| Fulltext Datasheet Results |
1 - 50 of about 142 for m 8841 |
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First line: SUM85N03-07P_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Abstract: .. CF2 N/A 5.3520 m N/A. CF3 N/A 44.8841 m N/A. CF4 N/A 238.6492 m N/A. Document Number: 69782 Revision: 16-Oct-07 16-Oct-07 . www.vishay.com 3. Vishay Siliconix. SUM85N03-07P SUM85N03-07P _RC. .. Tags: C 6492 7717 SUM85N03-07P RC |
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First line: Replaces Potentiometers Operates From Single Supply 2-Quadrant Multiplying Bandwidth Signal Inversion Eight Individual Channels 3-Wire Serial Input Update Data Loading Rate Abstract: .. Octal, 2-Quadrant Multiplying, CMOS TrimDAC DAC-8841 FUNCTIONAL BLOCK DIAGRAM The DAC-8841 .. V, Sets D = 80h 10 M-V/ C SIGNAL INPUTS Applies to All Inputs VINX or VREFL Input Voltage Range IVR .. Tags: datasheet abstract.. |
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First line: dependence oscillating characteristics UPD78P0018YGF Room Temp. FCR4.0MC5 (item a-e) V1H/V1L va^vzL Ufb] Fote CuS] Trfse Duty Vstart Vhold 4.8844 58.3 1.62 1.31 4.884 58.7 1.89 1.51 4.884 51.1 1.93 1.58 4.8841 49.8 1.93 1.59 4.8834 58.8 2.25 1.76 Abstract: .. 5.4 4.884 218 51.1 1.93 1.58 I i m 4.8841 178 49.8 1.93 1.59 m 5.3 -A 4.8834 ] 288 . „ i . __J 58.8 2.25 1.76 *\>J.T DnmZ. IC NO. HHM-gfil^-ro UPD78P0818YGF UPD78P0818YGF - HHM FCR4.0MC5 Ta 20 CdegJ Typical .. Tags: datasheet abstract.. |
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First line: B128 M34570M4 U1H/U1L Typical lilnrfst._ FCR3.84MC5 [deg] J_I_I_I_I_L- Abstract: .. 3 -.5 m 300 200 100 0 60 55 50 45 40 g. U1H/U1L EU] g-0 Typical  ---- lilnrfst._ FCR3.84MC5 84MC5 Ta .. 8847 -.8841 -.8849 -.8844 -.8848 -.8845 -.8858 -.8844 -.8845 .8883 unit: HHz M34578M4 M34578M4 - I .. Tags: B128 datasheet abstract.. |
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First line: dependence oscillating characteristics GMS34012 Room Temp. FCR3.84MC5 (item a-e) item NO^v V1H/V1L V2H/V2L [MHz] Fosc CuS] Trise Duty Vstart Vhold 3.798 50.4 1.51 1.32 3.798 51.1 1.52 1.32 3.7985 49.8 1.56 1.27 3.7989 1.63 1.34 Abstract: .. ^ 1 Duty CXI m 49.3 49.1 49.9 59.7 -JSf8 * †f †i 1 i ■i i i f. Vetart CV3  ■■- : 1.96 JJ 1.99 1.6 .. .8841 .8842 .8884 unit : MHz 0634812 - T2 3.83 Y-fHBiX fl- .85172457 B- .88464896 F- 1824 .. Tags: datasheet abstract.. |
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First line: THL-55 CXP824P40RQ-1 FCR4.19MC5 Cdeg] V2H/V2L Fose Abstract: .. Duty tHl 55 50 45 40   I 51.4 M.7 51.7 SI -J_I_I_I_I-1-1_I_I_I-1_I_I_L_l-1-1_l_ 4 f. Vstart .. .1957 .8841 18 4.2886 4.1959 .8847 4.1918 4.1872 .8847 EV. †8869 .8869 †8884 C unit s Ifli .. Tags: THL-55 datasheet abstract.. |
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First line: INVERTER Vout CHARACTERISTICS M381Q2M4 Vout INVERTER GAIN/PHASE FREQUENCY CHARACTERISTICS M3812M4 Phase Cdeg] Abstract: .. CdB] 40 30 20 10 0 -10 -20 -30 -40 Ft - 9.3 CMHz] P.M - 110.9 Cdeg] —> 0 CdB] 1 1 1 1 1 II 1 .__Pha_se MA ^ .. .8837 .8841 .8887 unit : MHz H38182H4 H38182H4 - 1 3.59 3.55 Y-fl+B X A- .32612217 B- .98501688 F .. Tags: datasheet abstract.. |
