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Part Manufacturer Description Datasheet BUY
LT1761IS5-2.0#TRMPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial visit Linear Technology - Now Part of Analog Devices
LT1761MPS5-3#TRMPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Military visit Linear Technology - Now Part of Analog Devices
LT1761IS5-2.0#TRPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial visit Linear Technology - Now Part of Analog Devices
LT1761IS5-2.0#PBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial visit Linear Technology - Now Part of Analog Devices
lt1761MPS5-1.8#PBF Linear Technology 100mA, Low Noise, LDO Micropower Regulators in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -55° to +125°C visit Linear Technology - Now Part of Analog Devices
LT1761IS5-3.3#TRM Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

low noise hemt transistor

Catalog Datasheet MFG & Type PDF Document Tags

varicap diodes

Abstract: BIPOLAR TRANSISTOR Bipolar Transistor GaAs N Channel Dual Gate FET GaAs N Channel Dual Gate FET Low Noise High Frequency , Silicon NPN Bipolar Transistor GaAs N Channel Dual Gate FET GaAs N Channel Dual Gate FET Low Noise High , Variable Capacitance Diode LNA/Mixers IC HA22001T LNA/Mixer Low Noise High Frequency Transistors for LNA 2SK2113 2SC4784 2SC4791 2SC4926 2SC5080 3SK228 3SK239A GaAs HEMT Silicon NPN Bipolar Transistor , Channel Dual Gate FET GaAs N Channel Dual Gate FET Low Noise High Frequency Transistors for Mixer
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HWCB613 varicap diodes BIPOLAR TRANSISTOR hitachi SAW Filter p channel mosfet dual gate mosfet in vhf amplifier gsm module with microcontroller PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A

low noise hemt

Abstract: low noise x band hemt transistor EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is , )1 69 33 03 09 12GHz Super Low Noise HEMT EC2623 Electrical Characteristics Tamb = +25°C , subject to change without notice 12GHz Super Low Noise HEMT EC2623 Typical Scattering Parameters , without notice 12GHz Super Low Noise HEMT EC2623 Typical Parameters Tamb = +25°C NF and Ga vs , Low Noise HEMT EC2623 Chip Mechanical Data Drain area= 45*45 µm Gate area = 45*45 µm
United Monolithic Semiconductors
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BMH204 TC2623 low noise hemt low noise x band hemt transistor low noise hemt transistor transistor HEMT GaS DSEC26237003 EC2623-99X/00 TC2623-A3X/00

low noise x band hemt transistor

Abstract: Low Noise HEMT TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is , Super Low Noise HEMT TC2623 Electrical Characteristics Tamb = +25°C Symbol Idss Test , 12GHz Super Low Noise HEMT TC2623 Typical Scattering Parameters Tamb = +25°C "S" Parameters Vds , Low Noise HEMT TC2623 Typical Parameters Tamb = +25°C NF and Ga vs Frequency 0.8 25 20 , Specifications subject to change without notice 12GHz Super Low Noise HEMT TC2623 BMH204 Package 0
United Monolithic Semiconductors
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DSTC26237003 transistor BP 109 Super low noise figure and high associated gain Hemt transistor LOW HEMT

transistor Zo 105

Abstract: 6943-3 P - HEMT Transistor Preliminary Datasheet Features · Low noise figure and high associated gain for , Semiconductor, Inc. pg. 1/6 04.12.2000 P - HEMT Transistor CFH800 , Semiconductor, Inc. pg. 2/6 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V , 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V; 20mA; Zo = 50 CFH800 , . 4/6 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V; 30mA; Zo = 50
TriQuint Semiconductor
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transistor Zo 105 6943-3 55086 05973 HEMT marking P

transistor zo 107

Abstract: 831 transistor P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high , Semiconductor, Inc. pg. 1/5 04.12.2000 P - HEMT Transistor CFH400 , Semiconductor, Inc. pg. 2/5 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V , TriQuint Semiconductor, Inc. pg. 3/5 04.12.2000 P - HEMT Transistor Typical Common Source S ­ , . pg. 4/5 04.12.2000 P - HEMT Transistor CFH400
TriQuint Semiconductor
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transistor zo 107 831 transistor transistor 131-6 Transistor 933 TRANSISTOR zo 109 ma Q62702-G0116

6943-3

Abstract: P - HEMT Transistor Preliminary Datasheet Features ? Low noise figure and high associated gain , , Inc. pg. 1/6 04.12.2000 P - HEMT Transistor CFH800 , Semiconductor, Inc. pg. 2/6 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V , 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V; 20mA; Zo = 50? f[GHz] S11 Mag , - HEMT Transistor Typical Common Source S ­ Parameters @ 3V; 30mA; Zo = 50? f[GHz] S11 Mag S11 Ang
TriQuint Semiconductor
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transistor zo 107

