8V2 9V1 BZX55C10 BZX55C10 BZX55C11 BZX55C11 BZX55C12 BZX55C12 BZX55C13 BZX55C13 BZX55C15 BZX55C15 LOGO ... Original
datasheet

4 pages,
107.23 Kb

zener diode 5C 3v3 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C47 BZX55C4V7 BZX55C5V1 BZX55c5v1 Series Zener 4v7 BZX55C56 BZX55C4V3 BZX55C2V4 abstract
datasheet frame
Abstract: BAT54S BAT54S A1 K2 K1,A1 1 2 1 2 2 N.C. (1) BAT54 BAT54 (2)BAT54A BAT54A 2 1 Marking: 3 3 (3)BAT54C BAT54C 1 2 (4)BAT54S BAT54S Diode configuration and symbol BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 Type BAT54 BAT54 N3 BAT54AN3 BAT54AN3 BAT54CN3 BAT54CN3 BAT54SN3 BAT54SN3 Marking Code JV3 B6 5C LD3 , Package. CYStek Package Code: N3 J · BAT54 BAT54 N3: Single Diode (Marking Code JV3) · BAT54AN3 BAT54AN3: Common Anode. (Marking Code B6) · BAT54CN3 BAT54CN3: Common Cathode. (Marking Code 5C) · BAT54SN3 BAT54SN3: Series Connected. ... Original
datasheet

4 pages,
183.64 Kb

B6 DIODE schottky DIODE smd marking k1 smd transistor marking jv3 marking K2 diode smd diode jv3 smd diode code B6 DIODE smd marking A1 diode Marking code jv3 diode Marking code jv3 f marking code a2 SMD diode A2 SMD CODE MARKING jv3 Marking C302N3-L BAT54N3/BAT54AN3 C302N3-L abstract
datasheet frame
Abstract: application Ordering Information Part Number Marking Code Package Packaging SDS142WMF SDS142WMF 5C SOT-323F Tape & Reel Marking Information 5 C = Specific Device Code 5C = Year & Week Code Marking Pinning Information Pin Description 1 Anode (Diode 1) 2 Cathode (Diode 2) 3 , SDS142WMF SDS142WMF SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual , device (SMD) packages. Features and Benefits Silicon epitaxial planar diode High ... Original
datasheet

5 pages,
245.37 Kb

SOT323F SDS142WMF DIODE 5C marking 5c diode DIODE SMD MARKING 5C SDS142WMF abstract
datasheet frame
Abstract: Diode (continued) Electrical Characteristics Symbol Bv Ir TA = 2 5°C unless o th e rw ise , M M B D 4148C 4148C C [IT 4148C 4148C C MARKING 5H M M BD 4148C 4148C A D6 D5 M M BD 4148SE 4148SE D4 * * * * * * 2J 1 2 NC 1 2 3 I 3 I 4148C 4148C A High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol W |V lo If TA = 2 5°C unless o th e , cycle operations Thermal Characteristics Symbol Pd R sja T A = 2 5°C unless o th e rw ise noted ... OCR Scan
datasheet

2 pages,
38.8 Kb

MBD4148 BD120 4148C BD4148 4148SE MBD4148/SE/CC/CA MBD4148/SE/CC/CA abstract
datasheet frame
Abstract: Tstg DEVICE MARKING MMBV432LT1 MMBV432LT1 = M4B ELECTRICAL CHARACTERISTICS (TA = 2 5'C unless otherwise , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silico n Tuning Diode This device is designed for FM , diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 , DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 iW 2 CASE 3 1 8 -0 8 , STYLE 9 S O T -23 (TO -236A -236A B ) 1 o HI | - IW-o 2 3 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current Total ... OCR Scan
datasheet

2 pages,
57.96 Kb

datasheet abstract
datasheet frame
Abstract: SONY SLD324ZT SLD324ZT High-Power Density 2 W Laser Diode Description The SLD324ZT SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal , processes • Measurement Structure GaAIAs quantum well structure laser diode Absolute Maximum Ratings , resistance Rth Ttn=25 t 10 kQ Marking Production factory 3 7 1 - , - - - - Lot No. Categories are not specified by marking. Handling Precautions Eye protection against laser beams The optical ... OCR Scan
datasheet

