NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , VF = 0.9 V Max. @ IF = 10 mA for all types) Device ESD5Z5.0C Marking 5C VBR (V) @ IT (Note ... | Original |
3 pages, |
marking 5C IEC610004-4 IEC61000-4-4 datasheet abstract |
|
|||
| Abstract: BC807-25 BC807-25 BC807-40 BC807-40 ® SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type BC807-25 BC807-25 s s s 5B BC807-40 BC807-40 s Marking 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE BC817-25 BC817-25 AND BC817-40 BC817-40 RESPECTIVELY APPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-23 INTERNAL ... | Original |
4 pages, |
marking 5C BC817-40 BC817-25 BC807-40 BC807-25 bc807 BC807-25 abstract |
|
|||
| Abstract: BC807-25 BC807-25 BC807-40 BC807-40 ® SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type BC807-25 BC807-25 s s s 5B BC807-40 BC807-40 s Marking 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE BC817-25 BC817-25 AND BC817-40 BC817-40 RESPECTIVELY APPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-23 INTERNAL ... | Original |
4 pages, |
BC817-40 BC817-25 BC807-40 BC807-25 bc807 BC807-40/5C BC807-25 abstract |
|
|||
| Abstract: 0 30 40°C 5°C 25°C 40°C 85°C 40 0 40°C 5°C 25°C 40°C 85°C VDD = 5V 40°C 5°C 25°C 40°C 85°C 5 10 15 20 40°C 5°C 25°C VDD = 10V 40°C 40°C 85°C 5°C 25°C 40°C 85°C VDD = 5V 40 30 20 10 0 5 10 15 40°C 5°C 25°C , VOLTAGE: VOUT (V) VDD = 15V 85°C 25°C 40°C 5°C 40°C 12 85°C 25°C 40°C 5°C 40°C VDD = 10V 8 VDD = 5V 85°C 25°C 40°C 4 5°C 40°C 0 0 2 4 6 8 10 12 ... | Original |
3 pages, |
marking i7 BU4000B BU4S01 BU4S584 4000B BU4S66 BU4S71 BU4S81 BU4SU69 BU4S11 BU4S bu4s584 marking marking i2 BU4000B abstract |
|
|||
| Abstract: LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 2V4 2V7 3V0 3V3 3V6 BZX55C3V9 BZX55C3V9 BZX55C4V3 BZX55C4V3 BZX55C4V7 BZX55C4V7 BZX55C5V1 BZX55C5V1 BZX55C5V6 BZX55C5V6 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 3V9 4V3 4V7 5V1 5V6 BZX55C6V2 BZX55C6V2 BZX55C6V8 BZX55C6V8 BZX55C7V5 BZX55C7V5 BZX55C8V2 BZX55C8V2 BZX55C9V1 BZX55C9V1 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 6V2 6V8 7V5 8V2 9V1 BZX55C10 BZX55C10 BZX55C11 BZX55C11 BZX55C12 BZX55C12 BZX55C13 BZX55C13 BZX55C15 BZX55C15 LOGO LOGO LOGO LOGO LOGO 5C 5C 5C 5C 5C 10 11 12 13 15 BZX55C16 BZX55C16 BZX55C18 BZX55C18 BZX55C20 BZX55C20 ... | Original |
4 pages, |
Zener 4v7 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C47 BZX55C4V3 BZX55C4V7 BZX55C56 BZX55C5V1 BZX55c5v1 Series DIODE 5C BZX55C2V4 abstract |
|
|||
| Abstract: ) Ø21 120.0° 12.0 5.5 3.7 FEEDING 245°C 1~5°C/Sec MARKING 8.0 Ø250 (178) Ø80 200 10 Sec 1~5°C/Sec 100 1~9°C/Sec PREHEAT 0 60 Sec CARRIER TAPE AND REEL , SURFACE MOUNT CRYSTAL QSMC - 3120 Hy-Q International 1.9 5.0 0.8 2.3 1.20 3 4 MARKING 1.6 1.6 0.85 1.35 3.2 0.7 1 1.35 2 NOTE: Pin #2 and #4 are connected through cover, if case is connected to Ground frequency may drift. Suggested Pad Layout (Top ... | Original |
1 pages, |
hy-q 12.000M 12.000MHZ datasheet abstract |
|
|||
| Abstract: SURFACE MOUNT CRYSTALS QSMC - 3100 Hy-Q International 5.0 0.8 3.0 1.7 1.7 2.6 MARKING 3.2 1.8 1.4 Suggested Pad Layout (Top View) Ceramic 13.5 2.0 Ø1.5 2.0 2.0 4.0 1.7 INFRARED RAYS REFLOW 1.75 200 Sec (°C) Ø21 120.0° 12.0 5.5 3.7 FEEDING 245°C 1~5°C/Sec MARKING 8.0 Ø250 (178) Ø80 200 10 Sec 1~5°C/Sec 100 1~9°C/Sec PREHEAT 0 60 Sec CARRIER TAPE AND REEL DIMENSIONS TIME Ø13 ... | Original |
