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2-1546857-7 TE Connectivity (2-1546857-7) 3P VERT PLUG,GRAY,MARKED visit TE Connectivity

marking 31A

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marking 31A

Abstract: AN-994 = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A , Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD 31A, di/dt 840A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 1.0ms , D p-n junction diode. G TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt =
International Rectifier
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Abstract: VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = , Recovery Charge Forward Turn-On Time 1.2 35 26 S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs Ù Notes:  Repetitive rating; pulse , =0.18mH, RG = 25â"¦, IAS = 31A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 31A International Rectifier
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FDMA1025P

Abstract: FDMA1025P Dual P-Channel PowerTrench® MOSFET ­20V, ­3.1A, 155m Features tm General Description Max rDS(on) = 155m at VGS = ­4.5V, ID = ­3.1A This device is designed specifically as a , , Junction to Ambient 151 °C/W Package Marking and Ordering Information Device Marking 025 , = ­3.1A Forward Transconductance 155 144 220 VGS = ­4.5V, ID = ­3.1A,TJ = 125°C gFS 88 VGS = ­2.5V, ID = ­2.3A 121 220 VDS = ­5V, ID = ­3.1A 6.2 m S Dynamic
Fairchild Semiconductor
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Abstract: PowerTrench® MOSFET ­20V, ­3.1A, 155m Features General Description This device is designed specifically as a , suited to linear mode applications. Max rDS(on) = 155m at VGS = ­4.5V, ID = ­3.1A Max rDS(on) = 220m at , Resistance Dual Operation, Junction to Ambient (Note 1a) (Note 1b) 86 173 69 151 °C/W Package Marking and Ordering Information Device Marking 025 Device FDMA1025P Package MicroFET 2X2 Reel Size 7'' Tape Width 8mm , , referenced to 25°C VGS = ­4.5V, ID = ­3.1A VGS = ­2.5V, ID = ­2.3A VGS = ­4.5V, ID = ­3.1A,TJ = 125°C VDS = Fairchild Semiconductor
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AN-994

Abstract: IRFZ46Z to 25°C, ID = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15 VGS = 10V D Between lead, f f ns f nH 6mm (0.25in.) from , Recovery Charge Forward Turn-On Time 1.3 31 24 p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs à Notes: Repetitive rating; pulse width
International Rectifier
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IRFZ46Z IRFZ46ZS IRFZ46ZL AN-994 IRL3103L IRFZ46Z/S/L EIA-418

IRFZ46ZPBF

Abstract: AN-994 , ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15 VGS = 10V , p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs , Limited by TJmax, starting TJ = 25°C, L =0.13mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD 31A, di/dt 1070A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 1.0ms
International Rectifier
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IRFZ46ZPBF 1070A IRFZ46ZP IRFZ46ZSP IRFZ46ZLP IRFZ46Z/S/LP
Abstract: nC Conditions VGS = 0V, ID = 250µA Reference to 25° I D = 1mA C, VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15â"¦ VGS = 10V D , Forward Turn-On Time 1.3 31 24 p-n junction diode. TJ = 25°C, I S = 31A, VGS = 0V TJ = 25°C, I F = 31A, VDD = 28V di/dt = 100A/µs Ù Notes:  Repetitive rating; pulse width limited by International Rectifier
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31AZ

Abstract: FDFMA2P029Z ­20V, ­3.1A, 95m Features MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode , ­3.1A Max rDS(on) = 141m at VGS = ­2.5V, ID = ­2.5A Schottky VF < 0.37V @ 500mA Low profile - 0.8 , Package Marking and Ordering Information Device Marking .P29 Device FDFMA2P029Z Package MicroFET 2X2 1 , Forward Transconductance VGS = VDS, ID = ­250A ID = ­250A, referenced to 25°C VGS = ­4.5V, ID = ­3.1A VGS = ­2.5V, ID = ­2.5A VGS = ­4.5V, ID = ­3.1A,TJ =125°C VDS = ­10V, ID = ­3.1A ­0.6 ­1.0 4 60 88 87
Fairchild Semiconductor
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31AZ

FDMA1025P

Abstract: marking 31A FDMA1025P Dual P-Channel PowerTrench® MOSFET ­20V, ­3.1A, 105m Features tm General Description Max rDS(on) = 155m at VGS = ­4.5V, ID = ­3.1A This device is designed specifically as a , Ambient 151 °C/W Package Marking and Ordering Information Device Marking 025 Device , to Source On Resistance ­0.4 ­0.9 ­3.8 mV/°C VGS = ­4.5V, ID = ­3.1A Forward Transconductance 155 144 220 VGS = ­4.5V, ID = ­3.1A,TJ = 125°C gFS 88 VGS = ­2.5V, ID = ­2.3A
Fairchild Semiconductor
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marking 31A

