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TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
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TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
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m7 diode

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m7 diode

Abstract: DIODE M7 bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings , mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes TGL 34-6.8 , , 3) )M7"$96 )M7"$963 )M7"$;94 )M7"$;943 )M7"$69 )M7"$693 )M7"$!91 )M7"$!913 )M7"$1 )M7"$13 )M7"$11 )M7"$113 )M7"$1 )M7"$13 )M7"$17 )M7"$173 )M7"$14 )M7"$143 )M7"$1 )M7"$13 )M7"$16 )M7"$163 )M7"$ )M7"$3 )M7"$ )M7"$3 )M7"$" )M7"$"3 )M7"$; )M7"$;3 )M7"$7 )M7"$73 )M7"$77 )M7"$773 )M7"$7 )M7"$73 )M7"$7! )M7
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m7 diode

Abstract: sma M7 diode M1~M7 1.0A Surface Mount Rectifier Features 1. High current capability 2. Low reverse leakage , 600 V M6 800 V M7 1000 V IFSM 30 A IFAV 1 A Tstg = DC , =25 IR 5 µA TA=100 IR 50 µA VR=4V, f=1MHz CD Diode capacitance 15 pF Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 M1~M7 , current vs. IF ­ Forward current (A) CD ­ Diode capacitance (pF) Number of cycles VR ­ Reverse
Excel Semiconductor
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Abstract: M1~M7 1.0A Surface Mount Rectifier Features 1. High current capability 2. Low reverse leakage , V M5 600 V M6 800 V M7 1000 V IFSM 30 A IFAV 1 A , =1MHz CD Diode capacitance 15 pF Excel Semiconductor www.excel-semi.com FaxBack +86-512-67606917 Rev. 3a, 1-Jun-2004 1/3 M1~M7 IFAV â'" Average forward current (A) IFSM â'" Peak , '" Diode capacitance (pF) Number of cycles VR â'" Reverse voltage (V) VF â'" Forward voltage (V Excel Semiconductor
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m7 diode

Abstract: DIODE M7 - . ' 9 CD Surface mount diode Unidirectional and bidirectional Transient Voltage , ;4 < $ / / & . 4 , 3) )M7"$96 )M7"$963 )M7"$;94 )M7"$;943 )M7"$69 )M7"$693 )M7"$!91 )M7"$!913 )M7"$1 )M7"$13 )M7"$11 )M7"$113 )M7"$1 )M7"$13 )M7"$17 )M7"$173 )M7"$14 )M7"$143 )M7"$1 )M7"$13 )M7"$16 )M7"$163 )M7"$ )M7"$3 )M7"$ )M7"$3 )M7"$" )M7"$"3 )M7"$; )M7"$;3 )M7"$7 )M7"$73 )M7"$77 )M7"$773 )M7"$7 )M7"$73 )M7"$7! )M7"$7!3 )M7"$"7 1
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diode m7 MCC

Abstract: UPD4035C Switch A 1 Open Diode M a trix (Short or Open) As the preset station Keys (M l - M7) and , .7 channels (M l - M7) LW + M W 7 channels (M1 - M7) FM and LW+MW are o f 7 channels independent , o r A lternate S witch : A lternate Switch : Diode M a trix (Short o r Open by Diode , . DESCRIPTION OF KEY MATRIX 2-1. In itia liz a tio n Diode M a trix In itia liz a tio n Diode M a trix is , when a m om entary switch (UP, DOWN, M1 - M7 Switches) is depressed. (1) Switches fo r specifying IF o
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diode M7

