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LTC1594LIS#TR Linear Technology LTC1594L - 4- and 8-Channel, 3V Micropower Sampling 12-Bit Serial I/O A/D Converters; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1594LIS#TRPBF Linear Technology LTC1594L - 4- and 8-Channel, 3V Micropower Sampling 12-Bit Serial I/O A/D Converters; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1454LIS#TR Linear Technology LTC1454 - Dual 12-Bit Rail-to-Rail Micropower DACs; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1454LIS#TRPBF Linear Technology LTC1454 - Dual 12-Bit Rail-to-Rail Micropower DACs; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1380IGN Linear Technology LTC1380 - Single-Ended 8-Channel/ Differential 4-Channel Analog Multiplexer with SMBus Interface; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1380CGN#PBF Linear Technology LTC1380 - Single-Ended 8-Channel/ Differential 4-Channel Analog Multiplexer with SMBus Interface; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

list of n channel fet

Catalog Datasheet MFG & Type PDF Document Tags

PXI-2501

Abstract: PXI-2503 24-channel 2-wire Relay and FET Switch Multiplexers PXI-2501 and PXI-2503 ­ Preliminary Support , The PXI-2501 and the PXI-2503 are high-density switch modules that consist of a 24-channel 2 , module. In addition, full operation of the module is done through the supplied driver. A complete list , applications that require high-speed scanning of low voltage signals (±10V) because it uses FET switches that , , four 6-channel 6x4 12-channel N/A N/A PXI-2501 and PXI-2503 Configurations 341445A-01
National Instruments
Original
SH68-68-S pxi digital multimeter CH11 CH23

diode code GW 17 Schottky SMD

Abstract: interface, along with readback of FET and output rail status. In addition, current sense and pass and block , screen. Set the scope to trigger on the rising edge of Channel 1, at a threshold of about 1.5 V. Set the , ramp time of the Channel 1 waveform, from 0 volts to about 3.2 volts should be 2.6 ± 0.6 mS. The peak amplitude of the current pulse on Channel 4 (IPEAK) should be 195 ± 25 mA. A DVM can be used to verify the , waveform was obtained similar to that shown in Figure 8. The total ramp time of the Channel 2 trace, from
Texas Instruments
Original
diode code GW 17 Schottky SMD SLUU318 TPS2359 TPS2359EVM

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet applications. The following list of FET applications indicates the versatility of the FET family , Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , transistor (FET) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which
Temic Semiconductors
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AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs n channel depletion MOSFET

P-Channel Depletion Mosfets

Abstract: shockley diode , terminology, parameters, and typical applications. The following list of FET applications indicates the , FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An , complete depletion of the channel under these conditions. Depletion Layer P G 3b) N-Channel FET , form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two
Siliconix
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P-Channel Depletion Mosfets shockley diode shockley diode application shockley diode datasheet list of n channel fet jfet idss 10 ma vp -3

p channel depletion mosfet

Abstract: list of n channel fet of the FET, and touches briefly on its basic characteristics, terminology, parameters, and typical applications. The following list of FET applications indicates the versatility of the FET family , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , (FET) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET , High-Frequency Current Limiters Voltage-Controlled Resistors Mixers Oscillators The family tree of FET
Temic Semiconductors
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Depletion MOSFET 6D list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet Junction FETs JFETs list of fet

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets , terminology, parameters, and typical applications. The following list of FET applications indicates the , on the channel of a FET to achieve gate control of the channel current. On a MOSFET, the metallic , Cross-Section N­ Source Gate The lateral DMOS FET differs radically in its channel construction when , + N+ Drain Figure 9. Vertical N-Channel Enhancement-Mode DMOS FET The novelty of the , AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two
Temic Semiconductors
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P-Channel Depletion mosFET Siliconix JFET application note shockley depletion n channel mosfet diode shockley N-Channel depletion mos

E1351-66201

Abstract: list of n channel fet PDFINFO H5 5 8 6 - 0 1 16-Channel FET Multiplexer HP E1351A Technical Specifications q , scan list Voltage, current, and resistance measurements Space for signal conditioning components Description The HP E1351A FET multiplexer is a B-size, 1-slot, register-based VXI module that switches 16 channels each of high, low, and guard. The FET multiplexer module consists of a B-size component card , Information Description 16-Channel FET Multiplexer Service Manual 3 Yr. Retn. to HP to 1 Yr. OnSite Warr
Hewlett-Packard
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E1351-66201 E1411-80001 W01 fet P channel Junction FET E1326A 16 DIGITAL MULTIPLEXER E1352A E1353A E1357A E1358A E1326B

