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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP2100EIBT Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil
HIP6601BCBZA-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6605CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

mar 835 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

mar 835 mosfet

Abstract: Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Mar-2013 Rev. A Any , SSE40N20-180P 34A , 200V , RDS(ON) 180 mâ"¦ â"¦ N-Channel Enhancement Mode MOSFET , 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ , width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Mar-2013 Rev. A Any , , RDS(ON) 180 mâ"¦ â"¦ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL
SeCoS
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mar 835 mosfet
Abstract: AOB411L 60V P-Channel MOSFET General Description Product Summary The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This , TC=100°C Rev 0: Mar. 2011 -8 EAS, EAR Avalanche Current C A -55 -230 IDSM , 83.5 ns 37 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR , NOTICE. Rev 0: Mar. 2011 www.aosmd.com Page 2 of 6 AOB411L TYPICAL ELECTRICAL AND THERMAL Alpha & Omega Semiconductor
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AOB411L

Abstract: mar 835 mosfet AOB411L 60V P-Channel MOSFET General Description The AOB411L combines advanced trench MOSFET , °C/W Rev 0: Mar. 2011 www.aosmd.com Page 1 of 6 AOB411L Electrical Characteristics , Reverse Recovery Time VGS=-10V, VDS=-30V, RL=1.5, RGEN=3 IF=-20A, dI/dt=500A/µs 18 110 20 83.5 37 27 , AND RELIABILITY WITHOUT NOTICE. Rev 0: Mar. 2011 www.aosmd.com Page 2 of 6 AOB411L , (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 0: Mar. 2011 www.aosmd.com Page 3 of 6
Alpha & Omega Semiconductor
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Si2399

Abstract: mar 835 mosfet SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The , . Document Number: 67605 S11-0398-Rev. A, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change , - 10 V, VGS = 0 V, f = 1 MHz 834 181 154 9 6 1.7 3.4 835 180 155 10 6.4 1.7 3.4 nC pF VGS(th) RDS(on , -0398-Rev. A, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND , Voltage (V) Note Dots and squares represent measured data. Document Number: 67605 S11-0398-Rev. A, 14-Mar
Vishay Siliconix
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Si2399 2399DS S11-0398-R

mar 835 mosfet

Abstract: 4542 mosfet APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features · , ) D2 (6) N-Channel MOSFET P-Channel MOSFET Systems Ordering and Marking Information Package , . B.1 - Mar., 2005 1 www.anpec.com.tw APM4542K Absolute Maximum Ratings Symbol (TA = 25 , P-Ch ±100 Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Mar , =25V, Frequency=1.0MHz N-Ch 835 P-Ch 950 N-Ch 145 P-Channel VGS=0V, VDS=-25V, Diode
ANPEC Electronics
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STD-020C 4542 mosfet mosfet 4542 apm 1250 ua782 MIL-STD-883D-2003 883D-1005 JESD-22-B 883D-1011

T01A transistor

Abstract: smd transistor device marking p18 Reliability P16 P17 P18 P19 P20 P21 P22 P23 P23 P23 Data Sheet Mar. 25, 2009 15W Single , Vdc Vdc Vdc Vdc A A A A F F F F PXA15-xxSxx 2 Data Sheet Mar. 25, 2009 15W , Typ 86 87 87 88 85 87 87 88 PXA15-xxSxx 3 Data Sheet Mar. 25, 2009 15W Single , ) 80 75 36Vin 24Vin 18Vin 70 65 85.5 85 84.5 84 83.5 60 83 350 700 1050 , Data Sheet Mar. 25, 2009 15W Single Output PXA15-24S05 Characteristic Curves All test
TDK-Lambda
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T01A transistor smd transistor device marking p18 T01A smd transistor p15 smd transistor p16 24S12 PXA15- 24SXX 48SXX XXS05 XXS12 XXS15