Abstract: m7 diode Inverse Diode IF = ­IC Theatsink = 25 / 80 °C IFM = ­ICM Theatsink = 25 / 80 °C; tp = 1 ms AC, 1 min , bridge Case M7 Characteristics Symbol IGBT VCEsat CCHC Cies Coes Cres td(on) tr td(off , 2) Diode VF = VEC VTO rT IRRM Qrr Eoff Rthjh IF = 75 A IF = 100 A Tj = 25 (125) °C Tj , diode Temperature Sensor RTS T = 25 / 125 °C Mechanical Data case to heatsink M1 Case mechanical outline see page B 16 ­ 10 © by SEMIKRON 1000 / 1670 2.5 ­ M7 0698 3.5 +T
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M7 DIODE POLARITY

Abstract: M7 DIODE MARKING Symbol If(rms ) If(av ) Value Per diode RMS forward current Unit 35 A A 5 = 0.5 SOT93 /T 0 2 4 7 Tc=120°C Per diode 15 TOP3I Average forward current Tc=115°C Per diode 15 tp=10m s sinusoidal Per diode 200 Surge non repetitive forward current Tstg , RESISTANCE Parameter Symbol S 0 T 9 3 /T 0 2 4 7 TOP3I Per diode 1.8 ° c /w 1.0 Per diode 2.0 Total Junction to case Unit Total Rth (j-c) Value 1.25 S 0 T 9 3 /T
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m7 diode

Abstract: diode M7 Inverse Diode IF = ­IC Theatsink = 25 / 80 °C IFM = ­ICM Theatsink = 25 / 80 °C; tp = 1 ms AC, 1 min , bridge Case M7 Characteristics Symbol IGBT VCEsat CCHC Cies Coes Cres td(on) tr td(off) tf Eon + Eoff Rthjh Diode 2) VF = VEC VTO rT IRRM Qrr Eoff Rthjh Conditions 1) IC = 100 , = 100 A; Tj = 125 °C VR = ­ 300 V; VGE = 0 V diF/dt = ­ 800 A/µs per diode ­ ­ ­ ­ ­ ­ ­ , mJ ­ 3.0 K/W 0.75 ­ 1000 / 1670 2.5 ­ M7 3.5 · · · Options · also
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diode F8 23

Abstract: E 2 G 9 . ( G % ( 8< & # ( #&J:&8 #& # 7;2 +7M 7" ; ;7; M7 , 2M 2MM #& # 7M 7 ;7 ;7! M7; !7 27 227 27; 2"72 2+7 2;72 2!72 27 373 +7 M7! 3 3+ 3M "2 " + +" ; ;! , 273 " "+ 2 Units 6 # H06 H06 D ' = > 7 G Surface mount diode , (' &? 23&?7 &? 7M &? ;7+ &? M7 &? !72 &? 2 &? 22 &? 2 &? 23 &? 2+ &? 2 &? 2M &? &? &? " &? , Surface mount diode Zener silicon diodes ZMY 1 . ZMY 200 (1,3W) Maximum Power Dissipation: 1,3 W
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MTX70A

Abstract: FF300R12KS4 1200 80 200 3.0 100 800 200 15-35 628 7.80 0.087 115 2500 M7 FAST DIODE MODULE (MZC,MZA,MZK,MZX,MZ) IF , - â'¢=â" 'â'¢â'¢â'¢â'"â'"I Power Modules RTSSÃ"Ã" STANDARD THYRISTOR MODULE 26 STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 ftil-^tH^^i* FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER , SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35 4U&M&B MODULE VERSION OUTLINE 36-38 IGBTM& IGBT MODULE , 125 2500 M6 MTX500A* 500 400-2600 1.65 1500 40 200 3.0 100 800 100 11.0 0.087 125 2500 M7 MTX600A* 600
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ZG300HFL120C2S SKM400GB128DN SKM200GB125DN FF300R12KS4 MTX70A MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC ZG600HFL170C3S ZG800HFL170C3S ZG100HFU60C1S ZG200HFU60C2S ZG50HFU120C1S ZG75HFU120C1S