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First line: KS51840.03 CMohm] FCR4.0MC5 Cdeg] V1H/V1L Typical Worst Fosc 1*41 Abstract: .. 815 8 -.848 †m m m i i t i i i i i i i i 1 1 1 † - d. Trise CuS3 - 96 88 128 - - ■i i i i i i ††i i i  i .. 4.8841 -78.65. -9.99 8 8 8. [R] 48. 188. -.,.m '""' -a. c. 8. 8. -,. -a. '""' ., D ~ :3 if. -48. 2. 3. 4. 5. 18. 28. 38. 48 58 .. Tags: datasheet abstract.. |
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First line: 94 5 dependence oscillating characteristics uPD17202RGF Room Temp. FCR4.0M5 (item a-e) CL1/CL2 CpF3 N0\ V1H/V1L V2H/V2L CNHz] Fotc CuS] Trite Duty Vstart Vhold 3.9765 58.4 3.9771 58.4 3.977 58.5 1.86 3.977 58.3 1.11 Abstract: .. —1—r- " T • ■ ■ ■ PI* Vhold m 1.24 1.19 i i 1 1 I —r- 1.15 1.1 1.16 f-tU__L__1.. -80 -60 -40 -20 .. 8841 -.8841 -.8843 -.8844 -.8846 -.8844 -.8845 ._4 unit : ttHz uPD172B2AGr uPD172B2AGr - 9B7 4 I I I. Y-A .. Tags: 94 5 datasheet abstract.. |
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First line: lzl 60 c M34225M2FP FCR4.0MC5 [deg] Typical V1H/V1L iTmmi Abstract: .. 4.8886 -.8841 4 4.8821 4.8847 -.8826 5 3.9988 3.9998 -.8818 6 4.8882 4.8835 -.8833 7 3.9929 3 .. ] LPM Cdeg] [B] 12.46 12.33 4.0047 -70.33 CC] -13.04 0 0 0 [fl] m ia J7 40 -40 1 III 1 I I..T " CB .. Tags: lzl 60 c datasheet abstract.. |
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First line: MNI0IC527 FCR4.0MC5 Edeg] U1H/U1L Typical *----* Uorst U2H/U2L Abstract: .. -.3 -.5 m m 200 lee 0 60 55 50 45 40 MNI0IC527 MNI0IC527 - 1 FCR4.0MC5 Ta= 20 Edeg] a. U1H/U1L EU] g-0 Typical .. 38.69 38.63 4.8841 -76.49. -.85 8 8. 43.78 188. [Al ~ 48 Tai ri' ------ ---- Phase. [B] [C] 8. '8 ~ < 8. .r .. Tags: datasheet abstract.. |
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First line: M38C33M FCR8.0MC5 [deg] U1H/U1L Typical Uorst_ J_I_l_ U2H/U2L Fosc Abstract: .. 3 -.5 m 300 200 100 0 60 55 50 45 40 - U2H 4.9 4.9 4.9 5 4.9 - - - U2L i i .7 .7 .5 .4 .4 : 1 l 1 l 1 â– i l l l l l l l l c .. 8,8849 7,9918 7,9895 8,8211 8,8841 ,8146. [Bl TOK 5tandard 8,8346 8,8886 8,8321 7,9968 7,9983 8 .. Tags: datasheet abstract.. |
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First line: dependence oscillating characteristics uPD750068GT Room Temp. FCR3.58MC5 (Item a~e) \ltwi HON. V1H/V1L V2H/V2L [HHz] Fosc CuS] Trice Duty Vitart Vhold CU-3 3.5765 51.4 1.89 1.89 CU-17 3.5764 1.25 CU-9 3.5765 58.6 1.32 CU-5 3.5765 58.8 1.49 1.47 CU-21 3.5762 58.4 1.52 1.52 Abstract: .. Duty U3_ 5s i : S0 ; 49.8__49.8__58.2__ M__; 45 - - 40 C—i—i—i—iâ .. 8841. [Il TDK .tandard 3.5828 3.5718 3.5888 3.58. 3.5838 3.5848 3.5818 3.5818 3.5818 3.5878 3 .. Tags: datasheet abstract.. |
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First line: 8853 TMP47P202VP FCR4.0MC5 Cdeg] Typical V1H/V1L Worst -I_t_I_I I_I_I_u V2H/V2L Abstract: .. 113 .US ††m * * 1 ■† f t i 1 i i †■i i i > i , - d. Trise CuS] †78 71 64 72 j i t †f f > i †1 1 i .. 8841 2 3.9874 3.9912 -.8838 3 4.8821 4.8886 -†H65 4 3.9995 4.8847 -.8852 5 3.9968 3.9998 .. Tags: 8853 datasheet abstract.. |
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First line: M34282M1 FCR3.64MC5 [deg] U1H/U1L Typical Uorst_ Abstract: .. -.3 -.5 m 300 200 100 0 60 55 50 45 40 4 3 2 ; 3 2 U2H 3.2 ---X---- 3.2 ----X--- 3.2 ----X---- 3.2 : ----X .. 8836 -.8843 -.8842 -.8843 -.8843 -.8841 -.8839 -.8843 -.8843 -.8832 -.8848 .8884 unit .. Tags: datasheet abstract.. |
