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Part Manufacturer Description Datasheet BUY
TPS7A4525DCQT Texas Instruments Low-Noise Fast-Transient-Response 1.5-A Low-Dropout Voltage Regulator 6-SOT-223 visit Texas Instruments
REG102NA-2.5/250 Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 visit Texas Instruments Buy
REG102GA-2.85 Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 6-SOT-223 visit Texas Instruments Buy
REG102NA-3.3/3K Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 -40 to 85 visit Texas Instruments
REG102NA-5/250 Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 -40 to 85 visit Texas Instruments Buy
REG102GA-A/2K5G4 Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 6-SOT-223 visit Texas Instruments

low voltage Transistors

Catalog Datasheet MFG & Type PDF Document Tags

C7B12

Abstract: VREG-10 The Analog Mixed Signal Company Voltage Regulator Name Description ID: 042 VREG-10 This circuit was designed for a RFID chip in C7B12. The purpose of this circuit is to imitate the V-I-characteristic of a Zener-diode to protect the chip from overvoltages. In this circuit, stacked NMOS transistors are used to adjust the threshold where the circuit starts to draw current. Low voltage transistors , Limiter Voltage Symbol T VDD Unit °C V VDD V VDD V Min -40 7.64 7.07 6.5
ZMD
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Wafer

Abstract: Options Digital CMOS Low Voltage Transistors PolySilicon and Diffusion Resistors Vertical Bipolar , Feature Size Industrial Control 5.5V Maximum Supply Voltage Home Automation Twin Well , available: Cadence PDK DRC, LVS Verification Files Bsim3v3 and EKV Model Parameter Sets for Transistors
Atmel
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Wafer CH-1705 4024B-FOUN-09/04/600

N715 ST

Abstract: STF715 STN715 NPN low voltage transistors Features I Low voltage small devices for surface , Voltage regulation I 1 2 Generic switch SOT-89 SOT-223 Description Both STF715 and STN715 are NPN transistors manufactured using planar technology. They are housed in surface mounting , Value Unit VCBO Collector-base voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V 1.5 A 2 A
STMicroelectronics
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N715 ST

n715

Abstract: 8707 STF715 STN715 NPN low voltage transistors Features Low voltage small devices for surface mounting High ruggedness 4 4 3 2 Applications Relay driver 1 3 Voltage , NPN transistors manufactured using planar technology. They are housed in surface mounting power , Value Unit VCBO Collector-base voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5 V 1.5 A 2 A
STMicroelectronics
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n715 8707 n715 sot-223 8707 ic marking codes transistors sot-223
Abstract: D44H11FP D45H11FP Complementary power transistors Features . Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier Switching circuits 1 3 2 Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a , Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0 , types voltage and current values are negative. Table 3. Symbol RthJC RthJA Thermal data Parameter STMicroelectronics
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motorcycle regulator

Abstract: MOTORCYCLE IGNITION particular tolerance is required on resistors R3 and R4. T1 and T2 are low signal / low voltage transistors , shown in figure 2. As it is possible to see, only two low power NPN transistors, one diode, and two , low forward voltage drop is useful in case of cold crank ignition, because this would limit the , switching regulator, three smart Low Side Drivers (LSDs) and an internal logic capable both to detect LED , , because it allows to regulate output voltages that are greater than or less than the DC input voltage
STMicroelectronics
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AN1508 motorcycle regulator MOTORCYCLE IGNITION motorcycle LED signal turn lights circuit of voltage regulator for motorcycle MOTORCYCLE IGNITION 4 Transistor BC108

motorcycle regulator

Abstract: motorcycle LED signal turn lights / low voltage transistors. A BC108 npn transistor could be used for both. Table 1: TS-PWM Control Pin , low power NPN transistors, one diode, and two resistors have been added to the typical application , into R4 even if the brake signal is not activated. Moreover, a low forward voltage drop is useful in , PWM DC-DC converter switching regulator, three smart Low Side Drivers (LSDs) and an internal logic , , because it allows to regulate output voltages that are greater than or less than the DC input voltage
STMicroelectronics
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motorcycle battery 1N6263 AN1488 BC108 transistor MOTORCYCLE