E1351-66201

Abstract: HP DC POWER CONNECTOR PDFINFO H5 5 2 0 - 0 1 32-Channel Single-Ended FET Multiplexer HP E1352A Technical , downloaded scan list Voltage, current, and resistance measurements Space for signal conditioning components Description The HP E1352A FET multiplexer is a B-size, 1-slot, register-based VXI module that switches 32 channels of high only and one low common input. The FET multiplexer module consists of a , E1411B DMM. Use of this bus requires the SCPI command TRIGger:SOURce DBUS. To connect an external DMM
Hewlett-Packard
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E1352-80001 HP DC POWER CONNECTOR E1301A hp circuit diagram E1411 E1403C 95/NT E1351A/52A 5965-5520E
Abstract: Glitch Maker FET RSET PS 1 Channel 1 TPS2410 UV FILTER STATUS OV + 5 V PS Load Output FET RSET PS 2 Channel 2 TPS2410 UV FILTER OV VAC Protect STATUS Figure 2 , channel 1, and Q12 and Q11 on channel 2. In single or parallel configurations, the body diode of the , turn off of the channel powering the load is de-sensitized. J8 Jumper J8 is the gate voltage for the , Install to use RSET, CH2 J16 Connects the load to CH2 C or FET J17 In to disable OV Channel 2 Texas Instruments
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TPS2410EVM SLVU181A HPA204 TPS2411 TPS2410/11

high power fet audio amplifier schematic

Abstract: SSM2302CPZ-R2 . Supply Current, One Channel Figure 11. Efficiency vs. Output Power into 8 Rev. 0 | Page 7 of 20 , audio amplifier capable of delivering 1.4 W/channel into 8 load. In addition to the minimal parts , evaluation board. It includes a brief description of the board as well as a list of the board specifications , configurations The SSM2302 has a micropower shutdown mode with a typical shutdown current of 20 nA. Shutdown is enabled by applying a logic low to the SD pin. The architecture of the device allows it to
Analog Devices
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SSM2302CPZ-R2 high power fet audio amplifier schematic schematic diagram of speaker crossover 2 speakers 1 crossover amplifier pcb SSM2302CSPZ MO-220-VEED-2 CP-16-3 SSM2302CPZ-REEL1
Abstract: Agilent E1351A 16-Channel FET Multiplexer Data Sheet â'¢ 1-Slot, B-size, register based â , terminal card and the analog bus connector. Description The Agilent E1351A FET Multiplexer is a B-size, 1-slot, register-based VXI module that switches 16 channels each of high, low, and guard. The FET , , 0.9, 0.75, 0.5 mm) 13,000 channels/s typ. 16-Channel FET Multiplexer Service Manual Terminal , scan list â'¢ Voltage, current, and resistance measurements â'¢ Space for signal conditioning Agilent Technologies
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5965-5586E
Abstract: Agilent E1352A 32-Channel Single-Ended FET Multiplexer Data Sheet â'¢ 1-Slot, B-size , guard input. The FET multiplexer module consists of a B-size component card (labeled E1351-66201 on , Description Product No. 32-Channel Single-ended FET Multiplexer Service Manual Terminal Card,16 , from downloaded scan list â'¢ Voltage, current, and resistance measurements â'¢ Space for signal , / second with either the E1326B DMM or E1411B DMM. Use of this bus requires the SCPI command TRIGger Agilent Technologies
Original

SSM2302CPZ-R2

Abstract: + Noise THD + N Input Common-Mode Voltage Range Common-Mode Rejection Ratio Channel , brief description of the board as well as a list of the board specifications. Table 5. SSM2302 , shutdown current of 20 nA. Shutdown is enabled by applying a logic low to the SD pin. The architecture of the device allows it to achieve a very low level of pop and click. This minimizes voltage glitches at , . APPLICATIONS The fully differential input of the SSM2302 provides excellent rejection of common-mode noise
Analog Devices
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SSM2302CPZ-REEL71 D06051-0-6/06

2n4391, Voltage controlled

Abstract: sw 2n4093 G eneral Purpose 2N 4856 thru 2N4861 FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS , igh Speed Switching Is the resistance that appears at the output of the FET at a specific Drain to , FF) Is the current that flows at the output of the FET when the specified pinch-off voltage (Vr) is , echanical switch. 3 . loss Is the amount of current that flows at the output of the FET when a speciiied voltage is applied at the Drain of the FET. (Vos = O junction FET) (V «(TH ) M OS FET). This param eter is
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OCR Scan
2N5906 2n4391, Voltage controlled sw 2n4093 SDF1001 2N4391 2N4393 2N3824 4417-2N4416 5396-2N5397