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First line: mn15828* MN150205 FCR4.0MC5 CdegJ Typical VIH/VIL Horst V2H/V2L -I-1-I-l_ Abstract: .. Vstart m Typical  1.95 Horst - 2.08 g. Vhold m Typical - 1.95 Horst "2.04 Power supply voltige .. 8841 2 3.9874 3.9912 -.8838 3 4.8818 4.8886 -†0068 4 3.9993 4.8847 -.8854 5 3.9958 3.9998 â .. Tags: mn15828* datasheet abstract.. |
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First line: M38507F8AFP UIH/U1L FCR4.0MC5 [deg] Typi Worst _l_I_V"-' U1L, Abstract: .. ] 40 -40 i i i i i ili †Phase [B] [C] ■r i \ r i ili I III 3 4 5 10 180 m B TJ  0 20 30 40 50 -180 [B] 40 -40 1 1 1 .. 4,88111 ,8889 [A] - [B] -,8834 -,8825 -,8828 -,8834 -,8834 -,8834 -,8812 -,8834 -,8835 -,8841 .. Tags: datasheet abstract.. |
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First line: ei 306 20 64 dependence character uPDI7246MC Room Temp. FCR3.84MC5-S (item a~e) item UIH/UIL U2H/U2L [MHz] Fosc [uS] Trise Duty Ustart Uhold 3.8384 43.6 3.8392 44.5 3.8383 43.5 1.01 1.01 3.8399 44.9 1.02 1.01 3.8399 1.07 1.06 Abstract: .. 3 -.5 m 300 200 100 0 60 55 50 45 40 - U2H 2.1 2.1 2.1 1.1 2.1 - - U2L â– i 0 0 0 .1 0 : 1 â– 1 l l l l l l l l l l l l l l c .. 8841 [Bl TDK standard 3.8974 3.8139 3.8145 3.8846 3.8B17 8B17 3.8128 3.8172 3.8189 3.8156 3.8125 3 .. Tags: ei 306 20 64 datasheet abstract.. |
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First line: MB58X FCR4.I9MC5 Cdeg] Typical VIH/VIL Worst YlLi V2H/V2L Fose C3J] Abstract: .. t > \ V N 1  V 1 \ \ \ i ^ \ > m > ..1 1 1 1 -1-- 180 4.4 -180 CC3 40 -40 †- -râ .. 8845 -.8848 -.8858 -.8851 -.8854 -.8849 -.8842 -.8844 -.8841 -.8847 -.8847 .8884 unit .. Tags: datasheet abstract.. |
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First line: dependence oscillating characteristics M34282E2GP Room Temp. FCR4.0MC5 (item a~e) item N0\ UIH/UIL U2H/U2L [MHz] Fosc [uS] Trise Duty Ustart Uhold 4.0008 49.4 1.08 1.05 4.0004 1.32 1.19 4.0009 51.3 1.53 1.36 M34282E2GP Abstract: .. .2 -180 [C] 40 180 -180 12.4 Open loop characteristics Tup i cal Sample m] 40 M34282E2GP M34282E2GP - HH EB .. 25.39 25.37 4.8841 -86.95. -7.73 8 8. 21.34 188. [Al ~ 48 Phase -------------Gain 8 [B] [e] '8 ~ ---r .. Tags: datasheet abstract.. |
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First line: quad resistor 470 ohm Fairchild Family Product Line Card Solutions Abstract: .. Feature Designation M Bushold Inputs P Pulldown Resistors on Inputs R Series on A and B Side .. -3-3818-8840 Fax: 81-3-3818-8841. Osaka Office Fairchild Semiconductor Shin-Osaka-Meiko .. Tags: quad resistor 470 ohm datasheet abstract.. |
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First line: MB89475 FCR4.0MC5 [deg] UIH/UIL Typi Uorst j_._iMLi."- Abstract: .. " Phase i i i [B] i [C] i i i Ga i n †\ \ / ' \ i i i i i iii 3 4 5 10 180 m B TJ  0 20 30 40 50 -180 [B] 40 -40 1 1 1 1 | 1 .. 8846 -.8847 -.8843 -.8844 -.8843 -.8841 -.8844 -.8844 .88B2 88B2 unit: MHz H889475 H889475 - I 4.04 I I .. Tags: datasheet abstract.. |
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First line: INVERTER Vout CHRRflCTERISTICS BU3451R-1 Vout --------- i_(------- ------- --------- Abstract: .. 8834 -.8829 -.8858 -.8844 -.8832 -.8046 -.8845 -.8846 -.0838 -.8042 -.8841 ■TMt —1 unit .. ] 19.81 0 FIGM CMHzl 4.0121 0 LPH [deg] -75.12 0 ER3 CD -O n o 180 — 0 fi O tu -o I M ta -180 40 50 [3] 40 .. Tags: datasheet abstract.. |