M7 DO-214AC

Abstract: do-214ac M1 M1 THRU M7 SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES SMA(DO-214AC) The plastic package carries Underwriters , Current @TL = 100°C M3 M4 M5 M6 M7 Unit 50 100 200 400 600 800 1000 , . 3. Mounted on P.C. Board with 8.0mm2 land area. -55 to +150°C °C M1 THRU M7 1.0 0.8 , VOLTAGE, (%) FIG.4 Typical Reverse Characteristics KD Diode
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M7 DO-214AC do-214ac M1 SURFACE MOUNT GENERAL RECTIFIER M7 m1 m7 sma m7 diode M7 RECTIFIER SMA/DO-214AC MIL-STD-750

diode pj 87

Abstract: @E @E @E`a @E`a Q ]:@E0%&J *' Q W &- Diode - Rectifier ?- Q _Z [$ *' Q WZ &-J -.0 WeZ [J , ,2&.0(7-J WZ - M.-%7 Target Data ?Y ?-%7 ?-*/ C eZZ ]I ]]Z ?- Q ]X ;_Z> [$J ?Y Q WXZ [$ ?- Q ]X ;_Z> [$J ?Y Q W_X [$ C C OZ Diode - Inverter, chopper [$ ]_ ;]Z> KW , Diode - Inverter, chopper @E Q ]Z CJ ?Y Q ]X ;WXZ> [$ M *'TIU-VMAPTWXMV?YQWXZ[$VM)QKIZM E Q MP$ M;?1> ?Y Q ]X ;WXZ> [$ M.-%7 Q KZZZM C$JXZ5Â¥JW- WJOX ;WJIX> WJeX ;]JZX> XJe IJX ZJg ;ZJeX> W
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diode pj 87

1T362

Abstract: 1T363 varicap diode drive. 2.0 Charge pump output. Connect a loop filter. 4.3 Crystal connection , formed by externally connecting an LC resonance circuit composed of a varicap diode and inductance. 3 , Pins 21 and 22. Then an LC resonance circuit including a varicap diode is connected between Pins 19 , format) Front bit MSB BU FMT BVH BVL M9 M8 M7 M6 M5 2-1-2 : A-1 Mode (18-bit data format) Front bit MSB BU FMT BVH BVL M8 M7 2-1-3 : A-4 Mode (27-bit data format) Front bit MSB BU FMT BVH BVL M9 M8
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1T362 1T363 2SC2785 tv tuner "30-pin" ALL BAND TV TUNER IC BU100 CXA3185/3186N 350MH 395MH 800MH 845MH 30PIN

japanese transistor reference manual

Abstract: UPD1703C 540 . Seven stations ( . Seven stations ( M1 to to M7 M7 ) Independent preset , : Diode m a trix (shorted or opened b y diode) 6 1.2 K E Y M A T R IX CONNECTIONS A N D SWITCH , alternate switch J L A lternate switch A- Diode m atrix (shorted or opened by diode) Open The preset keys ( M1 to M7 ) and the band selector keys (AM , FM) may be either m om , K. 9 1.3 1.3.1 DESCRIPTION OF KEY M A T R IX In itia liza tio n Diode M a trix The five
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japanese transistor reference manual UPD1703C 540 MPB533AC upb553 2SA733 TK-80 703C-014 PD1703C-014 PB553AC

ALL BAND TV TUNER IC

Abstract: CXA3185N . 0.6 NPN transistor connection for varicap diode drive. 2.0 Charge pump output. Connect a , formed by externally connecting an LC resonance circuit composed of a varicap diode and inductance. 3 , Pins 21 and 22. Then an LC resonance circuit including a varicap diode is connected between Pins 19 , format) Front bit MSB BU FMT BVH BVL M9 M8 M7 M6 M5 2-1-2 : A-1 Mode (18-bit data format) Front bit MSB BU FMT BVH BVL M8 M7 2-1-3 : A-4 Mode (27-bit data format) Front bit MSB BU FMT BVH BVL M9 M8
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CXA3185N tv tuner ic SSOP-30P-L01 SSOP030-P-0056 42/COPPER