6 pages,
133.04 Kb

SLD324ZT-3 SLD324ZT-25 SLD324ZT-24 SLD324ZT-21 SLD324ZT-2 SLD324ZT-1 SLD324ZT marking AJ 7 SLD324ZT abstract
datasheet frame
Abstract: Symbol Vr Vr m * Tj Tstg Rating 34 35 150 - 55 to +150 Unit V V °C °C Marking Symbol : T 1 , 13.08 5.04 2.0 0.9 Unit nA pF pF pF pF pF C d (0V)*2 C d (2V) Diode capacitance C d (25V) C d ( io v ) C d (17V) Capacitance ratio Diode capacitance deviation Series resistance Cd(2V)/Cd , *2 : Low Signal Level Marking Panasonic V a ria b le C a p a c ita n c e D io d e s MA2S374 MA2S374 Cd - V r I f - Vf Cd - T a 5°C < E Ta= 60°C 80 -4 0 X 60 i 40 ... OCR Scan
datasheet

2 pages,
46.41 Kb

40 ria 120 marking 5c diode MA2S374 MA2S374 abstract
datasheet frame
Abstract: TVS Diode Arrays (SPATM Family of Products) Lightning Surge Protection - SLVU2.8-4 Series , , CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with , voltages. TVS Diode Arrays (SPATM Family of Products) Lightning Surge Protection - SLVU2.8-4 Series , 2.5 8.5 15.0 A V V kV kV pF Clamping Voltage ESD Withstand Voltage1 Dynamic Resistance Diode , Please refer to www.littelfuse.com/SPA for current information. TVS Diode Arrays (SPATM Family of ... Original
datasheet