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First line: zjy-4 FM809/810 3-Pin Supervisor Circuits FM809/810 3-Pin Supervisor Circuits Abstract: .. VCC = 5V for FM8xxL/M/J, VCC = 3.3V for FM8xxT/S and VCC = 3V for FM8xxR. Limits over temperature .. Italiano Tel: +39 0 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841. Physical .. Tags: zjy-4 FM809 810 |
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First line: PHIN DEVELOPMENT DATA This data sheet contains advance information specifications subject change without notice. PHILIPS INTERNATIONAL ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes ISOTOP envelopes, featuring forward voltage drop, ultra fast Abstract: .. ÃŽ t t M 3 03 8 max Vc ^ 7\ 'FRM. time M1246 M1246 Definition of I frm and tp/T. 0.5 1.5 VF V 2.5 Fig.6---Tj .. & 1]18626 8841 BJ 4@b APAIN M3037 M3037 . .. .. IFRM A '" i"'!, '"'" IZ. ~ " " ~ 10. o ..I W. 0-. w :E .. Tags: datasheet abstract.. |
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First line: PAIRCHILD EMICDNDUCTDRTM FM93C46 K-Bit Serial CMOS EEPROM Interface) FM93C46 device 1024 bits CMOS non-volatile electrically erasable memory organized 64x16 array. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. These mem Abstract: .. 0 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841 CD CO o J* o> 7s I n ü" W <D W O S o fi m m -o u O O u O 3D m H 3 00 c co D fi o D Fairchild does not assume any responsibility tor use ot any circuitry described .. Tags: datasheet abstract.. |
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First line: FAIRCHII-D SEMICONDUCTOR FM93C66 4K-Bit Serial CMOS EEPROM Interface) FM93C66 device 4096 bits CMOS non-volatile electrically erasable memory organized 256x16 array. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. These m Abstract: .. 0 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841 CD CO 0 o> o> J* Tv 1 n ü" w <D w O S o fi m m -o u O O u O 3D m H 3 00 c co D fi o D Fairchild does not assume any responsibility tor use ot any circuitry .. Tags: datasheet abstract.. |
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First line: FAIRCHII-D SEMICONDUCTOR FM93C56 2K-Bit Serial CMOS EEPROM Interface) FM93C56 device 2048 bits CMOS non-volatile electrically erasable memory organized 128x16 array. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. These m Abstract: .. 0 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841 CD CO 0 01 o> IO Tv I n ü" w <D W O S o fi m m -o u O O u O 3D m H 3 00 c co <D fi o <D Fairchild does not assume any responsibility tor use ot any circuitry .. Tags: datasheet abstract.. |
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First line: PAIRCHILD EMICONDUCTTZIRTM NM93C06 256-Bit Serial CMOS EEPROM Interface) NM93C06 devices bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. T Abstract: .. WEN -Si- tes 1 \ o 0/1 1 WDS 1 \ 0 0 0 0 / X CO Cd O o o ro cn o ■ OJ CO CD M o s o CO T3 J3 O O J3 O 00 c / 5" l-H CD 0 o CD .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: FAIRCHILD EMICQNDUCTDRtm NM93C56 2K-Bit Serial CMOS EEPROM Interface) NM93C56 devices 2048 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. Abstract: .. CS = VIL 100 ns tWP Write Cycle Time 10 ms CO Cd o cn 0 ro * 1 ro co CD M o s o CO -o J3 O O 30 O 00 c / CD 3. 0 o CD .