A 3120V

Abstract: 205-3CC-DM-1 . Optional LED and protection diode. German Technology Comply with RoHS-Directive 2002/95/EC. Type , ) 2C (DPDT) General quick terminal 3C (TPDT) 2T (DPDT) 3T (TPDT) Designation (provided with) LED Diode & LED LED Diode & LED LED Diode & LED LED Diode & LED LED Diode & LED LED Diode & LED LED Diode & LED LED Diode & LED Enclosure style Dust cover with Dust cover with manual lockable manual 205-2CC , lockable manual - Without special features - Coil parallel with LED - Coil parallel with diode - Coil
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205-3CC-D-1 205-2CC-DM-3 205-3CC-DM-1 205-3CC-DM-3 893-205-2CC-DM-324VD A 3120V dm 0256 3120v 11PIN 205-2CC-D-1 205-2CC-DM-1 205-2CC-D-3 205-3CC-D-3

cxa3085

Abstract: ALL BAND TV TUNER IC diode drive. 2.0 Charge pump output. Connect a loop filter. 4.3 Crystal connection for , composed of a varicap diode and inductance. 3. IF amplifier circuit This circuit amplifies the mixer IF , ) Front bit MSB BU FMT BVH BVL M9 M8 M7 M6 M5 2-1-2 : A-1 Mode (18-bit data format) Front bit MSB BU FMT BVH BVL M8 M7 2-1-3 : A-4 Mode (27-bit data format) Front bit MSB BU FMT BVH BVL M9 M8 M7 X , M8 M7 M6 M5 2-2-2 : A-1 Mode (18-bit data format) Front bit MSB FMT BU BVH BVL M8 M7 2-2-3 : A
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CXA3085AN cxa3085 transistor bu 222 X0640 100MH
Abstract: varicap diode drive. 2.0 Charge pump output. Connect a loop filter. 4.3 Crystal connection , composed of a varicap diode and inductance. 3. IF amplifier circuit This circuit amplifies the mixer IF , follows. 2-1-1 : A-0/A-2/A-3 Modes (19-bit data format) Front bit âMSB BU FMT BVH BVL M9 M8 M7 M6 M5 2-1-2 : A-1 Mode (18-bit data format) Front bit âMSB BU FMT BVH BVL M8 M7 2-1-3 : A-4 Mode (27-bit data format) Front bit âMSB BU FMT BVH BVL M9 M8 M7 X CP T1 CD X R1 R0 M6 M6 X M5 Sony
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ME200605

Abstract: MB11A02 POlilEREX INC TÏ de 1 75^4^51 ODlfl3t 4 T D Three Phase Bridge Diode Modules Idc @ Tc (Amps) (°C) Vrrh (Volts) Ifsm (Amps) trr (typical) (¡¿sec) VlSOL (Vrus) Package Type No. ME10 20_ 97_ 800_350_ -_ 2000_ ME4_ ME400802 20_ 107 800 , _ M-7_ ME701204" 40_ 700_ 7600_400_ -_ 2500_ M-7 , |[|i|i|[|¡|¡|[| B-04 0121 109 POlúEREX INC Thyristor and Diode Modules
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ME100603 ME101203 ME602003 ME200605 MB11A02 CE720802 three phase bridge diode ME700802 ME400803 ME700803 ME101603

IRF 945

Abstract: Equivalent of IRF 640 transistor connection for varicap diode drive. 28 CPO 2.0 Charge pump output. Connect a loop , circuit composed of a varicap diode and inductance. 3. IF amplifier circuit This circuit amplifies the , -3 Modes (19-bit data format) S1 SO A-1 Mode (18-bit data format) SO BU FMT BVH BVL Front bit 2-1 -3 : Front bit BU X A-4 Mode (27-bit data format)
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IRF 945 Equivalent of IRF 640 irf 640 equivalent 847MH 42/CO
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