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m27256 Datasheet

Part Manufacturer Description PDF Type
M27256 Intersil 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET Original
M27256 STMicroelectronics NND - NMOS 256 KBIT (32KB X8) UV EPROM Original
M27256 STMicroelectronics NMOS 256K (32K x 8) UV EPROM Original
M27256 WSI EPROM CROSS REFERENCE GUIDE Original
M27256 Intel 256K(32K x 8) UV ERASABLE PROM Scan
M27256 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
M27256-1F1 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-1F1 STMicroelectronics NMOS 256K 32K x 8 UV EPROM Original
M27256-1F6 STMicroelectronics NMOS 256K 32K x 8 UV EPROM Original
M27256-1F6 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-20 Intel 256K(32K x 8) UV ERASABLE PROM Scan
M27256-20F1 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-20F1 STMicroelectronics NMOS 256K 32K x 8 UV EPROM Original
M27256-20F6 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-20F6 STMicroelectronics NMOS 256K 32K x 8 UV EPROM Original
M27256-25 Intel 256K(32K x 8) UV ERASABLE PROM Scan
M27256-25F1 SGS-Thomson EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-25F1 STMicroelectronics NMOS 512K 64K x 8 UV EPROM Original
M27256-25F1 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
M27256-25F6 STMicroelectronics EPROM, 256Kbit Density, Parallel, UV Reprogramability Original
Showing first 20 results.