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: FAIRCHILD EMICQNDUCTDRtm NM93C66 4K-Bit Serial CMOS EEPROM Interface) NM93C66 devices 4096 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. Abstract: .. 1 \ 0 0 0 / 1 /DON'T CARETS BITS \ D15 ; -V BUSY-"twp "" ERASE ERAL co Cd O o 0 1 ro CO D M o s o co T3 3D O O 30 O .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: PAIRCHII_D EMICONDUCTDRtm NM93C66 4096-Bit Serial EEPROM Interface) NM93C66 devices 4096 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. T Abstract: .. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. m ;::::;: en I 0;" ~ Features Device status during programming mode Typical active current of .. Tags: datasheet abstract.. |
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First line: FAIRCHILD EMICQNDUCTDRtm NM93C56 2048-Bit Serial EEPROM Interface) NM93C56 devices 2048 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. Th Abstract: .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. m ;::::;: en I 0;" ~ Features Device status during programming mode Typical active current of .. Tags: datasheet abstract.. |
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First line: PAIRCHILD emiconducttzirtm NM93C06 256-Bit Serial EEPROM Interface) NM93C06 devices bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption. These Abstract: .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. m tn :::l 'I Block Diagram cs--------------------------~~--~IN=S=T=R~U~C=T~IO~N~~ SK .. Tags: datasheet abstract.. |
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First line: PAIRCHILD emiconducttzirtm NM93C46 1024-Bit Serial EEPROM Interface) NM93C46 devices 1024 bits CMOS non-volatile electrically erasable memory divided into 6416-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumption Abstract: .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. m ;::::;: en I 0;" ~ Features Device status during programming mode Typical active current of .. Tags: datasheet abstract.. |
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First line: PAIRCHILD EMICONDUCTTZIRTM NM93C46 K-Bit Serial CMOS EEPROM Interface) NM93C46 devices 1024 bits CMOS non-volatile electrically erasable memory divided into 6416-bit registers. They fabricated using Fairchild Semiconductor's floating-gate CMOS process high reliability, high endurance power consumpti Abstract: .. 0 / X CO Cd O O I OJ CO CD M o s o CO T3 3D O O 30 O 00 c / CD 3. 0 o CD 6 www.fairchildsemi.com NM93C46 NM93C46 Rev. C .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTDRtm NM95MS14 Plug Play Front-End Devices ISA-Bus Systems NM95MS14 smaller family devices designed provide complete Plug Play Capability systems. NM95MS14 includes necessary state machine logic manage Plug Play protocol addition switches steering Interrupt requests. also features built-in Abstract: .. 2 J SD 7 ] SD 6 ] SD 5 ] SD4 ] SD3 ] SD2 ] SD1 ] SDO ] ose ] AEN M M M M M S M M M < Order Number NM95MS14VBH NM95MS14VBH Signals .. : +852-2722-8383 Fax: 81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: om 8383 SEMICONDUCTOR NM95MS16 Plug Play Front-End Devices ISA-BUS Systems NM95MS16 smaller family devices designed provide complete Plug Play Capability systems. NM95MS16 includes necessary state machine logic manage Plug Play protocol addition switches steering Interrupt requests. also features bu Abstract: .. NM95MS16 NM95MS16 TQFP 25 26 27 28 29 30 31 32 33 34 35 UU 3 m to r-> co o <<Z<<<<< Order Number NM95MS16VBH NM95MS16VBH g .. 2-18-6, Yushlma, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. Tags: om 8383 datasheet abstract.. |