4 pages,
856.95 Kb

marking 5c diode datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
DIODE BRIGE - (ASD) ADB18PS ADB18PS ADB18PS ADB18PS Document Format Size Document effective solution BENEFITS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. TM Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset MAIN APPLICATIONS The ADB18PS ADB18PS ADB18PS ADB18PS combines a diode bridge and a clamping protection pulse power dissipation (one pulse) 8 / 20 m s 100 W P Power dissipation T case = 70 5C
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5476-v3.htm
STMicroelectronics 25/05/2000 6.48 Kb HTM 5476-v3.htm
Datasheet AUTOPROTECTED DIODE BRIGE - (ASD AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. TM Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset MAIN APPLICATIONS The ADB18PS ADB18PS ADB18PS ADB18PS combines a diode bridge and a clamping protection function. Integrated monolithically s 100 W P Power dissipation T case = 70 5C 20 W V RRM Repetitive peak reverse voltage 18 V
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5476.htm
STMicroelectronics 20/10/2000 6.72 Kb HTM 5476.htm
ADB18PS ADB18PS ADB18PS ADB18PS AUTOPROTECTED DIODE BRIGE - (ASD) Document Number: 5476 Date Update solution BENEFITS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. TM Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset MAIN APPLICATIONS The ADB18PS ADB18PS ADB18PS ADB18PS combines a diode bridge and a clamping protection function. Integrated monolithically Power dissipation T case = 70 5C 20 W V RRM Repetitive peak reverse voltage 18 V I PP Peak pulse
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5476-v2.htm
STMicroelectronics 14/06/1999 4.65 Kb HTM 5476-v2.htm
ADB18PS ADB18PS ADB18PS ADB18PS AUTOPROTECTED DIODE BRIGE - (ASD) Document Number: 5476 Date Update solution BENEFITS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. TM Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset MAIN APPLICATIONS The ADB18PS ADB18PS ADB18PS ADB18PS combines a diode bridge and a clamping protection function. Integrated monolithically Power dissipation T case = 70 5C 20 W V RRM Repetitive peak reverse voltage 18 V I PP Peak pulse
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5476-v1.htm
STMicroelectronics 02/04/1999 4.69 Kb HTM 5476-v1.htm
BAR46A BAR46A BAR46A BAR46A * : dPtot dTj < 1 Rth ( j - a ) thermal runaway condition for a diode Unit C Tj = 25 5C V R = 0 V F = 1MHz 10 pF Tj = 25 5C V R = 1 V 6 DYNAMIC CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj = 25 5C I F = 250 mA 1 I R * Tj = 25 5C V R = 1.5 V 0.5 m A Tj = 60 5C 5 Tj = 25 5C V R
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2935-v3.htm
STMicroelectronics 25/01/2001 6.42 Kb HTM 2935-v3.htm
condition for a diode on its own heatsink VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW Max. Unit C Tj = 25 5C V R = 0 V F = 1MHz 10 pF Tj = 25 5C V R = 1 V 6 DYNAMIC CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj = 25 5C I F = 250 mA 1 I R * Tj = 25 5C V R = 1.5 V 0.5 m A Tj = 60 5C 5 Tj = 25 5C V R = 10 V 0.8 Tj = 60 5C 7.5 Tj = 25
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2935.htm
STMicroelectronics 20/10/2000 6.75 Kb HTM 2935.htm
SCHOTTKY DIODE BAT46AWFILM BAT46AWFILM BAT46AWFILM BAT46AWFILM BAT46CWFILM BAT46CWFILM BAT46CWFILM BAT46CWFILM BAT46JFILM BAT46JFILM BAT46JFILM BAT46JFILM BAT46SWFILM BAT46SWFILM BAT46SWFILM BAT46SWFILM BAT46WFILM BAT46WFILM BAT46WFILM BAT46WFILM Document / BAT46SW BAT46SW BAT46SW BAT46SW [ June 1999 - Ed: 2A SMALL SIGNAL SCHOTTKY DIODE High voltage schottky rectifier suited * : dPtot dTj < 1 Rth ( j - a ) thermal runaway condition for a diode on its own AND BENEFITS 1/5 Symbol Test conditions Min. Typ. Max. Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj =
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6712-v1.htm
STMicroelectronics 25/01/2001 7.04 Kb HTM 6712-v1.htm
Datasheet SMALL SIGNAL SCHOTTKY DIODE / BAT46W BAT46W BAT46W BAT46W BAT46AW BAT46AW BAT46AW BAT46AW /BAT46CW /BAT46CW /BAT46CW /BAT46CW / BAT46SW BAT46SW BAT46SW BAT46SW [ June 1999 - Ed: 2A SMALL SIGNAL SCHOTTKY DIODE High voltage ( j - a ) thermal runaway condition for a diode on its own heatsink K2 K2 K1 K1 A A Min. Typ. Max. Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj = 25 5C I F = 250 mA 1 I R * Tj = 25 5C V R = 1.5 V
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6712.htm
STMicroelectronics 20/10/2000 7.31 Kb HTM 6712.htm
NC NC NC NC Monolithic diode structure for high reliability Transient overvoltage and ESD surges NTSP1 is a monolithic diode structure especially designed to protect ISDN S/T interfaces against temperature for soldering during 10 s 260 5C ABSOLUTE MAXIMUM RATINGS (T amb = 25 5C) Type Parameter Test /50 m s 3 15 25 V I R Leakage current V R = 1.2 V, 25 5C V R = 1.2 V, 70 5C 1 5 m A m A C Capacitance V R = 1.2 V, F = 1 MHz 40 pF ELECTRICAL CHARACTERISTICS (T amb = 25 5C ) ) NTSP1 2/4 TEST CIRCUIT
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5644-v2.htm
STMicroelectronics 14/06/1999 4.52 Kb HTM 5644-v2.htm
Lin e A Lin e B Lin e B NC NC NC NC Monolithic diode structure for high reliability interface of terminal equipment MAIN APPLICATIONS The NTSP1 is a monolithic diode structure especially temperature for soldering during 10 s 260 5C ABSOLUTE MAXIMUM RATINGS (T amb = 25 5C) Type 1.2 V, 25 5C V R = 1.2 V, 70 5C 1 5 m A m A C Capacitance V R = 1.2 V, F = 1 MHz 40 pF ELECTRICAL CHARACTERISTICS (T amb = 25 5C ) ) NTSP1 2/4 TEST CIRCUIT
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5644-v3.htm
STMicroelectronics 25/05/2000 6.36 Kb HTM 5644-v3.htm