1 pages, |
hy-q 12.000MHZ 12.000M datasheet abstract |
|
|||
| Abstract: 70,000 Ohms Maximum Mode of Operation Tuning Fork, Turn over Temperature at 25°C ±5°C Drive , , Condition A MECHANICAL DIMENSIONS (all dimensions in millimeters) PIN 1 MARKING ORIENTATION 3.2 , MARKING 1 XXXXX XXXXX=Ecliptek Manufacturing Code 1 0.8 ±0.1 0.8 ±0.1 (X2 , Temperature (TP) Target Peak Temperature (TP Target) Time within 5°C of actual peak (tp) Ramp-down Rate , Maximum 250°C +0/-5°C 20 - 40 seconds 6°C/second Maximum 8 minutes Maximum Level 1 ... | Original |
4 pages, |
marking code S C E8WSDC12-32 E8WSDC12-32 abstract |
|
|||
| Abstract: Ohms Maximum Mode of Operation Tuning Fork, Turn Over Temperature at 25°C ±5°C Drive Level , 4 1 1.50 MAX Crystal 2 MARKING ORIENTATION 2 0.10 ±0.05 (x4) CONNECTION , MAX 0.55 ±0.10 0.30 ±0.10 (x4) Crystal LINE MARKING 1 1 CYXXXXX C=Frequency Code , Temperature (TP) Target Peak Temperature (TP Target) Time within 5°C of actual peak (tp) Ramp-down Rate , Seconds Maximum 250°C +0/-5°C 20 - 40 seconds 6°C/second Maximum 8 minutes Maximum Level 1 ... | Original |
4 pages, |
32-768K E5WSDC07-32 E5WSDC07-32 abstract |
|
|||
| Abstract: 65,000 Ohms Maximum Mode of Operation Tuning Fork, Turn Over Temperature at 25°C ±5°C Drive , 3 4 1 1.50 MAX Crystal 2 MARKING ORIENTATION 2 0.10 ±0.05 (x4 , 1.40 MAX 0.55 ±0.10 0.30 ±0.10 (x4) Crystal LINE MARKING 1 1 CYXXXXX C=Frequency , Temperature (TP) Target Peak Temperature (TP Target) Time within 5°C of actual peak (tp) Ramp-down Rate , Seconds Maximum 250°C +0/-5°C 20 - 40 seconds 6°C/second Maximum 8 minutes Maximum Level 1 ... | Original |
4 pages, |
E5WSDC12-32 E5WSDC12-32 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| TDA8763AM/5/C4 TDA8763AM5DB TDA8763AM5DB TDA8763AM5DB TDA8763AM5DB 9352 611 22512 Standard Marking * Tube Dry Pack SOT341 RFS TDA8763AM/5/C4 TDA8763AM5DB-T TDA8763AM5DB-T TDA8763AM5DB-T TDA8763AM5DB-T 9352 611 22518 Standard Marking * Reel Dry Pack, SMD, 13" SOT341 RFS TDA8763AM/5/C4 TDA8763AM/5/C4 9352 611 22118 Standard Marking * Reel Pack, SMD, 13" SOT341 RFS TDA8763AM/5/C4 TDA8763AM/5/C4 9352 611 22112 Standard Marking * Tube SOT341 RFS www.datasheetarchive.com/files/philips/pip/tda8763a_3-v1.html |
Philips | 14/02/2002 | 10.56 Kb | HTML | tda8763a_3-v1.html |
| W Tstg Tj Storage and Junction Temperature Range - 55 to + 150 150 5 C ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Rth(j-a) Junction-ambient * 625 5 C/W Rth(j-SR) Junction-Substrate 400 5 C . Unit V BR Tj = 25 5C I R = 100 m A 100 V V F * Tj = 25 5C I F = 0.1 mA 0.25 V Tj = 25 5C I F = 10 mA 0.45 Tj = 25 5C I F = 250 mA 1 I R * Tj = 25 5C V R = 1.5 V 0.5 m A Tj = 60 5C 5 Tj = 25 5C V R = 10 V 0.8 Tj = 60 5C 7.5 Tj = 25 5C V R = 50 V 2 Tj = 60 5C 15 Tj = 25 5C V R = 75 V 5 Tj = 60 5C 20 * Pulse www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2935-v1.htm |
STMicroelectronics | 02/04/1999 | 3.48 Kb | HTM | 2935-v1.htm |
| TMMBAT48 TMMBAT48 TMMBAT48 TMMBAT48 Unit V RRM Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current T l = 25 5 C Forward Current t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation T l = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to 150 - 65 to 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/5 * Pulse test: t p 3 300 m s d < 2% . Symbol Test www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3500-v2.htm |