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First line: pinout E1000 SEMICONDUCTDRtm FM27LV010L 1,048,576-Bit Voltage, Power EPROM FM27LV010 low-power 1Mbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K words with bits word. byte accessed less than 150ns, eliminating need WAIT states high-performance microprocessor Abstract: .. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. m ;::::;: .. CO. I\ -CO. >< " ro. < Features Read Access Time: 150ns 150ns Single 3.3V Power Supply Low .. Tags: pinout E1000 datasheet abstract.. |
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First line: SEMICONDUCTDRtm FM27LV512L 524,288-Bit (64Kx8) Voltage, Power EPROM FM27LV512 voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into words with bits word. byte accessed less than 150ns, eliminating need WAIT states high-performance microprocessor s Abstract: .. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. m ;::::;: en -1:=0 .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTORtm NM27LV210 1,048,576-Bit (64K Voltage EPROM NM27LV210 high performance Voltage Electrical Programmable read only memory. manufactured using Fairchild's latest EPROM technology. This technology allows part operate high speeds. This LowVoltageand Power EPROM designed with power sensitiv Abstract: .. INCREMENT ADDRESS n = 0 YES ADDRESS = FIRST LOCATION ro < ro o 00 cn o ■ 00 o X o o € < o l-H 0 Q CD m -a J3 O .. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. Tags: datasheet abstract.. |
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First line: CONDUCTOR NM95MS15 Plug Play Front-End Device ISA-Bus Systems NM95MS15 family single chip solutions designed provide complete Plug Play capability systems. NM95MS15 includes necessary state machine logic manage Plug Play protocol addition switches steering Interrupt requests. also features built-in Abstract: .. 2-18-6, Yushlma, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. m I: en en. IRQOUT8 Note 4 ISAORQO IRQOUT9 Note 4 ISAORQ1 IRQOUT10 IRQOUT10 Note 4 ISAORQ2 NC NC NC .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTDRtm FM27C010L 1,048,576-Bit (128Kx8) Power Fast EPROM FM27C010 low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K words with bits word. byte accessed less than 45ns, eliminating need WAIT states high-performance microprocessor systems. FM27 Abstract: .. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 .. m ;::::;: .. CO. I. I\ Parameter Output High Voltage Output Low Voltage Input High Voltage .. Tags: datasheet abstract.. |
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First line: INVERTER Vout CHRRflCTERISTICS BU3434R-1 Vout INVERTER GfllN/PHRSE FREQUENCY CHRRflCTERISTICS BU3434R-1 Freq. [KHz] INVERTER Vout CHARACTERISTICS BU3434E-1 Vout Abstract: .. -1 - 1 CB] CCD FCR4.0MC5 - Worst Gmax [dB] 17.58 -7.16 Vdd M 5 LGM CdB] 17.58 0 FLGM [MHz] 4.0029 0 LPM .. rOle 4.8841. Trill 72. Duty 49.6 49.2 58 49.8. Vlhrt 1.69 1.91 2.81 2.11 2.2. I---~ A. -.4 -.2 /<~ "7 .. Tags: datasheet abstract.. |