TRANSISTOR SMD CODE PACKAGE SOT23

Abstract: TRANSISTOR BC337 SMD or 20 V types) can be selected if a high VCE0 of 40 to 50 V is not required. Low voltage transistors , for low voltage transistors If the current gain at a given high collector current already started , VCEsat (BISS) transistors are: · Low collector-emitter saturation voltage and collector-emitter , Application Note Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their , -02 Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications Philips Semiconductors
Philips Semiconductors
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AN10116-02 4350Z TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC 01/W97 2515YPN 4350T 4350D

LM11

Abstract: LM11 national Super-gain bipolar transistors with on-wafer trimming are used providing low offset voltage and drift The , methods Table I summarizes the results obtained The combination of low offset voltage and low bias , compensate for this to some extent But with FETs low offset voltage does not guarantee low drift as it , moderate temperatures this input current will seriously degrade the low offset voltage and drift even with , range but this design was seriously marred by high offset voltage drift excessive low frequency noise
National Semiconductor
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LM108 LM108A LM11 LM11 national lM1081 LM11 op amp transistor 8722 Widlar TP-15

transistor bc 731

Abstract: ULN pnp array family uses uncommitted low voltage transistors and resistors which are available to be metallized , ) Low Voltage 4 Collector PNP High Voltage 4 Collector PNP PNP Current Source Zeners (NPN Diodes) 2 A , f# DN1 Resistors Ref # RB1 RI1 Rl2 R13 Note 1: Description NPN Low Voltage NPN Rower (100 mA , the logic. In this way, when the V c c is under voltage, the array goes into a low current consumption , Current Output High Voltage Output Low Voltage Unity Gain Bandwidth Slew Rate Current Consumption IEA1-1 =
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transistor bc 731 ULN pnp array ULN* PNP transistor array TN4S TN-61 FB3480 UC1825

ml4809

Abstract: TN4S uncommitted low voltage transistors and resistors which are available to be metallized (described on page 3 , Low Voltage 4 Collector PNP 3 8 3 8 11 High Voltage 4 Collector PNP 2 2 2 2 4 PNP Current Source 3 3 , # Description à @ 100 fjA fi@ 1 mA '(/Ï/2) (Note 1) VCEO VCBO Ft (M Hz) Count TN1 NPN Low Voltage , VCc is under voltage, the array goes into a low current consumption mode» The thresholds for UV1 can , -1 = 4v -.5 -1.3 mA Output High Voltage Ieai-1 = -0.5mA 4.0 4.7 5.0 V Output Low Voltage 'eai-i =
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OCR Scan
ml4809 diode F4 3J ML4823 ML4825

2kW flyback PFC

Abstract: transistor SMD DK -RN S-FET low voltage transistors. With a finished chip thickness of 160µm, Cool MOSTM transistors have , RDS(on) of a High Voltage MOSFET is different from low voltage technologies. It is more than 95% dominated by the resistance of the epi layer - not by the cell design, as is the case for low voltage , 1.5 190m TO-218 70m SPP(35)N60S5 SPW(19)N60S5 -30V For Low Voltage applications , stumbling block to progress in this area. Until today, the evolution of High Voltage MOSFET technology had
Siemens
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BUP314 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W D-90439 D-70499 D-81679 B-1060 DK-2750 3800-P

RTAX2000S

Abstract: rtax4000 can be attributed to the fact the first stage inverter is made up of high voltage transistors (3.3 V) while the second stage inverter is made up of low voltage transistors (1.5 V). · Multiplying the , voltage across the transistors is only half of VCCA; that is, approximately 0.75 V. At this voltage HCI , observe the relationship between transient current and other variables, such as voltage level, die size , the core supply voltage from 1.8 V down to 0.8 V while powering down VCCDA were performed and the
Actel
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RTAX2000S rtax4000 RTAX2000 RTAX-S RTAX1000S 9AB TRANSISTOR AC344

marking R24

Abstract: MARKING 702 6pin ic ) The ,uPA801T has b uilt-in 2 low -voltage transistors w hich are designed to a m p lify low noise in the VHF band to the UHF band. FEATURES · · · · Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, V ce = 3 V , PRELIMINARY DATA SHEET SILICON TRA N SISTO R uPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN , A A M ini M old Package Adopted Built-in 2 Transistors (2 x 2SC4226) ORDERING INFORMATION , perature Ta ( *C) lc - V ce C haracteristics Base to E m itte r Voltage V be (V) hFE - lc C haracteristics
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marking R24 MARKING 702 6pin ic S2L 92 842 ic UA80 IC 8219 PA801T