STMicroelectronics | 14/06/1999 | 4.53 Kb | HTM | 3500-v2.htm |
| TMMBAT48 TMMBAT48 TMMBAT48 TMMBAT48 Unit V RRM Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current T l = 25 5 C Forward Current t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation T l = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to 150 - 65 to 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/5 * Pulse test: t p 3 300 m s d < 2% . Symbol Test www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3500-v1.htm |
STMicroelectronics | 02/04/1999 | 4.57 Kb | HTM | 3500-v1.htm |
| Current* T a = 25 5 C 350 mA I FRM Repetitive Peak Fordward Current* t p 3 1s d s 1.5 P tot Power Dissipation* T a = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-ambient* 300 5 C/W THERMAL RESISTANCE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3296-v3.htm |
STMicroelectronics | 25/05/2000 | 6.39 Kb | HTM | 3296-v3.htm |
| Repetitive Peak Reverse Voltage 20 40 V I F Forward Continuous Current* T a = 25 5 C 350 mA I FRM * t p = 10ms 7.5 A t p = 1s 1.5 P tot Power Dissipation* T a = 25 5 C 330 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-ambient* 300 5 C/W THERMAL RESISTANCE * On www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3296.htm |
STMicroelectronics | 20/10/2000 | 6.8 Kb | HTM | 3296.htm |
| Voltage 100 V I F Forward Continuous Current T l = 25 5 C 150 mA I FRM Repetitive Current t p = 10ms 750 mA P tot Power Dissipation T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3499-v3.htm |
STMicroelectronics | 25/01/2001 | 5.73 Kb | HTM | 3499-v3.htm |
| V I F Forward Continuous Current* T a = 25 5 C 150 mA I FRM Repetitive Peak Forward Current* t p 3 1 Dissipation* T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 10s at 4mm from Case 230 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 300 5 C/W THERMAL RESISTANCE Conditions Min. Typ. Max. Unit V BR T j = 25 5 C I R = 10 m A 100 V V F * T j = 25 5 C I F = 0.1mA 0.25 V T j www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3295-v1.htm |
STMicroelectronics | 02/04/1999 | 4.26 Kb | HTM | 3295-v1.htm |
| Repetitive Peak Reverse Voltage 100 V I F Forward Continuous Current T l = 25 5 C 150 mA I FRM Current t p = 10ms 750 mA P tot Power Dissipation T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/4 * Pulse test: t p 3 300 m s www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3499.htm |
STMicroelectronics | 20/10/2000 | 6.11 Kb | HTM | 3499.htm |
| Peak Reverse Voltage 100 V I F Forward Continuous Current T l = 25 5 C 150 mA I FRM Repetitive Peak tot Power Dissipation T l = 80 5 C 150 mW T stg T j Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 5 C 5 C T L Maximum Temperature for Soldering during 15s 260 5 C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-l) Junction-leads 300 5 C/W THERMAL RESISTANCE 1/4 * Pulse test: t p 3 300 m s d < 2% . Symbol Test Conditions Min. Typ. Max. Unit V BR T j = 25 5 C I R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3499-v2.htm |
STMicroelectronics | 14/06/1999 | 3.91 Kb | HTM | 3499-v2.htm |