m27256

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: the parallel M27256 may be common. ATTLlow pulse applied to a M27256's E input, with Vpp_= 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify , when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device outputs , Æ T SG S-T H O M SO N *7#® !W^(Q)IOE(g7[ÎM0(g§ M27256 NMOS 256K (32K x 8) UV EPROM FAST -
OCR Scan
AO-A14 VA00767B FDIP28W
Abstract: : M27256-2F1 ^ M27256F1 ^ M27256-3F1/ M27256-4F1 ^ A0-A14 CE OE 00-07 M27256-25F1 M27256-30F1 M27256-45F1 M27256F6 M27256-4F6 y pin connections pin names ADDRESS INPUT CHIP ENABLE INPUT OUTPUT ENABLE INPUT , ACCESS TIME: 200ns MAX M27256-2F1 250ns MAX M27256F1/M27256F6/M27256-25F1 ' 300ns MAX M27256-3F1/M27256-30F1 450ns MAX M27256-4F1/M27256-4F6/M27256-45F1 0 to 70°C STANDARD TEMPERATURE RANGE -40 to +85°C EXTENDED , the parallel M27256 may be common. A TTL low pulse applied to a M27256's CET input, with Vpp at 12.5V -
OCR Scan
Z8000 m27256 sgs 27256-2 30F1 27256 eprom 27256-45 M27256F1/M27256F6/M27256-25F1 M27256-3F1/M27256-30F1 M27256-4F1/M27256-4F6/M27256-45F1
Abstract: may be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO , when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device , M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 170ns s STMicroelectronics
Original
1N914 M27256A AI00767B
Abstract: (including G) of the parallel M27256 may be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being , temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be , M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 170ns s STMicroelectronics
Original
Abstract: applied to a M27256's E input, with Vpp_= 12.5V, will program that M27256. A high level E input inhibits , temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be , PROGRAMMING VOLTAGE: 12V DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic -
OCR Scan
c1237 ha mm27256
Abstract: to a M27256's E input, with Vpp_= 12.5V, will program that M 2 7 2 5 6 . A high level E input , required when programming the M27256. To activate this mode, the programming equipment must force 11,5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device , r Z J SGS-THOMSON M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED , M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 -
OCR Scan
IP28W
Abstract: ) Symbol Parameter M27256-20 M27256-25 M27256-35 Units Comments Min Max Min Max Min Max *ACC , implementation of new, advanced systems with firmware Intensive architectures. The combination of the M27256's , , high-performance systems. The M27256's large storage capability of 32K bytes enables it to function as a high , the de- Programming Caution: Exceeding 13.0V on pin 1 (VPP) will permanently damage the M27256. , 12.5V will program the selected M27256. Verify A verify should be performed on the programmed bits to -
OCR Scan
M80186 M8051 DS-12
Abstract: M27256 NMOS 256K (32K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED , (F) DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic , programming procedure. Logic Diagram VCC VPP 15 8 A0-A14 E Q0-Q7 M27256 G , M27256 DIP Pin Connections Signal Names A0 - A14 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 STMicroelectronics
Original
B27256/503 AI00768
Abstract: Part Number 7 ^ 2 3 7 002735^ 0 â  S G S-THOMSON Access Time M27256-1F1 M27256-2F1 M27256F1 M27256-3F1 r M27256-4F1 M27256-20F1 M27256-25F1 M27256-30F1 M27256-45F1 M27256F6 M27256-4F6 , MAX MAX MAX MAX MAX M27256-1F1 M27256-2F1/M27256-20F1 M27256F1/M27256F6/M27256-25F1 M27256-3F1/M27256-30F1 M27256-4F1/M27256-4F6/M27256-45F1 â  â  â  â  * â  0 to + 7 0 °C STANDARD , ) of the parallel M27256 may be common. A TTL low pulse applied to a M27256â'™s CE input, with V pp -
OCR Scan
D02735D M27256-2F1/M27256-20F1 DIP-28 28-PIN
Abstract: be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO , functionalin the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE STMicroelectronics
Original
thomson 7895
Abstract: . CHARACTERISTICS (Over Specified Operating Conditions) Symbol Parameter M27256-20 M27256-25 M27256-35 Units , implementation of new, advanced systems with firmware intensive architectures. The combination of the M27256's , , high-performance systems. The M27256's large storage capability of 32K bytes enables it to function as a high , applied to the CE input with Vpp at 12.5V will program the selected M27256. Verify A verify should be , the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate -
OCR Scan
Abstract: rZ 7 SCS-THOMSON 9/11 71 M27256 ORDERING INFORMATION - UV EPROM Part Number M27256-1F1 M27256-2F1 M27256F1 M27256-3F1 M27256-4F1 M27256-20F1 M27256-25F1 M27256-30F1 M27256-45F1 M27256F6 M27256-4F6 , pulse ap plied to a M27256's CE input, with Vpp at 12.5V, will program that M27256. A high level CE , M27256. When delivered, (and after each erasure for UV EPROM), all bits of the M27256 are in the "1" , in the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To acti -
OCR Scan
VR000536 ST27256-20CP ST27256-25CP DIP28
Abstract: (including G) of the parallel M27256 may be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being , is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from , M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 170ns EXTENDED STMicroelectronics
Original
LABLES INFORMATION
Abstract: M27256 NMOS 256K (32K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE , The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housedin a 28 pin Window Ceramic Frit-Seal Dual-in-Line package , Diagram VCC VPP 15 A0-A14 8 Q0-Q7 E G M27256 VSS AI00767B B27256/503 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27256 DIP Pin Connections STMicroelectronics
Original
170NS
Abstract: common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A , functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE , DESCRIPTION The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is STMicroelectronics
Original
Abstract: ) Test Conditions M27256-25 M27256-30 Min. Max. Min. Max. tacc Address to Data Valid 250~" , using a 12.5V intelligent algorithm. The M27256's operating conditions are specified over the -55 to , M27256's low active power is achieved without sacrificing performance. The access time is 250 nsec, making , Respective Manufacturer M27256 An intelligent algorithm is used to program the M27256. Data is programmed , algorithm for the M27256. Absolute Maximum Ratings Temperature Storage . -65° C to -
OCR Scan
27C256 M272256-25 272S6 28-LEAD
Abstract: be common. A TTL low pulse applied to a M27256's E input, with VPP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed. Program Verify NO , functionalin the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. , M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE STMicroelectronics
Original
Abstract: M27256 256 Kbit (32Kb x 8) NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 170ns EXTENDED , M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package , M27256 Address Inputs Q0-Q7 Q0-Q7 Ground G B27256/804 Complete data available on DATA-on-DISC CD-ROM or at www.st.com VSS AI00767B 1/2 M27256 DIP Pin Connections Ordering STMicroelectronics
Original
FDIP28Wf
Abstract: G) of the parallel M27256 may be common. ATTL low pulse applied to a M27256's E input, with Vpp_= 12.5V, will program that M27256. A high level E input inhibits the other M27256sfrom being programmed , required when programming the M27256. To activate this mode, the programming equipment must force 11,5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device , 5 7 . SGS-THOMSON LI M27256 NMOS 256K (32K x 8) UV EPROM FAST ACCESS TIME: 170ns -
OCR Scan
Abstract: 27256â'™s E input, with Vpp_= 12.5V, will program that M27256. A high level E input inhibits the other , functional in the 25°C ± 5°C am bient tem perature range that is required when programm ing the M27256. , the M27256. Two identifier bytes m ay then be sequenced from the device outputs by toggling address , ¿ = 7 SGS-THOMSON M27256 NMOS 256K (32K x 8) UV EPROM â  FAST ACC ESS TIM E: 170ns â , Supply Vcc Supply Voltage Vss Ground VA00767 March 1992 229 M27256 Table 2 -
OCR Scan
Abstract: SCS-THOMSON M27256 ite 256K (32K x 8) NMOS UV EPROM - OTP ROM â  FAST ACCESS TIME : 170 ns , T EN ABLE INPUT 0 0 -0 7 D ATA IN PU T/O U TPU T A ugust 1990 1/11 63 M27256 , be Vm o r V u â'¢ V H = 12V ± 0 .5 V 2/11 64 gÿj SGS-THOMSON M27256 READ OPERATIO N , . SGS-THOMSON 3/11 65 M27256 READ OPERATIO N (Continued) AC TEST CONDITION S Input Rise and Fall , d fro m O E o r C E w h ic h e v e r o ccu rs firs t. SGS-THOMSON M27256 DEVICE OPERATIO N -
OCR Scan
0-A14 ST27256-20C ST27256-25C
Showing first 20 results.