mar 835 mosfet

Abstract: marking digital transistor 1006 · · · Inherently Uniform LED Current High Efficiency up to 83.5% No Need for External Schottky Diode , Receivers PDAs, Handheld Computers SOT-23-6 TSOT-23-6 Figure 1. Package Types of AP3029 Mar , Supply Pin. Must be locally bypassed Function Mar. 2009 Rev. 1. 5 2 BCD Semiconductor Manufacturing , in green packages. Mar. 2009 Rev. 1. 5 3 BCD Semiconductor Manufacturing Limited Data Sheet , Voltage Symbol TOP VIN VCTRL Min -40 2.5 Max 85 16 16 Unit o C V V Mar. 2009 Rev. 1. 5 4 BCD
BCD Semiconductor
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marking digital transistor 1006 sot-23-6 led driver Marking Information

lv 5682

Abstract: mar 835 mosfet : J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz , malfunction or mishap. Revision date: 12 /Mar.'02 ATTENTION O B S liK V E P R E C A U T IO N S FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power , DEVICES RD60HUF1 Silicon MOSFET Power Transistor, 520MHz 60W *V gs 3. IKQ fOOQ ·-'M r- vW · C , 0.938 0.938 0.940 0.943 0.946 Silicon MOSFET Power Transistor, 520M Hz 60W ATTENTION OBSERVE
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OCR Scan
lv 5682 TRANSISTOR D 5702 MAS 560 ag MOSFET, 3077 transistor k 2837 S-12V

linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A

Abstract: SISTEM CONTROL internal Power Swithch Power Supply for the MOSFET Switch Table 3: Absolute Maximum Ratings Symbol , 3.00 13.0 43.7 0.95 0.20 L1 0.45 118.1 122.0 83.5 118.1 122.0 51.6 7.9 , Date Revision 11-Nov-2004 08-Feb-2005 1 2 03-Mar-2005 3 10/11 Description of
STMicroelectronics
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ST1S03 linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A SISTEM CONTROL dfn6 DFN 3x3 ST1S03RPM

st1s

Abstract: linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A the internal Power Swithch Power Supply for the MOSFET Switch Power Supply for the Analog Circuit Not , 0.75 MIN. 31.5 0.0 25.6 7.9 16.9 122.0 83.5 122.0 51.6 TYP. MAX. 39.4 2.0 29.5 inch 7387339A 8/13 , History Date 11-Nov-2004 08-Feb-2005 03-Mar-2005 13-Jul-2005 Revision 1 2 3 4 Description of Changes
STMicroelectronics
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st1s
Abstract: SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID , V - 20 RDS(on) () Max. Qg (Typ.) - 50e 93 nC â'¢ TrenchFET® Power MOSFET â , Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM , 0.9 ± 100 -1 - 10 8840 835 900 195 93 12 21 2.6 45 50 140 50 15 5 150 40 TC = , -0200-Rev. A, 12-Mar-12 DWG: 6008 Note â'¢ Millimeters will govern. Revision: 12-Mar-12 1 Document Vishay Siliconix
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SS23DN 1212-8S SS23DN-T1-GE3 2011/65/EU 2002/95/EC JS709A
Abstract: SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID , V - 20 RDS(on) () Max. Qg (Typ.) - 50e 93 nC â'¢ TrenchFET® Power MOSFET â , Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM , 0.9 ± 100 -1 - 10 8840 835 900 195 93 12 21 2.6 45 50 140 50 15 5 150 40 TC = , -0200-Rev. A, 12-Mar-12 DWG: 6008 Note â'¢ Millimeters will govern. Revision: 12-Mar-12 1 Document Vishay Siliconix
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fi1236

Abstract: tuner 3139 147 13251 specification File under BU Tuners, DC03 1996 Mar 19 Philips Components Preliminary specification , MOSFET input stages, with a 3-band mixer-oscillator IC, containing the oscillators, mixers and IF , status can be read via the I2C-bus. 1996 Mar 19 CONNECTOR 2 CHANNELS 55.25 to 160.00 MHz 160.00 to 454.00 MHz 454.00 to 801.25 MHz 1996 Mar 19 AGC LOW BAND MID BAND HIGH BAND , sound output 25 AF sound output 2nd IF sound output - 1996 Mar 19 TH1, TH2, TH3 and
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FI1236MK2 fi1236 tuner 3139 147 13251 Philips 3139 147 3139 147 13251 tuner 3139 147 FI1236MK2/HM/PH FI1236MK2/HM/F COD04

tag 8713

Abstract: fi1236 specification File under BU Tuners, DC03 1996 Mar 19 Philips Components Preliminary specification , MOSFET input stages, with a 3-band mixer-oscillator IC, containing the oscillators, mixers and IF , status can be read via the I2C-bus. 1996 Mar 19 CONNECTOR 2 CHANNELS 55.25 to 160.00 MHz 160.00 to 454.00 MHz 454.00 to 801.25 MHz 1996 Mar 19 AGC LOW BAND MID BAND HIGH BAND , sound output 25 AF sound output 2nd IF sound output - 1996 Mar 19 TH1, TH2, TH3 and
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tag 8713 ADB 444 Philips Analog TV tuner FI1236 3139 147 4020 divider datasheet philips tv tuner 3139 147