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First line: FAIRCHILD SEMICDNDUCTDRtm NM93CS46 Interface) 1K-Bit Serial EEPROM with Data Protect Sequential Read NM93CS46 devices 1024 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. Selected registers protected against data modification programming Protect Register with addre Abstract: .. i z 1 gg KT W D ^ -g o> cd ö y 3D fi O äi CO cd m ^ 00 S <-H — S Z. m 2 cd q M o cl cd I ro co cd 0 ' T3 3D O 6 www .. : +852-2722-8383 Fax:81-3-3818-8841 Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: PAIRCHII_D EMICONDUCTDRTM NM27C520 524,288-Bit (64K Multiplexed Addresses/Outputs CMOS EPROM Abstract: .. -ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax:81-3-3818-8841 3 ro ofj ■ cn O w co m 5 TJ ^ 2 To O oo : 00 o * X 00 D X CD Q. > Q. Q. CD /> /> CD /> Ò c l-H ■O c l-H /> Fairchild does not assume any responsibility .. Tags: datasheet abstract.. |
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First line: b 58115 INVERTER Vout CHHRflCTERISTICS H37421H6 Vout INVERTER GfllN/PHRSE FREQUENCY CHHRflCTERISTICS M37421H6 32.6 [MHz] 108.1 [deg] CdB] Freq. [MHz] M37421M6 CL1/CL2 CpF] FCR3.58M5 CMohm] Vdd- (Flg.a-d) Abstract: .. _I—_I__I_J_ 300 zee lee e ee e* Duty 55 se 45 4e 78 7 75 7js 77 75 75 47 6 m 9 48.9 43.3 48.5 49_ .2 .. .8839 .8841 †0006 unit : MHz M37421M6 M37421M6 - 1 3.6 Y-fl+WX fl- .13331882 B- .96879676 F- 384 .. Tags: b 58115 datasheet abstract.. |
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First line: INVERTER Vout CHHRHCTERISTICS M58959 Vout INVERTER GRIN/PHHSE FREQUENCY CHRRflCTERISTICS HSB9S9 Gain [dB] 33.6 [MHz] Cdeg] CdB] Phase Cdeg] MS0959 CL1/CL2 CpFD CMohm] VUVV1L FCR3.58M5 Vdd= (Fig.a~d) Cdeg] Abstract: .. /PHHSE vs. FREQUENCY CHRRflCTERISTICS >> IC : HSB9S9 Vdd : 5 [V] Gain [dB] Ft = 33.6 [MHz] P.M - 117 .. .8838 .8841 .8887 unit : Ufa M58959 M58959 - 1 3.62 3.S4 3.56 3.58 3.6 TDK standard Y-fHB*X R .. Tags: datasheet abstract.. |
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First line: II-D NM93CS46 Interface) 1024-Bit Serial EEPROM with Data Protect Sequential Read NM93CS46 devices 1024 bits CMOS non-volatile electrically erasable memory divided into 16-bit registers. Selected registers protected against data modification programming Protect Register with address first register p Abstract: .. Tel: 81-3-3818-8840 Fax:81-3-3818-8841 S z KT W Di ^ -g O cd ö y * JO Di O äi CO 3Ï cd m * 00 S <-H — w E - D 2 cd q M O o. cd O ro ■ ro co d Di -a JO o Fairchild does not assume any responsibility lor use of .. Tags: datasheet abstract.. |
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First line: 711DflSb DDmSSfl DEVELOPMENT DATA This data sheet contains advance information specifications subject change without notice. IPHIN BYR34 SERIES PHILIPS INTERNATIONAL ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES T-03-/7 Glass-passivated, high-efficiency double rectifier diodes plastic envelopes, featu Abstract: .. Copyrighted By Its Respective Manufacturer 5bE T> m 711Dfl2b 711Dfl2b DDMlEbl Sfl2 ■ PHIN T-03-1 T-03-1 BYR34 BYR34 .. 1 6826 8841&68 VF VF IR IR. I. IN. < < < < < < 1.25 1.65 1.0 25. trr Os. 80 220. ns nC. IF. IF. w ::iE w. IZ Q. ~ 9. M1247 M1247 . Gj o .. Tags: M3303 M3306* datasheet abstract.. |
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