AN-994

Abstract: = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A , Turn-On Time 1.2 35 26 S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A , temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD 31A, di/dt 840A/µs, VDD V(BR)DSS, TJ 175
International Rectifier
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IRFZ44ZP IRFZ44ZSP IRFZ44ZLP IRFZ44Z/S/LP
Abstract: °C, ID = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15â"¦ VGS = 10V Between lead, D f f ns f nH 6mm (0.25in.) from package , , starting TJ = 25°C, L =0.18mH, RG = 25â"¦, IAS = 31A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Â" Pulse width ≤ 1.0ms International Rectifier
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IRFZ44Z IRFZ44ZS IRFZ44ZL IRFZ44Z/S/L
Abstract: â'"20V, â'"3.1A, 155m Features General Description Max rDS(on) = 155m at VGS = â'"4.5V, ID = â'"3.1A Max rDS(on) = 220m at VGS = â'"2.5V, ID = â'"2.3A This device is designed , °C/W Package Marking and Ordering Information Device Marking 025 Device FDMA1025P ©2010 , '"4.5V, ID = â'"3.1A gFS Drain to Source On Resistance Forward Transconductance 88 155 VGS = â'"2.5V, ID = â'"2.3A 144 220 VGS = â'"4.5V, ID = â'"3.1A,TJ = 125°C rDS(on) 121 Fairchild Semiconductor
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IRFZ44Z

Abstract: IRF Power MOSFET code marking = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A , Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD 31A, di/dt 840A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 1.0ms , D p-n junction diode. G TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt =
International Rectifier
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IRF Power MOSFET code marking IRFZ44

aera siemens

Abstract: aeg power block 162 n IB ST 120/230 DO 8/3-1A l INTERBUS-ST Data Sheet Digital Output Module with Eight Channels Revision A 06/1996 Product Description The IB ST 120/230 DO 8/3-1A module transmits , 1: IB ST 120/230 DO 8/3-1A 5140A Phoenix Contact GmbH & Co. Postfach 1341 32819 Blomberg , IB STME 120/230 DO 8/3-1A INTERBUS UL CC BA E INTERBUS-S US E US E US , : Example of an electrical installation for the IB ST 120/230 DO 8/3-1A digital output module within an IB
Phoenix Contact
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aera siemens aeg power block 162 n s5 siemens plc PLC siemens s5 100 plc manual INTERBUS SIMATIC S5 PLC A500 AEG 5140A001 AC/230 5140A002 80-DIK

004091

Abstract: IRFZ46Z application note to 25°C, ID = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15 VGS = 10V D Between lead, f f ns f nH 6mm (0.25in.) from , Recovery Charge Forward Turn-On Time 1.3 31 24 p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs à Notes: Repetitive rating; pulse width
International Rectifier
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004091 IRFZ46Z application note
Abstract: °C, ID = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15â"¦ VGS = 10V D Between lead, f f ns f nH 6mm (0.25in.) from package , °C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs Ù Notes:  , , starting TJ = 25°C, L =0.13mH, RG = 25â"¦, IAS = 31A, VGS =10V. Part not recommended for use above this International Rectifier
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Abstract: = 31A VGS = 5.0V, ID = 30A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 31A VDS = 44V VGS = 5.0V VDD = 50V ID = 31A RG = 7.5 â"¦ VGS = 5.0V D Between lead, e e e e e G f , junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs e , Coss Crss VDS= 44V VDS= 28V VDS= 11V 10 8 6 4 2 0 0 1 ID= 31A 10 0 100 International Rectifier
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IRLZ44ZP IRLZ44ZSP IRLZ44ZLP
Abstract: nH pF VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A VGS = 5.0V, ID = 30A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 31A VDS = 44V VGS = 5.0V VDD = 50V ID = 31A RG = 7.5 â"¦ VGS = 5.0V D Between lead, e e e e e G f Source-Drain Ratings , °C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on International Rectifier
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IRLZ44Z IRLZ44ZS IRLZ44ZL

IRLZ44Z

Abstract: IRLZ44ZL °C, ID = 1mA VGS = 10V, ID = 31A VGS = 5.0V, ID = 30A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 31A VDS = 44V VGS = 5.0V VDD = 50V ID = 31A RG = 7.5 VGS = 5.0V D Between lead, e e e , °C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on , 1500 1000 500 Coss ID= 31A VDS= 44V VDS= 28V VDS= 11V 10 8 6 4 2 Crss 0
International Rectifier
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DM marking code

MOSFET IRF 570

Abstract: 035H improved noise immunity. ID 170ns 31A TO-247AC Absolute Maximum Ratings Parameter ID @ TC , TJ = 25°C, IF = 31A TJ = 125°C, di/dt = 100A/µs TJ = 25°C, IS = 31A, VGS = 0V TJ = 125°C, di/dt , ­­­ 7.9 12 A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 31A, VGS , = 19A ID = 31A VDS = 400V VGS = 10V, See Fig. 7 & 15 VDD = 250V ID = 31A RG = 4.3 VGS = 10V , ) Starting TJ = 25°C, L = 1mH, RG = 25, IAS = 31A (See Figure 12). ISD = 31A, di/dt 422A/µs, VDD V(BR
International Rectifier
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IRFP31N50L IRFPE30 MOSFET IRF 570 035H PE30 irf 2030
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