ZETEX T 1049

Abstract: rele 12V 10A the low voltage variant Zetex transistors specifically developed for battery system operation, and , the low voltage variant Zetex transistors specifically developed for battery system operation, and , range. Bipolar devices, particularly low voltage variants as designed for battery powered , for low voltage applications. Application Note 21 Issue 2 January 1996 Base Region -55°C , .7 to x2 over the operating temperature range. Bipolar devices, particularly low voltage variants as
Zetex Semiconductors
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FMMT717 ZETEX T 1049 rele 12V 10A mosfet base inverter with chargers circuit ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 AN21-

BYT12-1000

Abstract: power IGBT MOSFET transistor GTO SCR di diode with a high voltage rating. Instead it could be possible to use several low voltage ultra-fast , ) APPLICATION NOTE Voltage drop: If IC < IC(sat) the voltage drop (with optimised drive) is very low. VCE = , voltage transistors (VCEO < 250V) is around 10, and for high voltage transistors is around 5, near IC , high - up to 5kV. Its voltage drop is around 0.8V at low current, rising to 1.2V at nominal current , correct. The MOSFET voltage drop, RDS(ON).I, can be very low at a low current density, though that would
STMicroelectronics
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BYT12-1000 power IGBT MOSFET transistor GTO SCR di GTO triac IR thyristor manual ST GTO thyristor driver IR thyristor manual

Phoenix Contact 29 61 202

Abstract: low voltage triacs H = High Voltage Level L = Low Voltage Level Z = High Impedance State X = High or Low Voltage Level , Voltage HIGH Level Output Current LOW Level Output Current Operating Free-Air Temperature Input Transition , 3.6 V VIL LOW Level Input Voltage (Note 2) 2.3 V VCC 2.7 V 2.7 V VCC 3.6 V VOH HIGH Level Output , ; IOH = -18 mA VCC = 3.0 V; IOH = -24 mA VOL LOW Level Output Voltage 2.3 V VCC 3.6 V; IOL = 100 mA , VOLV Characteristic Dynamic LOW Peak Voltage (Note 4) Dynamic LOW Valley Voltage (Note 4) Condition VCC
ON Semiconductor
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Phoenix Contact 29 61 202 low voltage triacs 277356 MC74LCX244 SOIC-20 LCX244 TSSOP-20 SOEIAJ-20 74LCX244

JFET siced

Abstract: SiC-JFET field of low voltage transistors used in DC/DC-converters especially for the huge current demand of , low conduction losses of bipolar transistors. The device comprises a DMOS like cell array situated , NPT-IGBT has a low doped n-region, designed to support the whole blocking voltage of the device in a , respectively and recombination processes within the voltage sustaining layer. The NPT concept shows very low , concept with its extemely low doping. In PT-IGBTs the charge is swept out at a relatively low voltage
Infineon Technologies
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JFET siced SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high

D1N5226

Abstract: D1N4750 available RDS[on] in low voltage transistors plummets is the movement away from generous heatsinking, and , side switches with a low side MOSFET switching transistors. This synergistic combination relies on , functions, while including two fast low cost MOSFET transistors in the same package to provide PWM control , the bridge (see Fig. 1) is high, the gate to drain voltage on that PROFET is low, and the internal , source. The drawback to this is that this usually results in a relatively low gate drive voltage, which
Infineon Technologies
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D1N5226 D1N4750 1N5226 pspice D1N5242 D1N5227 SCHEMATIC circuit scr H-Bridge PDSO-28 BTS770 BTS780
Abstract: while power is on may result in increased power consumption and possible damage to low voltage , current of the system in each power mode. Since supply current is typically dependent on supply voltage , simulation engine with an approximate supply current demand for every input voltage. The minimum system operating voltage input field allows the system operating time to stop increasing when the simulated battery voltage drops below a certain threshold. This is primarily to allow operating time estimates for Silicon Laboratories
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C8051F93 C8051F930 LQFP32 C8051F
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