3139 147 13291 tuner

Abstract: philips tv tuner 3139 147 13301 specification Supersedes data of 1996 Feb 16 File under Display Components, DC03 1997 Mar 13 Philips , Sound 2 NICAM The tuner section is equipped with 3 tuned RF MOSFET input stages, with a 3 , demodulator (PLL) with an intercarrier SAW filter in front of it. 1997 Mar 13 DESCRIPTION 2 CHANNELS 48.25 to 170.00 MHz 170.00 to 450.00 MHz 450.00 to 855.25 MHz 1997 Mar 13 3 DC - DC , 1997 Mar 13 TH1, TH2, TH3 and TH4 mounting tags (ground) 4 Philips Components
Philips Components
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FI1200MK2 FI1256MK2 COD11 3139 147 13291 tuner philips tv tuner 3139 147 13301 Philips Analog TV tuner FI1216 tuner 3139 147 13291 b fi1216mk2 Fi1216 note FI1216MK2 FI1216MK2/HM/PH FI1216MK2/HM/IEC FI1246MK2
Abstract: Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS , 61249-2-21 Definition â'¢ TrenchFET® Power MOSFET â'¢ 100 % Rg Tested â'¢ Compliant to RoHS Directive , Si2399DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter , VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A Qgd Gate Resistance 835 18 ns Drain-Source , ://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In Vishay Siliconix
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2399DS-T1-GE3

sot-23 MARKING CODE 41B

Abstract: mar 835 mosfet Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES Qg (Typ.) 10 nC MOSFET , ® Power MOSFET · 100 % Rg Tested · Compliant to RoHS Directive 2002/95/EC APPLICATIONS · Load Switch · , Unit °C/W www.vishay.com 1 Si2399DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless , 835 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A VDS = - 10 V, VGS = - , ://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In
Vishay Siliconix
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sot-23 MARKING CODE 41B S11-0239-R

sot-23 MARKING CODE 41B

Abstract: Si2399 Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES Qg (Typ.) 10 nC MOSFET , ® Power MOSFET · 100 % Rg Tested · Compliant to RoHS Directive 2002/95/EC APPLICATIONS · Load Switch · , Unit °C/W www.vishay.com 1 Si2399DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless , 835 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A VDS = - 10 V, VGS = - , ://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In
Vishay Siliconix
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s67b

Abstract: marking S67B LM5068 controls the external N-Channel MOSFET to provide programmable load current limiting and circuit , to a catastrophic fault, the fast gate pull down circuit will reduce the MOSFET gate voltage and initiate active current limiting. GATE N-Channel MOSFET Gate Drive Output This output is pulled high by a 60 µA current source to turn on the MOSFET. 7 TIMER Timer Input An external , 8.6 0.8 8.55 0.75 0.65 VUVSH (V) 0.7 8.45 VUVS (V) 8.5 8.4 8.35 0.6
Texas Instruments
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s67b marking S67B SNVS254C ISO/TS16949

S67B

Abstract: S69B by the insertion of additional circuit cards. The LM5068 controls the external N-Channel MOSFET to , down circuit will reduce the MOSFET gate voltage and initiate active current limiting. This output is pulled high by a 60 µA current source to turn on the MOSFET. An external capacitor connected to this pin , SENSE Negative Supply Voltage Input Current Sense Input 6 7 GATE TIMER N-Channel MOSFET Gate , Temperature 0.8 0.75 0.7 VUVSH (V) 8.45 0.65 0.6 0.55 0.5 0.45 0.4 -40 VUVS (V) 8.4 8.35 8.3
Texas Instruments
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S69B SNVS254B
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