J132 MOSFET

Abstract: MOSFET J132 program the turn off point of the TPS2411. Glitch Maker PS1 Channel 1 TPS2412 Output FET +5V PS Load PS2 Channel 2 TPS2412 Output FET Figure 2. EVM Block Diagram 3 Materials , supply voltage slightly and note the gate on that channel pass FET turn off and the other channel FET , voltmeter, verify VDS for the on channel to be tens of millivolts. 5.7 Glitch Maker Set power , TPS2412/13 Evaluation Module, HPA227 9 www.ti.com List of Materials 7 List of Materials
Texas Instruments
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TPS2413 J132 MOSFET MOSFET J132 SCHEMATIC POWER AUDIO MOSFET list of n channel power mosfet J132 FET Switching Power Supply Schematic Diagram using mosfet

2a 5060

Abstract: 6 PIN SMD 3236 CMM0530 Preliminary Product Information May 1998 (1 of 5) Features â¡ Multi-Mode Operation , communications. CMM0530 is a member of 824 to 928 MHz 3.0V, 30.5 dBm Multi-Mode Power Amplifier Functional Block Diagram Vg2* Vgl 2 â¡= RFIN 3 a= N/C 4 â¡= J=_ â¡ 8 N/C O 7 RFOUT/Vd2 ~~1~1 6 RF OUT , low thermal impedance and low RF loss. The device requires minimum amount of external biasing and RF , A Thermal Resistance 25°C/W Channel Temperature 150°C RF Input Power +15 dBm* Storage Temperature
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OCR Scan
CMM0530-CT 2a 5060 6 PIN SMD 3236 117450 SSRN IS-136 J-STD-18/AMPS IS-136/AMPS 11745G3 00QQ575 PB-CMM0530-CT

b48 DIODE schottky

Abstract: mosfet base inverter with chargers circuit a range of preset output voltages from 2.5 V to 4.5 V, it incorporates an internal P-channel FET , D24 N A44, B48, N40 A44 First device in the LPC900 family integrates 8 KB of Flash program , over 100 sales offices in more than 50 countries. For a complete up-to-date list of our sales offices , executing instructions in two to four clocks, six times the rate of standard 80C51 devices. Many system , P89LPC932 integrates a variety of on-chip memory along with a host of communications ports and system
Philips Semiconductors
Original
b48 DIODE schottky mosfet base inverter with chargers circuit SCC2691AC1 74HC1G14 30689 all n type mosfet switch ic for notebook cpu core dc to dc conversion BZA418A BUK9107-55ATE MAX8878 P89C51R SA57011 SA57017
Abstract: timing and other control parameters are accessed via the I2C interface, along with readback of FET and , Channel 1 trace a couple divisions down from the top of the scope screen, and position the Channel 2 , trace towards the bottom of the scope screen. Set the scope to trigger on the rising edge of Channel 1 , shown in Figure 5. The total ramp time of the Channel 1 waveform, from 0 V to about 3.2 V should be 2.6 0.6 ms. The peak amplitude of the current pulse on Channel 4 should be 195 25 mA. A DVM can be used Texas Instruments
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TPS2459EVM SLUU349 TPS2459

nmos pmos array

Abstract: list of n channel fet area contains 400 CMOS transistor pairs. A transistor pair consists of one p channel and one n channel , can be configured to do many functions. Here's a list of some of them: â'¢ A to D and D to A , section, however they are laid out such that p and n channel devices can be used separately. This allows , and have a tolerance of about 30%. 7. High resistance FET section. These devices are used to make , gate construction using a double-poly p-well process. The minimum gate channel length is 4 microns
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OCR Scan
nmos pmos array A300 n channel fet array Acumos mf10

FET U310

Abstract: FET 2N4416 currents of up to 1 amp. The following parameters are the most important considerations in selecting a FET , FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS TYPES. 2N3824 2N4417-2N4416 U310 , thru 2N4093 MOS Switch High Speed Switching Is the resistance that appears at the output of the FET , switch. 2. L> (O FF) Is the current that flows at the output of the FET when the specified pinch-off , in a m echanical switch. 3 . loss Is the amount of current that flows at the output of the FET
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OCR Scan
2N5396-2N5397 2N2606 2N5397-2N5396 FET U310 FET 2N4416 2n4117 jan 2N4856 2N2609 2N5114 2N5116
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