Abstract: 9412 transistor P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features · Low noise figure and high , 166 K/W pg. 1/5 04.12.2000 P - HEMT Transistor CFH400 , Semiconductor, Inc. pg. 2/5 04.12.2000 P - HEMT Transistor Typical Common Source S ­ Parameters @ 3V , 0.16 0.17 0.13 0.10 TriQuint Semiconductor, Inc. pg. 3/5 04.12.2000 P - HEMT Transistor , 04.12.2000 P - HEMT Transistor CFH400
TriQuint Semiconductor
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9412 transistor i 72741 9412 opt transistor zo 109 72741 51687

low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High , ) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 3.0 4.0 5.0 6.0
Mitsubishi
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MGF4951A MGF4952A InGaAs HEMT mitsubishi
Abstract: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers , noise figure Note: Gs and NFmin. are tested with sampling inspection. 1 V , VGS=-0.1V/STEP ID vs. VGS VGS=0V VDS=1.5V MGF4941CL Micro-X type , contact our sales offices. MGF4941CL Micro-X type plastic package S Mitsubishi
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AEC-Q101

fujitsu hemt

Abstract: FHX35LG . FUJITSU D a ta s h e e ts [2 4 L ightw ave C om ponents & M odules C atalog Low Noise HEMT FHX35X , ave C om ponents & M odules C atalog Low Noise HEMT FHX35X/002 F HX35LGI002 Fig. 3 , Capacitance Gold Bonding System Proven Reliability Low Noise H EM T APPLICATIONS The front end of an , devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate
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fujitsu hemt FHX35LG FHX35LG/002 35LG/002 35X/0

pseudomorphic HEMT

Abstract: CF003-03 GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise , -03 provides low noise figure and wide dynamic range up to 26 GHz. It is suitable for narrow and wide band , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003
Mimix Broadband
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pseudomorphic HEMT MIL-STD-750 CFB0303-B CFA0303-A CF003-03-000X
Abstract: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer , wide band low noise and high gain amplifiers up to 40 GHz. The CF001-03 is available in chip form and , accept their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor , Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Mimix Broadband, Inc., 10795 Rockley Rd Mimix Broadband
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CFS0103-SB CFB0103-B CFA0103-A CF001-03-000X

HEMT 36 ghz transistor

Abstract: low noise x band hemt transistor EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is , )1 69 33 03 09 40GHz Super Low Noise HEMT EC2827 Electrical Characteristics (single cell , notice 40GHz Super Low Noise HEMT EC2827 Absolute Maximum Ratings (1) Tamb = +25°C Symbol , without notice 40GHz Super Low Noise HEMT EC2827 "S" Parameters Vds = 2V,Ids = 9mA (maximum , Low Noise HEMT EC2827 Typical results Tamb = +25°C Typical noise parameters at Vds = 2V, Ids =
United Monolithic Semiconductors
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HEMT 36 ghz transistor BP 109 transistor 40Ghz transistor KA transistor 26 to 40 GHZ DSEC28277003 EC2827-99X/00
Abstract: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in C to K band , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless , DRAIN CURRENT ID (mA) 20 VGS (V) < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package , sales offices. < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package Keep safety first in Mitsubishi
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low noise hemt transistor

Abstract: MGF4714CP MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT , PACKAGED LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VGS ID vs. VDS 50 60 , MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT S PARAMETERS , The MGF4714CP is mounted in Super 12 tape. FEATURES 2 · Low noise figure NFmin.=1.00dB(MAX , APPLICATION 2.2±0.2 L to Ku band low noise amplifiers. (8°) (R0.1) (R0.1) QUALITY GRADE · GG
Mitsubishi
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GD-22
Abstract: FHC40LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.3dB (Typ.)@f=4GHz â'¢ High , 3 Drain-Source Voltage (V) 2 4 FHC40LG Super Low Noise HEMT TYPICAL NOISE FIGURE , 4 6 8 1012 18 20 Frequency (GHz) 3 FHC40LG Super Low Noise HEMT S11 S22 +j50 , -179.7 173.6 166.4 158.8 0° FHC40LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic , , TVRO, VSAT or other low noise applications. Eudyna stringent Quality Assurance Program assures the Eudyna Devices
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FH40LG 2-12GH 18GHZ

GM 2310 A

Abstract: low noise hemt transistor MITSUBISHI SEMICONDUCTOR (GaAs FET) MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku , SEMICONDUCTOR (GaAs FET) MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta , FET) MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT S PARAMETERS (Ta=25'C,VDS=2V,lD , for microstrip circuits. The MGF4714CP is mounted in Super 12 tape. FEATURES â'¢ Low noise figure
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GM 2310 A L to Ku GAAS HEMT transistor GC L to Ku band amplifiers 40103

FHX35LG

Abstract: FHX35LP DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10
Eudyna Devices
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FHX35LP WG 924 FHX35 2-18GH

fujitsu hemt

Abstract: FHR02FH FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Edition 1.1 July 1999 1 FHR02FH Super Low Noise HEMT POWER DERATING CURVE Total Power , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , 6 8 1012 18 20 Frequency (GHz) FHR02FH Super Low Noise HEMT S11 S22 +j50 S21 S12 , S-Parameters, click here 5 FHR02FH Super Low Noise HEMT Case Style "FH" Metal-Ceramic Hermetic
Fujitsu
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4-22GH FCSI0598M200

low noise hemt

Abstract: transistor hemt FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Low Noise HEMT POWER DERATING CURVE 300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE
Eudyna Devices
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transistor hemt rf transistor 3742
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